Datasheet AM80912-030 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

SPECIA LITY AVIONIC S/JTI DS APPLICAT IONS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. 15: 1 VSWR CAPABILITY

. LOW RF THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.O VERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT

30 W MIN. WITH 7.8 dB GAIN

=

.400 x .400 2LFL (S036)

hermetically sealed

ORDER CODE

AM80912-030

AM80912-030

BRAND I NG

80912-30

DESCRIPT I ON

The AM80912-030 device is a high power Class C
transistorspecifically designedforJTIDS pulsedout­put anddriverapplications.

Thisdeviceis capable ofoperation over a widerange
of pulse widths, duty cycles and temperatures and is
capable of withstanding 15:1 output VSWR at rated
RF conditions.

Low RF thermal resistance and computerized auto­maticwirebonding techniques ensure high reliability
and product consistency.

The AM80912-030 is supplied in the hermetic met­al/ceramic package with internal input matching
structures.

ABSOLU TE MAXI MUM RATING S (T

Symbol Parameter Value Uni t

P

T

DISS

I

V

CC

T

STG

C

J

Power Dissipation* (TC≤ 85°C) 75 W
Collector Current* 3.5 A
Collector-Supply Voltage* 40 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

case

= 25°C)

PIN CONNECTION

1. Collector 3. Emitter

2. Base 4. Base

°

C

°

C

THERMA L DAT A

R

TH(j-c)

*Appliesonly to rated RFamplifieroperation.

August 1992

Junction-Case Thermal Resistance 2.2 °C/W

1/6

AM80912-030

ELEC TRICAL SPECIF ICA TIONS (T

case

25° C)

=

STATIC

Symbol Test Condition s

BV
BV
BV

I

CES

h

CBO
EBO
CER

FE

IC= 10mA 55 — — V
I

1mA 3.5 — — V

=

E

I

20mA R

=

C

V

35V — — 5.0 mA

=

CE

V

5V I

=

CE

10Ω 55 — — V

=

BE

1.0A 15 — 150 —

=

C

DYNAMIC

Symbol Test Condition s

P

OUT

η

C

G

P

Note: Pulse fo rmat: 6.4 µson6.6µs off, repeat f or 3. 3 ms, then of f for 4.5125 ms.

f=960 — 1215MHz P
f = 960 — 1215MHz P

f=960 — 1215MHz P

Duty Cycle: Burst 49.2%, over all 20.8%

IN
IN

IN =

5.0W V

=

5.0W V

=

5.0W V

+35V 30 36 — W

=

CC

+35V 40 45 — %

=

CC

+35V 7.8 8.6 — dB

CC =

Value

Min. Typ. Max.

Value

Min. Typ . Max.

Unit

Unit

2/6

TYPICAL PERFORMAN CE

AM80912-030

TYPI CAL BROADBAND

POWER AMPLIFIER

TYPICAL RELATIVE POWER

OUTPUT & COLLECTOR

EFFICIENCY* vs CO LLECTOR

VOLTAGE

MAXIMUM THERMAL RESISTANCE vs PULSE

WIDTH & DUTY CYCLE

DC=20%

DC=4%

Θjc (°C/W)

P

5W

=

IN

V

35 V

=

CC

T

40°C

=

C

PULSE WIDTH (µsec)

3/6

AM80912-030

IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

P

5W

=

IN

V

+35V

=

CC

ZO*=50Ω

L=960 MHz 4.5 + j 6.0 11.0 − j 0.5
M=1090 MHz 5.5 + j 6.3 12.0 − j 2.0
H=1215 MHz 5.0 + j 5.0 12.5 − j 5.0

TYPICAL COLLECTOR

LOAD IMPEDANCE

Z

CL

P

5W

=

IN

V

+35V

=

CC

ZO*=50Ω

FREQ. ZIN(Ω)Z

CL

(Ω)

4/6

*Normalized Impedance

TEST CIRCUIT

AM80912-030

PACKAGE MECHANICAL DATA

5/6

AM80912-030

Information furnished is believed tobe accurateand reliable.However, SGS-THOMSONMicroelectronicsassumes no responsability for the
consequences of use of such information nor for any infringementof patents orother rights of thirdparties which mayresults from its use. No
license isgranted by implication orotherwise underany patentor patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

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