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RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
The AM82731-012 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operaion over a wide
range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with
a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and automatic
wire bondi ng t echniqu es en sure hi gh rel ia bilit y an d
product consistency (including phase characteristics).
The AM82 731- 012 i s supp li ed in th e Her met ic Metal/Ceramic package with internal Input/Output impedance matching sircuitry, and is intended for
military and other high reliability applications.
= 12 W MIN. WITH 6.0 dB GAIN
OUT
.400 x .400 2LFL (S036)
ORDER CO DE
AM82731-012
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM82731-012
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetical ly sealed
BRANDI NG
82731-12
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
August 1992
Power Dissipation* (TC ≤ 50˚C) 50 W
Device Current* 2.0 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 4.0
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
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AM82731-012
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Valu e
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 7mA IE = 0mA 55 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 7mA RBE = 10Ω 55 — — V
VCE = 40V — — 5 m A
VCE = VI
= 600mA 30 — 300 —
C
Min. Typ. Max.
DYNAMIC
Value
Symbol Test Conditi ons
P
OUT
η
cf = 2700 —3100 MHz PIN = 3.0W VCC = 40V 30 — — %
G
P
Note: Pulse Widt h
f = 2700 —3100 MHz PIN = 3.0W VCC = 40V 12 — — W
f = 2700 —3100 MHz PIN = 3.0W VCC = 40V 6.0 — — dB
100µS
=
Duty Cycle=10%
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
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AM82731-012
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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