Datasheet AO4826 Specification

Symbol

Symbol

Typ

Max

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

AO4826

V

Pin1

60V Dual N-Channel MOSFET

General Description

The AO4826 uses advanced trench technology to
provide excellent R

device is suitable for use as a load switch or in PWM
applications.

SOIC-8

Top View Bottom View

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current

A

Pulsed Drain Current

Power Dissipation
Junction and Storage Temperature Range

and low gate charge. This

DS(ON)

A

TA=25°C
TA=70°C

B

TA=25°C
TA=70°C

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

S2
G2
S1
G1

STG

Product Summary

(V) = 60V

DS

ID = 6.3A (VGS = 10V)
R
R

100% UIS Tested
100% Rg Tested

Top View

< 25mΩ (VGS = 10V)

DS(ON)

< 30mΩ (VGS = 4.5V)

DS(ON)

D2
D2
D1
D1

Maximum UnitsParameter

-55 to 150

60

6.3
5

40

2

1.28

G1

D1

S1

D2

G2

S2

V
V±20

A

W
°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

t ≤ 10s

Steady-State

C

Steady-State

R

θJA

R

θJL

50 62.5
73 110
31 40

°C/W
°C/W
°C/W

AO4826

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

I

SM

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Pulsed Body Diode Current

B

ID=250µA, VGS=0V
VDS=48V, VGS=0V

VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6.3A

VGS=4.5V, ID=5.7A
VDS=5V, ID=6.3A
IS=1A,VGS=0V

60 V

TJ=55°C 5

100 nA

1 2.1 3 V

40 A

20 25

TJ=125°C 34 42

22 30 mΩ
27 S

0.74 1 V

40 A

1

µA

mΩ

3 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1920 2300 pF

155 pF
116 pF

0.65 0.8 Ω

SWITCHING PARAMETERS

Qg(10V) 47.6 58 nC
Qg(4.5V) 24.2 30 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

VGS=10V, VDS=30V, ID=6.3A

VGS=10V, VDS=30V, RL=4.7Ω,
R

=3Ω

GEN

IF=6.3A, dI/dt=100A/µs
IF=6.3A, dI/dt=100A/µs

6 nC

14.4 nC

7.6 ns
5 ns

28.9 ns

5.5 ns

33.2 40

ns

43 nC

A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

Rev 6 : Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4826

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3.5V

25°C

125°C

VGS=4.5V

VGS=10V

25°C

125°C

40

10V

4V

30

20

(A)

D

I

4.5V

10

VGS=3V

0

0 1 2 3 4 5

VDS (Volts)

Fig 1: On-Region Characteristics

24

22

)

Ω

Ω

Ω

Ω

(m

20

DS(ON)

R

18

30

25

20

15

(A)

D

I

VDS=5V

125°C

10

5

0

1.5 2 2.5 3 3.5 4

VGS(Volts)

Figure 2: Transfer Characteristics

2.2
2

VGS=10V

ID=6.3A

1.8

1.6

VGS=4.5V
ID=5.7A

1.4

1.2
1

Normalized On-Resistance

25°C

16

0 5 10 15 20

ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

50

ID=6.3A

40

)

Ω

Ω

Ω

Ω

(m

30

DS(ON)

R

20

10

2 4 6 8 10

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)

Figure 6: Body-Diode Characteristics

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AO4826

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

rss

100µs

limited

T

on

T

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

10µs

10

VDS=15V

8

ID=6.3A

6

(Volts)

GS

4

V

2

0

0 10 20 30 40 50

Qg (nC)

Figure 7: Gate-Charge Characteristics

100.0
R

DS(ON)

10.0

(Amps)

D

I

1.0
T

J(Max)

=150°C

TA=25°C

3500
3000

C

2500

iss

2000

1500

C

Capacitance (pF)

1000

oss

500

0

0 5 10 15 20 25 30

VDS (Volts)

Figure 8: Capacitance Characteristics

40

T

=150°C

J(Max)

TA=25°C

30

20

Power (W)

10

0.1

0.1 1 10 100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

θJA

In descending order

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

1

P

0.1

Normalized Transient

Thermal Resistance

JA

θ

θ

θ

θ

Z

D

Single Pulse

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

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