Page 1
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.RUGGIZED VSWR
∞
:1
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
The AM81720 -012 is desi gned specif ically for T elecommunications applications.
The device is capable of withstanding any mismatch load condition at any phase angle (VSWR
∞
overlay, emitter site ballasted, geometry utilizing
a refractory/gold metallization system.
The unique AMPAC™ devices are housed in Hermetic Metal/Ceramic packages with internal
Input/Output matching structures.
= 12 W MIN. WITH 7.4 dB GAIN
OUT
:1) under full rated conditions. The unit is an
.400 x .400 2LFL (S036)
ORDER CO DE
AM81720-012
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM81720-012
COMMUNICATIONS APPLICATIONS
hermetically sealed
BRANDING
81720-12
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
September 1992
Junction Temperature at rated RF operating conditions.
Power Dissipation* 31.8 W
Device Current* 1.47 A
Collector-Supply Voltage* 24 V
Junction Temperature 200
Storage Temperature
Junction-Case Thermal Resistance 5.5
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
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AM81720-012
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
I
CBO
EBO
CBO
h
FE
IC = 5mA IE = 0mA 45 — — V
IE = 5mA IC = 0mA 3.0 — — V
VCB = 24V — — 1. 25 mA
VCE = 5V IC = 1A 15 — 150 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 40 — — %
G
P
f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 12 — — W
f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 7.4 — — dB
Value
Min. Typ. Max.
Unit
Unit
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY vs
POWER INPUT
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Page 3
TEST CIRCUIT
AM81720-012
PACKAGE MECHANICAL DATA
Ref.: Dwg.No. J125331
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Page 4
AM81720-012
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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