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AO4604
Complementary Enhancement Mode Field Effect Transistor
Nov 2002
General Description
Features
n-channel p-channel
The AO4604 uses advanced trench
technology MOSFETs to provide excellen
R
and low gate charge. The
DS(ON)
complementary MOSFETs may be used
in power inverters, and other applications.
8
1
S2
G2
S1
G1
2
3
4
D2
7
D2
6
D1
5
D1
(V) = 30V -30V
V
DS
I
= 6.9A -5A
D
R
DS(ON) RDS(ON)
< 28mΩ (VGS=10V) < 52mΩ (VGS = 10V)
< 42mΩ (V
=4.5V) < 87mΩ (VGS = 4.5V)
GS
D2
G2
S2
SOIC-8
n-channel
Absolute Maximum Ratings T
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
TA=70°C
B
T
=25°C
A
=70°CPower Dissipation
T
A
Junction and Storage Temperature Range
=25°C unless otherwise noted
A
Symbol Max p-channel Units
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
30 -30
±20Gate-Source Voltage
6.9
5.8
30
2
1.44
G1
p-channel
D1
S1
-55 to 150-55 to 150
±20
-5
-4.2
-20
2
1.44
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
A
A
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
Symbol Device Typ Max Units
R
θJA
R
θJL
R
θJA
R
θJL
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
n-ch 35 40 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
p-ch 35 40 °C/W
Page 2
AO4604
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted): N-CHANNEL
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
Gate-Body leakage current VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
GS ID
=250µA
On state drain current VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
Forward Transconductance VDS=5V, ID=6.9A
Diode Forward Voltage IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30 V
1
5
µA
100 nA
1 1.9 3 V
20 A
22.5 28
31.3 38
34.5 42
mΩ
m
10 15.4 S
0.76 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
680 pF
102 pF
77 pF
3 Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=6.9A
=10V, VDS=15V, RL=2.2Ω,
V
GS
R
=3Ω
GEN
=6.9A, dI/dt=100A/µs
I
F
IF=6.9A, dI/dt=100A/µs
13.84 nC
6.74 nC
1.82 nC
3.2 nC
4.6 ns
4.1 ns
20.6 ns
5.2 ns
16.5
ns
7.8 nC
A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
Page 3
AO4604
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted): P-CHANNEL
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=5.0A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
µA
±100 nA
-1 -1.8 -3 V
-10 A
39 52
54 70
67 87
mΩ
m
6 8.6 S
-0.77 -1 V
-2.8 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
VGS=0V, VDS=-15V, f=1MHz
=0V, VDS=0V, f=1MHz
GS
700 pF
120 pF
75 pF
10 Ω
SWITCHING PARAMETERS
Qg (10V)
Qg (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3Ω,
R
=3Ω
GEN
IF=-5A, dI/dt=100A/µs
=-5A, dI/dt=100A/µs
I
F
14.7 nC
7.6 nC
2nC
3.8 nC
8.3 ns
5ns
29 ns
14 ns
23.5
ns
13.4 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
Page 4
AO4604
V
e
V
V
V
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
4.5V
6
5
4V
20
15
(A)
D
I
3.5
10
5
VGS=3V
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
60
50
)
Ω
40
VGS=4.5
(m
30
DS(ON)
R
20
16
VDS=5V
12
(A)
D
I
8
°
4
25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
(Volts)
V
GS
Figure 2: Transfer Characteristics
1.6
1.5
ID=5A
VGS=10V
1.4
1.3
VGS=4.5V
1.2
1.1
20
VGS=10V
10
0 5 10 15 20
(Amps)
I
D
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
70
)
Ω
(m
DS(ON)
R
60
50
40
30
20
ID=5A
125°C
25°C
10
246810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1
Normalized On-Resistance
0.9
0.8
0 50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
1.0E-02
Amps
S
I
125°C
1.0E-03
1.0E-04
25°C
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
(Volts)
V
SD
Figure 6: Body diode characteristics
Alpha & Omega Semiconductor, Ltd.
Page 5
AO4604
oss
s1ms
0.1s
d
A
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=15V
I
=6.9A
D
6
(Volts)
GS
4
V
2
0
02468101214
(nC)
Q
g
Figure 7: Gate-Charge characteristics
100
10
R
DS(ON)
limite
100µs
T
T
J(Max)
=150°C
=25°C
10µs
10m
(Amps)
D
I
1
1000
900
800
f=1MHz
V
GS
700
C
600
iss
500
400
300
Capacitance (pF)
200
100
C
rss
0
C
0 5 10 15 20 25 30
V
(Volts)
DS
Figure 8: Capacitance Characteristics
40
T
J(Max)
T
30
20
Power W
10
=0V
=150°C
=25°C
0.1
0.1 1 10 100
V
(Volts)
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=62.5°C/W
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
1
0.1
Normalized Transient
Thermal Resistance
JA
θ
Z
Single Pulse
P
T
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Page 6
AO4604
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
-6V
-5V
-4.5V
15
-4V
10
(A)
D
-I
5
-3.5V
VGS=-3V
-2.5V
0
0.00 1.00 2.00 3.00 4.00 5.00
(Volts)
-V
DS
Figure 1: On-Region Characteristics
100
80
)
Ω
(m
DS(ON)
R
60
VGS=-4.5V
VGS=-10V
40
10
8
VDS=-5V
6
(A)
D
-I
4
2
125°C
25°C
0
01234
-V
(Volts)
GS
Figure 2: Transfer Characteristics
1.60E+00
VGS=-4.5V
1.40E+00
VGS=-10V
1.20E+00
1.00E+00
ID=-5A
Normalized On-Resistance
20
13579
(A)
-I
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
ID=-5A
120
)
Ω
100
(m
80
DS(ON)
R
60
40
25°C
125°C
20
246810
-V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
8.00E-01
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
1E-01
1E-02
(A)
S
-I
1E-03
125°C
25°C
1E-04
1E-05
1E-06
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Alpha and Omega Semiconductor, Ltd.
Page 7
AO4604
0.1s1s10s
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=-15V
=-5A
I
8
D
6
(Volts)
GS
4
-V
2
0
0 2 4 6 8 10 12 14 16
-Q
(nC)
g
Figure 7: Gate-Charge Characteristics
100
10
T
J(Max)
=25°C
T
A
R
DS(ON)
limited
=150°C
10µs
100µs
1ms
(Amps)
D
-I
1
10ms
1200
1000
C
iss
800
600
400
Capacitance (pF)
C
oss
200
C
rss
0
0 5 10 15 20 25 30
-V
(Volts)
DS
Figure 8: Capacitance Characteristics
40
T
J(Max)
T
A
30
20
Power (W)
10
=150°C
=25°C
0.1
0.1 1 10 100
-V
(Volts)
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=62.5°C/W
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
1
0.1
Normalized Transient
Thermal Resistance
θJA
Z
P
T
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Page 8
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
θ
PACKAGE MARKING DESCRIPTION
SYMBOLS
A
A1
A2
aaa
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ± 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
1.45
0.00
−−−
0.33
b
c
0.19
D
4.80
E1
3.80
e
E
h
L
θ
0.25
0.40
−−−
0°
1.27 BSC
MAXMIN NOM MIN NOM MAX
1.50
−−−
1.45
−−−
−−−
−−−
−−−
−−−5.80
−−−
−−−
−−−
−−−
1.55
0.10
−−−
0.51
0.25
5.00
4.00
6.20
0.50
1.27
0.10
8°
RECOMMENDED LAND PATTERN
DIMENSIONS IN INCHESDIMENSIONS IN MILLIMETERS
0.057
0.000
−−−
0.013
0.007
0.189
0.150
0.050 BSC
0.010
0.016
−−−
0° −−−
0.059
−−−
0.057
−−−
−−−
−−−
−−−
−−−0.228
−−−
−−−
−−−
0.061
0.004
−−−
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
8°
LOGO 4 6 0 4
F A Y W L C
NOTE:
LOGO - AOS LOGO
4604 - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L C - ASSEMBLY LOT CODE
SOP-8 PART NO. CODE
PART NO. CODE
AO4604
4604
UNIT: mm
Rev. A
Page 9
SO-8 Carrier Tape
SO-8 Reel
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Tape and Reel Data
SO-8 Tape
Leader / Trailer
& Orientation
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