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AO4430, AO4430L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 1: June 2004
General Description
The AO4430 uses advanced trench technology to
provide excellent R
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
, shoot-through immunity,
DS(ON)
Features
VDS (V) = 30V
I
= 18A
D
R
R
< 5.5mΩ (VGS = 10V)
DS(ON)
< 7.5mΩ (VGS = 4.5V)
DS(ON)
conversion. AO4430L (Green Product) is offered in a
lead free package.
D
S
S
S
G
SOIC-8
Absolute Maximum Ratings T
D
D
D
D
=25°C unless otherwise noted
A
G
S
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
=25°C
B
T
A
T
A
T
A
T
A
=70°C
=25°C
=70°C
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
30
±20 V
18
15
80
3
2.1
-55 to 150
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
31 40
59 75
16 24
Symbol Ty
Max
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AO4430, AO4430L
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=250µA, VGS=0V
D
=24V, VGS=0V
V
DS
V
=0V, VGS= ±20V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
DS
I
=1A,VGS=0V
S
=250µA
=4.5V, VDS=5V
=10V, ID=18A
=4.5V, ID=15A
=5V, ID=18A
=55°C
T
J
=125°C
T
J
30 V
1
5
µA
100 nA
1 1.8 2.5 V
80 A
4.7 5.5
6.5 8
6.2 7.5
mΩ
m
82 S
0.7 1 V
4.5 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=15V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
6060 pF
638 pF
355 pF
0.45 Ω
SWITCHING PARAMETERS
(10V)
Q
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
(4.5V)
g
gs
gd
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=10V, VDS=15V, ID=18A
GS
=10V, VDS=15V, RL=0.83Ω,
V
GS
R
=3Ω
GEN
IF=18A, dI/dt=100A/µs
I
=18A, dI/dt=100A/µs
F
103 nC
48 nC
18 nC
15 nC
12 ns
8ns
51.5 ns
8.8 ns
33.5
ns
22 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
Page 3
AO4430, AO4430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
4.5V
3.5V
40
30
(A)
D
I
3.0V
20
10
VGS=2.5V
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
7.0
)
Ω
(m
DS(ON)
R
6.5
6.0
5.5
5.0
4.5
V
GS
=4.5V
VGS=10V
4.0
3.5
0 20406080100
I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
50
VDS=5V
40
125°C
(A)
30
D
I
20
10
0
1 1.5 2 2.5 3 3.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.6
ID=18A
VGS=4.5V
1.4
VGS=10V
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
25°C
16
)
Ω
(m
DS(ON)
R
12
8
ID=18A
4
0
246810
(Volts)
V
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
125°C
25°C
1.0E+02
1.0E+01
1.0E+00
1.0E-01
(A)
S
I
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Page 4
AO4430, AO4430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=15V
I
=18A
D
6
(Volts)
GS
4
V
2
0
0 20 40 60 80 100 120
Q
(nC)
g
Figure 7: Gate-Charge Characteristics
100.0
R
DS(ON)
limited
10.0
10ms
0.1s
100µs
1ms
1s
(Amps)
D
I
1.0
T
T
J(Max)
A
=150°C
=25°C
10s
DC
0.1
0.1 1 10 100
V
(Volts)
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10µs
8000
C
6000
iss
4000
Capacitance (pF)
2000
C
rss
C
oss
0
0 5 10 15 20 25 30
(Volts)
V
DS
Figure 8: Capacitance Characteristics
100
T
=150°C
J(Max)
T
=25°C
80
A
60
40
Power (W)
20
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T
/T
on
T
J,PK=TA+PDM.ZθJA.RθJA
R
=40°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
θJA
Z
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
Pulse Width (s)
D
T
on
T
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