Datasheet AO4425 Specification

Symbol

Symbol

Typ

Max

A

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

AO4425

V

D

D

D

D

S

S

S

G

38V P-Channel MOSFET

General Description

The AO4425 uses advanced trench technology to
provide excellent R

charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.

Top View Bottom View

, and ultra-low low gate

DS(ON)

SOIC-8

Product Summary

(V) = -38V

DS

ID = -14A (VGS = -20V)
R
R
ESD Rating: 4000V HBM

100% UIS Tested
100% Rg Tested

< 10mΩ (VGS = -20V)

DS(ON)

< 11mΩ (VGS = -10V)

DS(ON)

G

D

S

A

Maximum UnitsParameter

Drain-Source Voltage -38

Continuous Drain
Current

A

TA=25°C
TA=70°C

B

TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

±25Gate-Source Voltage

-14

-11

-50Pulsed Drain Current

3.1
2

-55 to 150

V
V

A

W
°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s
Steady-State
Steady-State

R

θJA

R

θJL

26 40
50 75
14 24

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4425

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body leakage current
Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V
VDS=-30V, VGS=0V

VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
VDS=V

GS ID

=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-14A

VGS=-10V, ID=-14A
VDS=-5V, ID=-14A
IS=-1A,VGS=0V

-38 V

-100

TJ=55°C -500

±1 µA

±10 µA

-2 -2.5 -3.5 V

-50 A

7.7 10

TJ=125°C 11 13.5

8.8 11 mΩ
43 S

0.71 1 V

4.2 A

nA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

3800 pF

560 pF
350 pF

7.5 Ω

SWITCHING PARAMETERS

Q
Q
Q
t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g
gs
gd

Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=-10V, VDS=-20V, ID=-14A

Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=-10V, VDS=-20V, RL=1.35Ω,
R

=3Ω

GEN

Turn-Off Fall Time
Body Diode Reverse Recovery Time

rr

Body Diode Reverse Recovery Charge

IF=-14A, dI/dt=100A/µs
IF=-14A, dI/dt=100A/µs

63 nC

14.1 nC

16.1 nC

12.4 ns

9.2 ns

97.5 ns

45.5 ns
35

ns

33 nC

A: The value of R
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.

Rev 3 : Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

-15

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

and lead to ambient.

θJL

-12.8

=25°C.

A

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4425

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-20V

-10V

125°C

25°C

VGS=-10V

VGS=-20V

30

25

20

-5V

-4.5V

(A)

15

D

-I

10

-4V

-3.5V

5

VGS=-3V

0

0 1 2 3 4 5

-VDS (Volts)

Fig 1: On-Region Characteristics

10

9

)

Ω

Ω

Ω

Ω

(m

8

DS(ON)

R

7

30

VDS=-5V

25

20

(A)

15

D

-I

10

125°C

25°C

5

0

2 2.5 3 3.5 4 4.5 5

-VGS(Volts)

Figure 2: Transfer Characteristics

1.6
VGS=-10V

1.4

ID = -14A

VGS=-20V

1.2

ID = -14A

1

Normalized On-Resistance

6

0 5 10 15 20 25 30

-ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

20

ID=-14A

15

)

Ω

Ω

Ω

Ω

(m

DS(ON)

R

10

125°C

5

4 8 12 16 20

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

-12.8

(A)

S

-I

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

-15

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04
25°C

1.0E-05

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0

-VSD (Volts)

Figure 6: Body-Diode Characteristics

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AO4425

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

C

rss

0.1s

DC

T

T

P

10

VDS=-15V
ID=-14A

8

6

(Volts)

GS

4

-V

2

0

0 10 20 30 40 50 60 70

-Qg (nC)

Figure 7: Gate-Charge Characteristics

100.0

R

DS(ON)

limited

10µs

100µs

1ms

10.0
10ms

(Amps)

D

-I

1.0

T

J(Max)

=150°C

1s

10s

TA=25°C

0.1

0.1 1 10 100

-VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=40°C/W

θJA

1

5000

4000

3000

2000

Capacitance (pF)

1000

C

0

0 10 20 30 40

Figure 8: Capacitance Characteristics

40

30

20

Power (W)

10

0

0.001 0.01 0.1 1 10 100 1000

Figure 10: Single Pulse Power Rating Junction-to-

-15

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

-12.8

oss

-VDS (Volts)

Pulse Width (s)

Ambient (Note E)

C

iss

T

J(Max)

TA=25°C

=150°C

0.1

Normalized Transient

Thermal Resistance

JA

θ

θ

θ

θ

Z

Single Pulse

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance

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Pulse Width (s)