Datasheet AM81214-006 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICATION S

.310 x .310 2LFL (S064)

hermetically sealed

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

.5:1 VSWR CAPABILITY

.LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT

=

5.5 W MIN. WITH 10 dB GAIN

DESCRI P TI ON

The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Ra­dar pulsed driver applications.

This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera­tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance an d compute rized automatic wire
bonding techniques ensure high reliability and
product consistency.

AM81214-006 is supplied in the grounded IM­PAC Hermetic Metal/Ceramic package with in­ternal input/output matching structures.

PIN CONNECTI ON

BRANDI NG

81214-6

ORDER CODE

AM81214-6

ABSOLUTE MAXIM UM RATINGS (T

case

= 25°C)

Symbol Parameter Value Unit

P

DISS

Power Dissipation* (TC≤ 100°C)

16.7 W

I

C

Device Current* 0.82 A

V

CC

Collector-Supply Voltage* 32 V

T

J

Junction Temperature (Pulsed RF Operation) 250

°

C

T

STG

Storage Temperature

− 65 to +200

°

C

R

TH(j-c)

Junction-CaseThermal Resistance* 9.0 °

C/W

*Appliesonly to rated RF amplifieroperation

AM81214-006

1. Collector 3. Emitter

2. Base 4. Base

THERMAL DATA

ELECTRICAL S PEC I FICATIO NS (T

case

= 25°C)

Symbol Test Conditions

Value

Uni t

Min. Typ. Max.

P

OUT f = 1.2 — 1.4 GHz P

IN

= 0.5 W VCC= 28 V

— 5.5 6.2 W

η

cf=1.2 — 1.4 GHz P

IN

= 0.5 W VCC= 28 V

47 52 — %

G

P f = 1.2 — 1.4 GHz P

IN

= 0.5 W VCC= 28 V

10 10.5 — dB

Note: P ulse Width = 1000µS

Duty Cycle = 10%

STATIC

Symbol Test Conditions

Value

Uni t

Min. Typ. Max.

BV

CBO

IC= 1mA IE=0mA

48 — — V

BV

CER

IC= 5mA RBE= 10Ω

48 — — V

BV

EBO

IE= 1mA IC=0mA

3.5 — — V

I

CES

VBE= 0V VCE= 28 V

——500

µA

h

FE

VCE= 5V IC=500 mA

15 — 300 —

DYNAMIC

TYPICAL PERFOR MANCE

TYPICAL BROADBAND

PERFORMANCE

AM8 1214-006

TEST CIRCUI T

All dimensions are in inches.
Substrate material: .025 thick AI

2O3

C1 : 0.2—2.5 pF Johanson Gigatrim Capacitor
C2 : 0.2—2.5 pF Johanson Gigatrim Capacitor
C3 : 1500 pF Filtercon Feedthrough
C4 : 0.1 µF, Ceramic Capacitor

C5 : 100 µF, Electrolytic Capacitor
C6 : 100 pF Chip Capacitor
L : No. 26 Wire, 4 Turn .062 I.D.

PIN= 0.5 W
V

CC

= 28 V

Normalized to 50 ohms

IMPEDANCE DATA

Z

IN

TYPICAL INPUT

IMPEDANCE

Z

CL

TYPICAL COLLECTOR

LOAD IMPEDANCE

FREQ.

Z

IN

(Ω)Z

CL

(Ω)

L = 1.2 GHz

10.5 + j 9.0 9.0 + j 3.0

M = 1.3 GHz

9.5 + j 8.0 6.5 + j 2.0

AM8 1214-006

PACKAGE MECHANI CAL DATA

Ref.: Dwg. No. 12-0221 rev. A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron­ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

1995 SGS-THOMSON Microelectronics - All Rights Reserved

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AM8 1214-006