Page 1
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. RUGGEDIZED VSWR
∞
:1
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
55 W MIN. WITH 6.6 dB GAIN
=
AM81214-060
.400 x .400 2N L FL (S 042)
hermetically sealed
ORDER CODE
AM81214-060
DESC RIPTIO N
The AM81214-060 device isa highpower transistor
specifically designed for L-Band radar pulsed output and driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM81214-060 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal
Input/Output matching structures.
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Unit
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 107 W
Device Current* 5.0 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
25°C)
=
PIN CON NE CTI ON
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
81214-60
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
August 1992
Junction-Case Thermal Resistance* 1.4 °C/W
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Page 2
AM81214-060
ELEC TRICAL SPECIFICATIO N S (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 20mA IE= 0mA 55 — — V
I
2mA I
=
E
IC=40mA R
V
0V V
=
BE
0mA 3.5 — — V
=
C
10Ω 55 — — V
=
BE
28V — — 10 mA
=
CE
VCE= 5V IC= 2A 15 — 150 —
DYNAMIC
Symb ol Test Co n diti o ns
P
OUT
η
cf
G
P
Note: Pulse Wi dth
f=1215 — 1400MHz P
1215 — 1400MHz P
=
f = 1215 — 1400MHz P
1000µS
=
Duty Cycle=10%
12W V
=
IN
12W V
=
IN
12W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28V 55 63 — W
=
CC
28V 50 57 — %
=
CC
28V 6.6 7.2 — dB
=
CC
Unit
Uni t
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Page 3
TYPICAL PERFORM AN CE
RELATIVE POWER OUTPUT &
COLLECTOR EFFICIENCY vs
COLLECTOR VOLTAGE
AM81214-060
TYPICAL BRO ADBAND
POWER AM PLIFI ER
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH
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Page 4
AM81214-060
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
P
12.0 W
=
IN
V
28 V
=
CC
Z0= 50 ohms
FREQ. ZIN(Ω)Z
L = 1.2 GHz 6.0 + j 10.0 7.0 − j 10.0
M=1.3 GHz 4.5 + j 11.0 6.0 − j 9.5
H=1.4 GHz 4.0 + j 9.0 5.0 − j 9.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
PIN= 12.0 W
VCC= 28 V
Z
50 ohms
=
0
CL
(Ω)
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Page 5
TEST CIRCUIT
AM81214-060
PACKAGE MECHANICAL DATA
5/6
Page 6
AM81214-060
Information furnished is believed tobe accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rights of third parties which mayresults from its use. No
license isgranted by implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascriticalcomponentsinlife supportdevices orsystems without express
written approval of SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - HongKong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
6/6
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