Page 1
AO4842
Symbol
Symbol
Typ
Max
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
A
AO4842
30V Dual N-Channel MOSFET
30V Dual N-Channel MOSFET
General Description
General Description
The AO4842 uses advanced trench technology to
The AO4842 uses advanced trench technology to
provide excellent R
provide excellent R
two MOSFETs make a compact and efficient switch
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
and synchronous rectifier combination for use in
buck converters.
buck converters.
SOIC-8
SOIC-8
Top View Bottom View
Top View Bottom View
Pin1
Pin1
and low gate charge. The
and low gate charge. The
DS(ON)
DS(ON)
S2
S2
G2
G2
S1
S1
G1
G1
Product Summary
Product Summary
VDS(V) = 30V
VDS(V) = 30V
ID= 7.7A (VGS= 10V)
ID= 7.7A (VGS= 10V)
R
R
R
R
100% UIS Tested
100% UIS Tested
100% Rg Tested
100% Rg Tested
Top View
Top View
1
1
2
2
3
3
4 5
4 5
< 21mΩ (VGS= 10V)
< 21mΩ (VGS= 10V)
DS(ON)
DS(ON)
< 30mΩ (VGS= 4.5V)
< 30mΩ (VGS= 4.5V)
DS(ON)
DS(ON)
D2
D2
8
8
D2
D2
7
7
D1
D1
6
6
D1
D1
G1
G1
D1
D1
S1
S1
G2
G2
D2
D2
S2
S2
A
Parameter Maximum Units
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Continuous Drain
Current
AF
Pulsed Drain Current
TA=25°C
TA=70°C
B
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range -55 to 150 °C
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
7.7
6.5
64
2
1.44
A
W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
50 62.5
82 110
41 50
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Page 2
AO4842
t
4.5
ns
Turn-On DelayTime
t
D(on)
4.5
ns
Turn-On DelayTime
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V
VDS=V
GS ID
=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7.7A
VGS=4.5V, ID=5A
VDS=5V, ID=7.7A
IS=1A,VGS=0V
30 V
0.004 1
TJ=55°C 5
100 nA
1.5 2.1 2.6 V
64 A
16.8 21
TJ=125°C 24 29
23.4 30 mΩ
20 S
0.75 1 V
2.4 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
373 448 pF
67 pF
41 pF
1.8 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) 7.2 11 nC
Qg(4.5V) 3.5 nC
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=10V, VDS=15V, ID=7.7A
1.3 nC
1.7 nC
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: May. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
θJA
VGS=10V, VDS=15V, RL=1.95Ω,
R
=3Ω
GEN
IF=7.7A, dI/dt=100A/µs
IF=7.7A, dI/dt=100A/µs
and lead to ambient.
θJL
2.7 ns
14.9 ns
2.9 ns
10.5 12.6
ns
4.5 nC
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Page 3
AO4842
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
05101520
25°C
125
60
60
50
50
40
40
30
30
(A)
(A)
D
D
I
I
20
20
10
10
40
40
35
35
30
30
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
(m
(m
25
25
DS(ON)
DS(ON)
R
R
20
20
5V
10V
10V
0
0
0 1 2 3 4 5
0 1 2 3 4 5
5V
6V
6V
Fig 1: On-Region Characteristics
Fig 1: On-Region Characteristics
6V
6V
VDS(Volts)
VDS(Volts)
VGS=4.5V
VGS=4.5V
VGS=4.5V
VGS=4.5V
VGS=10V
VGS=10V
VGS=3.5V
VGS=3.5V
4.5V
4.5V
15
15
VDS=5V
VDS=5V
VDS=5V
12
12
9
9
(A)
(A)
D
D
I
I
6
6
3
3
0
0
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
VDS=5V
125°C
125°C
125°C
125°C
1.5 2 2.5 3 3.5 4 4.5
1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 2: Transfer Characteristics
VGS(Volts)
25°
25°
VGS=10V
VGS=10V
25°C
25°C
VGS=4.5V
VGS=4.5V
1
15
15
10
10
VGS=10V
VGS=10V
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
1
Normalized On-Resistance
Normalized On-Resistance
0.8
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
60
ID=7.5A
ID=7.7A
50
40
Ω
Ω)
Ω
Ω
(m
30
DS(ON)
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
R
20
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
125°C
°
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
125°C
25°C
10
2 4 6 8 10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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Page 4
AO4842
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
rss
10µs
10µs
10ms
1ms
0.1s
100µs
10s
rss
10µs
10µs
10ms
1ms
0.1s
100µs
10s
(Volts)
(Volts)
GS
GS
V
V
100.0
100.0
10.0
10.0
(Amps)
(Amps)
D
D
I
I
10
10
VDS=15V
VDS=15V
VDS=15V
VDS=15V
ID=7.7A
ID=7.7A
ID=7.5A
ID=7.5A
0 2 4 6 8
0 2 4 6 8
Qg(nC)
=150°C
=150°C
Qg(nC)
VGS=10V, VDS=15V, ID=7.4A
VGS=10V, VDS=15V, RL=2.0Ω, R
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
R
R
DS(ON)
DS(ON)
limited
limited
T
T
J(Max)
J(Max)
TA=25°C
TA=25°C
1.0
1.0
0.1
0.1
8
8
6
6
4
4
2
2
0
0
600
600
500
500
C
C
iss
400
400
300
300
C
200
200
Capacitance (pF)
Capacitance (pF)
100
100
0
0
50
50
40
40
30
30
20
20
Power (W)
Power (W)
10
10
C
oss
oss
C
C
oss
oss
C
C
C
C
rss
rss
0 5 10 15 20 25 30
0 5 10 15 20 25 30
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
=3Ω
GEN
VDS(Volts)
VDS(Volts)
iss
T
=150°C
T
=150°C
J(Max)
J(Max)
TA=25°C
TA=25°C
0.0
0.0
0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS(Volts)
=7.4A, dI/dt=100A/µs
I
F
IF=7.4A, dI/dt=100A/µs
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=62.5°C/W
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
1
0.1
Normalized Transient
Thermal Resistance
θ
θJA
θ
θ
Z
Single Pulse
P
D
T
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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