
AO3413
Absolute Maximum Ratings T
=25°C unless otherwise noted
20V P-Channel MOSFET
General Description
General Description
The AO3413 uses advanced trench technology to 
The AO3413 uses advanced trench technology to 
provide excellent R
provide excellent R 
operation with gate voltages as low as 1.8V. This 
operation with gate voltages as low as 1.8V. This 
device is suitable for use as a load switch or in PWM 
device is suitable for use as a load switch or in PWM 
applications.   
applications.  
Top View        Bottom View 
Top View        Bottom View 
D
D
G
, low gate charge and 
, low gate charge and 
DS(ON)
DS(ON)
SOT23
SOT23
D
D
S
S
G
G
S
Features
Features
VDS= -20V
VDS= -20V 
ID= -3A                   (VGS= -4.5V)
ID= -3A          (VGS= -4.5V) 
R
R 
R
R 
R
R
< 80mΩ (VGS=- 4.5V)
< 80mΩ (VGS=- 4.5V)
DS(ON)
DS(ON)
< 100mΩ        (VGS= -2.5V)
< 100mΩ    (VGS= -2.5V)
DS(ON)
DS(ON)
< 130mΩ        (VGS= -1.8V)
< 130mΩ    (VGS= -1.8V)
DS(ON)
DS(ON)
G
G
D
D
S
S
-15
A
Drain-Source Voltage
Continuous Drain 
Current 
A
TA=25°C 
TA=70°C
Pulsed Drain Current 
TA=25°C
A
Power Dissipation 
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics 
Parameter
Maximum Junction-to-Ambient 
Maximum Junction-to-Ambient 
Maximum Junction-to-Lead 
C
t ≤ 10s 
Steady-State 
Steady-State
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
MaximumParameter Units
-20 
±8
V 
VGate-Source Voltage
-3
-2.4
A
-15
1.4
0.9
STG
W 
°C-55 to 150
Units
R
θJA
R
θJL
70 90
100 125
63 80
°C/W 
°C/W 
°C/W
     Rev 9: July 2010
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Page 1 of 5

Electrical Characteristics (TJ=25°C unless otherwise noted)
AO3413 
Symbol Min Typ Max Units
BV 
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage 
Zero Gate Voltage Drain Current 
Gate-Body leakage current
Gate Threshold Voltage 
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance 
Diode Forward Voltage 
Maximum Body-Diode Continuous Current
Parameter Conditions
ID=-250µA, VGS=0V 
VDS=-20V, VGS=0V
VDS=0V, VGS=±8V 
VDS=V
GS ID
VGS=-4.5V, VDS=-5V 
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2.6A 
VGS=-1.8V, ID=-1A 
VDS=-5V, ID=-3A 
IS=-1A,VGS=0V
=-250µA
-20 V
-1
TJ=55°C -5
±100 nA
-0.4 -0.65 -1 V
-15 A 
56 80
TJ=125°C 80 115
70 100 mΩ 
85 130 mΩ 
12 S
-0.7 -1 V
-1.4 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance 
Output Capacitance 
Reverse Transfer Capacitance 
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
560 745 pF
80 pF 
70 pF 
15 23 Ω
SWITCHING PARAMETERS
Q 
Q 
Q 
t
D(on)
g 
gs 
gd
Total Gate Charge 
Gate Source Charge 
Gate Drain Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Turn-On DelayTime
8.5 11 nC
1.2 nC
2.1 nC
7.2 ns
R
t
D(off)
t
f
t
rr
Q
rr
A: The value of R 
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. 
B: Repetitive rating, pulse width limited by junction temperature. 
C. The R 
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. 
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA 
curve provides a single pulse rating. 
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime 
Turn-Off Fall Time
Body Diode Reverse Recovery Time 
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The 
θJA
is the sum of the thermal impedence from junction to lead R
θJA
=6Ω
GEN
IF=-3A, dI/dt=100A/µs 
IF=-3A, dI/dt=100A/µs
and lead to ambient.
θJL
12
53 ns 
56 ns 
37 49
27
ns
nC
     Rev 9: July 2010
     Rev 9: July 2010
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Page 2 of 5
Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
-4.5V
-4.5V
20
20
15
15
(A)
-2.0V
(A)
(A)
D
D
-I
-I
10
10
5
5
-2.0V
VGS=-1.5V
VGS=-1.5V
(A)
D
D
-I
-I
20
20
15
15
10
10
5
5
VDS=-5V
VDS=-5V
-15
125°C
125°C
25°C
25°C
AO3413 
0
0
0 1 2 3 4 5
0 1 2 3 4 5
-VDS(Volts)
Figure 1: On-Region Characteristics
Figure 1: On-Region Characteristics
150
150
130
130
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
110
110
(m
(m
90
90
DS(ON)
DS(ON)
R
R
70
70
50
50
0 2 4 6 8 10
Figure 3: On-Resistance vs. Drain Current and 
180 
160 
140
Ω
Ω)
Ω
Ω
120
(m
100
DS(ON)
R
80 
60
25°C
40
0 2 4 6 8
Figure 5: On-Resistance vs. Gate-Source Voltage
-VDS(Volts)
VGS=-1.8V
VGS=-1.8V
-ID(A)
Gate Voltage
-VGS(Volts)
VGS=-2.5V
VGS=-2.5V
VGS=-4.5V
VGS=-4.5V
125°C
ID=-3A
0
0
0 0.5 1 1.5 2 2.5 3
0 0.5 1 1.5 2 2.5 3
-VGS(Volts)
Figure 2: Transfer Characteristics
Figure 2: Transfer Characteristics
1.6
1.6
1.4
1.4
1.2
1.2
1
1
Normalized On-Resistance
Normalized On-Resistance
0.8
0.8 
0 25 50 75 100 125 150 175
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1E+01
12
1E+00
1E-01
(A)
S
-I
1E-02
1E-03
1E-04
1E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6: Body-Diode Characteristics
-VGS(Volts)
VGS=-2.5V
VGS=-2.5V 
ID=-2.6A
ID=-2.6A
Temperature (°C)
25°C
-VSD(Volts)
VGS=-1.8V
VGS=-1.8V 
ID=-1A
ID=-1A
VGS=-4.5V
VGS=-4.5V 
ID=-3A
ID=-3A
     Rev 9: July 2010
     Rev 9: July 2010
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Page 3 of 5
Page 3 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
5
VDS=-10V
VDS=-10V 
ID=-3A
ID=-3A
4
4
3
3
(Volts)
(Volts)
GS
GS
2
2
-V
-V
1
1
0
0
0 2 4 6 8 10
0 2 4 6 8 10
Qg(nC)
Qg(nC)
100.00
100.00
10.00
10.00
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
R
R
DS(ON) 
DS(ON) 
limited
limited
1400
1400 
1200
1200 
1000
1000
Capacitance (pF)
Capacitance (pF)
1000
1000
100
100
800
800 
600
600 
400
400 
200
200
0
0
0 5 10 15 20
0 5 10 15 20
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
-15
C
C
-VDS(Volts)
-VDS(Volts)
T
=150°C
T
=150°C
J(Max)
J(Max)
TA=25°C
TA=25°C
AO3413 
1.00
1.00
(Amps)
(Amps)
D
D
-I
-I
T
=150°C
T
=150°C
J(Max)
0.10
0.10
0.01
0.01
J(Max)
TA=25°C
TA=25°C
0.1 1 10 100
-VDS(Volts)
Figure 9: Maximum Forward Biased Safe 
Operating Area (Note E)
10
D=Ton/T 
T
J,PK=TA+PDM.ZθJA.RθJA
R
=125°C/W
θJA
1
In descending order 
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Normalized Transient 
Thermal Resistance
0.01
θ
θJA
θ
θ
Z
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1ms
1ms
10
10
Power (W)
Power (W)
0.1
0.1
Pulse Width (s)
1
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
12
T
T
     Rev 9: July 2010
     Rev 9: July 2010
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Page 4 of 5
Page 4 of 5

AO3413 
Gate Charge Test Circuit & Waveform
Gate Charge Test Circuit & Waveform
Vgs
Vgs
Qg
Qg
-
VDC
VDC
Rg
Rg
-
-
+
+
DUT
DUT
Vgs
Vgs
Ig
Ig
RL
RL
Vds
Vds
DUT
Vgs
Vgs
DUT
-
Vds
Vds
VDC
VDC
+
+
Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
-
-
Vdd
Vdd
VDC
VDC
+
+
Vgs
Vgs
-10V
-10V
Qgs Qgd
Qgs Qgd
t
t
on
on
t
t
t
t
d(on)
d(on)
r
r
t
t
d(off)
d(o ff)
Charge
Charge
t
t
off
off
t
t
f
f
90%
90%
Vgs
Vgs
Vds +
Vds +
Vds -
Ig
Vgs
Isd
DUT
DUT
Vds
Vds
Diode Recovery Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Vgs
L
+
Vdd
VDC
-
-Isd
-Vds
Q  = -  Idt
Q  = -  Idt
rr
rr
-I
F
dI/dt
10%
10%
t
rr
-I
RM
Vdd
     Rev 9: July 2010
     Rev 9: July 2010
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