Datasheet AO4447 Specification

AO4447A

Symbol

C

Parameter

Symbol

Typ

Max

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

AD

S

S

30V P-Channel MOSFET

General Description

• The AO4447A uses advanced trench technology to
provide excellent R
device is ideal for load switch and battery protection
applications.

• RoHS and Halogen-Free Compliant

Top View Bottom View

D

D

D

D

with low gate charge.This

DS(ON)

SOIC-8

G

S

S

Product Summary

V

DS

ID(at VGS= -10V) -17A
R
R
R

(at VGS= -10V) < 7mΩ

DS(ON)

(at VGS= -4.5V) < 8mΩ

DS(ON)

(at VGS= -4V) < 9mΩ

DS(ON)

ESD Protected
100% UIS Tested
100% Rg Tested

Rg

G

-30V

D

J

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain
Current

Pulsed Drain Current
Avalanche Current

TA=25°C
TA=70°C

C

C

Avalanche energy L=0.1mH

TA=25°C

Power Dissipation

B

TA=70°C

Junction and Storage Temperature Range

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

t ≤ 10s
Steady State
Steady State

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

P

D

TJ, T

R
R

STG

θJA

θJL

Maximum

-30

±20

-17

-13

-160
54

146

3.1

2.0

31 40
59 75
16 24

UnitsParameter

V
V

A

A

mJ

W
°C-55 to 150

Units

°C/W
°C/W
°C/W

Rev.4.0: Sep. 2015

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Qg (-4.5V)

41

nC

VGS=

-10

V, VDS=-15V, I

=

-17

A

Total Gate Charge

AO4447A

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID =-250µA, V
V

=-30V, V

DS

V

= 0V, V

DS

V

DS =VGS ID

V

=-10V, V

GS

V

=-10V, ID =-17A

GS

V

=-4.5V, ID =-15A

GS

V

=-4V, ID =-13A

GS

V

=-5V, ID =-17A

DS

IS =-1A,V

GS

=-250µA

= 0V

GS

= 0V

GS

= 0V

GS

=±16V

=-5V

DS

-30 V

-1

TJ = 55°C -5

±10 µA

-0.8 -1.3 -1.6 V

-160 A

5.5 7

TJ=125°C 7 8.5

6.5 8

6.9 9
70 S

-0.62 -1 V

-3 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

110 160 210 Ω

4580 5500 pF

755 pF
564 pF

SWITCHING PARAMETERS

Qg (-10V) 87 105 nC
Qg (-4.5V) 41 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

J(MAX)

D

12.8 nC
17 nC

180 ns
VGS=-10V, VDS=-15V
RL=-0.9Ω, R

GEN

=3Ω

260 ns

1.2 µs

9.7 µs
IF=-17A, dI/dt=300A/µs
IF=-17A, dI/dt=300A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

32
77 nC

40 ns

#REF!

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

4

VGS=-10V

Normalized On

25°C

AO4447A

160
140

-4.5V

120
100

(A)

80

D

-I

60
40
20

0

0 1 2 3 4 5

Figure 1: On-Region Characteristics(Note E)

10

8

Ω

Ω)

Ω

Ω

(m

6

DS(ON)

R

4

-4V-10V

-VDS(Volts)

VGS=-4V

VGS=-4.5V

VGS=-10V

-3.5V

-3V

VGS= -2.5V

100

VDS=-5V

80

60

(A)

D

-I

40

20

0

0 1 2 3 4

Figure 2: Transfer Characteristics(Note E)

1.8

1.6

1.4

1.2

1.0

1.0

Normalized On-Resistance

125°C

25°C

-VGS(Volts)

VGS= -10V
ID= -17A

VGS= -4.5V
ID= -15A

2

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and

20

16

Ω

Ω)

12

Ω

Ω

(m

8

DS(ON)

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

R

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

4

0

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source

Gate Voltage(Note E)

-VGS(Volts)

Voltage(Note E)

IF=-6.5A, dI/dt=100A/µs

-ID(A)

ID= -17A

125°C

0.8
0 25 50 75 100 125 150

Figure 4: On-Resistance vs. Junction

1E+02

1E+01

1E+00

1E-01

(A)

S

I

1E-02

1E-03

1E-04

1E-05

0.0 0.2 0.4 0.6 0.8 1.0

Figure 6: Body-Diode Characteristics(Note E)

Temperature (°C)

Temperature(Note E)

125°C

25°C

-VSD(Volts)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

oss

10ms

1ms

100ms

DC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

DC

P

7000

AO4447A

10

VDS=-15V
ID= -17A

8

6

(Volts)

GS

4

-V

2

0

0 20 40 60 80 100

Qg(nC)

Figure 7: Gate-Charge Characteristics

1000

100

R

DS(ON)

limited

10

(Amps)

D

1

-I

0.1

0.1
T

=150°C

T

=150°C

J(Max)

J(Max)

TA=25°C

0.01

0.01 0.1 1 10 100

IF=-6.5A, dI/dt=100A/µs

-VDS(Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10µs

6000

C

5000

iss

4000

3000

Capacitance (pF)

2000

C

1000

C

rss

0

0 5 10 15 20 25 30

-VDS(Volts)

Figure 8: Capacitance Characteristics

10000

T

=150°C

J(Max)

TA=25°C

1000

100

Power (W)

10

10

1

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=75°C/W

θJA

1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

θ

Z

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Single Pulse

T

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

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VDC

AR

Rg

AO4447A

Gate Charge Test Circuit & Waveform

Vgs

Qg

-

-10V

-

+

Ig

Vgs

Vgs

Vds

Vds

VDC

+

DUT

Resistive Switching Test Circuit & Waveforms

RL

Vgs

-

DUT

VDC

Vdd

+

Qgs Qgd

t

on

t

t

d(on)

r

t

d(off)

Charge

t

off

t

f

90%

Vgs

Vgs

Vds +

Vds -

Ig

Rg

Vgs

Isd

Vgs

Vds

Id

DUT

Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

L

E = 1/2 LI

E = 1/2 LI

AR

2

2

AR

Vds

Vgs

VDC

-

Vdd

+

Id

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

rr

Vgs

t

L

+

Vdd

VDC

-

-Isd

-Vds

-I

F

dI/dt

rr

-I

RM

10%

BV

I

AR

Vdd

DSS

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