Datasheet AM29LV400T90WAE, AM29LV400T90WACB, AM29LV400T90WAC, AM29LV400T90SIB, AM29LV400T90SI Datasheet (AMD Advanced Micro Devices)

PRELIMINARY

Publication# 20514 Rev: C Amendment/+1
Issue Date: March 1998

Am29LV400

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-onl y Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with
high performance 3.3 volt microprocessors

■ High performance

— Full voltage range: access times as fast as 100

ns

— Regulated voltage range: access times as fast

as 90 ns

■ Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked via programming

equipment

T emporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Al gorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any
combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Typical 1,000,000 write cycles per sector

(100,000 cycles minimu m guaranteed)

■ Package option

— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being
erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Am29LV400 2

PRELIMINARY

GENERAL DESCRIPTION

The Am29LV400 is a 4 Mbit, 3.0 volt-only Flash
memory organized as 524,288 bytes or 262,144 words.
The device is offered in 48-ball FBGA, 44-pin SO, and
48-pin TSOP packages. The wor d-wide data (x16)

appears on DQ 15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device is designed to be
programmed in-system using only a single 3.0 volt V

CC

supply. No VPP is required for write or erase opera­tions. The device can also be programmed in standard
EPROM programmers.

The standard device offers access times of 90, 100,
120, and 150 ns, allowing high speed microprocessors
to operate without wait states. To eliminate bus conten­tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.

The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally gener­ated and regulated voltages are provided for the
program and erase operations.

The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com­mands are written to the command register using
standard micropr ocessor write ti mings. Register c on­tents serve as input to an i nternal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and dat a needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.

Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto­matically times the program pulse widths and verifies
proper cell margin.

Device erasure occurs by executing the erase com­mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically pre­programs the array (if it is not already programmed) be­fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.

The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by re ading the DQ7 (D ata# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.

The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.

Hardware data protection measures include a low
V

CC

detector that automatically inhibits write opera­tions during p ower transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem­ory. This can be achieved via programming equipment.

The Erase Sus pend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.

The device offers two pow er-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.

AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective­ness. The device e lectrically erases a ll b its wit hin
a sector simultaneously via Fowler-Nordheim tun­neling. The data is programmed using hot electron
injection.

3 Am29LV400

PRELIMINARY

PRODUCT SELECTOR GUIDE

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

Family Part Number Am29LV400

Speed Options

Regulated Voltage Range: VCC =3.0–3.6 V -90R

Full Voltage Range: VCC = 2.7–3.6 V -100 -120 -150

Max access time, ns (t

ACC

) 90 100 120 150
Max CE# access time, ns (tCE) 90 100 120 150
Max OE# access time, ns (tOE) 40 40 40 55

Input/Output

Buffers

X-Decoder

Y-Decoder

Chip Enable

Output Enable

Logic

Erase Voltage

Generator

PGM Voltage

Generator

Timer

VCC Detector

State

Control

Command

Register

V

CC

V

SS

WE#

BYTE#

CE#

OE#

STB

STB

DQ0

–

DQ15 (A-1)

Sector Switches

RY/BY#

RESET#

Data

Latch

Y-Gating

Cell Matrix

Address Latch

A0–A17

20514C-1

Am29LV400 4

PRELIMINARY

CONNECTION DIAGRAMS

A1

A15

NC

A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#

A17
A7
A6
A5
A4
A3
A2

1

16

2
3
4
5
6
7
8

17
18
19
20
21
22
23
24

9
10
11
12
13
14
15

A16

DQ2

BYTE#

V

SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ9
DQ1
DQ8
DQ0

OE#

V

SS

CE#

A0

DQ5

DQ12

DQ4

V

CC

DQ11

DQ3

DQ10

48

33

47
46
45
44
43
42
41
40
39
38
37
36
35
34

25

32
31
30
29
28
27
26

A1

A15

NC

A14
A13
A12
A11
A10

A9

A8
NC
NC

WE#

RESET#

NC
NC

RY/BY#

A17

A7

A6

A5

A4

A3

A2

1

16

2
3
4
5
6
7
8

17
18
19
20
21
22
23
24

9
10
11
12
13
14
15

A16

DQ2

BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13

DQ9
DQ1
DQ8
DQ0
OE#

V

SS

CE#
A0

DQ5
DQ12
DQ4
V

CC

DQ11
DQ3
DQ10

48

33

47
46
45
44
43
42
41
40
39
38
37
36
35
34

25

32
31
30
29
28
27
26

20514C-2

Reverse TSOP

Standard TSOP

5 Am29LV400

PRELIMINARY

CONNECTION DIAGRAMS

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20
21
22

NC

RY/BY#

A17

A7
A6
A5
A4
A3
A2
A1
A0

CE#

V

SS

OE#
DQ0
DQ8
DQ1
DQ9
DQ2

DQ10

DQ3

DQ11

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V

CC

SO

20514C-3

A1 B1 C1 D1 E1 F1 G1 H1

A2 B2 C2 D2 E2 F2 G2 H2

A3 B3 C3 D3 E3 F3 G3 H3

A4 B4 C4 D4 E4 F4 G4 H4

A5 B5 C5 D5 E5 F5 G5 H5

A6 B6 C6 D6 E6 F6 G6 H6

DQ15/A-1 V

SS

BYTE#A16A15A14A12A13

DQ13 DQ6DQ14DQ7A11A10A8A9

V

CC

DQ4DQ12DQ5NCNCRESET#WE#

DQ11 DQ3DQ10DQ2NCNCNCRY/BY#

DQ9 DQ1DQ8DQ0A5A6A17A7

OE# V

SS

CE#A0A1A2A4A3

FBGA

Bump Side (Bottom) View

Am29LV400 6

PRELIMINARY

Special Handling Instructions for Fine
PItch Ball Grid Array (FBGA)

Special handling is required for Flash Memory products
in FBGA packages.

Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be
compromised if the p ackage body is exposed to
temperatures above 150°C fo r prolonged periods of
time.

PIN CONFIGURATION

A0–A17 = 18 addresses
DQ0–DQ14 = 15 data inputs/outputs
DQ15/A-1 = DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)
BYTE# = Selects 8-bit or 16-bit mode
CE# = Chip enable
OE# = Output enable
WE# = Write enable
RESET# = Hardware reset pin, active low
RY/BY# = Ready/Busy# output
V

CC

= 3.0 volt-only single power supply

(see Product Selector Guide for speed

options and voltage supply tolerances)
V

SS

= Device ground

NC = Pin not connected internally

LOGIC SYMBOL

20514C-4

18

16 or 8

DQ0–DQ15

(A-1)

A0–A17

CE#
OE#

WE#
RESET#
BYTE# RY/BY#

7 Am29LV400

PRELIMINARY

ORDERING INFORMATION
Standard Pr od ucts

AMD standard products are available in several packages and operating ranges. The order number (Valid Combi­nation) is formed by a combination of the elements below.

Valid Combinations

Valid Combinations list configurations planned to be sup­ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.

DEVICE NUMBER/DESCRIPTION

Am29LV400
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory

3.0 Volt-only Read, Program, and Erase

CE70RAm29LV400 T

OPTIONAL PROCESSING

Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)

TEMPERATURE RANGE

C=Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)

PACKAGE TYPE

E = 48-Pin Thin Small Outline Package (TSOP)

Standard Pinout (TS 048)

F = 48-Pin Thin Small Outline Package (TSOP)

Reverse Pinout (TSR048)
S = 44-Pin Small Outline Package (SO 044)
WA = 48-ball Fine Pitch Ball Grid Array (FBGA)

0.80 mm pitch, 6 x 8 mm package

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top Sector
B = Bottom Sector

Valid Combinations

Am29LV400T70R,
Am29LV400B70R

EC, EI, FC,

FI, SC, SI, WAC

Am29LV400T80,
Am29LV400B80

EC, EI, EE,

FC, FI, FE,

SC, SI, SE,

WAC, WAI, WAE

Am29LV400T90,
Am29LV400B90

Am29LV400T120,
Am29LV400B120

Am29LV400 8

PRELIMINARY

DEVICE BUS OPERATIONS

This section describes the re quirements and us e of the
device bus operations, which are initiated through the
internal command register . The command register itself
does not occupy any ad dressable memory locatio n.
The register is composed of latches that store the com­mands, along with the address and data information
needed to execute the command. The contents of the

register serve as inputs to the internal state machine.
The state machine outputs d ictate the function of the
device. Table 1 lists the device bus operations, the in­puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.

Table 1. Am29LV400 Device Bus Operations

Legend:

L = Logic Low = V

IL

, H = Logic High = VIH, VID = 12.0 ± 0.5 V , X = Don’t Care, AIN = Addresses In, DIN = Data In, D

OUT

= Data Out

Note: Addresses are A17:A0 in word mode (BYTE# = V

IH

), A17:A-1 in byte mode (BYTE# = VIL).

Word/Byte Configuration

The BYTE# pin controls whether the device data I/O

pins DQ15–DQ0 operate in the byte or word configura­tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active an d c ontrol­led by CE# and OE#.

If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 ar e ac­tive and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.

Requirements for Reading Array Data

To read array data from the outputs, the system must
drive the CE# and OE# pins to V

IL

. CE# is the power
control and selects the device. OE# is the output con­trol and gates array data to the output pins. WE#
should remain at V

IH

. The BYTE# pin determines
whether the device outputs array data in words or
bytes.

The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory con­tent occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard

microprocessor read cycles that assert valid addre sses
on the device address inputs produce valid data on the
device data outputs. The device rem ains enabled for
read access until the command register contents are
altered.

See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica­tions and to Figure 12 for the timing diagram. I

CC1

in

the DC Characteristics table represents the active cur­rent specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which in­cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V

IL

, and OE# to VIH.

For program op erations, the BYTE# pin deter mines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more in­formation.

An erase operation can erase one sector, multiple sec­tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector ad­dress” consists of the address b its requ ired to uni quely
select a sector. The “Command Definitions” section

Operation CE# OE# WE# RESET#

Addresses

(See Note)

DQ0–

DQ7

DQ8–DQ15

BYTE#

= V

IH

BYTE#

= V

IL

Read L L H H A

IN

D

OUT

D

OUT

DQ8–DQ14 = High-Z,

DQ15 = A-1

Write L H L H A

IN

D

IN

D

IN

Standby

V

CC

±

0.3 V

XX

VCC ±

0.3 V

X High-Z High-Z High-Z

Output Disable L H H H X High-Z High-Z High-Z
Reset X X X L X High-Z High-Z High-Z
T emporary Sector Unprotect X X X V

ID

A

IN

D

IN

D

IN

High-Z

9 Am29LV400

PRELIMINARY

has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.

After the system writes the autoselect command se­quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter­nal register (which is separate from the memory array)

on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Autoselect Mode and Autoselect
Command Sequence sections for more information.

I

CC2

in the DC Characteristics table represents the ac­tive current specification for the write mode . The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, t he system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I

CC

read specificat ions apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris­tics” for timing diagrams.

Standby Mode

When the system is not reading or writing to the device,
it can place the device in the standby mo de. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde­pendent of the OE# input.

The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V

CC

± 0.3 V.
(Note that this is a more restricted voltage range than
V

IH

.) If CE# and RESET# are held at VIH, but not within

V

CC

± 0.3 V , t he device will be in the standby mode, but
the standby current will be greater . The devi ce requires
standard access time (t

CE

) for read access when the
device is in either of these standby modes, before it is
ready to read data.

If the device is deselected during erasure or program­ming, the device draws active current until the
operation is completed.

I

CC3

in the DC Characteristics table represents the

standby current specification.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addresses remain stable for
t

ACC

+ 30 ns. The automatic sleep mode is
independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new
data when addresses are chan ged. While in sleep
mode, output data is latched and alway s available to
the system. I

CC4

in the DC Characteristics table
represents the automatic sleep mode current
specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset­ting the device to reading array data. When the RE­SET# pin is driven low for at least a period of t

RP

, the
device immediately terminates any oper ation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device a lso resets the internal sta te ma­chine to reading array data. The operation that was in­terrupted should be reinitiated once the devic e is ready
to accept another command sequence, to ensure data
integrity.

Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V

SS

±0.3 V, the device

draws CMOS standby current (I

CC4

). If RESET# is held

at V

IL

but not within VSS±0.3 V , the standby current will

be greater.
If RESET# is asserted during a program or erase oper-

ation, the RY/BY# pin remains a “0” (busy) until the in­ternal reset operation is complete, which re quires a
time of t

READY

(during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is co mplete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset opera tion is completed
within a time of t

READY

(not during Embedded Algo-

rithms). The system can read data t

RH

after the RE -

SET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# pa-

rameters and to Figure 13 for the timing diagram.

Output Disable Mode

When the OE# input is at VIH, output from the device is

Am29LV400 10

PRELIMINARY

Table 2. Am29LV400T Top Boot Block Sector Address Table

Table 3. Am29LV400B Bottom Boot Block Sector Address Table

Note for Tables 2 and 3: Address range is A17:A-1 in byte mode and A171:A0 in word mode. See “Word/Byte Configuration”

section for more information.

Sector A17 A16 A15 A14 A13 A12

Sector Size

(Kbytes/
Kwords)

Address Range (in hexadecim al )

(x8)

Address Range

(x16)

Address Range

SA0 0 0 0 X X X 64/32 00000h–0FFFFh 00000h–07FFFh
SA1 0 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh
SA2 0 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh
SA3 0 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh
SA4 1 0 0 X X X 64/32 40000h–4FFFFh 20000h–27FFFh
SA5 1 0 1 X X X 64/32 50000h–5FFFFh 28000h–2FFFFh
SA6 1 1 0 X X X 64/32 60000h–6FFFFh 30000h–37FFFh
SA71110XX 32/16 70000h–77FFFh38000h–3BFFFh
SA8111100 8/4 78000h–79FFFh3C000h–3CFFFh
SA9111101 8/4 7A000h–7BFFFh3D000h–3DFFFh

SA1011111X 16/8 7C000h–7FFFFh3E000h–3FFFFh

Sector A17 A16 A15 A14 A13 A12

Sector Size

(Kbytes/
Kwords)

Address Range (in hexadecim al )

(x8)

Address Range

(x16)

Address Range

SA000000X 16/8 00000h–03FFFh00000h–01FFFh
SA1000010 8/4 04000h–05FFFh02000h–02FFFh
SA2000011 8/4 06000h–07FFFh03000h–03FFFh
SA30001XX 32/16 08000h–0FFFFh04000h–07FFFh
SA4 0 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh
SA5 0 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh
SA6 0 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh
SA7 1 0 0 X X X 64/32 40000h–4FFFFh 20000h–27FFFh
SA8 1 0 1 X X X 64/32 50000h–5FFFFh 28000h–2FFFFh
SA9 1 1 0 X X X 64/32 60000h–6FFFFh 30000h–37FFFh

SA10 1 1 1 X X X 64/32 70000h–7FFFFh 38000h–3FFFFh

11 Am29LV400

PRELIMINARY

Autoselect Mode

The autoselect mode provides manu facturer and de­vice identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding progra mming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.

When using programming equipment, the autoselect
mode requires V

ID

(11.5 V to 12.5 V) on address pin

A9. Address pins A6, A1, and A0 must be as shown in

Table 4. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Tables 2 and 3). Table
4 shows the remaining address bits that are don’t care.
When all necessary bits have be en set as required, the
programming equipment may then read the corre­sponding identifier code on DQ7–DQ0.

To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require V

ID

. See “Command Definitions” for

details on using the autoselect mode.

Table 4. Am29LV400 Autoselect Codes (High Voltage Method)

L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.

Sector Protection/Unprotection

The hardware sector protection feature disables both
program and erase operations in any sec tor. The hard­ware sector unprotection feature re-enables both pro­gram and erase operations in pre viously protected
sectors.

Sector protection/unprotection is implemented using
programming equipment, and requires V

ID

on address
pin A9 and OE# . Publication numb er 20873 contains
further details; contact an AMD representative to re­quest a copy.

The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Service. Contact a n
AMD representative for details.

It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.

Temporary Sector Unprotect

This feature allows temporary unprotection of previ­ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE­SET# pin to V

ID

. During this mode, formerly protected
sectors can be programmed or erased by selec ting the
sector addresses. Once V

ID

is removed from the RE­SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 21 shows the timing diagrams, for this feature.

Description Mode CE# OE# WE#

A17

to

A12

A11

to

A10 A9

A8

to

A7 A6

A5

to

A2 A1 A0

DQ8

to

DQ15

DQ7

to

DQ0

Manufacturer ID: AMD L L H X X V

ID

XLXLL X 01h

Device ID:
Am29LV400
(Top Boot Block)

Word L L H

XXVIDXLXLH

22h B9h

Byte L L H X B9h

Device ID:
Am29LV400
(Bottom Boot
Block)

Word L L H

XXV

ID

XLXLH

22h BAh

Byte L L H X BAh

Sector Protection Verification L L H SA X V

ID

XLXHL

X

01h

(protected)

X

00h

(unprotected)

Am29LV400 12

PRELIMINARY

Figure 1. Temporary Sector Unprotect Operation

Hardware Data Protection

The command sequence requirement of unlock cycles
for programming or erasing provides data protection

against inadvertent writes ( refer to Table 5 for com­mand definitions). In add ition, the following hardwar e
data protection mea sures prevent accid ental erasure
or programming, which might otherwise be caused by
spurious system level signals during V

CC

power-up

and power-down transitions, or from system noise.

Low V

CC

Write Inhibit

When V

CC

is less than V

LKO

, the device does not ac-

cept any write cycles. This protects data during V

CC

power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V

CC

is greater than V

LKO

. The system must provide the
proper signals to the control pins to prevent uninten­tional writes when V

CC

is greater than V

LKO

.

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =
V

IL

, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero wh ile OE# is a
logical one.

Power-Up Write Inhibit

If WE# = CE# = V

IL

and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machin e is automatically
reset to reading array data on power-up.

START

Perform Erase or

Program Operations

RESET# = V

IH

Temporary Sector

Unprotect Completed

(Note 2)

RESET# = V

ID

(Note 1)

Notes:

1. All protected sectors unprotected.

2. All previously protected sectors are protected once
again.

20514C-5

13 Am29LV400

PRELIMINARY

COMMAND DEFINITIONS

Writing specific address and data command s or se­quences into the command register initiates device op­erations. Table 5 defines the valid register command
sequences. Writing incorrect address and data val-
ues or writing them in the improper sequence resets
the device to reading array data.

All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

Reading Array Data

The device is a utomatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Em bedded Program or Em­bedded Erase algorithm.

After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys­tem can read array data using the standard read tim­ings, except that if it reads at an address within erase­suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See “Erase Sus­pend/Erase Resume Commands” for more information
on this mode.

The system

must

issue the reset command to re-ena­ble the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com­mand” section, next.

See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame­ters, and Figure 12 shows the timing diagram.

Reset Command

Writing the reset command to the device r esets the de­vice to reading array data. Address bits are don’t care
for this command.

The reset command may be w ritten between the se­quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig­nores reset commands until the operation is complete.

The reset command may be w ritten between the se­quence cycles in a program command sequ ence be­fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.

The reset command may be written between the se­quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command

must

be written to return to reading array data (also applies
to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operat ion,
writing the reset command returns the device to read­ing array data (also applies during Erase Suspend).

See “AC Characteristics” for parameters, and t o Figure
13 for the timing diagram.

Autoselect Command Sequence

The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements.
This method is an alternative to that shown in Table 4,
which is intended for PROM programmers and requires
V

ID

on address bit A9.

The autoselect command sequence is initiated by writ­ing two unlock cycles, followed by the autoselect com­mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another co mmand sequence.
A read cycle at address XX00h retrieves the manufac­turer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code. A
read cycle containing a sector address (SA) and the
address 02h in wor d mode (or 04h i n byte mode) re­turns 01h if that sector is protected, or 00h if it is unpro­tected. Refer to Tables 2 and 3 for valid sector
addresses.

The system must write the reset command to exit the
autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program­ming is a four-bus-cycle operation. The program com­mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is

not

required to provide further controls or ti m­ings. The device automatically generates the program
pulses and verifies the programmed cell margin. Table
5 shows the address and data req uirements for the
byte program command sequence.

When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad­dresses are no longer latched. The system can deter­mine the status of the p rogram operation by usin g
DQ7, DQ6, or RY/BY#. See “Write Op eration Status”
for information on these status bits.

Am29LV400 14

PRELIMINARY

Any commands written to the device during the Em­bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program­ming operation. The Byte Program command se­quence should be reinitiated once the device has reset
to reading array data, to ensure data integrity.

Programming is allowed in any s equence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt

the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was suc ­cessful. However, a succeeding read will show t hat the
data is still “0”. Only erase operations can convert a “0”
to a “1”.

Figure 2 illustrates the algorithm for the program oper­ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 16 for
timing diagrams.

Note: See Table 5 for program command sequence.

Figure 2. Program Operation

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase
command sequence is ini tiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does

not

require the system to
preprogram prior to erase. The Embedded Erase algo­rithm automatically preprograms and verifi es the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con­trols or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.

Any commands written to the chip during the Embed­ded Erase algorithm are ignored. Note that a har dware
reset during the chip erase operation immediately ter­minates the operation. The Chip Erase command se­quence should be reinitiated once the device has
returned to reading array data, to e nsure data integrity.

The system can determine the status of the erase op­eration by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these sta­tus bits. When the Embedded Erase algorithm is com­plete, the device returns to reading array data and
addresses are no longer latched.

Figure 3 illustrates the algorithm for the erase opera­tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. Th e sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad­ditional unlock write cycles are then followed by the ad­dress of the sector to be erased, and the sector erase
command. Table 5 shows the addr ess and data re­quirements for the sector erase command sequence.

The device does

not

require the system to preprogram
the memory prior to erase. The Embedded Erase algo­rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any c ontrols or tim­ings during these operations.

After the command sequence is writte n, a sect or erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com­mands may be written. Loading the sector er ase buf fer
may be done in any sequence, and the number of sec­tors may be from one sector to all sect ors. The time be­tween these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled dur ing this time to

START

Write Program

Command Sequence

Data Poll

from System

Verify Data?

No

Yes

Last Address?

No

Yes

Programming

Completed

Increment Address

Embedded

Program

algorithm

in progress

20514C-6

15 Am29LV400

PRELIMINARY

ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other

than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence

and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector

erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the ris­ing edge of the final WE# pulse in the command se­quence.

Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the op­eration. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.

When the Embedded Erase algorithm is complete, the
device returns to reading array data and addres ses are
no longer latched. The system can determine the sta­tus of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. (Refer to “Write Operation Status” for info rma­tion on these status bits.)

Figure 3 illustrates the algorithm for the erase opera­tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 17 for timing diagrams.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to in­terrupt a sector erase operatio n and then read data
from, or program data to, any sector not selected fo r
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase com mand sequence. The
Erase Suspend c ommand is ignore d if written during
the chip erase operation or Embedded Program algo­rithm. Writing the Erase Suspend command during the

Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad­dresses are “don’t-cares” when writing the Erase Sus­pend command.

When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the er ase operation. H owever,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter­minates the time-out period and suspends the erase
operation.

After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec­tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.

After an erase-suspended program operation is com­plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation us ing the DQ7 or DQ6
status bits, just as in the standard program operation.
See “Write Operation Status” for more information.

The system may also write the autoselect command
sequence when the devic e is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing secto rs, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.

The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-

Am29LV400 16

PRELIMINARY

Notes:

1. See Table 5 for erase command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 3. Erase Operation

START

Write Erase

Command Sequence

Data Poll

from System

Data = FFh?

No

Yes

Erasure Completed

Embedded
Erase
algorithm
in progress

20514C-7

17 Am29LV400

PRELIMINARY

Table 5. Am29LV400 Command Definitions

Legend:

X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.

Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.

PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.

SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A12 uniquely select any sector.

Notes:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles
are write operations.

4. Data bits DQ15–DQ8 are don’t ca res for unlock and
command cycles.

5. Address bits A17–A11 are don’t cares for unlock and
command cycles, except when SA or PA required.

6. No unlock or command cycles required when reading array
data.

7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status da ta).

8. The fourth cycle of the autose lect command sequence is a
read cycle.

9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.

10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.

11. The Erase Resume command is valid only during the Erase
Suspend mode.

Command

Sequence

(Note 1)

Bus Cycles (Notes 2–5)

First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0

Manufacturer ID

Word

4

555

AA

2AA

55

555

90 X00 01

Byte AAA 555 AAA

Device ID,
Top Boot Block

Word

4

555

AA

2AA

55

555

90

X01 22B9

Byte AAA 555 AAA

X02

B9

Device ID,
Bottom Boot Block

Word

4

555

AA

2AA

55

555

90

X01 22BA

Byte AAA 555 AAA

X02

BA

Sector Protect Verify
(Note 9)

Word

4

555

AA

2AA

55

555

90

(SA)

X02

XX00
XX01

Byte AAA 555 AAA

(SA)

X04

00
01

Program

Word

4

555

AA

2AA

55

555

A0 PA PD

Byte AAA 555 AAA

Chip Erase

Word

6

555

AA

2AA

55

555

80

555

AA

2AA

55

555

10

Byte AAA 555 AAA AAA 555 AAA

Sector Erase

Word

6

555

AA

2AA

55

555

80

555

AA

2AA

55 SA 30

Byte AAA 555 AAA AAA 555
Erase Suspend (Note 10) 1 XXX B0
Erase Resume (Note 11) 1 XXX 30

Cycles

Autoselect (Note 8)

Am29LV400 18

PRELIMINARY

WRITE OPERATION STATUS

The device provides several bits to determine the sta­tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 6 and the following subsections de­scribe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host sys­tem whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command se­quence.

During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro­grammed to DQ7. This DQ7 status also applies to pro­gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector , Data# Polling on DQ7 is active for ap­proximately 1 µs, then the device returns to reading
array data.

During the Embedded Erase algorithm, Data# Polling

produces a “0” on DQ7. When the Embedded Erase al­gorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true da tum output
described for the Embedded Program algorithm: the
erase function changes al l the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status in­formation on DQ7.

After an erase command sequence is written, if all sec­tors selected for erasing are p rotected, Data# Polling
on DQ7 is active for approximately 100 µs, the n the de­vice returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se­lected sectors that are protected.

When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the

following

read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 18, Data#
Polling Timings (During Embedded Algorithms), in the
“AC Characteristics” section illustrates this.

Table 6 shows the outputs for Data# Polling on DQ7.
Figure 4 shows the Data# Polling algorithm.

DQ7 = Data?

Yes

No

No

DQ5 = 1?

No

Yes

Yes

FAIL

PASS

Read DQ7–DQ0

Addr = VA

Read DQ7–DQ0

Addr = VA

DQ7 = Data?

START

Notes:

1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because

DQ7 may change simultaneously with DQ5.

20514C-8

Figure 4. Data# Polling Algorithm

19 Am29LV400

PRELIMINARY

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid af ter
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev­eral RY/BY# pins can be tied together in parallel with a
pull-up resistor to V

CC

.

If the output is low (Busy), the device is actively erasing
or programming. (T his includes programmin g in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.

Table 6 shows the outputs for RY/BY#. Figures 13, 16
and 17 shows RY/BY# for reset, program, and erase
operations, respectively.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whe ther an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase op­eration), and during the sector erase time-out.

During an Embedded Program or Erase algorithm op­eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or CE#
to control the read cycles. When the operation is com­plete, DQ6 stops toggling.

After an erase command sequence is written, if all sec­tors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Em­bedded Erase algorithm erases the unprotected sec­tors, and ignores the selected sectors that are
protected.

The system can use DQ6 and DQ2 together to deter­mine whether a sector is actively erasing or is erase­suspended. When the device is actively erasing (that
is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).

If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.

DQ6 also toggl es during the e rase-suspend-pro gram
mode, and stops toggling once the Embedded Pro­gram algorithm is complete.

Table 6 shows the outpu ts f or Toggle Bit I on DQ6. Fig­ure 5 shows the toggle bit algorithm. Figure 19 in the

“AC Characteristics” section shows the toggle bit timing
diagrams. Figure 20 shows the differences between
DQ2 and DQ6 in graphical form. See also the subsec­tion on DQ2: Toggle Bit II.

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indi­cates whether a pa rticular sector is ac tively erasing
(that is, the Embedded Erase algorithm i s in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.

DQ2 toggles w hen the system reads at addresses
within those sectors that have been selected for eras­ure. (The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish whether
the sector is actively erasing or is erase-suspended.
DQ6, by comparison, i ndicates whether the device is
actively erasing, or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and mode
information. Refer to Table 6 to compare outputs for
DQ2 and DQ6.

Figure 5 sho ws the toggle bit alg orithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 19 shows the toggle bit timing diagram. Figure
20 shows the differences between DQ2 and DQ6 in
graphical form.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 5 for th e following discussion. W hen­ever the system initially begins reading toggle bit sta­tus, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Ty pically , the
system would note and store the value of the togg le bit
after the first read. After the second read, the system
would compare the new value of the toggle bi t with the
first. If the toggle bit is not toggling, the device has com­pleted the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read cy­cle.

However, if af ter the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys­tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system
must write the reset command to return to reading
array data.

Am29LV400 20

PRELIMINARY

The remaining scenario is that the system initially de­termines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to mo nitor the
toggle bit and DQ5 through successive read cycles, de­termining the status as described in the previous para­graph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation (top of Figure 5).

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.

The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously
programmed to “0.” Only an erase op eration can

change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation has

exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue

the reset command to return the device to readin g
array data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase time r
does not apply to the chip erase command.) If addi­tional sectors are selected for erasure, the entire time­out also applies after each additional sector erase com­mand. When the time-out is complete, DQ3 switches
from “0” to “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
See also the “Sector Erase Command Sequence” sec­tion.

After the sector erase command sequ ence is written,
the system should read the status on DQ7 (Data# Poll­ing) or DQ6 (Toggle Bit I) to ensure the device has ac­cepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has be­gun; all further commands (other than Erase Su spend)
are ignored until the erase ope ration is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command h as been
accepted, the system software should check the s tatus
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last co mmand might not hav e been ac­cepted. Table 6 shows the outputs for DQ3.

START

No

Yes

Yes

DQ5 = 1?

No

Yes

Toggle Bit

= Toggle?

No

Program/Erase

Operation Not
Complete, Write
Reset Command

Program/Erase

Operation Complete

Read DQ7–DQ0

Toggle Bit

= Toggle?

Read DQ7–DQ0

Twice

Read DQ7–DQ0

Notes:

1. Read toggle bit twice to determine whether or not it is
toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1” . See text.

20514C-9

Figure 5. Toggle Bit Algorithm

(Notes
1, 2)

(Note 1)

21 Am29LV400

PRELIMINARY

Table 6. Write Operation Status

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

Operation

DQ7

(Note 2) DQ6

DQ5

(Note 1) DQ3

DQ2

(Note 2) RY/BY#

Standard
Mode

Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0

Erase
Suspend
Mode

Reading within Erase
Suspended Sector

1 No toggle 0 N/A Toggle 1

Reading within Non-Erase
Suspended Sector

Data Data Data Data Data 1

Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0

Am29LV400 22

PRELIMINARY

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

Ambient Temperature

with Power Applied . . . . . . . . . . . . . –65°C to +125°C

Voltage with Respect to Ground

V

CC

(Note 1) . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

A9, OE#, and

RESET# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V

All other pins (Note 1) . . . . . –0.5 V to V

CC

+0.5 V

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V . During
voltage transitions, input or I/O pins may undershoot V

SS

to –2.0 V for periods of up to 20 ns. See Figure 6.
Maximum DC voltage on input or I/O pins is V

CC

+0.5 V.
During voltage transitions, input or I/O pins may overshoot
to V

CC

+2.0 V for periods up to 20 ns. See Figure 7.

2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may undershoot V

SS

to –2.0 V for periods of up
to 20 ns. See Figure 6. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to 14.0 V for periods
up to 20 ns.

3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.

Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.

Figure 6. M aximum Negative Overshoot

Waveform

Figure 7. Maximum Positive Overshoot

Waveform

OPERATING RANGES

Commercial (C) Devices

Ambient Temperature (T

A

) . . . . . . . . . . . 0°C to +70°C

Industrial (I) Devices

Ambient Temperature (T

A

) . . . . . . . . . –40°C to +85°C

Extended (E) Devices

Ambient Temperature (T

A

) . . . . . . . . –55°C to +125°C

VCC Supply Voltages

V

CC

for regulated voltage range. . . . .+3.0 V to +3.6 V

V

CC

for full voltage range. . . . . . . . . .+2.7 V to +3.6 V

Operating ranges define those limits between which the func­tionality of the device is guaranteed.

20 ns

20 ns

+0.8 V

–0.5 V

20 ns

–2.0 V

20514C-10

20 ns

20 ns

V

CC

+2.0 V

V

CC

+0.5 V

20 ns

2.0 V

20514C-11

23 Am29LV400

PRELIMINARY

DC CHARACTERISTICS
CMOS Compatible

Notes:

1. The I

CC

current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.

2. I

CC

active while Embedded Erase or Embedded Program is in progress.

3. Automatic sleep mode enables the low power mode when addresses remain stable for t

ACC

+ 30 ns.

4. Not 100% tested.

Parameter Description Test Conditions Min Typ Max Unit

I

LI

Input Load Current

V

IN

= VSS to VCC,

V

CC

= VCC

max

±1.0 µA

I

LIT

A9 Input Load Current VCC = V

CC max

; A9 = 12.5 V 35 µA

I

LO

Output Leakage Current

V

OUT

= VSS to VCC,

V

CC

= V

CC max

±1.0 µA

I

CC1

VCC Active Read Current
(Note 1)

CE# = V

IL,

OE#

= VIH,

Byte Mode

5 MHz 10 16

mA

1 MHz 2 4

CE# = V

IL,

OE#

= VIH,

Word Mode

5 MHz 9 16
1 MHz 2 4

I

CC2

VCC Active Write Current
(Notes 2 and 4)

CE# = V

IL,

OE#

= VIH

20 30 mA

I

CC3

VCC Standby Current

V

CC

= V

CC max

;

CE#, RESET# = V

CC

±0.3 V

0.2 5 µA

I

CC4

VCC Reset Current

VCC = V

CC max

;

RESET# = V

SS

± 0.3 V

0.2 5 µA

I

CC5

Automatic Sleep Mode (Note 3)

V

IH

= V

CC

± 0.3 V;

V

IL

= V

SS

± 0.3 V

0.2 5 µA

V

IL

Input Low Voltage –0.5 0.8 V

V

IH

Input High Voltage 0.7 x V

CC

VCC + 0.3 V

V

ID

Voltage for Autoselect and
Temporary Sector Unprotect

VCC = 3.3 V 11.5 12.5 V

V

OL

Output Low Voltage IOL = 4.0 mA, VCC = V

CC min

0.45 V

V

OH1

Output High Voltage

I

OH

= –2.0 mA, VCC = V

CC min

0.85 V

CC

V

V

OH2

IOH = –100 µA, VCC = V

CC min

VCC–0.4

V

LKO

Low VCC Lock-Out Voltage
(Note 4)

2.3 2.5 V

Am29LV400 24

PRELIMINARY

DC CHARACTERISTICS (Continued)
Zero Power Flash

25

20

15

10

5

0

0 500 1000 1500 2000 2500 3000 3500 4000

Supply Current in mA

Time in ns

Note: Addresses are switching at 1 MHz

20514C-12

Figure 8. I

CC1

Current vs. Time (Showing Active and Automatic Sleep Currents)

Note: T = 25 °C

20514C-13

Figure 9. Typical I

CC1

vs. Frequency

15

10

5

0

1 2345

3

.

6

V

2.

7

V

Frequency in MHz

Supply Current in mA

25 Am29LV400

PRELIMINARY

TEST CONDITIONS

Table 7. Test Specifications

KEY TO SWITCHING WAVEFORMS

2.7 kΩ

C

L

6.2 kΩ

3.3 V

Device

Under

Test

20514C-14

Figure 10. Test Setup

Note: Diodes are IN3064 or equivalent

Test Condition

-90R,

-100

-120,

-150 Unit

Output Load 1 TTL gate
Output Load Capacitance, C

L

(including jig capacitance)

30 100 p F

Input Rise and Fall Times 5 ns
Input Pulse Levels 0.0–3.0 V

Input timing measurement
reference levels

1.5 V

Output timing measurement
reference levels

1.5 V

KS000010-PAL

WAVEFORM INPUTS OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted Changing, State Unknown

Does Not Apply Center Line is High Impedance State (High Z)

3.0 V

0.0 V

1.5 V 1.5 V

OutputMeasurement LevelInput

20514C-15

Figure 11. Input Wa veforms and Measurement Levels

Am29LV400 26

PRELIMINARY

AC CHARACTERISTICS
Read Operations

Notes:

1. Not 100% tested.

2. See Figure 10 and Table 7 for test specifications.

Parameter

Description

Speed Option

JEDEC Std Test Setup

-90R -100 -120 -150 Unit

t

AVAV

t

RC

Read Cycle Time (Note 1) Min 90 100 120 150 ns

t

AVQV

t

ACC

Address to Output Delay

CE# = V

IL

OE# = V

IL

Max 90 100 120 150 ns

t

ELQV

t

CE

Chip Enable to Output Delay OE# = V

IL

Max 90 100 120 150 ns

t

GLQV

t

OE

Output Enable to Output Delay Max 40 40 50 55 ns

t

EHQZ

t

DF

Chip Enable to Output High Z (Note 1) Max 30 30 30 40 ns

t

GHQZ

t

DF

Output Enable to Output High Z (Note 1) Max 30 30 30 40 ns

t

OEH

Output Enable
Hold Time (Note 1)

Read Min 0 ns
Toggle and

Data# Polling

Min 10 ns

t

AXQX

t

OH

Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)

Min 0 ns

t

CE

Outputs

WE#

Addresses

CE#

OE#

HIGH Z

Output Valid

HIGH Z

Addresses Stable

t

RC

t

ACC

t

OEH

t

OE

0 V

RY/BY#

RESET#

t

DF

t

OH

20514C-16

Figure 12. Read Operations Timings

27 Am29LV400

PRELIMINARY

AC CHARACTERISTICS
Hardware Reset (RESET#)

Note: Not 100% tested.

Parameter

Description All Speed OptionsJEDEC Std Test Setup Unit

t

READY

RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)

Max 20 µs

t

READY

RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)

Max 500 ns

t

RP

RESET# Pulse Width Min 500 ns

t

RH

RESET# High Time Before Read (See Note) Min 50 ns

t

RPD

RESET# Low to Standby Mode Min 20 µs

t

RB

RY/BY# Recovery Time Min 0 ns

RESET#

RY/BY#

RY/BY#

t

RP

t

Ready

Reset Timings NOT during Embedded Algorithms

t

Ready

CE#, OE#

t

RH

CE#, OE#

Reset Timings during Embedded Algorithms

RESET#

t

RP

t

RB

20514C-17

Figure 13. RESET# Timings

Am29LV400 28

PRELIMINARY

AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)

Parameter

-90R -100 -120 -150JEDEC Std. Description Unit

t

ELFL/tELFH

CE# to BYTE# Switching Low or High Max 5 ns

t

FLQZ

BYTE# Switching Low to Output HIGH Z Max 30 30 30 40 ns

t

FHQV

BYTE# Switching High to Output Active Min 90 100 120 150 ns

DQ15

Output

Data Output

(DQ0–DQ7)

CE#

OE#

BYTE#

t

ELFL

DQ0–DQ14

Data Output

(DQ0–DQ14)

DQ15/A-1

Address

Input

t

FLQZ

BYTE#

Switching

from word

to byte

mode

DQ15

Output

Data Output
(DQ0–DQ7)

BYTE#

t

ELFH

DQ0–DQ14

Data Output

(DQ0–DQ14)

DQ15/A-1

Address

Input

t

FHQV

BYTE#

Switching

from byte

to word

mode

20514C-18

Figure 14. BYTE# Timings for Read Operations

Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.

20514C-19

Figure 15. BYTE# Timings for Write Operations

CE#

WE#

BYTE#

The falling edge of the last WE# signal

t

HOLD

(tAH)

t

SET

(tAS)

29 Am29LV400

PRELIMINARY

AC CHARACTERISTICS
Erase/Program Operations

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

Parameter

-90R -100 -120 -150JEDEC Std. Description Unit

t

AVAV

t

WC

Write Cycle Time (Note 1) Min 90 100 120 150 ns

t

AVWL

t

AS

Address Setup Time Min 0 ns

t

WLAX

t

AH

Address Hold Time Min 50 50 50 65 ns

t

DVWH

t

DS

Data Setup Time Min 50 50 50 65 ns

t

WHDX

t

DH

Data Hold Time Min 0 ns

t

OES

Output Enable Setup Time Min 0 ns

t

GHWL

t

GHWL

Read Recovery Time Before Write
(OE# High to WE# Low)

Min 0 ns

t

ELWL

t

CS

CE# Setup Time Min 0 ns

t

WHEH

t

CH

CE# Hold Time Min 0 ns

t

WLWH

t

WP

Write Pulse Width Min 50 50 50 65 ns

t

WHWL

t

WPH

Write Pulse Width High Min 30 30 30 35 ns

t

WHWH1tWHWH1

Programming Operation (Note 2)

Byte Typ 9

µs

Word Typ 11

t

WHWH2tWHWH2

Sector Erase Operation (Note 2) Typ 0.7 sec

t

VCSVCC

Setup Time (Note 1) Min 50 µs

t

RB

Recovery Time from RY/BY# Min 0 ns

t

BUSY

Program/Erase Valid to RY/BY# Delay Min 90 ns

Am29LV400 30

PRELIMINARY

AC CHARACTERISTICS

OE#

WE#

CE#

V

CC

Data

Addresses

t

DS

t

AH

t

DH

t

WP

PD

t

WHWH1

t

WC

t

AS

t

WPH

t

VCS

555h

PA PA

Read Status Data (last two cycles)

A0h

t

GHWL

t

CS

Status

D

OUT

Program Command Sequence (last two cycles)

RY/BY#

t

RB

t

BUSY

t

CH

PA

Notes:

1. PA = program address, PD = program data, D

OUT

is the true data at the program address.

2. Illustration shows device in word mode.

20514C-20

Figure 16. Program Operation Timings

31 Am29LV400

PRELIMINARY

AC CHARACTERISTICS

OE#

CE#

Addresses

V

CC

WE#

Data

2AAh SA

t

GHWL

t

AH

t

WP

t

WC

t

AS

t

WPH

555h for chip erase

10 for Chip Erase

30h

t

DS

t

VCS

t

CS

t

DH

55h

t

CH

In

Progress

Complete

t

WHWH2

VA

VA

Erase Command Sequence (last two cycles) Read Status Data

RY/BY#

t

RB

t

BUSY

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

2. Illustration shows device in word mode.

20514C-21

Figure 17. Ch ip/Sector Erase Operation Timings

Am29LV400 32

PRELIMINARY

AC CHARACTERISTICS

WE#

CE#

OE#

High

Z

t

OE

High

Z

DQ7

DQ0–DQ6

RY/BY#

t

BUSY

Complement

True

Addresses

VA

t

OEH

t

CE

t

CH

t

OH

t

DF

VA VA

Status Data

Complement

Status Data

True

Valid Data

Valid Data

t

ACC

t

RC

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.

20514C-22

Figure 18. Data# Polling Timings (During Embedded Algorithms)

WE#

CE#

OE#

High Z

t

OE

DQ6/DQ2

RY/BY#

t

BUSY

Addresses

VA

t

OEH

t

CE

t

CH

t

OH

t

DF

VA VA

t

ACC

t

RC

Valid DataValid StatusValid Status

(first read) (second read) (stops toggling)

Valid Status

VA

Note: V A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.

20514C-23

Figure 19. Toggle Bit Timings (During Embedded Algorithms)

33 Am29LV400

PRELIMINARY

AC CHARACTERISTICS

Temporary Sector Unprotect

Note: Not 100% tested.

Parameter

All Speed OptionsJEDEC Std. Description Unit

t

VIDR

VID Rise and Fall Time (See Note) Min 500 ns

t

RSP

RESET# Setup Time for Temporary Sector
Unprotect

Min 4 µs

Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.

20514C-24

Figure 20. DQ2 vs. DQ6

Enter

Erase

Erase

Erase

Enter Erase

Suspend Program

Erase Suspend

Read

Erase Suspend

Read

Erase

WE#

DQ6

DQ2

Erase

Complete

Erase

Suspend

Suspend

Program

Resume

Embedded

Erasing

RESET#

t

VIDR

12 V

0 or 3 V

CE#

WE#

RY/BY#

t

VIDR

t

RSP

Program or Erase Command Sequence

0 or 3 V

20514C-25

Figure 21. Temporary Sector Unprotect Timing Diagram

Am29LV400 34

PRELIMINARY

AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

Parameter

-90R -100 -120 -150JEDEC Std. Description Unit

t

AVAV

t

WC

Write Cycle Time (Note 1) Min 90 100 120 150 ns

t

AVEL

t

AS

Address Setup Time Min 0 ns

t

ELAX

t

AH

Address Hold Time Min 50 50 50 65 ns

t

DVEH

t

DS

Data Setup Time Min 50 50 50 65 ns

t

EHDX

t

DH

Data Hold Time Min 0 ns

t

OES

Output Enable Setup Time Min 0 ns

t

GHEL

t

GHEL

Read Recovery Time Before Write
(OE# High to WE# Low)

Min 0 ns

t

WLEL

t

WS

WE# Setup Time Min 0 ns

t

EHWH

t

WH

WE# Hold Time Min 0 ns

t

ELEH

t

CP

CE# Pulse Width Min 50 50 50 65 ns

t

EHEL

t

CPH

CE# Pulse Width High Min 30 30 30 35 ns

t

WHWH1

t

WHWH1

Programming Operation
(Note 2)

Byte Typ 9

µs

Word Typ 11

t

WHWH2

t

WHWH2

Sector Erase Operation (Note 2) Typ 0.7 sec

35 Am29LV400

PRELIMINARY

AC CHARACTERISTICS

t

GHEL

t

WS

OE#

CE#

WE#

RESET#

t

DS

Data

t

AH

Addresses

t

DH

t

CP

DQ7# D

OUT

t

WC

t

AS

t

CPH

PA

Data# Polling

A0 for program
55 for erase

t

RH

t

WHWH1 or 2

RY/BY#

t

WH

PD for program
30 for sector erase
10 for chip erase

555 for program
2AA for erase

PA for program
SA for sector erase
555 for chip erase

t

BUSY

Notes:

1. P A = program address, PD = program data, DQ7# = complement of the data written to the device, D

OUT

= data written to the

device.

2. Figure indicates the last two bus cycles of the command sequence.

3. Word mode address used as an example.

20514C-26

Figure 22. Alternate CE# Controlled Write Operation Timings

Am29LV400 36

PRELIMINARY

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°

C, 3.0 V VCC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V

CC

= 2.7 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.

6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 100,000 cycles are guaranteed.

LATCHUP CHARACTERISTICS

Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.

TSOP AND SO PIN CAPACITANCE

Notes:

1. Sampled, not 100% tested.

2. Test conditions T

A

= 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter Typ (Note 1) Max (Note 2) Unit Comments

Sector Erase Time 0.7 15 s

Excludes 00h programming
prior to erasure (Note 4)

Chip Erase Time 11 s
Byte Programming Time 9 300 µs

Excludes system level
overhead (Note 5)

Word Programming Time 11 360 µs
Chip Programming Time

(Note 3)

Byte Mode 4.5 13.5 s

Word Mode 2.9 8.7 s

Description Min Max

Input voltage with respect to V

SS

on all pins except I/O pins

(including A9, OE#, and RESE T#)

–1.0 V 12.5 V

Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V
V

CC

Current –100 mA +100 mA

Parameter

Symbol Parameter Description Test Setup Typ Max Unit

C

IN

Input Capacitance VIN = 0 6 7.5 pF

C

OUT

Output Capacitance V

OUT

= 0 8.5 12 pF

C

IN2

Control Pin Capacitance VIN = 0 7.5 9 pF

Parameter Test Conditions Min Unit

Minimum Pattern Data Retention Time

150°C 10 Years
125°C 20 Years

37 Am29LV400

PRELIMINARY

PHYSICAL DIMENSIONS*

TS 048—48-Pin Standard TSOP (measured in millimeters)

* For reference only. BSC is an ANSI standard for Basic Space Centering.

TSR048—48-Pin Reverse TSOP (measured in millimeters)

* For reference only. BSC is an ANSI standard for Basic Space Centering.

48

25

1

24

18.30

18.50

19.80

20.20

11.90

12.10

0.05

0.15

0.50 BSC

0.95

1.05

16-038-TS48-2
TS 048
DT95
8-8-96 lv

Pin 1 I.D.

1.20
MAX

0.50

0.70

0.10

0.21

0.25MM (0.0098") BSC

0˚
5˚

0.08

0.20

48

25

1

24

18.30

18.50

19.80

20.20

11.90

12.10

SEATING PLANE

0.05

0.15

0.50 BSC

0.95

1.05

16-038-TS48
TSR048
DT95
8-8-96 lv

Pin 1 I.D.

1.20

MAX

0.50

0.70

0.10

0.21

0.25MM (0.0098") BSC

0˚
5˚

0.08

0.20

Am29LV400 38

PRELIMINARY

PHYSICAL DIMENSIONS
8 x 6 Fine-Pitch Ball Grid Array (FBGA) (measured in millimeters)

5.80

6.20

7.80

8.20

DATUM B

DATUM A

INDEX

0.025

CHAMFER

0.15

M

Z

B

M

0.15

M

Z

B

M

5.60

BSC

0.40

4.00
BSC

0.08

M

ZA

B

0.10 Z

0.25

0.45

0.80

DETAIL A

0.20 Z

DETAIL A

1.20 MAX

0.40 ± 0.08 (48x) 0.40

16-038-FGA-2
EG137
12-2-97 lv

39 Am29LV400

PRELIMINARY

PHYSICAL DIMENSIONS

SO 044—44-Pin Small Outline Package (measured in millimeters)

44

23

1

22

13.10

13.50

15.70

16.30

1.27 NOM.

28.00

28.40

2.17

2.45

0.35

0.50

0.10

0.35

2.80

MAX.

SEATING
PLANE

16-038-SO44-2
SO 044
DF83
8-8-96 lv

0.10

0.21

0.60

1.00

0˚
8˚

END VIEW

SIDE VIEW

TOP VIEW

Am29LV400 40

PRELIMINARY

REVISION SUMMARY FOR AM29LV400
Revision C

Added FBGA package. Formatted for consistency with
other current 5.0 volt-only data sheets.

Revision C+1

DC Characteristics

Changed Note 1 to indicate that OE# should be at V

IH

.

AC Characteristics

Erase/Program Operations; Altern ate CE# Controlled
Erase/Program Operations:

Corrected the notes refer-

ence for t

WHWH1

and t

WHWH2

. These parameters are

100% tested. Corrected the note reference for t

VCS

.

This parameter is not 100% tested.

Temporary Sector Unprotect Table

Added note reference for t

VIDR

. This parameter is not

100% tested.

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