Page 1
RF & MICROWAVE TRAN SIST ORS
S-BAND RADAR APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
DESC RIPT ION
The AM83135-010 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applications.
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-010 is supplied in the IMPAC
hermetic metal/c eram ic pack age with internal
input/output impedance matching circuitry, and is
intended for military and other high reliability applications.
10 W MIN. WITH 5.0 dB GAIN
=
.310 x .310 2L F L (S064 )
ORDER CODE
AM83135-010
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
AM83135-010
hermetically sealed
BRANDING
83135-10
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
July 27, 1994
Power Dissipation* (TC≤ 50°C) 50 W
Device Current* 2 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 4.0
case
= 25°C)
°
°
°
C/W
C
C
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Page 2
AM83135-010
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CES
h
FE
= 7mA IE=0mA 55 — — V
= 1mA IC=0 mA 3.5 — — V
= 7mA RBE= 10 Ω 55 — — V
VBE= 0V VCE= 40 V — — 5 mA
VCE= 5V IC=600 mA 30 — — —
DYNAMIC
Symbol Test Conditions
P
OUT
η
P
Note: Pulse Width
f = 3.1 − 3.5 GHz P
cf=3.1 − 3.5 GHz P
f = 3.1 − 3.5 GHz P
G
100µSec
=
Duty Cycle=10%
3.2 W V
=
IN
10 W V
=
OUT
10 W V
=
OUT
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40 V 10 — — W
=
CC
40 V 30 — — %
=
CC
40 V 5.0 — — dB
=
CC
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
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Page 3
IMPEDA NCE DATA
TYPICAL I NPUT
IMPEDANCE
Z
IN
AM83135-010
TYPICAL COLLECTOR
LOAD I MPEDANCE
Z
CL
FREQ. ZIN(Ω)Z
L=3.1 GHz 12.1 − j 1.6 12.7 + 16.0
M=3.3 GHz 10.0 + j 1.9 14.3 + j 9.5
H=3.5 GHz 5.5 + j 1.7 6.8 + j 7.7
TEST CIRCUIT
CL
(Ω)
Z
CL
L
H
Z
IN
H
L
P
3.2W
=
IN
V
40V
CC =
Normalized to 50 ohms
All dimensions are in mils.
Substrate material: .025” thick Al2O
C1,C2 : 33 pF 50V Chip Capacitor
C3 : 1 µf 50V Electrolytic Capacitor
C4 : 1000 pF 200V Feedthru Capacitor
3
C5 : 0.1 µF 50V Disc Ceramic Capacitor
C6 : 100 µf 63V Electrolytic Capacitor
C7 : 33 pF 50V Chip Capacitor
L1,L2 : RF Choke, 2 Turns #26 Tinned Wire, .080” I.D.
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Page 4
AM83135-010
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0221 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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