Page 1
AO4612
p
60V Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4612 uses advanced trench technology
MOSFETs to provide excellent R
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
SOIC-8
Top View Bottom View
and low gate
DS(ON)
Features
n-channel p-channel
V
(V) = 60V -60V
DS
= 4.5A (VGS=10V) -3.2A (VGS = -10V)
I
D
R
DS(ON) RDS(ON)
< 56mΩ (VGS=10V) < 105mΩ (VGS = -10V)
< 77mΩ (V
100% Rg tested
1
S2
2
G2
3
S1
4
G1
=4.5V) < 135mΩ (VGS = -4.5V)
GS
D2
8
D2
7
D2
6
D1
D1
G2
S2
5
G1
D1
S1
Pin1
SOIC-8
Absolute Maximum Ratings T
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
TA=70°C
B
=25°C
T
A
TA=70°CPower Dissipation
Junction and Storage Temperature Range
=25°C unless otherwise noted
A
Symbol Max p-channel Units
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
n-channel
60 -60
±20Gate-Source Voltage
4.5
3.6
2
1.28
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
t ≤ 10s
A
Steady-State
Steady-State
Symbol Units
R
θJA
R
θJL
Typ
48
74
35
Alpha & Omega Semiconductor, Ltd.
-55 to 150-55 to 150
-channel
±20
-3.2
-2.6
-2020
2
1.28
Max
62.5
90
40
V
V
A
W
°C
°C/W
°C/W
°C/W
Page 2
AO4612
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
VDS=0V, VGS= ±20V
VDS=V
GS ID
=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.5A
VGS=4.5V, ID=3A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
60 V
TJ=55°C 5
1 2.1 3 V
20 A
46 56
TJ=125°C 79
64 77 mΩ
11 S
0.74 1 V
1
µA
100 nA
mΩ
3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
450 540 pF
60 pF
25 pF
1.65 2 Ω
SWITCHING PARAMETERS
Qg(10V) 8.5 10.5 nC
Qg(4.5V) 4.3 5.5 nC
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating. Rev3: Oct 2010
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=4.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=6.7Ω,
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
θJA
is the sum of the thermal impedence from junction to lead R
θJA
IF=4.5A, dI/dt=100A/µs
IF=4.5A, dI/dt=100A/µs
GEN
=3Ω
and lead to ambient.
θJL
1.6 nC
2.2 nC
4.7 7 ns
2.3 4.5 ns
15.7 24 ns
1.9 4 ns
27.5 35
ns
32 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
Page 3
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
4.0V
0255075100
125
150
175
4.0V
125°C
20
20
15
15
10
10
(A)
(A)
D
D
I
I
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
(m
(m
DS(ON)
DS(ON)
R
R
10V
10V
5.0V
5.0V
4.5V
4.5V
5
5
VGS=3.5V
VGS=3.5V
0
0
0 1 2 3 4 5
0 1 2 3 4 5
VDS(Volts)
Fig 1: On-Region Characteristics
Fig 1: On-Region Characteristics
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
0 5 10 15 20
0 5 10 15 20
VDS(Volts)
VGS=4.5V
VGS=4.5V
VGS=10V
VGS=10V
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
15
15
VDS=5V
VDS=5V
10
10
125°C
(A)
(A)
D
D
I
I
5
5
0
0
2 2.5 3 3.5 4 4.5 5
2 2.5 3 3.5 4 4.5 5
Figure 2: Transfer Characteristics
Figure 2: Transfer Characteristics
2
2
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1
1
Normalized On-Resistance
Normalized On-Resistance
0.8
0.8
125°C
VGS(Volts)
VGS(Volts)
VGS=10V
VGS=10V
ID=4.5A
ID=4.5A
25°C
25°C
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=4.5V
VGS=4.5V
ID=3.0A
ID=3.0A
140
120
100
Ω
Ω)
Ω
Ω
ID=4.5A
(m
80
DS(ON)
R
60
40
2 4 6 8 10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
125°C
25°C
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
1.0E-05
25°C
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
Page 4
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
rss
10ms
1ms
0.1s
1s
10s
DC
10µs
rss
10ms
1ms
0.1s
1s
10s
DC
10µs
(Volts)
(Volts)
GS
GS
V
V
100.0
100.0
10.0
10.0
10
10
8
8
6
6
4
4
2
2
0
0
0 10
0 10
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
R
R
DS(ON)
DS(ON)
VDS=30V
VDS=30V
ID= 4.5A
ID= 4.5A
Qg(nC)
Qg(nC)
800
800
600
600
C
C
iss
iss
400
400
C
C
oss
Capacitance (pF)
Capacitance (pF)
200
200
0
0
40
40
30
30
oss
C
C
0 10 20 30 40 50 60
0 10 20 30 40 50 60
VDS(Volts)
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
VDS(Volts)
T
T
TA=25°C
TA=25°C
J(Max)
J(Max)
=150°C
=150°C
1.0
1.0
(Amps)
(Amps)
D
D
I
I
0.1
0.1
T
=150°C
T
=150°C
J(Max)
J(Max)
TA=25°C
TA=25°C
0.0
0.0
0.1 1 10 100
VDS(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=62.5°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
θ
θJA
θ
θ
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Single Pulse
Power (W)
Power (W)
Pulse Width (s)
20
20
10
10
0
0
0.001 0.01 0.1 1 10 100 1000
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
D
T
T
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
Page 5
AO4612
Vds
DSS
VDC
VDC
Rg
Rg
Gate Charge Test Circuit & Waveform
Gate Charge Test Circuit & Waveform
Vgs
Vgs
Qg
Qg
10V
Vds
Vds
10V
Qgs Qgd
Qgs Qgd
Charge
Charge
90%
90%
10%
10%
+
+
+
+
Vds
Vds
VDC
-
-
Vgs
Vgs
Ig
Ig
Vds
Vds
Vgs
Vgs
VDC
-
DUT
DUT
RL
RL
DUT
DUT
-
Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
+
+
Vdd
Vdd
VDC
VDC
-
-
Vgs
Vds +
Vds -
Ig
Vgs
Vgs
Rg
Vgs
Isd
Vgs
Vds
Id
DUT
Vgs
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
L
t t
t t
r
r
d(on)
d(on)
t
t
on
on
E = 1/2 LI
E = 1/2 LI
AR
AR
t
t
t
t
d(off)
d(off)
t
t
off
off
2
2
AR
AR
Vds
Vgs
VDC
+
Vdd
-
Id
DUT
Vgs
Diode Recovery Test Circuit & Waveforms
Q = - Idt
rr
Vgs
t
L
+
Vdd
VDC
-
Isd
Vds
I
F
dI/dt
rr
I
RM
f
f
BV
BV
DSS
I
AR
Vdd
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
Page 6
AO4612
t812
ns
Turn-On DelayTime
t
D(on)
812ns
Turn-On DelayTime
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=-250µA, VGS=0V
VDS=-48V, VGS=0V
VDS=0V, VGS=±20V
VDS=V
GS ID
=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.2A
VGS=-4.5V, ID=-2.8A
VDS=-5V, ID=-3.2A
IS=-1A,VGS=0V
-60 V
TJ=55°C -5
-1 -2.1 -3 V
-20 A
84 105
TJ=125°C 145
106 135 mΩ
9 S
-0.73 -1 V
-1
µA
±100 nA
mΩ
-3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
930 1120 pF
85 pF
35 pF
7.2 9 Ω
SWITCHING PARAMETERS
Qg(10V) 16 20 nC
Qg(4.5V) 8 10 nC
Q
gs
Q
gd
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
VGS=-10V, VDS=-30V, ID=-3.2A
2.5 nC
3.2 nC
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
A: The value of R
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
curve provides a single pulse rating.
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
θJA
θJA
is the sum of the thermal impedence from junction to lead R
θJA
is the sum of the thermal impedence from junction to lead R
θJA
VGS=-10V, VDS=-30V, RL=9.4Ω,
R
=3Ω
GEN
IF=-3.2A, dI/dt=100A/µs
IF=-3.2A, dI/dt=100A/µs
and lead to ambient.
θJL
and lead to ambient.
θJL
3.8 7.5 ns
31.5 48 ns
7.5 15 ns
27 35
ns
32 nC
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
Page 7
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
(A)
(A)
D
D
-I
-I
130
130
120
120
110
110
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
(m
(m
100
100
DS(ON)
DS(ON)
R
R
90
90
80
80
20
20
-10V
-10V
15
15
10
10
5
5
0
0
0 1 2 3 4 5
0 1 2 3 4 5
Fig 1: On-Region Characteristics
Fig 1: On-Region Characteristics
VGS=-4.5V
VGS=-4.5V
-4.5V
-4.5V
-3.5V
-3.5V
-VDS(Volts)
-VDS(Volts)
-4.0V
-4.0V
VGS=-3.0V
VGS=-3.0V
VGS=-10V
VGS=-10V
30
30
VDS=-5V
25
25
20
20
(A)
(A)
15
15
D
D
-I
-I
10
10
5
5
0
0
1 1.5 2 2.5 3 3.5 4
1 1.5 2 2.5 3 3.5 4
Figure 2: Transfer Characteristics
Figure 2: Transfer Characteristics
2
2
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1
1
Normalized On-Resistance
Normalized On-Resistance
VDS=-5V
125°C
125°C
-VGS(Volts)
-VGS(Volts)
ID=-3.2A
ID=-3.2A
VGS=-10V
VGS=-10V
25°C
25°C
VGS=-4.5V
VGS=-4.5V
ID=-2.8A
ID=-2.8A
70
70
0 2 4 6 8 10
-ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
180
ID=-3.2A
160
Ω
Ω)
Ω
Ω
140
(m
120
DS(ON)
R
100
125°C
80
60
25°C
2 3 4 5 6 7 8 9 10
-VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.8
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
(A)
S
-I
1.0E-03
1.0E-04
1.0E-05
25°C
1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VSD(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
Page 8
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
rss
100µs
10ms
1ms
0.1s
1s
10s
DC
rss
100µs
10ms
1ms
0.1s
1s
10s
DC
on
P
10
10
(Volts)
(Volts)
GS
GS
-V
-V
100.0
100.0
10.0
10.0
(Amps)
(Amps)
D
D
-I
-I
VDS=-30V
8
8
6
6
4
4
2
2
0
0
0 4 8 12 16 20
0 4 8 12 16 20
1.0
1.0
0.1
0.1
0.0
0.0
VDS=-30V
ID=-3.2A
ID=-3.2A
-Qg(nC)
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
R
R
DS(ON)
DS(ON)
limited
limited
T
=150°C
T
=150°C
J(Max)
J(Max)
TA=25°C
TA=25°C
-Qg(nC)
0.1 1 10 100
-VDS(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1400
1400
1200
1200
C
C
iss
1000
1000
800
800
600
600
Capacitance (pF)
Capacitance (pF)
400
400
200
200
40
40
30
30
20
20
Power (W)
Power (W)
10
10
0
0
0.001 0.01 0.1 1 10 100 1000
0.001 0.01 0.1 1 10 100 1000
C
C
oss
oss
0
0
0 10 20 30 40 50 60
0 10 20 30 40 50 60
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
iss
C
C
-VDS(Volts)
-VDS(Volts)
T
=150°C
T
=150°C
J(Max)
J(Max)
TA=25°C
TA=25°C
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=62.5°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
θ
θJA
θ
θ
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
Single Pulse
Pulse Width (s)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
T
Page 9
AO4612
VDC
VDC
Rg
Rg
Gate Charge Test Circuit & Waveform
Gate Charge Test Circuit & Waveform
Vgs
Vgs
Qg
Qg
-
-
-
-
+
+
DUT
DUT
Vgs
Vgs
Ig
Ig
RL
RL
Vds
Vds
DUT
Vgs
Vgs
DUT
Vds
Vds
VDC
VDC
+
+
Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
-
-
Vdd
Vdd
VDC
VDC
+
+
Vgs
Vgs
-10V
-10V
Qgs Qgd
Qgs Qgd
t
t
on
on
t
t
t
t
d(on)
d(on)
r
r
t
t
d(off)
d(off)
Charge
Charge
t
t
off
off
t
t
f
f
90%
90%
Vgs
Vgs
Vgs
Vds +
Vds -
Ig
Rg
Vgs
Vgs
Isd
Vds
Id
DUT
Vds
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
DUT
Vgs
VDC
-
Vdd
+
E = 1/2 LI
AR
Vds
Id
Vgs
2
AR
Diode Recovery Test Circuit & Waveforms
Q = - Idt
rr
Vgs
t
L
+
Vdd
VDC
-
-Isd
-Vds
-I
F
dI/dt
rr
-I
RM
10%
10%
BV
I
AR
Vdd
DSS
Alpha & Omega Semiconductor, Ltd.
Alpha & Omega Semiconductor, Ltd.
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