Page 1
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 5: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 6.0 W MIN. WITH 9.3 dB GAIN
OUT
AM80912-005
AVIONI CS APPLICA TIONS
.310 x . 310 2L FL (S 064)
hermetically sealed
ORDER CODE
AM80912-005
PIN CO NNE C TIO N
BRAN DI NG
80912-5
DESCRIPT I ON
The AM80912-005 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM8 0912-005 is housed in the unique
IMPAC Hermetic Metal/Ceramic package with
ABSOLU TE M AXI MUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifier operation
Power Dissipation* (TC≤ 75°C) 25 W
Device Current* 0.9 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 7.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
August 1992
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Page 2
AM80912-005
ELEC TRICAL SPEC I F ICA TIONS (T
case
= 25°C)
STATIC
Value
Symbol Test Condition s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 1mA IE= 0mA 48 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 48 — — V
VBE= 0V VCE= 28V — — 0.5 mA
VCE= 5V IC= 250mA 30 — 300 —
Min. Typ. Max.
DYNAMIC
Value
Symb ol Test Co n dit i o ns
P
OUT
η
cf=960 — 1215MHz PIN= 0.7W VCC= 28V 45 — — %
G
P
Note: Pulse format: 6.4 µSon6.6µS off, repe at for 3.3 ms, then off f or 4.5125 ms.
f = 960 — 1215MHz PIN= 0.7W VCC= 28V 6.0——W
f = 960 — 1215MHz PIN= 0.7W VCC= 28V 9.3 — — dB
Duty Cycle: Burst 49.2%, overall 20.8%
Min. Typ. Max.
Unit
Unit
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Page 3
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
AM80912-005
TYPICAL CO LLECTOR
LOAD IMPEDANCE
Z
CL
FREQ. ZIN(Ω)Z
CL
L = 960 MHz 8.2 + j 8.52 10.5 + j 12.9
M = 1090 MHz 11.1 + j 8.34 9.4 + j 11.3
H = 1215 MHz 15.6 + j 6.8 9.0 + j 8.3
TEST CIRCUIT
(Ω)
Z
CL
L
L
Z
H
PIN= 0.7 W
VCC= 28 V
Normalized to 50 ohms
IN
H
All dimensions are in inches.
Substrate material: .025 thick AI2O
C1 : 100 µF Electrolytic Capacitor, 63V
C2 : .1 µF Ceramic Capacitor
C3 : Feedthrough Bypass SCI 712-022
C4 : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
3
C5 : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
C6 : 100 pF Chip Capacitor
L1 : No. 26 Wire, 4 Turn
L2 : No. 26 Wire, 4 Turn
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Page 4
AM80912-005
PACKAGE MECHANICAL DATA
.318/
.306
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementof patents orother rightsof third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom -U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
4/4
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