M/A-COM’s AM55-0004 power amplifier/switch integrates a
power amplifier and transmit/receive switch in a low cost
SSOP package. The power amplifier delivers +24 dBm of
linear power with high efficiency and can be operated at
supply voltages as low as 2.7 V. It is ideally suited for
QPSK or other linearly modulated systems in the 1.8 to 2.0
GHz frequency band.
The power amplifier/switch is fully monolithic and requires
only one output capacitor for power match. The T/R switch
achieves good insertion loss and isolation without degrading
the overall linearity.
The AM55-0004 is ideally suited for final stage power
amplification in linear TDD systems. The integrated switch is
convenient for duplexing. The AM55-0004 can also be used
as a driver stage for high power systems. Typical applications
include Japanese PHS systems or PCN/PCS transmit chains.
M/A-COM’s AM55-0004 is fabricated using a mature
0.5-micron gate length GaAs process. The process features
full passivation for increased performance and reliability.
Specifications Subject to Change Without NoticeV2.00
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
at PA OUT portdBm22.524
1dB
1dB
DD1
= V
DD2
, TA= +25°C
DD2
= 4.8 V ±10%, VG1adjusted for 30 mA quiescent bias on V
mA75175275
DD1
,
1
Page 2
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Absolute Maximum Ratings
1
ParameterAbsolute Maximum
Max. Input Power
Operating Voltages
2
2
+23 dBm
VDD= 7 V
V
= -5 V
GG
V
- VGG= 8 V
DD
Operating Temperature-40°C to +85°C
Storage Temperature-65°C to +150°C
1. Exceeding these limits may cause permanent damage.
2. Ambient temperature (TA) = +25°C
Pin Configuration
Pin No.Pin NameDescription
1GNDDC and RF Ground
2VSWComplimentary T/R Switch Control,
3GNDDC and RF Ground
4Tx INTransmit side of T/R switch
5GNDDC and RF Ground
6GNDDC and RF Ground
7ANT IN/OUTCommon port of T/R switch which
8GNDDC and RF Ground
9Rx OUTReceive side of T/R switch
10GNDDC and RF Ground
11GNDDC and RF Ground
12V
13SAVE TxSleep mode control of first stage of
14GNDDC and RF Ground
15GNDDC and RF Ground
16PA INRF input of the Power Amplifier
17GNDDC and RF Ground
18V
19GNDDC and RF Ground
20V
21GNDSecond Stage DC and RF Ground
22GNDSecond Stage DC and RF Ground
23GNDSecond Stage DC and RF Ground
24GNDSecond Stage DC and RF Ground
25PA OUTRF output of the Power Amplifier
26V
27VSWT/R Switch Control, 0 V Tx mode/-4 V
28GNDDC and RF Ground
DD
G1
G2
DD2
1
-4 V Tx mode/0 V Rx mode
is connected to the antenna
Positive bias for the first stage of
PA, +2.7 to +6.0 volts
PA ONLY
0 V — first PA stage on
-4 V — first PA stage off
Negative bias control for the first PA
stage, voltage divider is on the MMIC,
adjusted to set V
current, which is typically 30 mA.
Input impedance: 10 kΩ
Negative bias control for the second
PA stage, adjusted to set V
quiescent bias current, which is
typically 65 mA.
Input impedance: > 1MΩ
Positive bias for the second stage of
the PA, +2.7 to +6.0 volts
Rx mode
quiescent bias
DD1
DD2
T ruth Table
Operating ModeVSWVSWSAVE Tx
PA TxXX0 V
PA SleepXX-4.0 Volts
T/R Switch Tx 0 Volts-4.0 VoltsX
T/R Switch Rx -4.0 Volts0 VoltsX
X - Don’t Care
Functional Diagram and Pin Configuration
GND
VSW
GND
Tx IN
GND
GND
ANT IN/OUT
GND
Rx OUT
GND
GND
V
DD1
SAVE Tx
GND
1
1415
28
GND
VSW
V
V
DD2
DD1
PA OUT
GND
GND
GND
GND
V
V
G2
G1
GND
V
V
G1
G2
GND
PA IN
GND
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
2
Page 3
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Po wer Amplifier Small Signal Performance
GAIN
27
6.0 V
24
21
6.0 V
3.6 V
3.0 V
4.8 V
GAIN (dB)
18
15
1.501.752.002.252.50
FREQUENCY (GHz)
INPUT MATCH
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
1.501.752.002.252.50
3.0 V
3.6 V
FREQUENCY (GHz)
4.8 V
1
Po wer Amplifier CWP erf ormance at1.9 GHz
POWER OUTPUT
28
26
24
22
POWER (dBm)
20
18
-5-3-113
P
(dBm)
IN
POWER ADDED EFFICIENCY (%)
45
35
3.6 V
25
PAE (%)
15
5
-5-3-113
3.0 V
P
(dBm)
IN
6.0 V
4.8 V
3.0 V
6.0 V
1
3.6 V
4.8 V
OUTPUT MATCH
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
1. All data measured at TA= +25°C and VG1, VG2adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA,
respectively.
Specifications Subject to Change Without NoticeV 2.00
6.0 V
4.8 V
3.0 V
3.6 V
1.501.752.002.252.50
FREQUENCY (GHz)
GAIN COMPRESSION
0
-1
-2
-3
-4
COMPRESSION (dB)
-5
-5-3-113
6.0 V
P
IN
4.8 V
3.0 V
3.6 V
(dBm)
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
3
Page 4
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Power Amplifier Temperature Performance
LINEAR GAIN, V
27
24
21
GAIN (dB)
18
15
1.501.752.002.252.50
POWER OUTPUT @ 1.9 GHz, V
28
26
24
22
POWER (dBm)
20
-15°C
= V
DD2
= 4.8 V
+70°C
DD1
+25°C
+70°C
DD1
FREQUENCY (GHz)
= V
-15°C
DD2
+25°C
= 4.8 V
1
Po wer Amplifier Spurious Response at
Various Supply Voltages
THIRD ORDER INTERMODULATION RATIO @ 1.9 GHz
(TONE SPACING 600 KHz)
30
25
20
IMR (dBc)
15
10
151719212325
60
50
40
dBc
30
3.0 V
FUNDAMENTAL P
2ND HARMONIC RATIO @ 1.9 GHz
3.0 V
1
/TONE (dBm)
OUT
6.0 V
4.8 V
3.6 V
4.8 V
4.0 V
18
-5-3-113
PIN(dBm)
POWER ADDED EFFICIENCY (%) @ 1.9 GHz,
= V
V
DD1
40
35
30
25
PAE (%)
20
15
10
-5-3-113
1. All data measured at TA= +25°C and VG1, VG2adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA, respectively.
DD2
= 4.8 V
-15°C
+25°C
+70°C
P
(dBm)
IN
20
101316192225
FUNDAMENTAL P
3RD HARMONIC RATIO @ 1.9 GHz
80
75
70
65
dBc
60
55
50
101316192225
FUNDAMENTAL P
4.0 V
OUT
OUT
3.0 V
(dBm)
(dBm)
4.8 V
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
4
Page 5
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Power Amplifier Spectral Response Under
Modulation Drive
(π/4 DQPSK, a = 0.5, 384 kB/sec, 9-bit PN code)
SPECTRAL RESPONSE UNDER MODULATION
(VD= 3.0 V, P
0
-20
-40
-60
DENSITY (dBc)
POWER SPECTRAL
-80
1899.01899.41899.81900.21900.61901.0
SPECTRAL RESPONSE UNDER MODULATION
(VD= 4.8 V, P
0
-10
-20
-30
-40
-50
DENSITY (dBc)
-60
POWER SPECTRAL
-70
1899.01899.41899.81900.21900.61901.0
= 20.5 dBm)
OUT
FREQUENCY (MHz)
= 23.4 dBm)
OUT
FREQUENCY (MHz)
1
1
Transmit/Receive Switch Performance
INSERTION LOSS
0.0
-0.5
-1.0
LOSS (dB)
-1.5
-2.0
1.501.752.002.252.50
ISOLATION (@ -15°C, +25°C and +70°C)
-20
-25
-30
-35
ISOLATION (dB)
-40
1.501.752.002.252.50
+70°C
FREQUENCY (GHz)
FREQUENCY (GHz)
-15°C
+25°C
RETURN LOSS (@ -15°C, +25°C and+70°C)
0
Output Power Under Modulation
VD(volts)P
OUT
(dBm)
2
320.5
3.621.4
422.2
4.823.4
623.7
1. Spectral output is tested under the following conditions:
Modulation scheme is π/4 DQPSK with a bit transfer rate
of 384 kB/sec and a root Nyquist filter with a = 0.5 per
RCR STD-28. The spectrum analyzer settings are as follows:
2. This chart documents the modulated output power delivered
for a fixed adjacent channel interference (ACI) rejection of 55
dBc at a 600-kHz offset.
Specifications Subject to Change Without NoticeV 2.00
-5
-10
-15
-20
-25
-30
RETURN LOSS (dB)
-35
1.5 1.61.71.81.92.02.12.22.3 2.42.5
FREQUENCY (GHz)
LINEARITY (Tx MODE)
33
31
29
27
25
POWER OUT (dBm)
23
25 262728293031323334
POWER IN (dBm)
In
Out
2.5
1.5
0.5
-0.5
-1.5
-2.5
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
5
COMPRESSION (dB)
Page 6
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Recommended PCB Configuration
Layout View
0.700 in.
0.490 in.
C8
C5
Pin 1
C4
C1
C10
C3
R3
C6
C2
C7
C9
R2
External Circuitry Parts List
LabelValuePurpose
C1 - C51000 pFLow frequency bypass
C6 - C868 pFRF bypass
C91.5 pFOutput power tuning
C1015 pFReduces low frequency gain
R12.7 k ΩVoltage divider to V
R21.5 k ΩVoltage divider to V
R3
150 ΩReduces low frequency gain
Tline0.250 in. longPower match
G2
G2
R1
Cross-Section View
RF Traces + Components
RF Ground
DC Routing
Customer Defined
The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between
50-Ω lines and package pins. M/A-COM recommends an
FR-4 dielectric thickness of 0.008 in. (0.2 mm), yielding a
50-Ω line width of 0.015 in. (0.38 mm). The recommended
metalization thickness is 1 oz. copper.
Shaded traces are vias to DC routing layer and traces on DC
routing layer.
Biasing Procedure
The AM55-0004 requires that V
any V
procedure is not followed. All FETs in the PA will draw
bias. Permanent damage may occur if this
DD
excessive current and damage internal circuitry.
bias be applied prior to
GG
All off-chip components are low-cost surface mount components obtainable from
multiple sources. (0.020 in. x 0.040 in. or 0.030 in. x 0.050 in.)
External Circuitry
VSW
V
1
VSW
Tx IN
ANT IN/OUT
Rx OUT
V
DD1
Save Tx
Specifications Subject to Change Without Notice V 2.00
C8
C5
C4
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
C10
R3
TLine
C1C6
C9
C2
C3C7
R1
R2
DD2
PA OUT
V
G2
V
G1
PA IN
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
6
Page 7
250 mW Linear Power Amplifier and T/R Switch AM55-0004
Designer’ s Kit (AM55-0004SMB)
The AM55-0004SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM55-0004 integrated Power Amplifier
and T/R Switch. The evaluation board consists of an AM55-0004, recommended external surface mount circuitry, RF
connectors and a DC multipin connector, all mounted to a multi-layer FR-4 PCB. Other items included in the Designer's Kit:
a floppy disk (with typical performance data and a .DXF file of the recommended PCB layout) and any additional
Application Notes. The AM55-0004SMB PA/Switch evaluation PCB and block diagram are illustrated below with all
functional ports labeled.
Specifications Subject to Change Without NoticeV 2.00
VSW
G1
219N/CN/C
1820V
G2
G1
G2
( + 4.8 V)26
DD2
20
18
20
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
7
Page 8
250 mW Linear Power Amplifier and T/R Switch AM55-0004
AM55-0004SMB Biasing Procedure
In order to prevent transients which may damage the MMIC, please adhere to the following procedure.
• Turn on all power supplies and set all voltages to 0 volts BEFORE connecting the power supplies to the
DC connector.
• Apply -4.0 volt supply or GND to DC connector pin 9 (VSW, see truth table for desired mode).
• Apply -4.0 volt supply or GND to DC connector pin 13 (VSW, see truth table for desired mode).
• Apply a -4.0 volt supply to the DC connector pin 16 (VG1).
• Apply a -4.0 volt supply to the DC connector pin 18 (VG2).
• Apply a +4.8 volt supply to the DC connector pin 2 (V
• Apply a +4.8 volt supply to the DC connector pin 20 (V
• Apply GND to DC connector pin 5 (Save Tx).
• Adjust VG1supply for desired V
• Adjust VG2supply for desired V
quiescent current (typically 30 mA).
DD1
quiescent current (typically 65 mA).
DD2
• Change voltage on DC connector pin 5 as required (Save Tx, see truth table for desired mode).
• Apply RF power and test.
• To power off, reverse above procedure
1. Set VG1& VG2to -4 V.
2. Set V
DD1
& V
DD2
to 0 V.
3. Set control voltage supplies to 0 V.
4. Disconnect bias lines from DC connector.
5. Turn off power supplies.
DD1
DD2
).
).
Evaluation PCB and RF Connector Losses
Port ReferenceEstimated Loss (dB)
PA IN0.15
PA OUT0.20
Tx IN0.20
ANT IN/OUT0.20
Rx OUT0.20
The DC connector on the Designer’s Kit PCB allows selection of all the device’s operating modes.
It is accomplished by one or more of the following methods:
1. A mating female multi-pin connector (Newark Electronics
Stock # 46F-4658, not included)
2. Wires soldered to the necessary pins (not included)
3. Clip leads (not included)
4. A combination of clip leads or wires and jumpers
(jumpers included as required)
Specifications Subject to Change Without Notice V 2.00
M/A-COM Inc.■1011 Pawtucket Boulevard, Lowell, MA 01853 USA■Telephone: 800-366-2266
8
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