Page 1
30V Dual N-Channel MOSFET
V
Symbol
Absolute Maximum Ratings T
=25°C unless otherwise noted
D1
Pin1
V
DS
A
A D
V
Drain-Source Voltage
30
General Description Product Summary
AO4800B
The AO4800B uses advanced trench technology to
provide excellent R
and low gate charge. The two
DS(ON)
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters.
DS
ID (at VGS=10V) 6.9A
R
R
R
(at VGS=10V) < 27mΩ
DS(ON)
(at VGS = 4.5V) < 32mΩ
DS(ON)
(at VGS = 2.5V) < 50mΩ
DS(ON)
30V
100% UIS Tested
100% Rg Tested
SOIC-8
Top View Bottom View
A
S2
G2
S1
G1
Top View
138
2
4 5
D2
D2
7
D1
6
D1
G1
G2
S1
Maximum UnitsParameter
V
GS
C
B
TA=25°C
TA=70°C
C
TA=25°C
TA=70°C
I
D
I
DM
IAS, I
C
EAS, E
P
D
TJ, T
AR
AR
STG
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C
6.9
5.8
30
10 mJ
2
1.3
D2
S2
V±12Gate-Source Voltage
A
A14
W
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
48
74
32
62.5
90
40
UnitsParameter Typ Max
°C/W
°C/W
°C/W
www.aosmd.com Page 1 of 6
Page 2
tr2.5
ns
Turn-On Rise Time
VGS=10V, V
=15V, R
=2.2Ω,
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO4800B
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
VDS=0V, VGS= ±12V
VDS=V
GS ID
=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
0.7 1.1 1.5 V
30 A
17.8 27
100 nA
TJ=125°C 28 40
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V, ID=5A
IS=1A,VGS=0V
19 32 mΩ
24 50 mΩ
33 S
0.7 1 V
2.5 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1.5 3 4.5 Ω
630 pF
75 pF
50 pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
J(MAX)
VGS=4.5V, VDS=15V, ID=6.9A
DS
R
=3Ω
GEN
L
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
=150°C. The SOA curve provides a single pulse rating.
6 7 nC
1.3 nC
1.8 nC
3 ns
25 ns
4 ns
8.5 ns
2.6
nC
Rev 4: Dec 2011 www.aosmd.com Page 2 of 6
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Page 3
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5V
(Note E)
25°C
AO4800B
40
10V
35
30
25
20
(A)
D
I
15
10
5
0
0 1 2 3 4 5
Fig 1: On-Region Characteristics (Note E)
30
25
Ω
Ω)
Ω
Ω
(m
20
DS(ON)
R
15
10
0 5 10 15 20
Figure 3: On-Resistance vs. Drain Current and Gate
3V
VGS=2V
VDS(Volts)
VGS=4.5V
VGS=10V
ID(A)
Voltage (Note E)
2.5V
15
VDS=5V
12
9
(A)
D
I
6
3
0
0 0.5 1 1.5 2 2.5 3
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
125°C
VGS(Volts)
VGS=4.5V
ID=6A
Figure 4: On-Resistance vs. Junction Temperature
Temperature (°C)
25°C
VGS=10V
ID=6.9A
17
5
2
10
0
18
50
40
Ω
Ω)
Ω
Ω
(m
30
DS(ON)
R
20
10
0 2 4 6 8 10
Figure 5: On-Resistance vs. Gate-Source Voltage
VGS(Volts)
(Note E)
ID=6.9A
125°C
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
1.0E-05
125°C
0.0 0.2 0.4 0.6 0.8 1.0
Figure 6: Body-Diode Characteristics (Note E)
VSD(Volts)
25°C
Rev 4: Dec 2011 www.aosmd.com Page 3 of 6
Page 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
C
Figure 10: Maximum Forward Biased Safe
10µs
10s
100µs
Figure 10: Maximum Forward Biased Safe
AO4800B
5
VDS=15V
ID=6.9A
4
3
(Volts)
GS
2
V
1
0
0 2 4 6 8
Figure 7: Gate-Charge Characteristics
Qg(nC)
100.0
TA=25°C
TA=100°C
TA=150°C
10.0
TA=125°C
(A) Peak Avalanche Current
AR
I
1.0
1 10 100 1000
Figure 9: Single Pulse Avalanche capability (Note C)
Time in avalanche, tA(µµµµs)
1000
800
C
iss
600
400
C
Capacitance (pF)
oss
200
0
0 5 10 15 20 25 30
Figure 8: Capacitance Characteristics
VDS(Volts)
100.0
10.0
R
DS(ON)
limited
1.0
(Amps)
D
I
0.1
T
=150°C
J(Max)
TA=25°C
DC
0.0
0.01 0.1 1 10 100
VDS(Volts)
Operating Area (Note F)
1ms
10ms
10000
TA=25°C
1000
100
Power (W)
10
1
0.00001 0.001 0.1 10 1000
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Pulse Width (s)
Rev 4: Dec 2011 www.aosmd.com Page 4 of 6
Page 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
on
P
AO4800B
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
1
R
=90°C/W
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Normalized Transient
Thermal Resistance
0.01
θ
θJA
θ
θ
Z
Single Pulse
T
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Pulse Width (s)
Rev 4: Dec 2011 www.aosmd.com Page 5 of 6
Page 6
Vdd
+
Vgs
I
AO4800B
Gate Charge Test Circuit & Waveform
Vgs
Qg
+
VDC
-
DUT
+
Vds
VDC
-
Vgs
Ig
Resistive Switching Test Circuit & Waveforms
RL
Vds
+
Vdd
VDC
-
Rg
Vgs
DUT
10V
Qgs Qgd
Charge
Vds
90%
10%
Vgs
Vds +
Vds -
Ig
Vgs
Vgs
Rg
Isd
Vgs
Vds
Id
DUT
Vgs
t t
d(on)
r
t
on
t
d(off )
t
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
DUT
E = 1/2 LI
AR
Vds
VDC
-
Id
Vgs
2
AR
Diode Recovery Test Circuit & Waveforms
Q = - Idt
rr
Vgs
t
L
+
Vdd
VDC
-
Isd
Vds
I
F
dI/dt
rr
I
RM
f
BV
DSS
AR
Vdd
Rev 4: Dec 2011 www.aosmd.com Page 6 of 6
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