Datasheet AM81719-030 Datasheet (SGS Thomson Microelectronics)

RF & MICROWA VE TRANSIST ORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

.LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT

DESC RIPT ION

The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com­munications and telemetry applications in the 1.75

- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay

die geometry computerized automatic wirebonding
is employed to ensure long term reliability and
product consistency.

AM81719-030 is supplied in the industry-standard
AMPAC hermetic metal/ceramic package.

28 W MIN. WITH 6.7 dB GAIN

=

AM81719-030

TELEMETRY APPLICATIONS

PRELIMINARY DATA

.400 SQ 2LFL (M147)

hermetically sealed

ORDER CODE

AM81719-030

PIN CONNE C TIO N

1. Collector 3. Emitter

2. Base 4. Base

BRAND I NG

81719-030

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

P

DISS

I

C

V

CC

T

J

T

STG

THERMA L DA TA

R

TH(j-c)

*Appliesonly to ratedRF amplifieroperation

September 1992

Power Dissipation* 67.3 W
Device Current* 2.67 A
Collector-Supply Voltage* 28 V
Junction Temperature 200
Storage Temperature − 65 to +200

Junction-Case Thermal Resistance* 2.6 °C/W

case

= 25°C)

°

C

°

C

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AM81719-030

ELECTRICAL SPECIF ICATIO NS (Tcase = 25°C)

STATIC

Symbol Test Conditions

BV
BV

BV

I

CES

h

CBO
EBO
CES

FE

IC= 10mA IE= 0mA 45 — — V
IE= 10mA IC= 0mA 3.0 — — V
IC = 10mA 45 — — V
VBE= 0V VCE= 28V — — 5 mA
VCE= 5V IC= 2mA 15 — 150 —

Min. Typ. Max.

DYNAMIC

Symbol Test Conditi ons

P

OUT

η

cf=1.75 — 1.85GHz PIN= 6.0W VCC= 28V 40 — — %

G

P

f = 1.75 — 1.85GHz PIN= 6.0W VCC= 28V 28 — — W

f = 1.75 — 1.85GHz PIN= 6.0W VCC= 28V 6.7 — — dB

Min. Typ. Max.

Value

Value

Unit

Unit

TYPICA L PERFO R MA NCE

POWER OUTPUT & CO LLECTOR

EFFICENCY vs POWER INPUT

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IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

TYPICAL COLLECTOR

LOAD IMPEDANCE

AM81719-030

Z

IN

L

H

Z

CL

H

Z

CL

FREQ. ZIN(Ω)Z

CL

L = 1.7 GHz 10.5 + j 16.0 2.5 − j 2.0

M = 1.8 GHz 10.25 + j 15.0 2.5 + j 0.0

H = 1.9 GHz 9.5 + j 14.5 2.5 + j 2.0

TEST CIRCUIT

Ref. Dwg. No. C125450A
All dimensions are in inches.

(Ω)

L

PIN= 6.0 W
VCC= 28 V
Normalized to 50 ohms

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AM81719-030

PACKAGE MECHANICAL DATA

Ref.: Dwg. No. 12-0147

Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevicesor systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

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