Page 1
查询AN80xx Series供应商
Voltage Regulators
AN80xx/AN80xxM Series
3-pin, positive output, low dropout voltage regulator (50 mA type)
■ Overview
The AN80xx series and the AN80xxM series are 3pin, low dropout, fixed positive output type monolithic
voltage regulators. Since their power consumption can
be minimized, they are suitable for battery-used power
supply and reference voltage. 13 types of output voltage
are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only),
4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.
■ Features
• Input/output voltage difference: 0.3V max.
• Output current of up to 50mA
• Low bias current: 0.6mA typ.
• Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000
only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V
• Built-in overcurrent protection circuit
AN80xx series Unit: mm
0.6±0.15
5.0±0.2
(1.0)(1.0)
+0.1
0.43
–0.05
2.54
213
SSIP003-P-0000
5.1±0.213.5±0.5
4.0±0.2
0.43
2.3±0.2
+0.1
–0.05
1: Input
2: Output
3: GND
AN80xxM series Unit: mm
4.6 max.
1.8 max.
2.6
45°
2.6 max.
4.25 max.
1.6 max.
■ Block Diagram (AN80xxM series)
Starter
V
I
0.48 max.
0.58 max.
1.5
3.0
123
0.8 min.
HSIP003-P-0000B
Voltage
Reference
3
(1)
C
+
Error
Amp.
−
Current
Limiter
2
(3)
IN
1
−
+
(2)
C
OUT
R
2
R
1
R1 = 5kΩ
= 0.33µF
C
IN
= 10µF
C
V
O
OUT
Note) The number in ( ) shows the pin number for the AN80xx series.
0.44 max.
1: Output
2: GND
3: Input
Publication date: August 2001 SFF00007AEB
1
Page 2
AN80xx/AN80xxM Series
■ Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Rating
Supply voltage
Supply current
Power dissipation
Operating ambient temperature
Storage temperature
*
AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm
■ Electrical Characteristics at T
AN80xx series
AN80xxM series
= 25°C
a
V
I
I
CC
P
D
T
opr
T
stg
20
100
*
650
−30 to +80
−55 to +150
−55 to +125
2
or more).
Unit
V
mA
mW
°C
°C
• AN8002, AN8002M (2V type)
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
V
REG
REG
V
DIF(min)
I
Bias
RR
V
∆VO/T
T
= 25°C
O
no
j
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
I
= 0mA, Tj = 25°C
O
V
I
f = 10Hz to 100kHz
Tj = −30 to +125°C
a
= 1.9V, IO = 20mA, Tj = 25°C
= 1.9V, IO = 50mA, Tj = 25°C
= 3 to 5V, f = 120Hz
1.92
62
2.08 V2
2
7
10
0.12
74
60
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 3V, IO = 20mA and CO = 10µF.
I
Unit
40
mVVI = 2.5 to 8V, Tj = 25°C
20 mV
mV
25
0.2
0.3
1
mA0.6
mV/°C0.1
V0.06
V
dB
µV
•
AN8025, AN8025M (2.5V type)
2.62.5
50
20
25
0.2
0.3
Unit
V
mV
mV
mV
V
V
1
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
T
V
O
Bias
no
= 25°C
j
V
= 3 to 8.5V, Tj = 25°C
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
= 2.4V, IO = 20mA, Tj = 25°C
V
I
= 2.4V, IO = 50mA, Tj = 25°C
V
I
I
= 0mA, Tj = 25°C
O
= 3.5 to 5.5V, f = 120Hz
V
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
2.4
60
2.5
8
12.5
0.07
0.12
0.6
72
65
0.13
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 3.5V, IO = 20mA and CO = 10µF.
I
2
SFF00007AEB
Page 3
AN80xx/AN80xxM Series
yp
■ Electrical Characteristics at Ta = 25°C (continued)
•
AN8003, AN8003M (3V type)
50
25
30
0.2
0.3
50
30
40
0.2
0.3
Unit
V
mV
mV
mV
V
V
1
mAI
dBRR
µVV
mV/°C∆VO/T
Unit
V
mV
mV
mV
V
V
1
1
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
= −30 to +125°C
T
j
a
= 3.5 to 9V, Tj = 25°C
= 2.9V, IO = 20mA, Tj = 25°C
= 2.9V, IO = 50mA, Tj = 25°C
= 4 to 6V, f = 120Hz
2.88
58
3.123
3
9
15
0.07
0.12
0.6
70
70
0.15
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
•
AN8035(3.5V type)
= 4V, IO = 20mA and CO = 10µF.
I
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
= 4 to 9.5V, Tj = 25°C
= 3.4V, IO = 20mA, Tj = 25°C
= 3.4V, IO = 50mA, Tj = 25°C
= 4.5 to 6.5V, f = 120Hz
3.36
57
3.643.5
3.5
10
20
0.07
0.12
0.6
69
75
0.2
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 4.5V, IO = 20mA and CO = 10µF.
I
•
AN8004, AN8004M (4V type)
50
30
40
0.2
0.3
Unit
V
mV
mV
mV
V
V
1
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
T
V
O
Bias
no
= 25°C
j
V
= 4.5 to 10V, Tj = 25°C
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
= 3.8V, IO = 20mA, Tj = 25°C
V
I
= 3.8V, IO = 50mA, Tj = 25°C
V
I
= 0mA, Tj = 25°C
I
O
= 5 to 7V, f = 120Hz
V
I
f = 10Hz to 100kHz
= −30 to +125°C
T
j
a
3.84
56
4.164
3.5
10
20
0.07
0.12
0.6
67
80
0.2
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 5V, IO = 20mA and CO = 10µF.
I
SFF00007AEB
3
Page 4
AN80xx/AN80xxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
•
AN8045, AN8045M (4.5V type)
50
35
45
0.2
0.3
5.25
50
40
50
0.2
0.3
Unit
V
mV
mV
mV
V
V
1
mAI
dBRR
µVV
mV/°C∆VO/T
Unit
V
mV
mV
mV
V
V
1
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
= 5 to 10.5V, Tj = 25°C
= 4.3V, IO = 20mA, Tj = 25°C
= 4.3V, IO = 50mA, Tj = 25°C
= 5.5 to 7.5V, f = 120Hz
4.32
54
4.684.5
4
11
23
0.07
0.12
0.7
66
85
0.23
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
•
AN8005, AN8005M (5V type)
= 5.5V, IO = 20mA and CO = 10µF.
I
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
= −30 to +125°C
T
j
a
= 5.5 to 11V, Tj = 25°C
= 4.8V, IO = 20mA, Tj = 25°C
= 4.8V, IO = 50mA, Tj = 25°C
= 6 to 8V, f = 120Hz
4.8
52
4.5
12
25
0.07
0.12
0.7
64
95
0.25
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 6V, IO = 20mA and CO = 10µF.
I
•
AN8006, AN8006M (6V type)
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
T
V
O
Bias
no
= 25°C
j
V
= 6.5 to 12V, Tj = 25°C
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
= 5.8V, IO = 20mA, Tj = 25°C
V
I
= 5.8V, IO = 50mA, Tj = 25°C
V
I
= 0mA, Tj = 25°C
I
O
= 7 to 9V, f = 120Hz
V
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
5.76
51
5.5
13
28
0.07
0.13
0.7
63
105
0.3
Unit
6.246
60
45
55
0.2
0.3
1.2
V
mV
mV
mV
V
V
mAI
dBRR
µVV
mV/°C∆VO/T
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
4
= 7V, IO = 20mA and CO = 10µF.
I
SFF00007AEB
Page 5
AN80xx/AN80xxM Series
yp
yp
■ Electrical Characteristics at Ta = 25°C (continued)
•
AN8007, AN8007M (7V type)
70
50
60
0.2
0.3
1.3
80
55
65
0.2
0.3
1.3
Unit
V
mV
mV
mV
V
V
mAI
dBRR
µVV
mV/°C∆VO/T
Unit
V
mV
mV
mV
V
V
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
I
= 0mA, Tj = 25°C
O
V
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
= 7.5 to 13V, Tj = 25°C
= 6.8V, IO = 20mA, Tj = 25°C
= 6.8V, IO = 50mA, Tj = 25°C
= 8 to 10V, f = 120Hz
6.72
50
7.287
6.5
14
31
0.07
0.13
0.7
62
120
0.35
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
•
AN8008, AN8008M (8V type)
= 8V, IO = 20mA and CO = 10µF.
I
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
= 8.5 to 14V, Tj = 25°C
= 7.8V, IO = 20mA, Tj = 25°C
= 7.8V, IO = 50mA, Tj = 25°C
= 9 to 11V, f = 120Hz
7.68
49
8.328
7.5
15
34
0.07
0.14
0.7
61
135
0.4
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 9V, IO = 20mA and CO = 10µF.
I
•
AN8085, AN8085M (8.5V type)
90
60
70
0.2
0.3
1.4
Unit
V
mV
mV
mV
V
V
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
T
V
O
Bias
no
= 25°C
j
V
= 9 to 14.5V, Tj = 25°C
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
= 8.3V, IO = 20mA, Tj = 25°C
V
I
V
= 8.3V, IO = 50mA, Tj = 25°C
I
I
= 0mA, Tj = 25°C
O
V
= 9.5 to 11.5V, f = 120Hz
I
f = 10Hz to 100kHz
T
= −30 to +125°C
j
a
8.16
48
8.848.50
8.3
16
36
0.07
0.14
0.8
60
140
0.43
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 9.5V, IO = 20mA and CO = 10µF.
I
SFF00007AEB
5
Page 6
AN80xx/AN80xxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
•
AN8009, AN8009M (9V type)
70
75
0.2
0.3
1.4
75
85
0.2
0.3
1.4
Unit
V
mV
mV
mV
V
V
mAI
dBRR
µVV
mV/°C∆VO/T
Unit
V
mV
mV
mV
V
V
mAI
dBRR
µVV
mV/°C∆VO/T
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
= −30 to +125°C
T
j
a
= 9.5 to 15V, Tj = 25°C
= 8.8V, IO = 20mA, Tj = 25°C
= 8.8V, IO = 50mA, Tj = 25°C
= 10 to 12V, f = 120Hz
8.64
47
17
37
0.07
0.14
0.8
59
150
0.45
9.369
9
100
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 10V, IO = 20mA and CO = 10µF.
•
AN8010, AN8010M (10V type)
Parameter Symbol Conditions Min Typ Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
REG
REG
V
DIF(min)
V
Bias
T
= 25°C
O
no
j
V
I
IN
I
= 1 to 40mA, Tj = 25°C
O
L
I
= 1 to 50mA, Tj = 25°C
O
V
I
V
I
= 0mA, Tj = 25°C
I
O
V
I
f = 10Hz to 100kHz
= −30 to +125°C
T
j
a
= 10.5 to 16V, Tj = 25°C
= 9.8V, IO = 20mA, Tj = 25°C
= 9.8V, IO = 50mA, Tj = 25°C
= 11 to 13V, f = 120Hz
9.6
46
10
18
40
0.07
0.14
0.8
58
165
0.5
10.410
100
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
= 11V, IO = 20mA and CO = 10µF.
I
6
SFF00007AEB
Page 7
■ Main Characteristics
AN80xx/AN80xxM Series
PD Ta (AN80xx series)
800
700
600
(mW)
D
500
400
300
200
100
Power dissipation P
0
0 20406080
Ambient temperature Ta (°C)
80
70
60
50
40
30
Ripple rejection ratio RR (dB)
50 100 300
500
Frequency f (Hz)
RR f
1k 3k
100 120 140 160
AN8005
10k 30k
5k
50k
800
700
600
(mW)
D
500
400
300
200
100
Power dissipation P
(V)
O
Output voltage V
100k
PD Ta (AN80xxM series)
Mounted on standard board
glass epoxy: 20 × 20 × t1.7mm
with Cu foil of 1cm2 or more
0
0 20406080
Ambient temperature Ta (°C)
VO V
12
CO = 10µF
= 0mA
I
O
10
8
6
4
2
0
0 5 10 15 20
Input voltage VI (V)
100 120 140 160
I
AN8010/M
AN8005/M
AN8002/M
3
VO I
5.3
5.2
(V)
O
5.1
5.0
4.9
Output voltage V
4.8
4.7
0 102030405060708090100
O
AN8005
= 6V
V
I
= 10µF
C
O
Output current IO (mA)
VO T
5.3
5.2
(V)
O
5.1
5.0
4.9
Output voltage V
4.8
4.7
−40 −20 0 20 40 60 80 100 120 140 160
a
Ambient temperature Ta (°C)
AN8005
= 6V
V
I
= 10µF
C
O
= 0mA
I
O
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AN80xx/AN80xxM Series
■ Application Circuit Example
V
I
AN80xx
V
O
AN80xxM
0.33µF
Series
+
−
10µF
• AN80xx and AN80xxM series have their internal gain increased in order to improve performance. When the power
line on the output side is long, use a capacitor of 10µF.
Also, the capacitor on the output side should be attached as close to the IC as possible.
• When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example,
tantalum capacitor) for output capacitors.
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