Datasheet AM29LV800BT90RDW5I1, AM29LV800BT90RDW5C1, AM29LV800BT90RDT5I1, AM29LV800BT90RDT5C1, AM29LV800BT90RDP5I1 Datasheet (AMD Advanced Micro Devices)
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SUPPLEMENT
Publication# 21356 Rev: B Amendment/+1
Issue Date: March 1998
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 2.7 to 3.6 V for read, program, and erase
operations
— Ideal for battery-powered applications
■ Manufactured on 0.35 µm process technology
■ High performance
— 90 or 120 ns access time
■ Low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
T emporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per
sector
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data fr om,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
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2 Am29LV800B Known Good Die
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GENERAL DESCRIPTION
The Am29LV800B in Known Good Die (KGD) form is
an 8 Mbit, 3.0 volt-only Flash memory. AMD defines
KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same
reliability and q uality as AMD produc ts in packaged
form.
Am29LV800B Features
The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The word-w ide data (x16) ap pears on DQ15–
DQ0; the byte-wide (x8) data appears on DQ 7–DQ0.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
The device requires only a single 3.0 volt p ower
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. No V
PP
is required for
program or erase operations. The device can also be
programmed in standard EPROM programmers.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles
also internally latch addresses and data n eeded for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programm ing times by req uiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation.
During erase, the device automatically t i mes t he erase
pulse widths and verifies proper cell margin.
The host system c an detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by re ading the DQ7 (D ata# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sec tor erase arc hitecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
CC
detector that automatically inhibits write operations during p ower transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via programming equipment.
The Eras e Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two pow er-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of qu ality, reliability and cost effectiveness. The device e lectrically erases a ll b its wit hin
a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29LV800B data sheet, publication
number 21490, for full electrical specification s on the
Am29LV800B in KGD form.
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Am29LV800B Known Good Die 3
SUPPLEMENT
PRODUCT SELECTOR GUIDE
DIE PHOTOGRAPH
Family Part Number Am29LV800B KGD
Speed Option (V
CC
= 2.7 – 3.6 V) -90 -120
Max Access Time, t
ACC
(ns) 90 120
Max CE# Access, t
CE
(ns) 90 120
Max OE# Access, t
OE
(ns) 35 50
Orientation relative
to top left corner of
Gel-Pak
Orientation relative
to leading edge of
tape and reel
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4 Am29LV800B Known Good Die
SUPPLEMENT
DIE PAD LOCATIONS
2 1 44 43 42 41 40 39 38 37
35
34
13 14 15 16 17 18 19 20 21 22 23 27 28 29 30
AMD logo location
31 32
33
10
11
12
9876543
36
24 25 26
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Am29LV800B Known Good Die 5
SUPPLEMENT
PAD DESCRIPTION
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Pad Signal
Pad Center (mils) Pad Center (millimeters)
XYXY
1V
CC
0.00 0.00 0.0000 0.0000
2DQ4–12.74 0.00 –0.3235 0.0000
3 DQ12 –18.96 0.00 –0.4817 0.0000
4 DQ5 –25.11 0.00 –0.6377 0.0000
5 DQ13 –31.33 0.00 –0.7959 0.0000
6 DQ6 –37.48 0.00 –0.9519 0.0000
7 DQ14 –43.71 0.00 –1.1101 0.0000
8 DQ7 –49.85 0.00 –1.2661 0.0000
9 DQ15/A–1 –56.08 0.00 –1.4243 0.0000
10 V
SS
–66.01 –1.69 –1.6767 –0.0430
11 BYTE# –66.01 –12.30 –1.6767 –0.3123
12 A16 –66.01 –22.92 –1.6767 –0.5822
13 A15 –65.65 –266.81 –1.6674 –6.7770
14 A14 –59.50 –266.81 –1.5114 –6.7770
15 A13 –53.80 –266.81 –1.3664 –6.7770
16 A12 –47.65 –266.81 –1.2104 –6.7770
17 A11 –41.95 –266.81 –1.0654 –6.7770
18 A10 –35.80 –266.81 –0.9094 –6.7770
19 A9 –30.09 –266.55 –0.7644 –6.7704
20 A8 –23.85 –266.81 –0.6059 –6.7770
21 WE# –18.15 –266.81 –0.4609 –6.7770
22 RESET# –8.06 –270.78 –0.2047 –6.8778
23 RY/BY# 10.07 –270.78 0.2558 –6.8778
24 A18 20.14 –266.81 0.5116 –6.7770
25 A17 25.85 –266.81 0.6566 –6.7770
26 A7 31.99 –266.81 0.8126 –6.7770
27 A6 37.70 –266.81 0.9576 –6.7770
28 A5 43.84 –266.81 1.1136 –6.7770
29 A4 49.55 –266.81 1.2586 –6.7770
30 A3 55.69 –266.81 1.4146 –6.7770
31 A2 61.40 –266.81 1.5596 –6.7770
32 A1 67.54 –266.81 1.7156 –6.7770
33 A0 67.91 –23.08 1.7249 –0.5862
34 CE# 67.91 –12.45 1.7249 –0.3163
35 V
SS
67.91 –1.91 1.7249 –0.0484
36 OE# 58.00 2.27 1.4732 0.0576
37 DQ0 50.02 0.00 1.2705 0.0000
38 DQ8 43.79 0.00 1.1123 0.0000
39 DQ1 37.65 0.00 0.9563 0.0000
40 DQ9 31.42 0.00 0.7981 0.0000
41 DQ2 25.28 0.00 0.6421 0.0000
42 DQ10 19.05 0.00 0.4839 0.0000
43 DQ3 12.91 0.00 0.3279 0.0000
44 DQ11 6.68 0.00 0.1697 0.0000
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6 Am29LV800B Known Good Die
SUPPLEMENT
ORDERING INFORMATION
Standard Pr od ucts
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29LV800B
DEVICE NUMBER/DESCRIPTION
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory—Die Revision 1
3.0 Volt-only Program and Erase
-90
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this document.
It is entered in the revision field of AMD standard product
nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
DIE THICKNESS
5 = 500 µm
PACKAGE TYPE AND MINIMUM ORDER QUANTITY*
DP = Waffle Pack
Die per 5 tray stack
DG = Gel-Pak
®
Die Tray
Die per 6 tray stack
DT = Surftape™ (Tape and Reel)
Die per 7-inch reel
DW = Gel-Pak
®
Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
* Contact an AMD representative for quantities.
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
T
5
Valid Combinations
Am29LV800BT-90
Am29LV800BB-90
DPC 1, DPI 1,
DGC 1, DGI 1,
DTC 1, DTI 1,
DWC 1, DWI 1
Am29LV800BT-120
Am29LV800BB-120
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Am29LV800B Known Good Die 7
SUPPLEMENT
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed infor mation, refer to the
Am29LV800B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the produc t test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD pr oducts without requiring or
implementing burn-in.
Figure 1. AMD KGD Product Test Flow
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
Shipment
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
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8 Am29LV800B Known Good Die
SUPPLEMENT
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 147 mils x 293 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 3.74 mm x 7.45 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size. . . . . . . . . . . . . . 3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 µm x 100 µm
Pad Area Free of Passivation . . . . . . . . . .15.52 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
VCC (Supply Volt age). . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
MANUFACTURING INFORMATION
Manufacturing. . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID (Top Boot). . . . . . . . . . . . .98925AK
(Bottom Boot). . . . . . . . .98925ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhe re to these handling instructions will
result in irrep arable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30°C in a nit rogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Page 9
Am29LV800B Known Good Die 9
SUPPLEMENT
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this
agreement shall be subj ect to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants ar ticles of its manufacture against
defective materials or workmanship for a period of
ninety (90) days from date of shipment. This warranty
does not extend beyond AMD’s customer, and does
not extend to die which has been affixed onto a board
or substrate of any kind. Th e liabil ity of AMD und er t his
warranty is limited, at AMD’s option, solely to repair or
to replacement with equivalent articles, or to make an
appropriate credit adjustment not to exceed th e original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
which Buyer wishes to make a warranty claim against
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
transportation charges paid by AMD, F . O.B. AMD’s factory; and (d) AMD’s examination of such article discloses to its satisfaction that such alleged defect o r
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity othe r than
AMD. The aforementioned provisions do not extend
the original warranty period of any article which has
either been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF AL L
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED W ARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD
SHALL NOT IN ANY EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERL Y OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS
OF USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer s hall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty. Buyer assumes all responsibility for
successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD
Products which are the subject hereof, AMD assumes
no responsibility for environmental effects on die.
AMD products are not designed or authorized for use
as componen ts in life suppor t appliances, d evices or
systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer’s
use of AMD products for use in life support applications
is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or
sale.
REVISION SUMMARY FOR AM29LV800B
KNOWN GOOD DIE
Revision B
Formatted to match current te mplate. Updated Di stinctive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Revision B+1
Distinctive Characteristics
Changed read and program/erase current to match
data sheet.
Pad Description
Corrected signal names for pads 13–44. Replaced
values for all pad coordinates.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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