Page 1
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 10: 1 VSWR CAPABILIT Y
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT IMPEDANCE MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
.BANDW ID T H
3.0 W. MIN. WITH 5.7 dB GAIN
400 MHz
=
.400 x .400 2NL F L (S 042)
hermetically sealed
ORDER CODE
AM 82731-003
AM82731-003
BRAN DING
82731-3
DESCRIPT ION
The AM82731-003 deviceisamediumpower silicon
bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.
Thisdeviceis capable ofoperation overa widerange
of pulse widths, duty cycles,and temperatures and
can withstand a10:1 outputVSWR.Low RFthermal
resistance, refractory/gold metallization, and automaticwire bonding techniques ensure high reliability
and productconsistency.
The AM82731-003 is supplied in the hermetic metal/ceramic packagewithinternal input/output impedance matching circuitry, and is intended for military
and otherhigh reliability applications.
ABSOLU TE M AXI MUM RAT ING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 23 W
Device Current* 0.9 A
Collector-Supply Voltage* 34 V
Junction Temperature (Pulsed RF Operation) 250 °C
Storage Temperature − 65 to +200 °C
case
= 25°C)
PIN CON N ECTION
1. Collector 3. Emitter
2. Base 4. Base
THERMA L DATA
RTH(j-c) Junction-Case Thermal Resistance 6.5 °C/W
*Appliesonly to ratedRF amplifieroperation
August 1992
1/4
Page 2
AM82731-003
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Co ndi tions
BV
CBOIC
BV
EBO
BV
CER
I
CES
h
FE
= 2mA IE= 0mA 50 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC= 2mA RBE= 10Ω 50 — — V
VCE= 30V — — 2.0 mA
VCE= 5V IC= 200mA 10 — — —
DYNAMIC
Symbol
P
OUT
η
C
G
PB
Note: Pulse Width
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
Duty Cycle=10%
=
100µS
Test C ond it io ns
0.8W V
IN =
0.8W V
IN =
0.8W V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
30V 3.0 4.0 — W
CC =
30V 27 37 — %
CC =
30V 5.7 7.0 — dB
CC =
Unit
Uni t
TYPICAL PERFO RM AN CE
PEAK POWER
OUTPUT
(W)
COLLECTOR
EFFICI ENCY
(%)
TYPICAL BROADBAND
PERFOR MANCE
1.0
0.8
0.6
0.6
0.8
1.0
2/4
Page 3
IMPEDA NCE D ATA
TYPICAL INPUT
IMPEDANCES
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCES
AM82731-003
Z
CL
FREQ. ZIN(Ω)Z
L=2.7 GHz 11.5 + j 14.0 22.5 + j 5.5
2.9 GHz 11.5 + j 12.5 19.5 + j 5.0
• =
M=3.1 GHz 10.0 + j 15.5 14.5 + j 2.0
3.3 GHz 11.0 + j 19.0 14.5 − j 2.0
• =
H=3.5 GHz 11.0 + j 20.5 17.5 − j 3.5
TEST CIRCUIT
CL
(Ω)
PIN= 0.8W
VCC= 30 V
Normalized at 50 ohms
All dimensions are in inches.
Substrate material: .025 thick Al2O3(Er=9.6)
C1 : 100 pF Microwave Chip Capacitor
C2 : 100 pF Microwave Chip Capacitor
C3 : 1500 pF, RF Feedthru
(Note: Capacitor is mounted on its thin side)
C4 : 100 µF, Electrolytic Capacitor
L1 : No. 32 Wire, 0.500 Inch Long
L2 : Printed RF Choke
L3 : Printed RF Choke
3/4
Page 4
AM82731-003
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwise under any patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare not authorizedforuse ascritical componentsin life supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
4/4
Loading...