Page 1
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
The AM83135-030 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles,
and temperatures, and withstand a 3:1 output
VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135- 030 is supp lied in the IMP AC™ Hermetic Metal/Ceramic package with internal
Input/Output impedance matching cir cuitry, and is
intended for mili tary and other high reliability applications.
= 30 W MIN. WITH 5.5 dB GAIN
OUT
.310 x .310 2LFL (S064)
ORDER CO DE
AM83135- 030
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM83135-030
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetically sealed
BRANDING
AM83135-30
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
September 1992
Power Dissipation* (TC ≤ 50˚C) 133 W
Device Current* 6.0 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 1.5
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
1/3
Page 2
AM83135-030
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 20mA IE = 0mA 55 — — V
IE = 4mA IC = 0mA 3.5 — — V
IC = 20mA RBE = 10Ω 55 — — V
VBE = 0V VCE = 40V — — 15 mA
VCE = 5V IC = 2A 30 — 300 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf = 3.1 — 3.5GHz PIN = 8.5W VCC = 40V 30 — — %
G
P
Note: Pulse Widt h
f = 3.1 — 3.5GHz PIN = 8.5W VCC = 40V 30 — — W
f = 3.1 — 3.5GHz PIN = 8.5W VCC = 40V 5.5 — — dB
100µSec
=
Duty Cycle=10%
Value
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
.318/
.306
2/3
Page 3
AM83135-030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
3/3
Loading...