Page 1
Prepared
Checked
Approved
Product Specifications
AN17821A
Ref No.
Total Page
Page No.
A
9
1
Structure
Appearance
Application
Function
Absolute Maximum RatingsA
No. Item
1
Storage Temperature
2
Operating Ambient Temperature
3
Operating Ambient Pressure
4
Operating Constant Acceleration
Silicon Monolithic Bipolar IC
SIL-12 Pin Plastic Package (Power Type with Fin)
Low Frequency Amplifier
BTL 5.0W x 2ch Power Amplifier
with Standby Function and Volume Function
Symbol
Tstg
Topr
Popr
Gopr
Ratings
-55 ~ +150
-25 ~ +70
1.013x105±0.61x10
9,810 m/s
Unit
5
° C
° C
Pa
Note
1
1
2
5
Operating Shock
6
Supply Voltage
7
Supply Current
8
Power Dissipation
Operating Supply Voltage Range
Note 1)
The temperature of all items shall be Ta=25°C except storage temperature and
operating ambient temperature.
2)
At no signal input.
Sopr
Vcc
Icc
P
D
Vcc 3.5V ~ 13.5V
4,900
14.4
2.0
1.92
m/s
V
A
W
2
2
Ta=70°C
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
Page 2
Prepared
Checked
Approved
Product Specifications
AN17821A
Ref No.
Total Page
Page No.
B-1
9
2
Electrical CharacteristicsB
No Item
Quiescent Circuit
1
Current
Standby Current
2
Output Noise
3
Voltage
Voltage Gain
4
Total Harmonic
5
Distortion
Maximum Power
6
Output 1
Symbol
I
CQ
I
STB
V
NO
G
V
THD
PO1
(Unless otherwise specified, the ambient temperature is 25°C±2°C,
Vcc=8.0V, frequency=1kHz and RL=8Ω.)
Test
Cir-
Conditions
cuit
Vin=0V, Vol=0V
1
Vin=0V, Vol=0V
1
Rg=10kΩ, Vol=0V
1
Po=0.5W, Vol=1.25V
1
1
Po=0.5W, Vol=1.25V
THD=10%, Vol=1.25V
1
-
-
-
31
-
2.4
Limits
45
1
0.10
33
0.10
3.0
maxtypmin
100
10
0.4
35
0.5
Unit
mA
µA
mVrms
dB
-
Note
1
%
W
Maximum Power
7
Output 2
Ripple Rejection
8
Ratio
Output Offset
9
Voltage
Volume
10
Attenuation Ratio
11
Channel Balance 1
12
Channel Balance 2
Middle Voltage
13
Gain
14
Channel Crosstalk
PO2
RR
Voff
Att
CB1
CB2
G
Vm
CT
Vcc=11V
1
THD=10%, Vol=1.25V
Rg=10kΩ, Vol=0V
1
Vr=0.5Vrms, fr=120Hz
Rg=10kΩ, Vol=0V
1
Po=0.5W, Vol=0V
1
Po=0.5W, Vol=1.25V
1
1
Po=0.5W, Vol=0.6V
Po=0.5W, Vol=0.6V
1
Po=0.5W, Vol=1.25V
1
4.0
30
-250
70
-1
-2
20.5
40
5.0
50
0
85
0
0
23.5
55
-
-
250
-
1
2
26.5
-
W
dB
mV
dB
dB
dB
dB
dB
1
1
Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT).
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
Page 3
Prepared
Checked
Product Specifications
(Reference Data for Design)
Ref No.
Total Page
B-2
9
Approved
Electrical CharacteristicsB
No Item
Standby pin
1
current
Volume pin
2
current
Input Impedance
3
Note)
AN17821A
(Unless otherwise specified, the ambient temperature is 25°C±2°C,
Vcc=8.0V, frequency=1kHz and RL=8Ω.)
Test
Symbol
I
STB2
I
VOL
The above characteristics are reference values determined for IC design, but not guaranteed
values for shipping inspection. If problems were to occur, counter measures will be
sincerely discussed.
Cir-
Conditions
cuit
Vin=0V, VSTB=3V
1
Vin=0V, Vol=0V
1
Z
i
Vin=±0.3VDC
1
-
-12
24
Page No.
Limits
-
-
30
maxtypmin
25
36
3
Unit
-
Note
µA
µA
kΩ
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
Page 4
Prepared
Product Specifications
Checked
Approved
AN17821A
(Description of test circuit and test method)
Test Circuit 1
AN17821A
Ref No.
Total Page
Page No.
C
9
4
470µ
1
+
Vcc
2
3
OUT1
8Ω
4
10µ
5
+
0V
Stand-by
68k
5V
270k
6
+
Vin1
1.0µ
10k
7
8
+
Vin2
1.0µ
Note) If the standby pin is open or 0V, the IC is on standby state.
The IC is in the state of volume minimum if the Volume pin is ground.
The IC is in the state of volume maximum if the Volume pin is open.
0V
10k
Volume
9
10
1.25V
11
OUT2
8Ω
12
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
Page 5
Prepared
Checked
Approved
Circuit Function Block Diagram
Product Specifications
AN17821A
Ref No.
Total Page
Page No.
D
9
5
_
+
1 2 3 4 8765
Vcc
Pin Descriptions
Pin No. Description
1
2
Vcc
Ch.1 Output (+)
Output
GND
_
+
9 10 11
Input
GND
_
+
Output
GND
12
_
+
Pin No. Description
7
8
GND (Input)
Ch.2 Input
3
4
5
6
GND (Ch.1 Output)
Ch.1 Output (-)
Standby
Ch.1 Input
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
9
10
11
12
Volume
Ch.2 Output (-)
GND (Ch.2 Output)
Ch.2 Output (+)
Page 6
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Approved
Product Specifications
AN17821A
Ref No.
Total Page
Page No.
E
9
6
∅ 3.6
20.0±0.1
28.0 ± 0.3
29.96 ± 0.3
6.4 ± 0.3
7.7 ± 0.3
7.8 ± 0.3
Package Name
Unit : mm
0.6 ± 0.1
FP-12S
29.6 ± 0.3
R1.8
0.6
1.2 ± 0.1
1 12
+0.1
-0.05
0.25
2.54
3.5 ± 0.3
Name
of item
Date
Code
Company
insignia
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
Page 7
Prepared
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Approved
(Structure Description)
Product Specifications
AN17821A
Ref No.
Total Page
Page No.
F
9
7
Chip surface passivation
Lead frame material
Inner lead surface process
Outer lead surface process
Chip mounting method
Wire bonding method
Mold material
Molding method
Fin material
Package FP-12S
SiN,
Fe group,
Ag plating,
Solder plating,
Ag paste,
Thermalsonic bonding,
Epoxy,
Transfer mold,
Cu Group
PSG,
Cu group,
Au plating,
Solder dip,
Au-Si alloy, Solder,
Multiplunger mold,
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
1
2 , 6
2
6
3
4
5
5
7
1
4
2
3
5
6
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
Page 8
Prepared
Checked
Product Specifications
(Technical Data)
Ref No.
Total Page
G
9
Approved
13
12
11
10
5°C/W heat sink
9
AN17821A
Rth(j-c) = 2°C/W
( )
Rth(j-a) = 41.7°C/W
FP-12S Package Power Dissipation
PD - Ta
Page No.
8
8
7
6
5
Power Dissipation, PD (W)
4
3
2
1
10°C/W heat sink
20°C/W heat sink
Single Package
Without heat sink
Rthj-a=41.7°C/W
0
0 25 50
Ambient Temperature, Ta (°C)
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
70
75
100 125 150
Page 9
Prepared
Checked
Product Specifications
(Technical Data)
Ref No.
Total Page
G
9
Approved
AN17821A
Page No.
(Precautions for use)
1) Make sure that the IC is free of any pin short-circuiting, ground short-circuiting, pin shift and
reverse insertion.
2) Ground the radiation fin so that there will be no difference in electric potential between the
radiation fin and ground.
3) The thermal protection circuit operates at a Tj of approximately 150°C. The thermal
protection circuit is reset automatically when the temperature drops.
4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high
or the IC operates high output power.
5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the
previous stage.
9
Eff. Date Eff. Date Eff. Date Eff. Date
06-MAR-2002
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1
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