Datasheet AO4803A Specification

30V Dual P-Channel MOSFET

V

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

Pin1

Symbol

Maximum

Units

Parameter

A D

A

Pin1

General Description Product Summary

AO4803A

The AO4803A uses advanced trench technology to provide excellent R

with low gate charge. This

DS(ON)

device is suitable for use as a load switch or in PWM applications.

DS

ID (at VGS=-10V) -5A R R

(at VGS=-10V) < 46mΩ

DS(ON)

(at VGS = -4.5V) < 74mΩ

DS(ON)

-30V

100% UIS Tested 100% Rg Tested

SOIC-8

D

Top View Bottom View

A

S2

S2 G2

G2 S1

S1 G1

G1

Top View

138

2

4 5

D2

D2 D2

D2

7

D1

6

D1

G1

D

S1

G2

Maximum UnitsParameter

Drain-Source Voltage -30

Continuous Drain Current

Pulsed Drain Current Avalanche Current Avalanche energy L=0.1mH

TA=25°C TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

IAS, I EAS, E

P

D

TJ, T

AR

STG

-5

-4

-30

AR

mJ14

2

1.3

D

S2

V V±20Gate-Source Voltage

A

A17

W

Thermal Characteristics

Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead

t ≤ 10s Steady-State Steady-State

Symbol

R

θJA

R

θJL

48 74 35

62.5 110

40

UnitsParameter Typ Max

°C/W °C/W °C/W

www.aosmd.com Page 1 of 6

tr5.5

ns

Turn-On Rise Time

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO4803A

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current Gate-Body leakage current

Gate Threshold Voltage On state drain current

Static Drain-Source On-Resistance

Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V

-30 V

VDS=-30V, VGS=0V -1

TJ=55°C -5 VDS=0V, VGS= ±20V VDS=V

GS ID

=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-5A

-1.5 -2 -2.5 V

-30 A

±100 nA

32 46

TJ=125°C 48 68 VGS=-4.5V, ID=-4A VDS=-5V, ID=-5A IS=-1A,VGS=0V

51 74 mΩ 13 S

-0.7 -1 V

-2.5 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

3.5 7.5 11.5 Ω

520 pF 100 pF

65 pF

SWITCHING PARAMETERS

Qg(10V) 9.2 11 nC Qg(4.5V) 4.6 6 nC Q

gs

Q

gd

t

D(on)

Total Gate Charge Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime

VGS=-10V, VDS=-15V, ID=-5A

1.6 nC

2.2 nC

7.5 ns VGS=-10V, VDS=-15V, RL=3Ω, R

t

D(off)

t

f

t

rr

Q

rr

A. The value of R value in any given application depends on the user's specific board design. B. The power dissipation PDis based on T C. Repetitive rating, pulse width limited by junction temperature T initialTJ=25°C. D. The R E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T

Turn-Off DelayTime Turn-Off Fall Time

Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

GEN

=3Ω

19 ns

7 ns IF=-5A, dI/dt=100A/µs IF=-5A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

11 ns

5.3

nC

Rev 2: Nov 2011 www.aosmd.com Page 2 of 6

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

-

6V

-

8V

125°C

-

6V

-

8V

40

-10V

35

35 30

30 25

25

VGS=-4.5V

=-10V

VGS=-4.5V

VGS=-3.5V

(A)

20

D

-I

15

15 10

10

5

5 0

0

0 1 2 3 4 5

-VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

80

80 70

70 60

60

Ω

Ω)

Ω

Ω)

Ω

50

(m

40

DS(ON)

R

30

30 20

20 10

10

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and Gate

-VDS(Volts)

VGS=-4.5V

V

-ID(A)

Voltage (Note E)

-5V

-4V

30

VDS=-5V

25

20

(A)

15

D

-I

10

25°C

5

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8

0.8 0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

-VGS(Volts)

VGS=-10V

VGS=-10V ID=-5A

ID=-5A

Temperature (°C)

(Note E)

25°C

VGS=-4.5V

VGS=-4.5V ID=-4A

ID=-4A

AO4803A

17

5 2

10

0

18

120

100

80

Ω

Ω)

Ω

(m

60

DS(ON)

R

40

20

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

25°C

-VGS(Volts) (Note E)

ID=-5A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

-I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

-VSD(Volts)

Rev 2: Nov 2011 www.aosmd.com Page 3 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

P

10

D=Ton/T

D=Ton/T T

T

J,PK=TA+PDM.ZθJA.RθJA

1

R

=110°C/W

R

=110°C/W

θJA

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θJA

θ

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

In descending order

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Pulse Width (s)

T

AO4803A

Rev 2: Nov 2011 www.aosmd.com Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

10µs

10s

100µs

C

10µs

10s

100µs

AO4803A

10

VDS=-15V

VDS=-15V ID=-5A

ID=-5A

8

6

(Volts)

GS

4

-V

2

0

0 2 4 6 8 10

Figure 7: Gate-Charge Characteristics

100.0

(A) Peak Avalanche Current

AR

-I

100.0 TA=25°C

TA=25°C

TA=150°C

10.0

1.0

1.0 1 10 100 1000

1 10 100 1000

Figure 9: Single Pulse Avalanche capability (Note C)

Qg(nC)

TA=100°C

Time in avalanche, tA(µµµµs)

TA=125°C

800

800 700

700

C

600

600 500

500 400

400 300

300

Capacitance (pF)

200

200 100

100

0

0 5 10 15 20 25 30

100.0

10.0

1.0

(Amps)

D

-I

0.1

0.0

0.01 0.1 1 10 100

C

oss

Figure 8: Capacitance Characteristics

R

DS(ON)

limited

T

=150°C

T

=150°C

J(Max)

TA=25°C

Figure 10: Maximum Forward Biased Safe

Operating Area (Note F)

C

iss

-VDS(Volts)

DC

1ms

1ms 10ms

10ms

10000

TA=25°C

1000

100

Power (W)

10

1

0.00001 0.001 0.1 10 1000

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Pulse Width (s)

Rev 2: Nov 2011 www.aosmd.com Page 5 of 6

-

VDC

Rg

AO4803A

Gate Charge Test Circuit & Waveform

Vgs

Qg

-

+

DUT

Vgs

Ig

RL

Vds

DUT

Vgs

DUT

-

Vds

VDC

+

Resistive Switching Test Circuit & Waveforms

-

Vdd

VDC

+

Vgs

-10V

t t

d(on)

Qgd

Qgs

t

on

r

Qgd

Charge

t

off

t

d(off)

f

90%

Vgs

Vds +

Vds -

Ig

Vgs

Rg

Isd

Vgs

Vds

Id

DUT

Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

Vgs

VDC

-

Vdd

+

E = 1/2 LI

AR

Vds

Id

2

2 AR

AR

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

-Isd

-Vds

-I

F

dI/dt

rr

-I

RM

I

Vdd

10%

BV

AR

DSS

Rev 2: Nov 2011

www.aosmd.com

Page 6 of 6

Datasheet AO4803A Specification

Specifications and Main Features

Frequently Asked Questions

User Manual