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AO3413
Symbol
Symbol
Typ
Max
B
A
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
20V P-Channel MOSFET
General Description
General Description
The AO3413 uses advanced trench technology to
The AO3413 uses advanced trench technology to
provide excellent R
provide excellent R
operation with gate voltages as low as 1.8V. This
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
device is suitable for use as a load switch or in PWM
applications.
applications.
Top View Bottom View
Top View Bottom View
D
D
G
, low gate charge and
, low gate charge and
DS(ON)
DS(ON)
SOT23
SOT23
D
D
S
S
G
G
S
Features
Features
VDS= -20V
VDS= -20V
ID= -3A (VGS= -4.5V)
ID= -3A (VGS= -4.5V)
R
R
R
R
R
R
< 80mΩ (VGS=- 4.5V)
< 80mΩ (VGS=- 4.5V)
DS(ON)
DS(ON)
< 100mΩ (VGS= -2.5V)
< 100mΩ (VGS= -2.5V)
DS(ON)
DS(ON)
< 130mΩ (VGS= -1.8V)
< 130mΩ (VGS= -1.8V)
DS(ON)
DS(ON)
G
G
D
D
S
S
-15
A
Drain-Source Voltage
Continuous Drain
Current
A
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
A
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
MaximumParameter Units
-20
±8
V
VGate-Source Voltage
-3
-2.4
A
-15
1.4
0.9
STG
W
°C-55 to 150
Units
R
θJA
R
θJL
70 90
100 125
63 80
°C/W
°C/W
°C/W
Rev 9: July 2010
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t36ns
Turn-On Rise Time
V
=-4.5V, V
=-10V, R
=3.3Ω,
tr36
ns
Turn-On Rise Time
VGS=-4.5V, V
DS
=-10V, R
L
=3.3Ω,
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO3413
Symbol Min Typ Max Units
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Parameter Conditions
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=0V, VGS=±8V
VDS=V
GS ID
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2.6A
VGS=-1.8V, ID=-1A
VDS=-5V, ID=-3A
IS=-1A,VGS=0V
=-250µA
-20 V
-1
TJ=55°C -5
±100 nA
-0.4 -0.65 -1 V
-15 A
56 80
TJ=125°C 80 115
70 100 mΩ
85 130 mΩ
12 S
-0.7 -1 V
-1.4 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
560 745 pF
80 pF
70 pF
15 23 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Turn-On DelayTime
8.5 11 nC
1.2 nC
2.1 nC
7.2 ns
R
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
θJA
=6Ω
GEN
IF=-3A, dI/dt=100A/µs
IF=-3A, dI/dt=100A/µs
and lead to ambient.
θJL
12
53 ns
56 ns
37 49
27
ns
nC
Rev 9: July 2010
Rev 9: July 2010
www.aosmd.com
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-
2.5V
-
3.0V
-
2.5V
-
3.0V
125°C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
-4.5V
-4.5V
20
20
15
15
(A)
-2.0V
(A)
(A)
D
D
-I
-I
10
10
5
5
-2.0V
VGS=-1.5V
VGS=-1.5V
(A)
D
D
-I
-I
20
20
15
15
10
10
5
5
VDS=-5V
VDS=-5V
-15
125°C
125°C
25°C
25°C
AO3413
0
0
0 1 2 3 4 5
0 1 2 3 4 5
-VDS(Volts)
Figure 1: On-Region Characteristics
Figure 1: On-Region Characteristics
150
150
130
130
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
110
110
(m
(m
90
90
DS(ON)
DS(ON)
R
R
70
70
50
50
0 2 4 6 8 10
Figure 3: On-Resistance vs. Drain Current and
180
160
140
Ω
Ω)
Ω
Ω
120
(m
100
DS(ON)
R
80
60
25°C
40
0 2 4 6 8
Figure 5: On-Resistance vs. Gate-Source Voltage
-VDS(Volts)
VGS=-1.8V
VGS=-1.8V
-ID(A)
Gate Voltage
-VGS(Volts)
VGS=-2.5V
VGS=-2.5V
VGS=-4.5V
VGS=-4.5V
125°C
ID=-3A
0
0
0 0.5 1 1.5 2 2.5 3
0 0.5 1 1.5 2 2.5 3
-VGS(Volts)
Figure 2: Transfer Characteristics
Figure 2: Transfer Characteristics
1.6
1.6
1.4
1.4
1.2
1.2
1
1
Normalized On-Resistance
Normalized On-Resistance
0.8
0.8
0 25 50 75 100 125 150 175
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1E+01
12
1E+00
1E-01
(A)
S
-I
1E-02
1E-03
1E-04
1E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6: Body-Diode Characteristics
-VGS(Volts)
VGS=-2.5V
VGS=-2.5V
ID=-2.6A
ID=-2.6A
Temperature (°C)
25°C
-VSD(Volts)
VGS=-1.8V
VGS=-1.8V
ID=-1A
ID=-1A
VGS=-4.5V
VGS=-4.5V
ID=-3A
ID=-3A
Rev 9: July 2010
Rev 9: July 2010
www.aosmd.com
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iss
C
C
10µs
10ms
0.1s
DC
100µs
1s
iss
C
C
on
P
10µs
10ms
0.1s
DC
100µs
1s
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
5
VDS=-10V
VDS=-10V
ID=-3A
ID=-3A
4
4
3
3
(Volts)
(Volts)
GS
GS
2
2
-V
-V
1
1
0
0
0 2 4 6 8 10
0 2 4 6 8 10
Qg(nC)
Qg(nC)
100.00
100.00
10.00
10.00
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
R
R
DS(ON)
DS(ON)
limited
limited
1400
1400
1200
1200
1000
1000
Capacitance (pF)
Capacitance (pF)
1000
1000
100
100
800
800
600
600
400
400
200
200
0
0
0 5 10 15 20
0 5 10 15 20
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
-15
C
C
-VDS(Volts)
-VDS(Volts)
T
=150°C
T
=150°C
J(Max)
J(Max)
TA=25°C
TA=25°C
AO3413
1.00
1.00
(Amps)
(Amps)
D
D
-I
-I
T
=150°C
T
=150°C
J(Max)
0.10
0.10
0.01
0.01
J(Max)
TA=25°C
TA=25°C
0.1 1 10 100
-VDS(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=125°C/W
θJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Normalized Transient
Thermal Resistance
0.01
θ
θJA
θ
θ
Z
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1ms
1ms
10
10
Power (W)
Power (W)
0.1
0.1
Pulse Width (s)
1
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
12
T
T
Rev 9: July 2010
Rev 9: July 2010
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Page 4 of 5
Page 4 of 5
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AO3413
Gate Charge Test Circuit & Waveform
Gate Charge Test Circuit & Waveform
Vgs
Vgs
Qg
Qg
-
VDC
VDC
Rg
Rg
-
-
+
+
DUT
DUT
Vgs
Vgs
Ig
Ig
RL
RL
Vds
Vds
DUT
Vgs
Vgs
DUT
-
Vds
Vds
VDC
VDC
+
+
Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
-
-
Vdd
Vdd
VDC
VDC
+
+
Vgs
Vgs
-10V
-10V
Qgs Qgd
Qgs Qgd
t
t
on
on
t
t
t
t
d(on)
d(on)
r
r
t
t
d(off)
d(o ff)
Charge
Charge
t
t
off
off
t
t
f
f
90%
90%
Vgs
Vgs
Vds +
Vds +
Vds -
Ig
Vgs
Isd
DUT
DUT
Vds
Vds
Diode Recovery Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Vgs
L
+
Vdd
VDC
-
-Isd
-Vds
Q = - Idt
Q = - Idt
rr
rr
-I
F
dI/dt
10%
10%
t
rr
-I
RM
Vdd
Rev 9: July 2010
Rev 9: July 2010
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