Datasheet AM82731-006 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

S-BAND RADAR APPLICAT IONS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. 5: 1 VSWR CAPABILITY

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT IMPEDANCE MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT =

.BANDW ID T H

5.5 W. MIN. WITH 5.6 dB GAIN
400 MHz

=

.400 x .400 2NL F L (S 042)

ORDER CODE

AM 82731-006

AM82731-006

hermetically sealed

BRAN DI NG

82731-6

DESCRIPT ION

The AM82731-006 deviceisamediumpower silicon
bipolar NPN transistor specifically designed for S­Band radar pulsed driver applications.

Thisdeviceis capable ofoperation overa widerange
of pulse widths, duty cycles,and temperatures and
can withstanda 5:1 output VSWR. Low RFthermal
resistance, refractory/gold metallization, and auto­maticwire bonding techniques ensure high reliability
and productconsistency.

The AM82731-006 is supplied in the hermetic met­al/ceramic packagewithinternal input/output imped­ance matching circuitry, and is intended for military
and otherhigh reliability applications.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

P

DISS

Ic Device Current* 1.8 A

V

CC

T

J

T

STG

Power Dissipation* (T

Collector-Supply Voltage* 34 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

case

C

= 25°C)

100°C)

≤

PIN CONNEC T IO N

1. Collector 3. Emitter

2. Base 4. Base

40 W

°

C

°

C

THERMA L DATA

RTH(j-c) Junction-Case Thermal Resistance 3.75

*Appliesonly to rated RFamplifier operation

August 1992

°

C/W

1/4

AM82731-006

ELEC TRICAL SPECIFICA TI ONS (T

case

= 25°C)

STATIC

Symbol Test Condition s

BV
BV
BV

I

CES

h

CBO
EBO
CER

FE

C

I

= 5mA IE= 0mA 50 — — V

C

IE= 1mA IC= 0mA 3.5 — — V
IC= 5mA RBE= 10Ω 50 — — V
VCE= 30V — — 4 mA
VCE= 5V IC= 500mA 10 — — —

DYNAMIC

Symbol T est Conditions

P

OUT

η

C

G

PB

Note: Pulse Width

f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P

100µS

=

Duty Cyc le=10%

1.5W V

IN =

1.5W V

IN =

1.5W V

IN =

Value

Min. Typ. Max.

Value

Min. Typ. Max.

30V 5.5 6.0 — W

CC =

30V 27 32 — %

CC =

30V 5.6 6.0 — dB

CC =

Unit

Uni t

TYPICAL PERFO RMAN CE

TYPICAL BROADBAND

PERFORMANCE

2/4

IMPEDANCE DATA

TYPICAL INPUT

IMPEDANCES

Z

IN

AM82731-006

Z

IN

M

TYPICAL COLLECTOR

LOAD IMPEDANCES

Z

CL

FREQ. ZIN(Ω)Z

CL

L=2.7 GHz 9.0 + j 22.0 48.0 + j 11.5

2.9 GHz 9.0 + j 23.0 43.0 + j 9.0

=

•

M=3.1 GHz 12.5 + j 25.0 30.0 + j 3.0

3.3 GHz 20.0 + j 25.0 21.5 + j 0.0

=

•

H=3.5 GHz 22.0 + j 22.5 16.0 − j 3.0

TEST CIRCUIT

(Ω)

L

H

Z

CL

M

H

PIN= 1.5W
VCC= 30V
Normalized to 50 ohms

L

All dimensions are in inches.
Substrate material: .025 thick Al2O3(Er=9.6)

C1 : 1500 pF RF Feedthru
C2 : 100 µF Electrolytic

C3 : 100 pF Chip Capacitor
L1 : No. 32 Wire, 0.062 Inch Long
L2 : Printed RF Choke

3/4

AM82731-006

PACKAGE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwise under any patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare not authorizedforuse ascritical componentsin life supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A

SGS-THOMSON Microelectronics GROUP OF COMPANIES

4/4