Datasheet AO4622 Specification

Symbol

Max p-channel

Units

Symbol

Device

Typ

Max

Units

A

A

B

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

A

B

B

AO4622

20V Dual P + N-Channel MOSFET

Pin1

n-channel

p-channel

General Description

The AO4622 uses advanced trench technology
MOSFETs to provide excellent R
charge. The complementary MOSFETs may be used
to form a level shifted high side switch, and for a
host of other applications.

SOIC-8

Top View Bottom View

and low gate

DS(ON)

Product Summary

N-Channel P-Channel

VDS (V) = 20V -20V
ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V)
R

DS(ON) RDS(ON)

< 23mΩ (VGS=10V) < 53mΩ (VGS = -4.5V)
< 30mΩ (VGS=4.5V) < 87mΩ (VGS = -2.5V)
< 84mΩ (VGS=2.5V)

100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested

D1

Top View

S1
G1

S2
G2

D1
D1

D2
D2

G1

S1

D2

G2

S2

A

Parameter Max n-channel

Drain-Source Voltage

Continuous Drain
Current

AF

TA=25°C
TA=70°C

Pulsed Drain Current

TA=25°C

Power Dissipation

TA=70°C
Avalanche Current
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

I

AR

E

AR

TJ, T

STG

20 -20

±16Gate-Source Voltage

7.3

6.2
35

2

1.44
13
25

Thermal Characteristics: n-channel and p-channel
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s
Steady-State
Steady-State

t ≤ 10s
Steady-State
Steady-State

R

θJA

R

θJL

R

θJA

R

θJL

n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
n-ch 35 40 °C/W

p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
p-ch 35 40 °C/W

V

±12

V

-5

-4.2

A

-25
2

1.44
13
25

-55 to 150-55 to 150

W

A

mJ

°C

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4622

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V
VDS=16V, VGS=0V

VDS=0V, VGS=±16V
VDS=V

GS ID

=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7.3A

VGS=4.5V, ID=6.4A
VGS=2.5V, ID=2A
VDS=5V, ID=7.3A
IS=1A

20 V

1

TJ=55°C 5

100 nA

0.6 1.25 2 V
35 A

19 23

TJ=125°C 28 33.6

24 30 mΩ
67 84 mΩ
17 S

0.7 1 V
3 A

uA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

900 1100 pF
162 pF
105 pF

0.9 1.35 Ω

SWITCHING PARAMETERS

Qg(10V) 15 18 nC
Qg(4.5V) 7.2 9 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

VGS=10V, VDS=10V, ID=6.5A

VGS=10V, VDS=10V, RL=1.4Ω,
R

=3Ω

GEN

IF=7.3A, dI/dt=100A/µs
IF=7.3A, dI/dt=100A/µs

1.8 nC

2.8 nC

4.5 ns

9.2 ns

18.7 ns

3.3 ns

18

ns

9.5 nC

A: The value of R
in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Nov 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient. R

θJL

θJL

and R

are equivalent terms referring to

θJC

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4622

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

125°C

-40°C

125°C

25°C

10V

60

6V

4.5V

50

40

3.5V

30

(A)

D

I

20

10

VGS=3V

0

0 1 2 3 4 5

VDS (Volts)

Figure 1: On-Region Characteristics

100

90
80
70

)

Ω

Ω

Ω

Ω

60

(m

50
40

DS(ON)

R

30
20
10

0

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and

VGS=2.5V

VGS=4.5V

VGS=10V

ID (A)

Gate Voltage

30

VDS=5V

25

20

15

(A)

D

I

10

25°C

-40°C

1.4

494 593

5

0

1 2 3 4 5

Figure 2: Transfer Characteristics

1.60

1.40

1.20

1.00

0.80

Normalized On-Resistance

0.60

-50 -25 0 25 50 75 100 125 150 175

VGS=4.5V, 6.4A

Figure 4: On-Resistance vs. Junction

692 830

VGS(Volts)

193

18

VGS=10V, 7.3A

VGS=2.5V, 5.5A

59

142

Temperature (°C)

Temperature

40

35

30

)

Ω

Ω

Ω

Ω

(m

25

DS(ON)

R

20

15

10

3 4 5 6 7 8 9 10

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

ID=7.3A

125°C

1.E+02

1.E+01

1.E+00

1.E-01

(A)

S

I

1.E-02

1.E-03

1.E-04

1.E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD (Volts)

Figure 6: Body-Diode Characteristics

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AO4622

N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

rss

10µs

TA=25°C

T

T

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

10

8

VDS=10V
ID=7.3A

6

(Volts)

GS

4

V

2

0

0 3 6 9 12 15

Qg (nC)

Figure 7: Gate-Charge Characteristics

100.0

10.0

R

1.0

(Amps)

D

I

DS(ON)

0.1
T

=150°C

J(Max)

1ms

10s

DC

0.1s

1400

1200

C

1000

iss

800

600

C

Capacitance (pF)

400

oss

1.4

494 593
692 830

200

0

0 5 10 15 20

Figure 8: Capacitance Characteristics

50

40

30

20

Power (W)

10

VDS (Volts)

193

18

T

J(Max)

TA=25°C

=150°C

0.0

0.1 1 10 100

Figure 9: Maximum Forward Biased Safe

VDS (Volts)

Operating Area (Note E)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

θJA

In descending order

0

0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

1

P

0.1

Normalized Transient

Thermal Resistance

JA

θ

θ

θ

θ

Z

D

Single Pulse

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

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AO4622

VDC

Gate Charge Test Circuit & Waveform

Vgs

Qg

+

+

Vds

-

Vgs

Ig

Vds

VDC

DUT

-

Resistive Switching Test Circuit & Waveforms

RL

10V

Qgs Qgd

Charge

Vds

Vgs

Vds +

Vds -

Ig

Rg

Vgs

Vgs

Isd

DUT

DUT

VD C

+

Vdd

-

Vgs

Diode Recovery Test Circuit & W aveforms

L

+

Vdd

VD C

-

Vgs

Isd

Vds

t t

d(o n)

t

on

r

Q = - Idt

rr

I

F

dI/dt

t

d(o ff)

90%

10%

t

f

t

off

t

rr

I

RM

Vdd

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4622

A: The value of R

A: The value of R

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V
VDS=-16V, VGS=0V

VDS=0V, VGS=±12V
VDS=V

GS ID

=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-5A

VGS=-2.5V, ID=-4.2A
VDS=-5V, ID=-5A
IS=-1A,VGS=0V

-20 V

TJ=55°C -5

±100 nA

-1.3 -0.9 -0.5 V

-25 A
44 53

TJ=125°C 59 71

67 87 mΩ
13 S

-0.76 -1 V

-2.5 A

-1
µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

800 960 pF
131 pF
103 pF

6.7 10 Ω

SWITCHING PARAMETERS

Qg(10V) 15.5 nC
Qg(4.5V) 7.4 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

VGS=-4.5V, VDS=-10V, ID=-4.5A

VGS=-4.5V, VDS=-10V, RL=2Ω,
R

=3Ω

GEN

IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs

1.3 nC

2.9 nC

4.4 ns

7.6 ns
44 ns

13.5 ns
20

ns

9 nC

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

in any given application depends on the user's specific board design.

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.

rating.
C. The R

B: Repetitive rating, pulse width limited by junction temperature.
thermal resistance from junction to drain lead.

C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in

E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Nov 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

θJA

is the sum of the thermal impedence from junction to lead R

θJA

is the sum of the thermal impedence from junction to lead R

θJA

2

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient. R

θJL

and lead to ambient.

θJL

θJL

and R

are equivalent terms referring to

θJC

=25°C. The value

=25°C. The

A

A

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AO4622

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

125°C

25

-10V

20

15

(A)

D

-I

10

-3.5V

-4.5V

-6V

VGS=-2.5V

5

0

0 1 2 3 4 5

-VDS (Volts)

Fig 1: On-Region Characteristics

80

70

VGS=-2.5V

)

Ω

Ω

Ω

Ω

60

(m

50

DS(ON)

R

20

15

(A)

10

D

-I

VDS=-5V

25°C

5

-40°C

0

0.5 1.0 1.5 2.0 2.5 3.0

-VGS(Volts)

Figure 2: Transfer Characteristics

1.6

1.4

1.2

ID=-5A

1

VGS=-2.5V

VGS=-4.5V

ID=-4.2A

40

VGS=-4.5V

30

0 5 10 15 20 25

-ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

80

ID=-5A

60

)

Ω

Ω

Ω

Ω

125°C

(m

DS(ON)

R

40

25°C

20

0 2 4 6 8 10

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

0.8

Normalized On-Resistance

0.6

-50 -25 0 25 50 75 100 125 150

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

-I

1.0E-03

1.0E-04

25°C

-40°C

1.0E-05

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0

-VSD (Volts)

Figure 6: Body-Diode Characteristics

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AO4622

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

T

T

P

10µs

T

=25°C

10s

10

8

VDS=-10V
ID=-5A

6

(Volts)

GS

4

-V

2

0

0 4 8 12 16

-Qg (nC)

Figure 7: Gate-Charge Characteristics

100

10

R

DS(ON)

1

(Amps)

D

I

0

T

=150°C

J(Max)

1ms

10ms

DC

1s

1250

1000

750

C

iss

500

Capacitance (pF)

C

250

C

0

oss

rss

0 5 10 15 20

-VDS (Volts)

Figure 8: Capacitance Characteristics

60

T

50

TA=25°C

40

30

Power (W)

20

10

J(Max)

=150°C

0

0.1 1 10 100

Figure 9: Maximum Forward Biased Safe

VDS (Volts)

Operating Area (Note E)

0

0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1

Normalized Transient

Thermal Resistance

JA

θ

θ

θ

θ

Z

Single Pulse

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4622

VDC

Rg

Gate Charge Test Circuit & Waveform

Vgs

Qg

-

-10V

-

+

VDC

Vds

+

Qgs

DUT

Vgs

Ig

Resistive Switching Test Circuit & Waveforms

RL

Vds

Vgs

t

d(on)

t

on

t

r

Qgd

t

d(off)

Charge

t

off

t

f

-

Vgs

DUT

VDC

Vdd

+

90%

Vgs

Vds +

Vds -

Ig

Vgs

Isd

DUT

Vds

Diode Recovery Test Circuit & Waveforms

Vgs

L

+

Vdd

VDC

-

-Isd

-Vds

Q = - Idt

rr

-I

F

dI/dt

10%

t

rr

-I

RM

Vdd

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