Datasheet AO4914 Datasheet (Alpha & Omega) [ru]

30V Dual N-Channel MOSFET with Schottky Diode

SCHOTTKY

S

1

Symbol

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

Pin1

General Description Product Summary

AO4914

The AO4914 uses advanced trench technology to provide
excellent R

and low gate charge. The two MOSFETs

DS(ON)

make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the
synchronous MOSFET to boost efficiency further.

SOIC-8

SOIC-8

Top View Bottom View

Top View Bottom View

S1/A

S1/A

G1

G1
S2

S2
G2

G2

Q1(N-Channel) Q2(N-Channel)

VDS= 30V 30V
ID= 8A (VGS=10V) 8A (VGS=10V)
R
R

<20.5mΩ R

DS(ON)

<28mΩ R

DS(ON)

DS(ON)
DS(ON)

ESD Protected ESD Protected

100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

VDS = 30V, IF = 3A, VF<0.5V@1A

D1

Top View

Top View

D1/K

D1/K
D1/K

D1/K

D2

D2

D2

D2

G1

G1

D1

S1

K

K

A

A

<20.5mΩ (VGS=10V)
<28mΩ (VGS=4.5V)

D2

D2

G2

G2

S2

A

Max Q1

Drain-Source Voltage 30
Gate-Source Voltage

Continuous Drain
Current

Pulsed Drain Current
Avalanche Current

TA=25°C
TA=70°C

C

C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

Parameter Units

Reverse Voltage V
Continuous Forward

Current
Pulsed Diode Forward Current

TA=25°C
TA=70°C

C

TA=25°C

B

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

IAS, I
EAS, E

P

D

TJ, T

V

DS

I

F

I

FM

P

D

TJ, T

AR

STG

STG

8

6.5
40
19

AR

18

2

1.3

-55 to 150

Max Schottky

1.28Power Dissipation

30

2.2
20

Max Q2

30

±20

UnitsParameter

V
V±20

8

6.5

A
40
19
18

2

1.3

A

mJAvalanche energy L=0.1mH

W
°C

3

A

2

W

www.aosmd.com Page 1 of 9

AO4914

Thermal Characteristics - MOSFET
Parameter Typ Max Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

A
A D

t ≤ 10s
Steady-State
Steady-State

Thermal Characteristics - Schottky
Parameter Typ Max Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R

θJA

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

A
A D

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

t ≤ 10s
Steady-State
Steady-State

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

Symbol

R

θJA

R

θJL

48
74 90

32

62.5 °C/W

40

Symbol

R

θJA

R

θJL

=150°C. Ratings are based on low frequency and duty cycles to keep

and lead to ambient.

θJL

48 62.5 °C/W
74 90

32 40

°C/W
°C/W

°C/W
°C/W

Rev 11: Mar. 2011 www.aosmd.com Page 2 of 9

t5ns

Turn-On DelayTime

t

D(on)

5

ns

Turn-On DelayTime

AO4914

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current (Set
by Schottky leakage)

Gate-Body leakage current
Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current

ID=250uA, VGS=0V

30 V
VR=30V 0.05
VR=30V, TJ=125°C 10
VR=30V, TJ=150°C 20
VDS=0V,VGS=±16V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A

1.2 1.8 2.4 V
40 A

17 20.5

10 µA

TJ=125°C 23.5 29
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V

20.5 28 mΩ
30 S

0.45 0.5 V

3 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

575 730 865 pF
115 165 215 pF

50 82 120 pF

0.5 1.1 1.7 Ω

SWITCHING PARAMETERS

Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Q

gs

Q

gd

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=10V, VDS=15V, ID=8A

2.5 nC
3 nC

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

VGS=10V, VDS=15V, RL=1.8Ω,
R

=3Ω

GEN

IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

3.5 ns

19 ns

3.5 ns
8

ns

8 nC

Rev 11: Mar. 2011 www.aosmd.com Page 3 of 9

Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Voltage (Note E)

10V

18

25°C

10V

AO4914

30

30

4V

4V

5V

25

25

20

20

15

15

(A)

(A)

D

D

I

I

10

10

5

5

0

0

0 1 2 3 4 5

0 1 2 3 4 5

30

30

25

25

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

(m

(m

20

20

DS(ON)

DS(ON)

R

R

15

15

10

10

0 5 10 15 20

0 5 10 15 20

5V

VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

VDS(Volts)

VGS=4.5V

VGS=4.5V

VGS=10V

VGS=10V

ID(A)

ID(A)

Voltage (Note E)

3.5V

3.5V

3V

3V

VGS=2.5V

VGS=2.5V

30

30

VDS=5V

VDS=5V

25

25

20

20

15

15

(A)

(A)

D

D

I

I

10

10

5

5

0

0

1 1.5 2 2.5 3 3.5 4

1 1.5 2 2.5 3 3.5 4

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

125°C

125°C

25°C

25°C

VGS(Volts)

VGS(Volts)

VGS=10V

VGS=10V
ID=8A

ID=8A

VGS=4.5V

VGS=4.5V
ID=4A

ID=4A

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

(Note E)

17

5
2

10

0

50

40

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

R

25°C

20

10

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

VGS(Volts)

(Note E)

ID=8A

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

125°C

40

FET+Schottky

0.0 0.2 0.4 0.6 0.8 1.0

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

Rev 11: Mar. 2011 www.aosmd.com Page 4 of 9

Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

Figure 10: Single Pulse Power Rating Junction

-

10s

DC

100µs

C

10s

DC

100µs

T

P

10

10

VDS=15V

VDS=15V
ID=8A

ID=8A

8

8

6

6

(Volts)

(Volts)

GS

GS

4

4

V

V

2

2

0

0

0 3 6 9 12 15

0 3 6 9 12 15

Figure 7: Gate-Charge Characteristics

Figure 7: Gate-Charge Characteristics

100.0

100.0

R

10.0

10.0

R

DS(ON)

DS(ON)

limited

limited

Qg(nC)

Qg(nC)

10µs

10µs

1500

1500

1200

1200

C

C

iss

iss

900

900

600

600

C

C

oss

Capacitance (pF)

Capacitance (pF)

300

300

0

0

0 5 10 15 20 25 30

0 5 10 15 20 25 30

1000

1000

100

100

oss

VDS(Volts)

Figure 8: Capacitance Characteristics

Figure 8: Capacitance Characteristics

VDS(Volts)

TA=25°C

TA=25°C

AO4914

1.0

1.0

(Amps)

(Amps)

D

D

I

I

0.1

0.1

0.0

0.0

T

=150°C

T

=150°C

J(Max)

J(Max)

TA=25°C

TA=25°C

0.01 0.1 1 10 100

0.01 0.1 1 10 100

VDS(Volts)

VDS(Volts)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

1

R

=90°C/W

θJA

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

1ms

1ms

10ms

10ms

Pulse Width (s)

Power (W)

Power (W)

10

10

1

1

0.00001 0.001 0.1 10 1000

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note F)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T

Rev 11: Mar. 2011 www.aosmd.com Page 5 of 9

V

T

T

t

3.5

ns

V

V

I

I

V

V

V

Turn-On Rise Time

V

=10V, V

=15V, R

=1.8Ω,

tr3.5

ns

Turn-On Rise Time

VGS=10V, V

DS

=15V, R

L

=1.8Ω,

AO4914

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

=250µA, VGS=0V

D

=30V, VGS=0V 1

DS

=55°C 5

J

30 V

VDS=0V, VGS=±16V

DS=VGS ID

=10V, VDS=5V

GS

=10V, ID=8A

GS

=4.5V, ID=4A

GS

=5V, ID=8A

DS

=1A,VGS=0V

S

=250µA

=125°C 23.5 29

J

1.2 1.8 2.4 V
40 A

17 20.5

20.5 28 mΩ
30 S

0.75 1 V

µA

10 µA

mΩ

2.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

600 740 888 pF

77 110 145 pF
50 82 115 pF

0.5 1.1 1.7 Ω

SWITCHING PARAMETERS

Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Q

gs

Q

gd

t

D(on)

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime

VGS=10V, VDS=15V, ID=8A

2.5 nC
3 nC
5 ns

R

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

J(MAX)

=3Ω

GEN

IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

6

14

19 ns

3.5 ns
8 10 ns

18 22

nC

Rev 11: Mar. 2011 www.aosmd.com Page 6 of 9

Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Voltage (Note E)

18

25°C

30

30

10V

10V

25

25

20

20

(A)

(A)

15

15

D

D

I

I

10

10

5

5

0

0

0 1 2 3 4 5

0 1 2 3 4 5

30

30

25

25

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

(m

(m

20

20

DS(ON)

DS(ON)

R

R

15

15

10

10

0 5 10 15 20

0 5 10 15 20

4V

4V

5V

5V

VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

VDS(Volts)

VGS=4.5V

VGS=4.5V

VGS=10V

VGS=10V

ID(A)

ID(A)

Voltage (Note E)

3.5V

3.5V

3V

3V

VGS=2.5V

VGS=2.5V

30

30

VDS=5V

VDS=5V

25

25

20

20

(A)

(A)

15

15

D

D

I

I

10

10

5

5

0

0

1 1.5 2 2.5 3 3.5 4

1 1.5 2 2.5 3 3.5 4

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

125°C

125°C

VGS(Volts)

VGS(Volts)

VGS=10V

VGS=10V
ID=8A

ID=8A

Temperature (°C)

Temperature (°C)

VGS=4.5V

VGS=4.5V
ID=4A

ID=4A

(Note E)

25°C

25°C

AO4914

17

5
2

10

0

40

35

30

Ω

Ω)

Ω

Ω

(m

25

DS(ON)

20

R

15

10

25°C

2 4 6 8 10

VGS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

125°C

ID=8A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

-I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

-VSD(Volts)

Rev 11: Mar. 2011 www.aosmd.com Page 7 of 9

Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

10µs

10s

C

10µs

10s

T

P

10

10

VDS=15V

VDS=15V
ID=8A

ID=8A

8

8

6

6

(Volts)

(Volts)

GS

GS

4

4

V

V

2

2

0

0

0 3 6 9 12 15

0 3 6 9 12 15

Figure 7: Gate-Charge Characteristics

Figure 7: Gate-Charge Characteristics

100.0

100.0

R

R

DS(ON)

10.0

10.0

DS(ON)

Qg(nC)

Qg(nC)

100µs

100µs

1200

1200

1000

1000

C

C

iss

oss

oss

iss

VDS(Volts)

VDS(Volts)

TA=25°C

TA=25°C

800

800

600

600

400

400

Capacitance (pF)

Capacitance (pF)

200

200

0

0

0 5 10 15 20 25 30

0 5 10 15 20 25 30

1000

1000

100

100

C

C

Figure 8: Capacitance Characteristics

Figure 8: Capacitance Characteristics

AO4914

1.0

1.0

(Amps)

(Amps)

D

D

-I

-I

0.1

0.1

0.0

0.0

T

=150°C

T

=150°C

J(Max)

J(Max)

TA=25°C

TA=25°C

0.01 0.1 1 10 100

0.01 0.1 1 10 100

-VDS(Volts)

-VDS(Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

1

R

=90°C/W

θJA

0.1

Normalized Transient

0.01

Thermal Resistance

θ

θJA

θ

θ

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

1ms

1ms

10ms

10ms

Pulse Width (s)

Power (W)

Power (W)

10

10

1

1

0.00001 0.001 0.1 10 1000

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note F)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T

Rev 11: Mar. 2011 www.aosmd.com Page 8 of 9

VDC

VDC

Rg

Rg

AO4914

Gate Charge Test Circuit & Waveform

Gate Charge Test Circuit & Waveform

Vgs

Vgs

Qg

Qg

10V

Vds

Vds

10V

Qgs Qgd

Qgs Qgd

Charge

Charge

90%

90%

10%

10%

+

+

+

+

Vds

Vds

VDC

-

-

Vgs

Vgs

Ig

Ig

Vds

Vds

Vgs

Vgs

VDC

-

-

DUT

DUT

Resistive Switching Test Circuit & Waveforms

Resistive Switching Test Circuit & Waveforms

RL

RL

+

VDC

VDC

+

Vdd

Vdd

-

-

DUT

DUT

Vgs

Vds +

Vds -

Ig

Vgs

Vgs

Rg

Vgs

Isd

Vgs

Vds

Vds

Id

Id

DUT

Vgs

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

L

Vgs

VDC

+

Vdd

-

Id

Vds

Vds

t t

t t

r

r

d(on)

d(on)

t

t

on

on

E = 1/2 LI

E = 1/2 LI

AR

AR

t

t

t

t

d(off)

d(off)

t

t

off

off

2

2
AR

AR

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

Isd

Vds

I

F

dI/dt

rr

I

RM

f

f

BV

BV

DSS

DSS

I

AR

Vdd

Rev 11: Mar. 2011 www.aosmd.com Page 9 of 9