Datasheet AM80814-005 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICA TIONS

.REFRACTORY/GOLD METALLIZATIO N

.EMITTER SITE BALLASTED

.5:1 VSWR CAPABILITY

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT

5.0 W MIN . WIT H 8.5 dB GAIN

=

.310 x . 310 2LF L (S 064)

ORDER CODE

AM80814-005

AM80814-005

hermetically sealed

BRANDING

80814-5

DESC RIPTION

The AM80814-005 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed driver applications.

This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera­tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low thermal re­sistance and computerized automatic wire bonding
techniques ensure high reliability and product con­sistency.

The AM80814-005 is supplied inthe IMPAC Her­meti c M etal/ Cer amic package with int ernal
Input/Output matching structures.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

P

T

DISS

I

V

CC

T

STG

C

J

Power Dissipation* (TC≤ 100°C) 23 W
Device Current* 1.0 A
Collector-Supply Voltage* 28 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature - 65 to +200

case

25°C)

=

PIN CONNE C TIO N

1. Collector 3. Emitter

2. Base 4. Base

°

C

°

C

THERMA L DA TA

R

TH(j-c)

*Appliesonly torated RF amplifieroperation

August 1992

Junction-Case Thermal Resistance* 6.5 °C/W

1/5

AM80814-005

ELECTRICAL SPECIFICATIONS (T

case

=

STATIC

Symbol Test Conditions

BV
BV
BV

I

CES

h

CBO
EBO
CER

FE

IC= 1mA IE= 0mA 48 — — V
I

1mA I

=

E

IC=5mA R
V

0V V

=

BE

0mA 3.5 — — V

=

C

10Ω 48 — — V

=

BE

28V — — 500 mA

=

CE

VCE= 5V IC= 250mA 30 — 300 —

DYNAMIC

Symbol Test Conditions

P

OUT

η

cf

G

P

Note: Pulse Width

f=850 — 1400MHz P

850 — 1400MHz P

=

f=850 — 1400MHz P

120µS

=

Duty Cycle=4%

0.7W V

=

IN

0.7W V

=

IN

0.7W V

IN =

25°C)

Value

Min. T yp. Max.

Value

Min. Typ. Max.

28V 5.0 5.7 — W

=

CC

28V 35 40 — %

=

CC

28V 8.5 9.0 — dB

CC =

Unit

Unit

TYPICAL PERFORMAN CE

8

7

P

O

6

W

E

R

5

O
U

T
P

4

U

T

3

2

800 950 1100 1250 1400

POWER OUTPUT & COLLECTOR

EFFICIENCY vs FREQUENCY

(Watts)

P

IN

0.7

0.6

P

IN

0.5

PW=120µS
DC=4%
V

28 V

=

CC

FREQUENCY (MHz)

FREQUENCY (MHz)

0.5, 0.6W

=

P

=

IN

07W

90

C

85

O

L

80

L

E

75

C
T

70

O
R

65

E

60

F
F

55

I

C

50

I

E

45

N
C

40

Y

35

%

30

2/5

IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

AM80814-005

TYPICAL COLLECTOR

LOAD I MPEDANCE

Z

CL

P

0.7 W

=

IN

V

28 V

=

CC

Normalized to 50 ohms

L = 0.85 GHz 0.22 + j 0.29 0.13 + j 0.15

• = 1.0 GHz 0.21 + j 0.25 0.18 + j 0.18

• = 1.1 GHz 0.19 + j 0.22 0.23 + j 0.17

• = 1.2 GHz 0.18 + j 0.17 0.32 + j 0.16

• = 1.3 GHz 0.17 + j 0.15 0.29 + j 0.02

H = 1.4 GHz 0.16 + j 0.14 0.22 − j 0.06

Z

IN

L

H

Z

CL

H

FREQ. ZIN(Ω)Z

CL

(Ω)

L

3/5

AM80814-005

TEST CIRCUIT

All dimensions are in inches.
Substrate material: .025 thick AI2O

C1 : 100µF Electrolytic Capacitor, 63V
C2 : .1µF Ceramic Capacitor
C3 : Feedthrough Bypass SC! 712-022
C4 : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor

3

C5 : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
C6 : 100 pF Chip Capacitor
L1 : No. 26 Wire, 4 Turn
L2 : No. 26 Wire, 4 Turn

4/5

PACKAGE MECHANICAL DATA

.318/
.306

AM80814-005

Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementof patents orother rights of third parties which may results from its use. No
license isgranted by implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupport devices orsystemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom -U.S.A

SGS-THOMSON MicroelectronicsGROUP OF COMPANIES

5/5