Datasheet AO4884 Specification

40V Dual N-Channel MOSFET

V

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

A D

A

Pin1

General Description Product Summary

AO4884

The AO4884 uses advanced trench technology to provide
excellent R

with low gate charge. This is an all

DS(ON)

purpose device that is suitable for use in a wide range of
power conversion applications.

DS

ID (at VGS=10V) 10A
R
R

(at VGS=10V) < 13mΩ

DS(ON)

(at VGS = 4.5V) < 16mΩ

DS(ON)

40V

100% UIS Tested
100% Rg Tested

SOIC-8

Top View Bottom View

D1

Top View

S2

138

G2

2

S1
G1

4 5

A

D2
D2

7

D1

6

G1

D1

G2

S1

Maximum UnitsParameter

Drain-Source Voltage 40

Continuous Drain
Current

Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH

TA=25°C
TA=70°C

C

C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

IAS, I
EAS, E

P

D

TJ, T

AR

STG

10

8

50

AR

61

mJ

2

1.3

D2

S2

V
V±20Gate-Source Voltage

A

A35

W

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Rev 1: Nov 2010 www.aosmd.com Page 1 of 6

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

48
74
32

62.5
90
40

UnitsParameter Typ Max

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO4884

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

40 V

VDS=40V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A

1.55 2.2 2.7 V
50 A

±100 nA

11 13

TJ=125°C 16.5 20
VGS=4.5V, ID=10A
VDS=5V, ID=10A
IS=1A,VGS=0V

12.7 16 mΩ
50 S

0.7 1 V

2.5 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1200 1500 1950 pF

150 215 280 pF

80 135 190 pF

1.7 3.5 5.3 Ω

SWITCHING PARAMETERS

Qg(10V) 22 27.2 33 nC
Qg(4.5V) 10 13.6 16 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=10V, VDS=20V, ID=10A

Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=10V, VDS=20V, RL=2Ω,

R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

IF=10A, dI/dt=500A/µs

IF=10A, dI/dt=500A/µs

J(MAX)

3.6 4.5 5.4 nC

3.8 6.4 9 nC

6.4 ns

17.2 ns

GEN

=3Ω

29.6 ns

16.8 ns

9

13 17 ns

25

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse ratin g.

35 45

nC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1: Nov 2010 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

125°C

125°C

25°C

125°C

10V

3.5V

AO4884

120

100

80

60

(A)

D

I

40

20

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

20
18
16

)

14

Ω

Ω

Ω

Ω

(m

12

DS(ON)

10

R

8
6
4

0 5 10 15 20

Figure 3: On-Resistance vs. Drain Current and Gate

4.5V
4V

VGS=3V

VDS (Volts)

VGS=4.5V

VGS=10V

ID (A)

Voltage (Note E)

100

VDS=5V

80

60

(A)

D

I

40

25°C

20

0

2 2.5 3 3.5 4 4.5

Figure 2: Transfer Characteristics (Note E)

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

VGS=10V
ID=10A

VGS(Volts)

VGS=4.5V
ID=10A

Temperature (°C)

(Note E)

17

5
2

10

0

18

25

ID=10A

20

)

Ω

Ω

Ω

Ω

(m

15

DS(ON)

R

10

5

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS (Volts)

(Note E)

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev 1: Nov 2010 www.aosmd.com Page 3 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

rss

10µs

10s

100

µ

AO4884

10

VDS=20V
ID=10A

8

6

(Volts)

GS

4

V

2

0

0 5 10 15 20 25 30

Qg (nC)

Figure 7: Gate-Charge Characteristics

100

TA=25°C

TA=150°C

(A) Peak Avalanche Current

AR

I

TA=125°C

10

1 10 100 1000

Time in avalanche, tA (µµµµs)

Figure 9: Single Pulse Avalanche capability (Note

C)

TA=100°C

2500

2000

C

iss

1500

1000

Capacitance (pF)

C

500

oss

0

0 10 20 30 40

VDS (Volts)

Figure 8: Capacitance Characteristics

1000.0

100.0

R

DS(ON)

10.0

(Amps)

1.0

D

I

T

=150°C

0.1

J(Max)

TA=25°C

0.0

0.01 0.1 1 10 100

VDS (Volts)

Figure 10: Maximum Forward Biased

Safe Operating Area (Note F)

10ms

10000

TA=25°C

1000

100

Power (W)

10

1

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Rev 1: Nov 2010 www.aosmd.com Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

J,PK=TA+PDM.Zθ

JA.Rθ

JA

T

T

10

D=Ton/T
T

R

=90°C/W

θJA

1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

Normalized Transient

Thermal Resistance

0.01

JA

θ

θ

θ

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

AO4884

Rev 1: Nov 2010 www.aosmd.com Page 5 of 6

VDC

Rg

AO4884

Gate Charge Test Circuit & Waveform

Vgs

Qg

Vds

10V

Qgs

Qgd

Charge

90%

10%

+

+

Vds

DUT

VDC

-

-

Vgs

Ig

Resistive Switching Test Circuit & Waveforms

RL

Vds

Vgs

DUT

+

Vdd

VDC

-

Vgs

Vds +

Vds -

Ig

Vgs

Rg

Vgs

Isd

Vgs

Vds

Id

DUT

Vgs

t t

d(on)

r

t

on

t

t

d(off)

t

off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

DUT

Vgs

E = 1/2 LI

AR

Vds

+

Vdd

VDC

-

Id

Vgs

2

AR

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

Isd

Vds

I

F

dI/dt

rr

I

RM

f

BV

DSS

I

AR

Vdd

Rev 1: Nov 2010 www.aosmd.com Page 6 of 6