Page 1
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
40 W MIN. WITH 7 dB GAIN
=
AM81719-040
T ELEM E TR Y AP PLI CAT ION S
PRELIMI NARY D AT A
.400 X .400 2 LF L (M228 )
hermeticallysealed
ORDER CODE
AM81719-040
PIN CONNECTIO N
DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW communications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency.
ABSOLUT E MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
P
T
DISS
I
V
T
STG
C
CC
J
Power Dissipation* 79.5 W
Device Current* 4.8 A
Collector-SupplyVoltage* 30 V
Junction Temperature 200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
− 65 to +200
BRAN DI N G
81719-40
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
July 6, 1995 1/3
Junction-CaseThermal Resistance* 2.2
°
C/W
Page 2
AM8 1719-0 40
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol T est Conditions
BV
CBO
BV
EBO
BV
CES
I
CBO
h
FE V
IC= 50 mA IE= 0mA
IE= 4mA IC=0mA
IC= 80 mA
VCB= 28 V
= 30 V IC= 2.5 A
CE
DYNAMIC
Symbol Test C onditi ons
P
OUT
η
G
f = 1750 − 1850 MHz P
cf=1750 − 1850 MHz P
f = 1750 − 1850 MHz P
P
8.0 W V
=
IN
= 8.0 W VCC= 28 V
IN
8.0 W V
=
IN
CC
CC
=
=
28 V
28 V
Value
Min. Typ. Max.
Unit
42 — — V
3.5 — — V
45 — — V
—— 8mA
30 — 300 —
Value
Min. Typ. Max.
Unit
40 — — W
43 — — %
6.7 — — dB
TEST CIRCUIT
Ref.: Dwg. No. 101-000698
July 6, 1995 2/3
Page 3
PACKAGE MECHANICAL DATA
Ref: Dwg. No. 12-0228 rev. B
AM8 1719-0 40
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
July 6, 1995 3/3
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