Datasheet AO4900A Datasheet (Alpha & Omega Semiconductor)

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AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode

General Description

The AO4900A uses advanced trench technology to
provide excellent R

two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC­DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost

efficiency further. Standard Product AO4900A is Pb-

free (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.

and low gate charge. The

DS(ON)

Features

VDS (V) = 30V
ID = 6.9A (VGS = 10V)
R
R
R

SCHOTTKY

VDS (V) = 30V, IF = 3A, VF=0.5V@1A

< 27mΩ (VGS = 10V)

DS(ON)

< 32mΩ (VGS = 4.5V)

DS(ON)

< 50mΩ (VGS = 2.5V)

DS(ON)

AO4900A and AO4900AL are electrically identical.

S2/A

G2
S1
G1

8

1

7

2

6

3

5

4

SOIC-8

D2/K
D2/K
D1
D1

G2

D2

S2

K

A

G1

D1

S1

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter

Drain-Source Voltage

Gate-Source Voltage

TA=25°C

Continuous Drain Current

Pulsed Drain Current

A

B

TA=70°C

Schottky reverse voltage 30

TA=25°C

Continuous Forward Current

Pulsed Forward Current

A

B

T

A

=70°C

TA=25°C

TA=70°C

Junction and Storage Temperature Range

Symbol Unit

V

DS

V

GS

I

D

I

DM

V

KA

I

F

I

FM

P

D

TJ, T

STG

MOSFET

30

±12

6.9

5.8

40

2

-55 to 150

Schottky

3

2

40

2

1.441.44Power Dissipation

-55 to 150

V

V

A

V

A

W

°C

Parameter: Thermal Characteristics MOSFET

Maximum Junction-to-Ambient

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s

Steady-State

Steady-State

Symbol Unit

R

θJA

Typ

55

90

R

θJL

40

Max

62.5

110

48

°C/W

Thermal Characteristics Schottky

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s

Steady-State

Steady-State

R

θJA

47.5

71

R

θJL

32

62.5Maximum Junction-to-Ambient

110

40

°C/W

Alpha & Omega Semiconductor, Ltd.

AO4900A

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

V

=24V, VGS=0V

DS

V

=0V, VGS= ±12V

DS

DS=VGS ID

V

GS

V

GS

V

GS

V

GS

V

DS

=1A,VGS=0V

I

S

=250µA

=4.5V, VDS=5V

=10V, ID=6.9A

=4.5V, ID=6A

=2.5V, ID=5A

=5V, ID=5A

T

J

=125°C

T

J

=55°C

30 V

0.002 1
µA

5

100 nA

0.7 1 1.5 V

40 A

20 27

25 40

23 32

34 50

mΩ

mΩ

mΩ

10 26 S

0.71 1 V

4.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

VGS=0V, VDS=15V, f=1MHz

=0V, VDS=0V, f=1MHz

GS

900 1100 pF

88 pF

65 pF

0.95 1.5 Ω

SWITCHING PARAMETERS

Q

Q

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

gs

gd

rr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V

=4.5V, VDS=15V, ID=8.5A

GS

=10V, VDS=15V, RL=1.8Ω,

V

GS

=6Ω

R

GEN

=5A, dI/dt=100A/µs

I

F

I

=5A, dI/dt=100A/µs

F

10 12 nC

1.8 nC

3.75 nC

3.2 ns

3.5 ns

21.5 ns

2.7 ns

16.8 20

ns

812nC

SCHOTTKY PARAMETERS

V

F

I

rm

C

T

Forward Voltage Drop I

Maximum reverse leakage current

Junction Capacitance V

=1.0A

F

V

=30V

R

=30V, TJ=125°C

V

R

=30V, TJ=150°C

V

R

=15V

R

0.45 0.5 V

0.007 0.05

3.2 10

12 20
37 pF

mA

A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 0 : Feb 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.

AO4900A

V

GS

V

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

10V

50

4.5V

40

30

(A)

D

I

2.5V

3V

20

10

VGS=2V

0

012345

(Volts)

V

DS

Fig 1: On-Region Characteristics

60

50

)

Ω

40

VGS=2.5V

(m

30

DS(ON)

R

=4.5

20

VGS=10V

10

0 5 10 15 20

(A)

I

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

20

16

VDS=5V

12

(A)

D

I

8

125°C

25°C

4

0

0 0.5 1 1.5 2 2.5 3

(Volts)

V

GS

Figure 2: Transfer Characteristics

1.7
VGS=4.5V

1.5

1.3

VGS=2.5V

1.1

0.9

0.7

Normalized On-Resistance

VGS=4.5

VGS=10V

VGS=2.5V

0.5

-50 -25 0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

VGS=10V

100

90

80

70

)

Ω

60

(m

50

DS(ON)

R

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

40

25°C

30

20

10

125°C

ID=6.9A

0246810

(Volts)

V

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

(A)

S

I

1.0E-03

1.0E-04

125°C

25°C

1.0E-05

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0 1.2

(Volts)

V

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4900A

ss

s10sDC

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5

4

VDS=15V
I

=6.9A

D

3

(Volts)

GS

2

V

1

0

024681012

(nC)

Q

g

Figure 7: Gate-Charge Characteristics

100.0
T

=150°C

J(Max)

T

=25°C

A

10.0

R

DS(ON)

limited

10µs

(Amps)

D

I

1.0

10ms

0.1

1

0.1 1 10 100

V

(Volts)

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

1400

1200

C

1000

iss

800

600

400

Capacitance (pF)

200

C

r

C

oss

0

0 5 10 15 20 25 30

V

(Volts)

DS

Figure 8: Capacitance Characteristics

50

40

T
T

J(Max)

=25°C

A

=150°C

30

20

Power (W)

10

0

0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0.1

Normalized Transient

Thermal Resistance

JA

θ

Z

Single Pulse

P

D

T

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4900A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY

10

125°C

1

0.1

(Amps)

F

I

0.01

25°C

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

(Volts)

F

Figure 12: Schottky Forward Characteristics

0.7

0.6
I

=3A

F

0.5

0.4

(Volts)

F

V

0.3

I

=1A

F

0.2

250

f = 1MHz

200

150

100

Capacitance (pF)

50

0

0 5 10 15 20 25 30

(Volts)

V

KA

Figure 13: Schottky Capacitance Characteristics

100

10

1

VR=30V

0.1

Leakage Current (mA)

0.01

0.1

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 14: Schottky Forward Drop vs.

Junction Temperature

0.001
0 25 50 75 100 125 150 175

Temperature (°C)

Figure 15: Schottky Leakage current vs. Junction

Temperature

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

1

0.1

Normalized Transient

Thermal Resistance

JA

θ

Z

θJA

Single Pulse

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P

D

T

on

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Schottky Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.