Datasheet AO3413L Datasheet (Alpha & Omega)

AO3413

Symbol

Typ

Max

B

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

20V P-Channel MOSFET

General Description

The AO3413 uses advanced trench technology to

The AO3413 uses advanced trench technology to provide excellent R

provide excellent R operation with gate voltages as low as 1.8V. This

operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

device is suitable for use as a load switch or in PWM applications.

applications.

Top View Bottom View

D

G

, low gate charge and

DS(ON)

SOT23

D

S

G

S

Features

VDS= -20V

VDS= -20V ID= -3A (VGS= -4.5V)

ID= -3A (VGS= -4.5V) R

R R

R

< 80mΩ (VGS=- 4.5V)

DS(ON)

< 100mΩ (VGS= -2.5V)

DS(ON)

< 130mΩ (VGS= -1.8V)

DS(ON)

G

D

S

-15

A

Drain-Source Voltage

Continuous Drain Current

A

TA=25°C TA=70°C

Pulsed Drain Current

TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

Thermal Characteristics Parameter

Maximum Junction-to-Ambient Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s Steady-State Steady-State

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

MaximumParameter Units

-20 ±8

V VGate-Source Voltage

-3

-2.4

A

-15

1.4

0.9

STG

W °C-55 to 150

Units

R

θJA

R

θJL

70 90

100 125

63 80

°C/W °C/W °C/W

Rev 9: July 2010

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Page 1 of 5

t36ns

Turn-On Rise Time

V

=-4.5V, V

=-10V, R

=3.3Ω,

tr36

ns

Turn-On Rise Time

VGS=-4.5V, V

DS

=-10V, R

L

=3.3Ω,

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3413

Symbol Min Typ Max Units

BV I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current

Gate Threshold Voltage On state drain current

Static Drain-Source On-Resistance

Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current

Parameter Conditions

ID=-250µA, VGS=0V VDS=-20V, VGS=0V

VDS=0V, VGS=±8V VDS=V

GS ID

VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A

VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A IS=-1A,VGS=0V

=-250µA

-20 V

-1

TJ=55°C -5

±100 nA

-0.4 -0.65 -1 V

-15 A 56 80

TJ=125°C 80 115

70 100 mΩ 85 130 mΩ 12 S

-0.7 -1 V

-1.4 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

560 745 pF

80 pF 70 pF 15 23 Ω

SWITCHING PARAMETERS

Q Q Q t

D(on)

g gs gd

Total Gate Charge Gate Source Charge Gate Drain Charge

VGS=-4.5V, VDS=-10V, ID=-3A

Turn-On DelayTime

8.5 11 nC

1.2 nC

2.1 nC

7.2 ns

R

t

D(off)

t

f

t

rr

Q

rr

A: The value of R value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off DelayTime Turn-Off Fall Time

Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The

θJA

is the sum of the thermal impedence from junction to lead R

θJA

=6Ω

GEN

IF=-3A, dI/dt=100A/µs IF=-3A, dI/dt=100A/µs

and lead to ambient.

θJL

12

53 ns 56 ns 37 49

27

ns

nC

Rev 9: July 2010

www.aosmd.com

Page 2 of 5

-

2.5V

-

3.0V

-

2.5V

-

3.0V

125°C

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

-4.5V

20

15

(A)

-2.0V

(A)

D

-I

10

5

-2.0V

VGS=-1.5V

(A)

D

-I

20

15

10

5

VDS=-5V

-15

125°C

25°C

AO3413

0

0 1 2 3 4 5

-VDS(Volts)

Figure 1: On-Region Characteristics

150

130

Ω

Ω)

Ω

Ω)

Ω

110

(m

90

DS(ON)

R

70

50

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and

180 160 140

Ω

Ω)

Ω

120

(m

100

DS(ON)

R

80 60

25°C

40

0 2 4 6 8

Figure 5: On-Resistance vs. Gate-Source Voltage

-VDS(Volts)

VGS=-1.8V

-ID(A)

Gate Voltage

-VGS(Volts)

VGS=-2.5V

VGS=-4.5V

125°C

ID=-3A

0

0 0.5 1 1.5 2 2.5 3

-VGS(Volts)

Figure 2: Transfer Characteristics

1.6

1.4

1.2

1

Normalized On-Resistance

0.8

0.8 0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

1E+02

1E+01

12

1E+00

1E-01

(A)

S

-I

1E-02

1E-03

1E-04

1E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics

-VGS(Volts)

VGS=-2.5V

VGS=-2.5V ID=-2.6A

ID=-2.6A

Temperature (°C)

25°C

-VSD(Volts)

VGS=-1.8V

VGS=-1.8V ID=-1A

ID=-1A

VGS=-4.5V

VGS=-4.5V ID=-3A

ID=-3A

Rev 9: July 2010

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Page 3 of 5

iss

C

10µs

10ms

0.1s

DC

100µs

1s

iss

C

on

P

10µs

10ms

0.1s

DC

100µs

1s

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5

VDS=-10V

VDS=-10V ID=-3A

ID=-3A

4

3

(Volts)

GS

2

-V

1

0

0 2 4 6 8 10

Qg(nC)

100.00

10.00

Figure 7: Gate-Charge Characteristics

R

DS(ON)

limited

1400

1400 1200

1200 1000

1000

Capacitance (pF)

1000

100

800

800 600

600 400

400 200

200

0

0 5 10 15 20

Figure 8: Capacitance Characteristics

-15

C

-VDS(Volts)

T

=150°C

T

=150°C

J(Max)

TA=25°C

AO3413

1.00

(Amps)

D

-I

T

=150°C

T

=150°C

J(Max)

0.10

0.01

J(Max)

TA=25°C

0.1 1 10 100

-VDS(Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

D=Ton/T T

J,PK=TA+PDM.ZθJA.RθJA

R

=125°C/W

θJA

1

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

Normalized Transient

Thermal Resistance

0.01

θ

θJA

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

1ms

10

Power (W)

0.1

Pulse Width (s)

1

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note E)

12

T

Rev 9: July 2010

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Page 4 of 5

AO3413

Gate Charge Test Circuit & Waveform

Vgs

Qg

-

VDC

Rg

-

+

DUT

Vgs

Ig

RL

Vds

DUT

Vgs

DUT

-

Vds

VDC

+

Resistive Switching Test Circuit & Waveforms

-

Vdd

VDC

+

Vgs

-10V

Qgs Qgd

t

on

t

d(on)

r

t

d(off)

d(o ff)

Charge

t

off

t

f

90%

Vgs

Vds +

Vds -

Ig

Vgs

Isd

DUT

Vds

Diode Recovery Test Circuit & Waveforms

Vgs

L

+

Vdd

VDC

-

-Isd

-Vds

Q = - Idt

rr

-I

F

dI/dt

10%

t

rr

-I

RM

Vdd

Rev 9: July 2010

www.aosmd.com Page 5 of 5

Datasheet AO3413L Datasheet (Alpha & Omega) [ru]