The AN9D, AN9E and AN9F series are master slice ICs of bipolar process, which enables you to integrate an analog
circuit easily onto a single chip. A custom IC can be made by placing a wired pattern designed in line with the customer's
analog circuit onto a master slice.
Starting from a wafer on which a most part of IC diffusion processes are already finished, you can shorten an IC pilot
fabrication considerably. Further, placement of elements and inter-element wiring are done automatically by a computer, which results in short period of pattern designing and thereby developing a custom IC in a short period.
■ Features
• High design flexibility
• Easy circuit constant design because of setting resistance or capacitance to an arbitrary value.
• Free setting of contacts between a substrate and GND wiring prevents from operation error to be caused by floating
of substrate potential.
• Usable for multi power source because a resistor island potential can be set for each unit.
• Builds in a lateral type PNP transistor of high reverse breakdown voltage between base and emitter, or a collector
wall type NPN transistor of excellent saturation characteristics. (AN9DA00, AN9DB00, AN9DF00)
• Short development period
• Due to a full automatic layout design, a sample is available in one month from a completion of a circuit diagram.
• Applicable to a small quantity production item
• Possible to develop a custom IC for small quantity production due to a low development cost.
■ Development Flow
Matsushita side
Customer side
System design
Full automatic
layout
Circuit design
Mask layout
EWS
Fabricated wafer
Check
Test specification, etc.
for small quantity production
Full
custom
Master
slice
1week 3weeks
Wiring, assembly
Wired mask only
Drastic shrinkage of TAT
Layout
8weeks
1 000 elements in case
of general-use process
Diffusion,
assembly
6weeks
Selection
ChipEvaluation
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AN9D, AN9E, AN9F SeriesAnalog Master Slice
■ Product Mix
Series name
Supply
voltage
f
T(max)
AN9D series to 12 V 2.6 GHz14.4 V 100 to 250 1.0 GHz14.4 V66 to 200 For low power dissipation/
AN9E series
to 12 V 3.5 GHz14.4 V80 to 250 1.5 GHz14.4 V50 to 130 For Bi-CMOS IC
AN9F series to 30 V 300 MHz30 V80 to 250 9 MHz30 V80 to 350 For high breakdown
• Constant-variable resistor and capacitor elements built in
• Large current transistor built in (AN9DA00, AN9DB00, AN9DF00)
• Optimal for a control-system application due to built-in collector wall type NPN transistors and lateral PNP transistors (AN9DA00, AN9DB00, AN9DF00)
• Optimal for signal processing application due to built-in high speed NPN transistors and vertical PNP transistors
(AN9DC00, AN9DD00, AN9DE00)