Page 1
General Description Product Summary
V
Symbol
Absolute Maximum Ratings T
=25°C unless otherwise noted
DS
A D
A
AO3407A
30V P-Channel MOSFET
The AO3407A uses advanced trench technology to
provide excellent R
with low gate charge. This
DS(ON)
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View Bottom View
Top View Bottom View
D
D
SOT23
D
D
S
S
S
G
G
A
S
G
G
DS
ID (at VGS=-10V) -4.3A
R
R
(at VGS=-10V) < 48mΩ
DS(ON)
(at VGS =-4.5V) < 78mΩ
DS(ON)
G
G
Maximum UnitsParameter
Drain-Source Voltage -30
Continuous Drain
Current
Pulsed Drain Current
TA=25°C
TA=70°C
C
TA=25°C
B
Power Dissipation
TA=70°C
Junction and Storage Temperature Range -55 to 150
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
-4.3
-3.5
-25
1.4
0.9
STG
-30V
D
D
S
S
V
V±20Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Typ Max Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
70
100
63
90
125
80
°C/W
°C/W
°C/W
www.aosmd.com Page 1 of 5
Page 2
tr5.5
ns
Turn-On Rise Time
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO3407A
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=-250µA, VGS=0V
-30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
VDS=0V, VGS= ±20V
VDS=V
GS ID
=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4.3A
-1.4 -1.9 -2.4 V
-25 A
±100 nA
34 48
TJ=125°C 52 68
VGS=-4.5V, ID=-3A
VDS=-5V, ID=-4.3A
IS=-1A,VGS=0V
54 78 mΩ
10 S
-0.7 -1 V
µA
mΩ
-2 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3.5 7.5 11.5 Ω
520 pF
100 pF
65 pF
SWITCHING PARAMETERS
Qg(10V) 9.2 11 nC
Qg(4.5V) 4.6 6 nC
Q
gs
Q
gd
t
D(on)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=-10V, VDS=-15V, ID=-4.3A
1.6 nC
2.2 nC
7.5 ns
VGS=-10V, VDS=-15V, RL=3.5Ω,
R
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
GEN
=3Ω
19 ns
7 ns
IF=-4.3A, dI/dt=100A/µs
IF=-4.3A, dI/dt=100A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
=150°C. The SOA curve provides a single pulse rating.
J(MAX)
11 ns
5.3
nC
Rev 5: Nov 2011 www.aosmd.com Page 2 of 5
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Page 3
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-
6V
-
6V
30
30
25
25
-10V
-10V
20
20
(A)
(A)
15
15
D
D
-I
-I
10
10
5
5
0
0
0 1 2 3 4 5
0 1 2 3 4 5
-VDS(Volts)
Fig 1: On-Region Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
80
80
70
70
60
60
Ω
Ω)
Ω
Ω)
Ω
Ω
Ω
Ω
50
50
(m
(m
40
40
DS(ON)
DS(ON)
R
R
30
30
20
20
10
10
0 2 4 6 8 10
0 2 4 6 8 10
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 3: On-Resistance vs. Drain Current and Gate
-VDS(Volts)
VGS=-4.5V
VGS=-4.5V
VGS=-10V
VGS=-10V
-ID(A)
-ID(A)
Voltage (Note E)
Voltage (Note E)
VGS=-3.5V
VGS=-3.5V
-4.5V
-4.5V
-4V
-4V
30
30
VDS=-5V
VDS=-5V
25
25
20
20
(A)
(A)
15
15
D
D
-I
-I
10
10
5
5
0
0
0.5 1.5 2.5 3.5 4.5 5.5
0.5 1.5 2.5 3.5 4.5 5.5
Figure 2: Transfer Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1
1
Normalized On-Resistance
Normalized On-Resistance
0.8
0.8
0 25 50 75 100 125 150 175
0 25 50 75 100 125 150 175
Figure 4: On-Resistance vs. Junction Temperature
Figure 4: On-Resistance vs. Junction Temperature
VGS=-10V
VGS=-10V
ID=-4.3A
ID=-4.3A
125°C
125°C
-VGS(Volts)
-VGS(Volts)
Temperature (°C)
Temperature (°C)
(Note E)
(Note E)
25°C
25°C
VGS=-4.5V
VGS=-4.5V
ID=-3A
ID=-3A
AO3407A
17
5
2
10
0
18
120
100
80
Ω
Ω)
Ω
Ω
(m
60
DS(ON)
R
40
20
2 4 6 8 10
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
-VGS(Volts)
(Note E)
ID=-4.3A
1.0E+02
1.0E+01
1.0E+00
1.0E-01
(A)
S
-I
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6: Body-Diode Characteristics (Note E)
-VSD(Volts)
Rev 5: Nov 2011 www.aosmd.com Page 3 of 5
Page 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
C
Operating Area (Note F)
10µs
10s
1ms
100µs
C
10µs
10s
1ms
100µs
T
P
on
P
AO3407A
10
10
VDS=-15V
VDS=-15V
ID=-4.3A
ID=-4.3A
8
8
6
6
(Volts)
(Volts)
GS
GS
4
4
-V
-V
2
2
0
0
0 2 4 6 8 10
0 2 4 6 8 10
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
100.0
100.0
10.0
10.0
R
R
DS(ON)
DS(ON)
limited
limited
1.0
1.0
(Amps)
(Amps)
D
D
I
I
0.1
0.1
0.0
0.0
T
T
J(Max)
J(Max)
TA=25°C
TA=25°C
0.01 0.1 1 10 100
0.01 0.1 1 10 100
Figure 9: Maximum Forward Biased Safe
Figure 9: Maximum Forward Biased Safe
Qg(nC)
Qg(nC)
=150°C
=150°C
VDS(Volts)
VDS(Volts)
Operating Area (Note F)
10ms
10ms
10ms
10ms
800
800
C
600
600
400
400
C
C
oss
Capacitance (pF)
Capacitance (pF)
200
200
0
0
0 5 10 15 20 25 30
0 5 10 15 20 25 30
40
40
30
30
20
20
Power (W)
Power (W)
10
10
0
0
0.0001 0.01 1 100
0.0001 0.01 1 100
oss
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
Figure 10: Single Pulse Power Rating Junction-to-
Figure 10: Single Pulse Power Rating Junction-to-
C
iss
iss
-VDS(Volts)
-VDS(Volts)
Pulse Width (s)
Pulse Width (s)
Ambient (Note F)
Ambient (Note F)
TA=25°C
TA=25°C
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
1
R
=125°C/W
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Normalized Transient
Thermal Resistance
0.01
θ
θJA
θ
θ
Z
Single Pulse
T
T
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Pulse Width (s)
Rev 5: Nov 2011 www.aosmd.com Page 4 of 5
Page 5
VDC
VDC
Rg
Rg
AO3407A
Gate Charge Test Circuit & Waveform
Gate Charge Test Circuit & Waveform
Vgs
Vgs
Qg
Qg
-
-
-
+
+
DUT
DUT
Vgs
Vgs
Ig
Ig
RL
RL
Vds
Vds
DUT
Vgs
Vgs
DUT
-
Vds
Vds
VDC
VDC
+
+
Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
-
-
Vdd
Vdd
VDC
VDC
+
+
Vgs
Vgs
-10V
-10V
t t
t t
d(on)
d(on)
Qgd
Qgs
Qgs
t
t
on
on
r
r
Qgd
Charge
Charge
t
t
off
off
t
t
t
t
d(off)
d(off)
f
f
90%
90%
Vgs
Vgs
Vds +
Vds +
Vds -
10%
10%
Vds
Vds
Diode Recovery Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Q = - Idt
Q = - Idt
rr
DUT
DUT
Isd
Vgs
Ig
L
+
Vdd
VDC
-
Vgs
Vgs
-Isd
-Vds
rr
t
t
rr
-I
F
dI/dt
rr
-I
RM
Vdd
Rev 5: Nov 2011
www.aosmd.com
Page 5 of 5
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