Datasheet AM80814-025 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

.LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

DESCRIPTION

AM80814- 025 is a high pow er si li con Cl ass C t ran­sistor designed for ultra-broadband L-Band radar
applications.

This device is capable of operation over a broad
range of pulse widths and duty cycles. Low RF
thermal resistance and computerized automatic
wire bondi ng t echniqu es e nsure hig h rel iab ilit y an d
product consistency.

AM80814-025 is supplied in the industry-standard
AMPAC™ hermetic Metal/Ceramic package incor­porating Input/Output impedance matching.

= 25 W MIN. WITH 7.0 dB GAIN

OUT

.400 x .400 2LFL (S036)

ORDER CO DE

AM80814-025

PIN CONNECTION

1. Collector 3. Emitter

2. Base 4. Base

AM80814-025

L-BAND RADAR APPLICATIONS

PRELIMINARY DATA

hermetically sealed

BRANDING

80814-25

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation

August 1992

Power Dissipation*(TC ≤ 75˚C) 75 W
Device Current* 3.5 A
Collector-Supply Voltage* 38 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature

Junction-Case Thermal Resistance* 2.3

case

= 25°C)

65 to +200

−

°
°

°

C/W

C
C

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AM80814-025

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Valu e

Symbol Test Condi tions

BV
BV
BV

I

CBO
EBO
CER

CES

h

FE

IC = 10mA IE = 0mA 55 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 20mA RBE = 10Ω 55 — — V
VBE = 0V VCE = 28V — — 5 mA
VCE = 5V IC = 1A 15 — 150 —

Min. Typ. Max.

DYNAMIC

Value

Symbol Test Conditi ons

P

OUT

η

cf = 850 — 1400MHz PIN = 5.0W VCC = 35V 38 — — %

G

P

Note: Pulse Widt h

f = 850 — 1400MHz PIN = 5.0W VCC = 35V 25 — — W

f = 850 — 1400MHz PIN = 5.0W VCC = 35V 7.0 — — dB

120µS

=

Duty Cycle=4%

Min. Typ. Max.

Unit

Unit

PACKAGE MECHANICAL DATA

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AM80814-025

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

© 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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