Datasheet AM55-0004TR, AM55-0004SMB, AM55-0004RTR, AM55-0004 Datasheet (MACOM)

Page 1
Preliminary Specifications
250 m W Linea r Po wer Amplifier and T /R Switch
1.8 - 2.0 GHz
Features
Operates Over Full PCN/PCS/PHS Bands
Operates Over +3 V to +5 V Supply Voltage
+24 dBm P
35% PAE @ P
On-Chip T/R Switch, Linear Operation to +30 dBm
Low Cost SSOP-28 Plastic Package
Description
M/A-COM’s AM55-0004 power amplifier/switch integrates a power amplifier and transmit/receive switch in a low cost SSOP package. The power amplifier delivers +24 dBm of linear power with high efficiency and can be operated at supply voltages as low as 2.7 V. It is ideally suited for QPSK or other linearly modulated systems in the 1.8 to 2.0 GHz frequency band.
The power amplifier/switch is fully monolithic and requires only one output capacitor for power match. The T/R switch achieves good insertion loss and isolation without degrading the overall linearity.
The AM55-0004 is ideally suited for final stage power amplification in linear TDD systems. The integrated switch is convenient for duplexing. The AM55-0004 can also be used as a driver stage for high power systems. Typical applications include Japanese PHS systems or PCN/PCS transmit chains.
M/A-COM’s AM55-0004 is fabricated using a mature
0.5-micron gate length GaAs process. The process features full passivation for increased performance and reliability.
Typical at PA Out
1dB
for Linear Operation
1dB
AM55-0004
SSOP-28
+.0037
.3900
-.0041
+.0025
.0275
-.0025
+0,06
0,7
PIN 1
.057 ±.003 1,45±0,08
.007 ±.003 0,18±0,08
.025
0,64
Dimensions are inches over millimeters.
Ordering Information
Part Number Description
AM55-0004 SSOP 28-Lead Plastic Package AM55-0004TR Forward Tape & Reel* AM55-0004RTR Reverse Tape & Reel* AM55-0004SMB Designer’s Kit
If specific reel size is required, consult factory for part
*
number assignment.
9,91
+0,09
-0,1
+.004
.010
0,25
.004 (0,10)
+.0034
.1540
-.0043 +0,09
3,91
-0,11
.015 (0,38) X 45°
.236±.008
5,99±0,2
.0080
.028
0,71
0,2
0-8°
+.022
+0,56
+.0018
-.0005 +0,05
Typical Electrical Specifications
Test conditions: Frequency: 1.9 GHz, V VG2adjusted for 65 mA quiescent bias on V
Parameter Units Min. Typ. Max.
Power Amplifier
Linear Gain dB 22 24 Power Output @ P Current From Positive Supply @ P Input VSWR 2.0:1
T/R Switch
Insertion Loss dB 0.6 1.0 Input Match 1.5:1 Isolation dB 15 20
Specifications Subject to Change Without Notice V2.00
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
at PA OUT port dBm 22.5 24
1dB
1dB
DD1
= V
DD2
, TA= +25°C
DD2
= 4.8 V ±10%, VG1adjusted for 30 mA quiescent bias on V
mA 75 175 275
DD1
,
1
Page 2
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Absolute Maximum Ratings
1
Parameter Absolute Maximum
Max. Input Power Operating Voltages
2
2
+23 dBm VDD= 7 V V
= -5 V
GG
V
- VGG= 8 V
DD
Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C
1. Exceeding these limits may cause permanent damage.
2. Ambient temperature (TA) = +25°C
Pin Configuration
Pin No. Pin Name Description
1 GND DC and RF Ground 2 VSW Complimentary T/R Switch Control,
3 GND DC and RF Ground 4 Tx IN Transmit side of T/R switch 5 GND DC and RF Ground 6 GND DC and RF Ground
7 ANT IN/OUT Common port of T/R switch which
8 GND DC and RF Ground
9 Rx OUT Receive side of T/R switch 10 GND DC and RF Ground 11 GND DC and RF Ground 12 V
13 SAVE Tx Sleep mode control of first stage of
14 GND DC and RF Ground 15 GND DC and RF Ground 16 PA IN RF input of the Power Amplifier 17 GND DC and RF Ground
18 V
19 GND DC and RF Ground 20 V
21 GND Second Stage DC and RF Ground 22 GND Second Stage DC and RF Ground 23 GND Second Stage DC and RF Ground 24 GND Second Stage DC and RF Ground 25 PA OUT RF output of the Power Amplifier
26 V
27 VSW T/R Switch Control, 0 V Tx mode/-4 V
28 GND DC and RF Ground
DD
G1
G2
DD2
1
-4 V Tx mode/0 V Rx mode
is connected to the antenna
Positive bias for the first stage of PA, +2.7 to +6.0 volts
PA ONLY 0 V — first PA stage on
-4 V — first PA stage off
Negative bias control for the first PA stage, voltage divider is on the MMIC, adjusted to set V current, which is typically 30 mA.
Input impedance: 10 k
Negative bias control for the second PA stage, adjusted to set V quiescent bias current, which is typically 65 mA.
Input impedance: > 1M
Positive bias for the second stage of the PA, +2.7 to +6.0 volts
Rx mode
quiescent bias
DD1
DD2
T ruth Table
Operating Mode VSW VSW SAVE Tx
PA Tx X X 0 V PA Sleep X X -4.0 Volts T/R Switch Tx 0 Volts -4.0 Volts X T/R Switch Rx -4.0 Volts 0 Volts X
X - Don’t Care
Functional Diagram and Pin Configuration
GND VSW
GND
Tx IN
GND
GND
ANT IN/OUT
GND
Rx OUT
GND GND V
DD1
SAVE Tx
GND
1
14 15
28
GND
VSW
V
V
DD2
DD1
PA OUT GND
GND
GND
GND
V
V
G2
G1
GND
V
V
G1
G2
GND PA IN
GND
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
2
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250 mW Linear Power Amplifier and T/R Switch AM55-0004
Po wer Amplifier Small Signal Performance
GAIN
27
6.0 V
24
21
6.0 V
3.6 V
3.0 V
4.8 V
GAIN (dB)
18
15
1.50 1.75 2.00 2.25 2.50 FREQUENCY (GHz)
INPUT MATCH
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
1.50 1.75 2.00 2.25 2.50
3.0 V
3.6 V
FREQUENCY (GHz)
4.8 V
1
Po wer Amplifier CWP erf ormance at1.9 GHz
POWER OUTPUT
28 26 24 22
POWER (dBm)
20 18
-5 -3 -1 1 3 P
(dBm)
IN
POWER ADDED EFFICIENCY (%)
45
35
3.6 V
25
PAE (%)
15
5
-5 -3 -1 1 3
3.0 V
P
(dBm)
IN
6.0 V
4.8 V
3.0 V
6.0 V
1
3.6 V
4.8 V
OUTPUT MATCH
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
1. All data measured at TA= +25°C and VG1, VG2adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA, respectively.
Specifications Subject to Change Without Notice V 2.00
6.0 V
4.8 V
3.0 V
3.6 V
1.50 1.75 2.00 2.25 2.50 FREQUENCY (GHz)
GAIN COMPRESSION
0
-1
-2
-3
-4
COMPRESSION (dB)
-5
-5 -3 -1 1 3
6.0 V
P
IN
4.8 V
3.0 V
3.6 V
(dBm)
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
3
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250 mW Linear Power Amplifier and T/R Switch AM55-0004
Power Amplifier Temperature Performance
LINEAR GAIN, V
27
24
21
GAIN (dB)
18
15
1.50 1.75 2.00 2.25 2.50
POWER OUTPUT @ 1.9 GHz, V
28 26 24 22
POWER (dBm)
20
-15°C
= V
DD2
= 4.8 V
+70°C
DD1
+25°C
+70°C
DD1
FREQUENCY (GHz)
= V
-15°C
DD2
+25°C
= 4.8 V
1
Po wer Amplifier Spurious Response at Various Supply Voltages
THIRD ORDER INTERMODULATION RATIO @ 1.9 GHz (TONE SPACING 600 KHz)
30
25
20
IMR (dBc)
15
10
15 17 19 21 23 25
60
50
40
dBc
30
3.0 V
FUNDAMENTAL P
2ND HARMONIC RATIO @ 1.9 GHz
3.0 V
1
/TONE (dBm)
OUT
6.0 V
4.8 V
3.6 V
4.8 V
4.0 V
18
-5 -3 -1 1 3 PIN(dBm)
POWER ADDED EFFICIENCY (%) @ 1.9 GHz,
= V
V
DD1
40 35 30 25
PAE (%)
20 15 10
-5 -3 -1 1 3
1. All data measured at TA= +25°C and VG1, VG2adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA, respectively.
DD2
= 4.8 V
-15°C
+25°C
+70°C
P
(dBm)
IN
20
10 13 16 19 22 25
FUNDAMENTAL P
3RD HARMONIC RATIO @ 1.9 GHz
80 75 70 65
dBc
60 55 50
10 13 16 19 22 25
FUNDAMENTAL P
4.0 V
OUT
OUT
3.0 V
(dBm)
(dBm)
4.8 V
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
4
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250 mW Linear Power Amplifier and T/R Switch AM55-0004
Power Amplifier Spectral Response Under Modulation Drive
(π/4 DQPSK, a = 0.5, 384 kB/sec, 9-bit PN code)
SPECTRAL RESPONSE UNDER MODULATION (VD= 3.0 V, P
0
-20
-40
-60
DENSITY (dBc)
POWER SPECTRAL
-80
1899.0 1899.4 1899.8 1900.2 1900.6 1901.0
SPECTRAL RESPONSE UNDER MODULATION (VD= 4.8 V, P
0
-10
-20
-30
-40
-50
DENSITY (dBc)
-60
POWER SPECTRAL
-70
1899.0 1899.4 1899.8 1900.2 1900.6 1901.0
= 20.5 dBm)
OUT
FREQUENCY (MHz)
= 23.4 dBm)
OUT
FREQUENCY (MHz)
1
1
Transmit/Receive Switch Performance
INSERTION LOSS
0.0
-0.5
-1.0
LOSS (dB)
-1.5
-2.0
1.50 1.75 2.00 2.25 2.50
ISOLATION (@ -15°C, +25°C and +70°C)
-20
-25
-30
-35
ISOLATION (dB)
-40
1.50 1.75 2.00 2.25 2.50
+70°C
FREQUENCY (GHz)
FREQUENCY (GHz)
-15°C
+25°C
RETURN LOSS (@ -15°C, +25°C and+70°C)
0
Output Power Under Modulation
VD(volts) P
OUT
(dBm)
2
3 20.5
3.6 21.4 4 22.2
4.8 23.4 6 23.7
1. Spectral output is tested under the following conditions:
Modulation scheme is π/4 DQPSK with a bit transfer rate of 384 kB/sec and a root Nyquist filter with a = 0.5 per RCR STD-28. The spectrum analyzer settings are as follows:
Resolution bandwidth: 10 kHz Video bandwidth: 100 kHz Sweep time: 5 seconds
2. This chart documents the modulated output power delivered for a fixed adjacent channel interference (ACI) rejection of 55 dBc at a 600-kHz offset.
Specifications Subject to Change Without Notice V 2.00
-5
-10
-15
-20
-25
-30
RETURN LOSS (dB)
-35
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
LINEARITY (Tx MODE)
33 31 29 27 25
POWER OUT (dBm)
23
25 26 27 28 29 30 31 32 33 34
POWER IN (dBm)
In
Out
2.5
1.5
0.5
-0.5
-1.5
-2.5
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
5
COMPRESSION (dB)
Page 6
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Recommended PCB Configuration
Layout View
0.700 in.
0.490 in.
C8
C5
Pin 1
C4
C1
C10
C3
R3
C6
C2
C7
C9
R2
External Circuitry Parts List
Label Value Purpose
C1 - C5 1000 pF Low frequency bypass C6 - C8 68 pF RF bypass C9 1.5 pF Output power tuning C10 15 pF Reduces low frequency gain R1 2.7 k Voltage divider to V R2 1.5 k Voltage divider to V
R3
150 Reduces low frequency gain
Tline 0.250 in. long Power match
G2 G2
R1
Cross-Section View
RF Traces + Components
RF Ground DC Routing Customer Defined
The PCB dielectric between RF traces and RF ground layers should be chosen to reduce RF discontinuities between 50-lines and package pins. M/A-COM recommends an FR-4 dielectric thickness of 0.008 in. (0.2 mm), yielding a 50-line width of 0.015 in. (0.38 mm). The recommended metalization thickness is 1 oz. copper.
Shaded traces are vias to DC routing layer and traces on DC routing layer.
Biasing Procedure
The AM55-0004 requires that V any V procedure is not followed. All FETs in the PA will draw
bias. Permanent damage may occur if this
DD
excessive current and damage internal circuitry.
bias be applied prior to
GG
All off-chip components are low-cost surface mount components obtainable from multiple sources. (0.020 in. x 0.040 in. or 0.030 in. x 0.050 in.)
External Circuitry
VSW
V
1
VSW
Tx IN
ANT IN/OUT
Rx OUT
V
DD1
Save Tx
Specifications Subject to Change Without Notice V 2.00
C8
C5
C4
2 3
4 5 6
7 8 9
10 11
12 13 14
28 27
26 25
24 23
22 21 20
19 18
17 16 15
C10
R3
TLine
C1 C6
C9
C2
C3 C7
R1
R2
DD2
PA OUT
V
G2
V
G1
PA IN
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
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250 mW Linear Power Amplifier and T/R Switch AM55-0004
Designer’ s Kit (AM55-0004SMB)
The AM55-0004SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM55-0004 integrated Power Amplifier and T/R Switch. The evaluation board consists of an AM55-0004, recommended external surface mount circuitry, RF connectors and a DC multipin connector, all mounted to a multi-layer FR-4 PCB. Other items included in the Designer's Kit: a floppy disk (with typical performance data and a .DXF file of the recommended PCB layout) and any additional Application Notes. The AM55-0004SMB PA/Switch evaluation PCB and block diagram are illustrated below with all functional ports labeled.
P/A Switch Sample Board
VDD1
TX IN
ANT IN/OUT
RX OUT
SAVE T
VSW
VSW
DC Connector Pinout
VG1
VG2
PA IN
VDD2
PA OUT
Functional Block Diagram
Tx IN
ANT IN/OUT
Rx OUT PA IN
PA OUT
PCB DC
Connector Number Connector Number
Function
Device Pin PCB DC
Function
Device Pin
1 N/C N/C 11 VSW 27 2V
(+ 4.8 V) 12 12 V
DD1
G1
18 3 SAVE Tx (0 V/-4 V) 13 13 VSW 27 4 GND N/C 14 GND N/C 5 SAVE Tx (0 V/-4 V) 13 15 V 6V
7
G1
VSW
18 16 V
2 17 N/C N/C
8 GND N/C 18 V 9
10 V
Specifications Subject to Change Without Notice V 2.00
VSW
G1
2 19 N/C N/C
18 20 V
G2 G1
G2
( + 4.8 V) 26
DD2
20
18
20
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
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250 mW Linear Power Amplifier and T/R Switch AM55-0004
AM55-0004SMB Biasing Procedure
In order to prevent transients which may damage the MMIC, please adhere to the following procedure.
• Turn on all power supplies and set all voltages to 0 volts BEFORE connecting the power supplies to the DC connector.
• Apply -4.0 volt supply or GND to DC connector pin 9 (VSW, see truth table for desired mode).
• Apply -4.0 volt supply or GND to DC connector pin 13 (VSW, see truth table for desired mode).
• Apply a -4.0 volt supply to the DC connector pin 16 (VG1).
• Apply a -4.0 volt supply to the DC connector pin 18 (VG2).
• Apply a +4.8 volt supply to the DC connector pin 2 (V
• Apply a +4.8 volt supply to the DC connector pin 20 (V
• Apply GND to DC connector pin 5 (Save Tx).
• Adjust VG1supply for desired V
• Adjust VG2supply for desired V
quiescent current (typically 30 mA).
DD1
quiescent current (typically 65 mA).
DD2
• Change voltage on DC connector pin 5 as required (Save Tx, see truth table for desired mode).
• Apply RF power and test.
• To power off, reverse above procedure
1. Set VG1& VG2to -4 V.
2. Set V
DD1
& V
DD2
to 0 V.
3. Set control voltage supplies to 0 V.
4. Disconnect bias lines from DC connector.
5. Turn off power supplies.
DD1
DD2
).
).
Evaluation PCB and RF Connector Losses
Port Reference Estimated Loss (dB)
PA IN 0.15
PA OUT 0.20
Tx IN 0.20
ANT IN/OUT 0.20
Rx OUT 0.20
The DC connector on the Designer’s Kit PCB allows selection of all the device’s operating modes. It is accomplished by one or more of the following methods:
1. A mating female multi-pin connector (Newark Electronics Stock # 46F-4658, not included)
2. Wires soldered to the necessary pins (not included)
3. Clip leads (not included)
4. A combination of clip leads or wires and jumpers (jumpers included as required)
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc. 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266
8
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