Datasheet AM80912-085 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

.5:1 VSWR CAPABILITY

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 85 W MIN. WITH 7.5 dB GAIN

OUT

AM80912-085

AVIONI CS APPLICA TIONS

.400 x . 400 2NLF L (S042)

hermetically sealed

ORDER CODE

AM80912-085

PIN CONNE CTI ON

BRANDING

80912-85

DESC RIPT ION

The AM80912-085 is designed for specialized
avionics applicat i ons including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.

The AM80912-085 is housed in a unique BIG­PAC Hermetic Metal/Ceramic package with in-

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

P

DISS

I

C

V

CC

T

J

T

STG

THERMA L DAT A

R

TH(j-c)

Power Dissipation* (TC≤ 100°C) 300 W
Device Current* 8.0 A
Collector-Supply Voltage* 40 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

Junction-Case Thermal Resistance* 0.75 °C/W

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

°

C

°

C

*Appliesonly to rated RFamplifier operation

August 1992

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AM80912-085

ELEC TRICAL SPE CIF ICA TIONS (T

case

= 25°C)

STATIC

Symbol Test Condition s

BV
BV
BV

I

CES

h

CBO
EBO
CER

FE

IC= 25mA IE= 0mA 55 — — V
I

10mA I

=

E

IC=25mA R
V

0V V

=

BE

0mA 3.5 — — V

=

C

10Ω 55 — — V

=

BE

35V — — 20 mA

=

CE

VCE= 5V IC= 2A 20 — 200 —

DYNAMIC

Symb ol Test Condit i o ns

P

OUT

η

cf

G

P

Note: Pulse format: 6.4 µSon6.6µS off, repeat for 3.3 ms, then of f for 4. 5125 ms

f=960 — 1215MHz P

960 — 1215MHz P

=

f=960 — 1215MHz P

Duty Cycle: Bur st 49.2%, overall 20.8%

IN
IN
IN

15W V

=

15W V

=

15W V

=

35V 85——W

=

CC

35V 40 — — %

=

CC

35V 7.5 — — dB

=

CC

Value

Min. Typ. Max.

Value

Min. Typ. Max.

Unit

Unit

2/5

IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

P

15 W

=

IN

V

35 V

=

CC

Normalized to 10 ohms

AM80912-085

Z

IN

L

H

L = 960 MHz 3.0 + j 5.0 7.0 − j 5.0

• = 1025 MHz 3.5 + j 6.0 5.3 − j 3.0

M = 1090 MHz 5.5 + j 5.5 3.7 − j 1.8

• = 1150 MHz 5.5 + j 5.0 3.3 − j 2.0

H = 1215 MHz 5.3 + j 4.5 3.0 − j 2.5

TYPICAL COLLECTOR

LOAD IMPEDANCE

Z

CL

P

15 W

=

IN

V

35 V

=

CC

Normalized to 10 ohms

FREQ. ZIN(Ω)Z

(Ω)

CL

Z

CL

L

H

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AM80912-085

TEST CIRCUIT

Ref. Dwg. No. J-313119

All dimensions are in inches.
Substrate material: .025 thick AI2O

C1 : 0.3—3.5 pF Variable Johanson Capacitor or Equiv.
C2 : 0.3—3.5 pF Variable Johanson Capacitor or Equiv.
C3 : 100 pF Chip Capacitor
C4 : 1500 pF Erie RF Feedthrough, or Equiv.

(Er = 9.6)

3

.080

C5 : 100 MF, Electrolytic Capacitor, 50V
C6 : 1500 pF Erie RF Feedthrough, or Equiv.
L1 : No. 32 Wire, 4 Turns 1/16” I.D.
L2 : No. 32 Wire, 4 Turns 1/16” I.D.

PACKAGE MECHANICAL DATA

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AM80912-085

Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents orother rightsof third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevicesor systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

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