Page 1
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMIT TER SITE BALLASTED
. RUGGEDIZED VSWR 3:1 @ 1 dB OVER-
DRIVE
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
DESCRIPT I ON
The AM82731-050 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability applications.
50 W MIN. WITH 6 dB GAIN
.400 x . 400 2L FL (S0 36)
ORDER CODE
AM82731-050
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
AM82731-050
hermeticallysealed
BRAN DI NG
82731-50
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
August 1992
Power Dissipation* (TC≤ 50°C) 167 W
Device Current* 8 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 1.2 °C/W
case
= 25°C)
°
C
°
C
1/4
Page 2
AM82731-050
ELEC TRICAL SPEC I F ICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 25mA IE= 0mA 55 — — V
IE= 5mA IC= 0mA 3.5 — — V
IC = 25mA RBE= 10Ω 55 — — V
VCE= 40V — — 20 mA
VCE= 5V IC= 3A 30———
DYNAMIC
Symb ol Test Co n dit i o ns
P
OUT
η
cf=2700 — 3100MHz P
G
P
Note: Pulse Widt h
f = 2700 — 3100MHz P
f = 2700 — 3100MHz P
100µS
=
Duty Cycle=10%
12.5W V
IN =
12.5W V
IN =
12.5W V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40V 50 56 — W
CC =
40V 30 35 — %
CC =
40V 6.0 6.5 — dB
CC =
Unit
Unit
TYPICAL PERFORMAN CE
COLLECTOR EFFICIENCY vs
COLLECTOR EFFICIENCY vs FREQUENCY
FREQUENCY
50
C
O
L
L
E
C
T
O
R
E
F
F
I
C
I
E
N
C
Y
%
36.4
40
30
20
10
2.7 2.9 3.1
39.5
50 Watts Ouput
@ 100µS 10% Pulse
V
40 Volts
CC
=
FREQUENCYFREQUENCY
38.0
Upper Window
Mean
Lower Window
GAIN vs FREQUENCY
GAIN vs FREQUENCY
8.00
6.93
7.00
G
A
I
6.00
N
d
B
5.00
4.00
2.7 2.9 3.1
7.19
50 Watts Output
@ 100µS 10% Pulse
V
40 Volts
CC
=
FREQUENCYFREQUENCY
6.43
Upper Window
Mean
Lower Window
2/4
Page 3
IMPEDA NCE DATA
AM82731-050
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
FREQ. ZIN(Ω)Z
L = 2.7 GHz 7.4 + j 5.4 7.1 − j 8.6
M = 2.9 GHz 7.8 + j 3.0 5.4 − j 7.4
H = 3.1 GHz 8.0 + j 2.0 4.6 − j 2.6
TEST CIRCUIT
Z
IN
L
H
H
Z
CL
Z
CL
L
CL
(Ω)
PIN= 12.5 W
VCC= 40 V
Z0= 50 ohms
3/4
Page 4
AM82731-050
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement of patents orother rightsof third parties which may results from itsuse. No
license isgrantedby implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publicationare subject to changewithout notice.This publication supersedes andreplaces allinformation previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - HongKong - Italy- Japan - Korea -Malaysia - Malta - Morocco -The Netherlands -
Singapore - Spain - Sweden- Switzerland -Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUPOF COMPANIES
4/4
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