Datasheet AM29LV200T-150EI, AM29LV200T-150EEB, AM29LV200T-150EE, AM29LV200T-150ECB, AM29LV200T-150EC Datasheet (AMD Advanced Micro Devices)

PRELIMINARY

Am29LV200

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-onl y Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high
performance 3.3 volt microprocessors

■ High performance

— Full voltage range: access times as fast as 100

ns

— Regulated voltage range: access times as fast as

90 ns

■ Ultra low power consumption (typical v alues at 5

MHz)

— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

Sectors can be locked via programming

equipment

Temporary Sector Unprotec t feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any
combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Typical 1,000,000 write cycles per sector

(100,000 cycles minimum guaranteed)

■ Package option

— 48-pin TSOP
— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being
erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Publication# 20513 Rev: D Amendment/+1
Issue Date: March 1998

PRELIMINARY

GENERAL DESCRIPTION

The Am29LV200 is a 2 Mbit, 3.0 volt-only Flash
memory organized as 262,144 bytes or 131,072 words.
The device is offer ed in 44-pin S O and 48-pin TSO P
packages. The word-wide data (x16) appears on

DQ15–DQ0; the byte-wide (x8) data appears on DQ7–
DQ0. This device is designed to be programmed in­system using only a single 3.0 volt V
is required for write or erase operations. The device
can also be programmed i n standard EPROM pro­grammers.

The standard device offers access times of 90, 100,
120, and 150 ns, allowing high speed microprocessors
to operate without wait states. To eliminate bus conten­tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.

The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally gener­ated and regulated voltages are provided for the
program and erase operations.

The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com­mands are written to the command register using
standard micropr ocessor write ti mings. Register c on­tents serve as input to an i nternal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and dat a needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.

Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto­matically times the program pulse widths and verifies
proper cell margin.

Device erasure occurs by executing the erase com­mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically pre­programs the array (if it is not already programmed) be­fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.

supply. No V

CC

PP

The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by re ading the DQ7 (D ata# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.

The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.

Hardware data protection measures include a low

detector that automatically inhibits write opera-

V

CC

tions during p ower transitions. The hardware sector
protection feature disables both program and erase

operations in any combination of the sectors of mem­ory. This can be achieved via programming equipment.

The Erase Sus pend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.

The device offers two pow er-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.

AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective­ness. The device e lectrically erases a ll b its wit hin
a sector simultaneously via Fowler-Nordheim tun­neling. The data is programmed using hot electron
injection.

Am29LV200 2

PRELIMINARY

PRODUCT SELECTOR GUIDE

Family Part Number Am29LV200

Speed Options

Max access time, ns (t
Max CE# access time, ns (tCE) 90 100 120 150
Max OE# access time, ns (tOE) 40 40 50 55

Regulated Voltage Range: VCC =3.0–3.6 V -90R

Full Voltage Range: VCC = 2.7–3.6 V -100 -120 -150

) 90 100 120 150

ACC

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

DQ0

DQ15 (A-1)

–

Input/Output

Buffers

Data

Latch

V

CC

V

SS

RESET#

WE#

BYTE#

CE#

OE#

RY/BY#

State

Control

Command

Register

PGM Voltage

Generator

Sector Switches

Erase Voltage

Generator

Chip Enable

Output Enable

Logic

STB

A0–A16

VCC Detector

Timer

STB

Address Latch

Y-Decoder

X-Decoder

Y-Gating

Cell Matrix

20513D-1

3 Am29LV200

CONNECTION DIAGRAMS

PRELIMINARY

A15
A14
A13
A12
A11
A10

A9

A8
NC
NC

WE#

RESET#

NC
NC

RY/BY#

NC
NC

A7

A6

A5

A4

A3

A2

A1

A16

BYTE#

V

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

V

CE#

SS

CC

SS

A0

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24

Standard TSOP

Reverse TSOP

48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25

48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25

A16
BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4

V

CC

DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#

V

SS

CE#
A0

A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
NC
A7
A6
A5
A4
A3
A2
A1

20513D-2

Am29LV200 4

CONNECTION DIAGRAMS

PRELIMINARY

1

NC
NC

A7
A6
A5
A4
A3
A2
A1
A0

CE#

V

SS

OE#
DQ0
DQ8
DQ1
DQ9
DQ2

DQ3

2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20
21
22

RY/BY#

DQ10
DQ11

PIN CONFIGURATION

A0–A16 = 17 addresses
DQ0–DQ14 = 15 data inputs/outputs
DQ15/A-1 = DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)

SO

44

RESET#

43

WE#

42

A8

41

A9

40

A10

39

A11

38

A12

37

A13

36

A14

35

A15

34

A16

33

BYTE#

32

V

SS

DQ15/A-1

31

DQ7

30

DQ14

29

DQ6

28

DQ13

27

DQ5

26

DQ12

25

DQ4

24

V

23

CC

LOGIC SYMBOL

17

A0–A16

20513D-3

16 or 8

DQ0–DQ15

(A-1)

BYTE# = Selects 8-bit or 16-bit mode
CE# = Chip enable
OE# = Output enable
WE# = Write enable
RESET# = Hardware reset pin, active low
RY/BY# = Ready/Busy# output

= 3.0 volt-only single power supply

V

CC

(see Product Selector Guide for speed
options and voltage supply tolerances)

V

SS

= Device ground

NC = Pin not connected internally

CE#
OE#

WE#
RESET#
BYTE# RY/BY#

20513D-4

5 Am29LV200

PRELIMINARY

ORDERING INFORMATION
Standard Pr od ucts

AMD standard products are available in several packages and operating ranges. The order number (Valid Combi­nation) is formed by a combination of the elements below.

CE-90RAm29LV200 T

OPTIONAL PROCESSING

Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)

TEMPERATURE RANGE

C=Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)

PACKAGE TYPE

E = 48-Pin Thin Small Outline Package (TSOP)

Standard Pinout (TS 048)

F = 48-Pin Thin Small Outline Package (TSOP)

Reverse Pinout (TSR048)

Am29LV200T-90R,
Am29LV200B-90R

Am29LV200T-100,
Am29LV200B-100

Am29LV200T-120,
Am29LV200B-120

Am29LV200T-150,
Am29LV200B-150

Valid Combinations

EC, EI, FC, FI, SC, SI

EC, EI, EE,

FC, FI, FE,
SC, SI, SE

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top Sector
B = Bottom Sector

DEVICE NUMBER/DESCRIPTION

Am29LV200
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory

3.0 Volt-only Read, Program, and Erase

Valid Combinations

Valid Combinations list configurations planned to be sup­ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.

Am29LV200 6

PRELIMINARY

DEVICE BUS OPERATIONS

This section describes the re quirements and us e of the
device bus operations, which are initiated through the
internal command register . The command register itself
does not occupy any ad dressable memory locatio n.
The register is composed of latches that store the com­mands, along with the address and data information
needed to execute the command. The contents of the

Table 1. Am29LV200 Device Bus Operations

Operation CE# OE# WE# RESET#

Read L L H H A

Write L H L H A

±

V

CC

Standby
Output Disable L H H H X High-Z High-Z High-Z

Reset X X X L X High-Z High-Z High-Z
T emporary Sector Unprotect X X X V

Legend:

L = Logic Low = V

Note: Addresses are A16:A0 in word mode (BYTE# = V

, H = Logic High = VIH, VID = 12.0 ± 0.5 V , X = Don’t Care, AIN = Addresses In, DIN = Data In, D

IL

0.3 V

XX

VCC ±

0.3 V

ID

), A16:A-1 in byte mode (BYTE# = VIL).

IH

register serve as inputs to the internal state machine.
The state machine outputs d ictate the function of the
device. Table 1 lists the device bus operations, the in­puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.

DQ8–DQ15

OUT

D

D

BYTE#

= V

IH

D

OUT

D

IN

IN

IN

D

IN

Addresses

(See Note)

IN
IN

X High-Z High-Z High-Z

A

IN

DQ0–

DQ7

D

BYTE#

= V

DQ8–DQ14 = High-Z,

DQ15 = A-1

High-Z

= Data Out

OUT

IL

Word/Byte Configuration

The BYTE# pin controls whether the device data I/O

pins DQ15–DQ0 operate in the byte or word configura­tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active an d c ontrol­led by CE# and OE#.

If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 ar e ac­tive and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.

Requirements for Reading Array Data

To read array data from the outputs, the system must
drive the CE# and OE# pins to V
control and selects the device. OE# is the output con­trol and gates array data to the output pins. WE#
should remain at V

. The BYTE# pin determines

IH

whether the device outputs array data in words or
bytes.

The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory con­tent occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addr esses
on the device address inputs produce valid data on the
device data outpu ts. The device rem ains enabled for

. CE# is the power

IL

read access until the command register contents are
altered.

See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica­tions and to Figure 12 for the timing diagram. I

CC1

in

the DC Characteristics table represents the active cur­rent specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which in­cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V

For program op erations, the BYTE# pin deter mines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more in­formation.

An erase operation can erase one sector, multiple sec­tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector ad­dress” consists of the address b its requ ired to uni quely
select a sector. See the “Command Definitions” section
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.

After the system writes the autoselect command se­quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-

, and OE# to VIH.

IL

7 Am29LV200

PRELIMINARY

nal register (which is separate from the memory array)

on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.

in the DC Characteristics table represents the ac-

I

CC2

tive current specification for the write mode . The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, t he system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I

CC

read specificat ions apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris­tics” for timing diagrams.

Standby Mode

When the system is not reading or writing to the device,
it can place the device in the standby mo de. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde­pendent of the OE# input.

The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V

CC

± 0.3 V.

(Note that this is a more restricted voltage range than

.) If CE# and RESET# are held at VIH, but not within

V

IH

± 0.3 V , t he device will be in the standby mode, but

V

CC

the standby current will be greater . The devi ce requires
standard access time (t

) for read access when the

CE

device is in either of these standby modes, before it is
ready to read data.

If the device is deselected during erasure or program­ming, the device draws active current until the
operation is completed.

In the DC Characteristics table, I

CC3

and I

CC4

repre-

sents the standby current specifications.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addresses rema in stable for

+ 30 ns. The automatic sleep mode is inde-

t

ACC

pendent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data

when addresses are changed. While in sleep mode,
output data is latched and always available to the
system. I

in the DC Characteristics table represents

CC5

the automatic sleep mode current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset­ting the device to reading array data. When the
RESET# pin is driven to V

for at least a period of tRP,

IL

the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state
machine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to
ensure data integrity.

Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
draws CMOS standby current (I

but not within VSS±0.3 V , the standby current will

at V

IL

±0.3 V, the device

SS

). If RESET# is held

CC4

be greater.
The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up
firmware from the Flash memory.

If RESET# is asserted during a program or erase oper­ation, the RY/BY# pin remains a “0” (busy) until the in­ternal reset operation is complete, which re quires a
time of t

(during Embedded Algorithms). The

READY

system can thus monitor RY/BY# to determine whether
the reset operation is co mplete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset opera tion is completed
within a time of t

READY

rithms). The system can read data t
SET# pin returns to V

(not during Embedded Algo-

after the RE -

.

IH

RH

Refer to the AC Characteristics tables for RESET# pa­rameters and to Figure 13 for the timing diagram.

Output Disable Mode

When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high imped­ance state.

Am29LV200 8

PRELIMINARY

Table 2. Am29LV200T Top Boot Block Sector Address Table

Sector Size

(Kbytes/

Sector A16 A15 A14 A13 A12

SA0 0 0 X X X 64/32 00000h–0FFFFh 00000h–07FFFh
SA1 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh
SA2 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh
SA3 1 1 0 X X 32/16 30000h–37FFFh 18000h–1BFFFh
SA4 1 1 1 0 0 8/4 38000h–39FFFh 1C000h–1CFFFh
SA5 1 1 1 0 1 8/4 3A000h–3BFFFh 1D000h–1DFFFh
SA6 1 1 1 1 X 16/8 3C000h–3FFFFh 1E000h–1FFFFh

Kwords)

Address Range (in hexadecim al )

(x8)

Address Range

Address Range

(x16)

Table 3. Am29LV200B Bottom Boot Block Sector Address Table

Sector Size

(Kbytes/

Sector A16 A15 A14 A13 A12

SA0 0 0 0 0 X 16/8 00000h–03FFFh 00000h–01FFFh
SA1 0 0 0 1 0 8/4 04000h–05FFFh 02000h–02FFFh
SA2 0 0 0 1 1 8/4 06000h–07FFFh 03000h–03FFFh
SA3 0 0 1 X X 32/16 08000h–0FFFFh 04000h–07FFFh
SA4 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh
SA5 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh
SA6 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh

Kwords)

Address Range (in hexadecim al )

(x8)

Address Range

Address Range

(x16)

Note for Tables 2 and 3: Address range is A16:A-1 in byte mode and A16:A0 in word mode. See “Word/Byte Configuration”

section for more information.

Autoselect Mode

The autoselect mode provides manu facturer and de­vice identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding progra mming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.

When using programming equipment, the autoselect
mode requires V

(11.5 V to 12.5 V) on address pin

ID

A9. Address pins A6, A1, and A0 must be as shown in
Table 4. In addition, when verifying sector protection,

the sector address must appear on the appropriate
highest order address bits (see Tables 2 and 3). Table
4 shows the remaining address bits that are don’t care.
When all necessary bits have be en set as required, the
programming equipment may then read the corre­sponding identifier code on DQ7–DQ0.

To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require V

. See “Command Definitions” for

ID

details on using the autoselect mode.

9 Am29LV200

Table 4. Am29LV200 Autoselect Codes (High Voltage Method)

Description Mode CE# OE# WE#

PRELIMINARY

A16

to

A12

A11

to

A10 A9

A8

to

A7 A6

A5

to

A2 A1 A0

DQ8

to

DQ15

DQ7

to

DQ0

Manufacturer ID: AMD L L H X X V
Device ID:

Am29LV200
(Top Boot Block)

Device ID:
Am29LV200
(Bottom Boot
Block)

Sector Protection Verification L L H SA X V

L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.

Word L L H

XXV

Byte L L H X 3Bh

Word L L H

XXV

Byte L L H X BFh

XLXLL X 01h

ID

XLXLH

ID

XLXLH

ID

XLXHL

ID

Sector Protection/Unprotection

The hardware sector protection feature disables both
program and erase operations in any sec tor. The hard­ware sector unprotection feature re-enables both pro­gram and erase operations in pre viously protected
sectors.

Sector protection/unprotection must be implemented
using programming equipment.The procedure requires
a high voltage (V
tails on this method are provided in a supplement, pub­lication number 21226. Contact an AMD representative
to request a copy.

The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Service. Contact a n
AMD representative for details.

) on address pin A9 and OE#. De-

ID

22h 3Bh

22h BFh

X

X

START

RESET# = V

(Note 1)

Perform Erase or

Program Operations

RESET# = V

Temporary Sector

Unprotect Completed

(Note 2)

ID

IH

01h

(protected)

00h

(unprotected)

It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.

Temporary Sector Unprotect

This feature allows temporary unp rotection of previ­ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE­SET# pin to V
sectors can be programmed or erased by selecting the
sector addres ses. Once V
SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 21 shows the timing diagrams, for this feature.

. During this mode, formerly protected

ID

is removed from the RE-

ID

Am29LV200 10

Notes:

20513D-5

1. All protected sectors unprotected.

2. All previously protected sectors are protected once
again.

Figure 1. Temporary Sector Unprotect Operation

PRELIMINARY

Hardware Data Protection

The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes ( refer to Table 5 for com­mand definitions). In add ition, the following hardwar e
data protection measures preve nt accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V

power-up

CC

and power-down transitions, or from system noise.

Low V

When V
cept any write cycles. This protects data during V

Write Inhibit

CC

is less than V

CC

, the device does not ac-

LKO

CC

power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
is greater than V

. The system must provide the

LKO

CC

proper signals to the control pins to prevent uninten­tional writes when V

is greater than V

CC

LKO

.

COMMAND DEFINITIONS

Writing specific address and data command s or se­quences into the command register initiates device op­erations. Table 5 defines the valid register command
sequences. Writing incorrect address and data val-
ues or writing them in the improper sequence resets
the device to reading array data.

All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

Reading Array Data

The device is a utomatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Em bedded Program or Em­bedded Erase algorithm.

After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys­tem can read array data using the standard read tim­ings, except that if it reads at an address within erase­suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See “Erase Sus­pend/Erase Resume Commands” for more information
on this mode.

must

The system
ble the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com­mand” section, next.

issue the reset command to re-ena-

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =

, CE# = VIH or WE# = VIH. To initiate a write cycle,

V

IL

CE# and WE# must be a logical zero wh ile OE# is a
logical one.

Power-Up Write Inhibit

If WE# = CE# = V

and OE# = VIH during power up, the

IL

device does not accept commands on the rising edge
of WE#. The internal state machin e is automatically
reset to reading array data on power-up.

See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame­ters, and Figure 12 shows the timing diagram.

Reset Command

Writing the reset command to the device resets the de­vice to reading array data. Address bits are don’t care
for this command.

The reset command may be written between the se­quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig­nores reset commands until the operation is complete.

The reset command may be written between the se­quence cycles in a program command sequence be­fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.

The reset command may be written between the se­quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
be written to return to reading array data (also applies
to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operat ion,
writing the reset command returns the device to read­ing array data (also applies during Erase Suspend).

must

11 Am29LV200

PRELIMINARY

Autoselect Command Sequence

The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements.
This method is an alternative to that shown in Table 4,
which is intended for PROM programmers and requires

on address bit A9.

V

ID

The autoselect command sequence is initiated by writ­ing two unlock cycles, followed by the autoselect com­mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command sequence.

A read cycle at address XX00h retrieves the manufac­turer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code. A
read cycle containing a sector address (SA) and the
address 02h in wor d mode (or 04h i n byte mode) re­turns 01h if that sector is protected, or 00h if it is unpro­tected. Refer to Tables 2 and 3 for valid sector
addresses.

The system must write the reset command to exit the
autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program­ming is a four-bus-cycle operation. The program com­mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program addre ss and data are writte n next, which in
turn initiate the Embedded Program algorithm. The

not

system is
ings. The device automatically provides internally gen­erated program pulses and verifies the programmed
cell margin. Table 5 shows the address and data re­quirements for the byte program command sequence.

When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad­dresses are no longer latched. The system can deter­mine the status of th e program operation by usin g

DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.

Any commands written to the device during the Em­bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program­ming operation. The program command sequence
should be reinitiated once the device has reset to read­ing array data, to ensure data integrity.

Programming is allowed in any s equence and across
sector boundaries. A bit cannot be programmed

from a “0” back to a “1”. Attempting to do so may halt

the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was suc -

required to provide further controls or ti m-

cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.

Figure 2 illustrates the algorithm for the program oper­ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 16 for
timing diagrams.

START

Write Program

Command Sequence

Data Poll

Embedded

Program

algorithm

in progress

Increment Address

Note: See Table 5 for program command sequence.

No

from System

Verify Data?

Yes

Last Address?

Yes

Programming

Completed

No

20513D-5

Figure 2. Program Operation

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase
command sequence is ini tiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase

not

algorithm. The device does
preprogram prior to erase. The Embedded Erase algo­rithm automatically preprograms and verifi es the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con­trols or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.

require the system to

Am29LV200 12

PRELIMINARY

Any commands written to the chip during the Embed­ded Erase algorithm are ignored. Note that a har dware
reset during the chip erase operation immediately ter­minates the operation. The Chip Erase command se­quence should be reinitiated once the device has
returned to reading array data, to ensure data int egrity.

The system can determine the status of the erase op­eration by using DQ7, DQ6, DQ2, or RY/BY#. See

“Write Operation Status” for information on these sta­tus bits. When the Embedded Erase algorithm is com­plete, the device returns to reading array data and
addresses are no longer latched.

Figure 3 illustrates the algorithm for the erase opera­tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.

Sector Erase Command Sequence

Sector erase is a six bus c ycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad­ditional unlock write cycles are then followed b y the ad­dress of the sector to be erased, and the sector erase
command. Table 5 shows the address and data re­quirements for the sector erase command sequence.

not

The device does
the memory prior to erase. The Embedded Erase algo­rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any c ontrols or tim­ings during these operations.

After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com­mands may be written. Loading the sect or er ase buf fer
may be done in any sequence, and the number of sec­tors may be from one sector to all s ectors. The time be­tween these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during t his time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other

than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence

and any additional sector addresses and commands.

require the system to preprogram

Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the op­eration. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.

When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta­tus of the erase operation by u sing DQ7, DQ6, DQ2, or
RY/BY#. (Refer to “Write Operation Status” for informa­tion on these status bits.)

Figure 3 illustrates the algorithm for the erase opera­tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 17 for timing diagrams.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to in­terrupt a sector erase operatio n and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase com mand sequence. The
Erase Suspend com mand is ignored if written during
the chip erase operation or Embedded Program algo­rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad­dresses are “don’t-cares” when writing the Erase Sus­pend command.

When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter­minates the time-out period and suspends the erase
operation.

After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec­tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.

The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the ris­ing edge of the final WE# pulse in the command se­quence.

13 Am29LV200

After an erase-suspended program operation is com­plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation us ing the DQ7 or DQ6

PRELIMINARY

status bits, just as in the standard program operation.

See “Write Operation Status” for more information.
The system may also write the autoselect command

sequence when the devic e is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing secto rs, since the
codes are no t stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Auto select Command Sequence ”
for more information.

The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de­vice has resumed erasing.

START

Write Erase

Command Sequence

Data Poll

from System

No

Data = FFh?

Erasure Completed

Embedded
Erase
algorithm
in progress

Yes

20513D-6

Notes:

1. See Table 5 for erase command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 3. Erase Operation

Am29LV200 14

PRELIMINARY

Table 5. Am29LV200 Command Definitions

Command

Sequence

(Note 1)

Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0

Manufacturer ID

Device ID,
Top Boot Block

Device ID,
Bottom Boot Block

Autoselect (Note 8)

Sector Protect Verify
(Note 9)

Program

Chip Erase

Sector Erase
Erase Suspend (Note 10) 1 XXX B0

Erase Resume (Note 11) 1 XXX 30

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA AAA 555 AAA

Word

Byte AAA 555 AAA AAA 555

Legend:

X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.

Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.

First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Cycles

555

4

555

4

555

4

555

4

555

4

555

6

555

6

AA

AA

AA

AA

AA

AA

AA

2AA

2AA

2AA

2AA

2AA

2AA

2AA

Bus Cycles (Notes 2–5)

55

55

55

55

55

55

55

555

555

555

555

555

555

555

90 X00 01

X01 223B

90

X02

X01 22BF

90

X02 BF

(SA)

X02

90

(SA)

X04

A0 PA PD

555

80

555

80

3B

XX00
XX01

00
01

AA

AA

2AA

2AA

555

55

55 SA 30

PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.

SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.

10

Notes:

1. See Table 1 for description of bus operations.

8. The fourth cycle of the autoselect command sequence is a

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles

9. The data is 00h for an unprotected sector and 01h for a

are write operations.

4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.

10. The system may read and program in non-erasing sectors, or

5. Address bits A16–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.

6. No unlock or command cycles required when reading array
data.

11. The Erase Resume command is valid only during the Erase

7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status da ta).

15 Am29LV200

read cycle.

protected sector. See “Autoselect Command Sequence” for
more information.

enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.

Suspend mode.

PRELIMINARY

WRITE OPERATION STATUS

The device provides several bits to determine the sta­tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 6 and the following subsections de­scribe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host sys­tem whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command se­quence.

During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro­grammed to DQ7. This DQ7 status also applies to pro­gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector , Data# Polling on DQ7 is active for ap­proximately 1 µs, then the device returns to reading

array data.

No

START

Read DQ7–DQ0

Addr = VA

DQ7 = Data?

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

Yes

During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase al­gorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true da tum output
described for the Embedded Program algorithm: the
erase function changes al l the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status in­formation on DQ7.

After an erase command sequence is written, if all sec­tors selected for erasing are p rotected, Data# Polling
on DQ7 is active for approximately 100 µs, t hen the de­vice returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se­lected sectors that are protected.

When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the

following

read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 18, Data#
Polling Timings (During Embedded Algorithms), in the
“AC Characteristics” section illustrates this.

DQ7 = Data?

No

FAIL

Notes:

1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because

DQ7 may change simultaneously with DQ5.

Yes

PASS

20513D-7

Figure 4. Data# Polling Algorithm

Table 6 shows the outputs for Data# Polling on DQ7.
Figure 4 shows the Data# Polling algorithm.

Am29LV200 16

PRELIMINARY

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid af ter
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev­eral RY/BY# pins can be tied together in parallel with a
pull-up resistor to V

If the output is low (Busy), the device is actively erasing
or programming. (T his includes programmin g in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.

Table 6 shows the outputs for RY/BY#. Figures 12, 13,
16 and 17 shows RY/BY# for read, reset , program, and
erase operations, respectively.

CC

.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whe ther an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase op­eration), and during the sector erase time-out.

During an Embedded Program or Erase algorithm op­eration, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.

Table 6 shows the outputs for Toggle Bit I on DQ6.
Refer to Figure 5 for the toggle bit algorithm and to Fig­ure 19 in the “AC Characteristics” section for the toggle
bit timing diagrams. Figure 20 shows the differences
between DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indi­cates whether a pa rticular sector is ac tively erasing
(that is, the Embedded Erase algorithm i s in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.

DQ2 toggles w hen the system reads at addresses
within those sectors that have been selected for eras­ure. (The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish whether
the sector is actively erasing or is erase-suspended.
DQ6, by comparison, i ndicates whether the device is
actively erasing, or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and mode
information. Refer to Table 6 to compare outputs for
DQ2 and DQ6.

Figure 5 sho ws the toggle bit alg orithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the “DQ6: Toggle Bit I” subsection.
Refer to Figure 19 shows the toggle bit timing diagram.
Figure 20 shows the differences between DQ2 and
DQ6 in graphical form.

After an erase command sequence is written, if all sec­tors selected for erasing are protected, DQ6 toggles for

approximately 100 µs, the n returns to reading array
data. If not all selected sectors are protected, the Em­bedded Erase algorithm erases the unprotected sec­tors, and ignores the selected sectors that are
protected.

The system can use DQ6 and DQ2 together to deter­mine whether a sector is actively erasing or is erase­suspended. When the device is actively erasing (that
is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on “DQ7: Data# Polling”).

If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.

DQ6 also toggl es during the e rase-suspend-pro gram
mode, and stops toggling once the Embedded Pro­gram algorithm is complete.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 5 for th e following discussion. W hen­ever the system initially begins reading toggle bit sta­tus, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Ty pically , the
system would note and store the value of the togg le bit
after the first read. After the second read, the system
would compare the new value of the toggle bi t with the
first. If the toggle bit is not toggling, the device has com­pleted the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read cy­cle.

However, if af ter the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys­tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system
must write the reset command to return to reading
array data.

17 Am29LV200

PRELIMINARY

The remaining scenario is that the system initially de­termines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to mo nitor the
toggle bit and DQ5 through successive read cycles, de­termining the status as described in the previous para­graph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation (top of Figure 5).

START

Read DQ7–DQ0

(Note 1)

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.

The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously
programmed to “0.” Only an erase op eration can

change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation has

exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue

the reset command to return the device to readin g
array data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase time r
does not apply to the chip erase command.) If addi­tional sectors are selected for erasure, the entire time­out also applies after each additional sector erase com­mand. When the time-out is complete, DQ3 switches
from “0” to “ 1.” The system may ignore DQ3 if the sys­tem can guarantee that the time between additional
sector erase commands will alw ays be less than 50
µs. See also the “Sector Erase Command Sequence”
section.

After the sector erase command sequ ence is written,
the system should read the status on DQ7 (Data# Poll­ing) or DQ6 (Toggle Bit I) to ensure the device has ac­cepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has be­gun; all further commands (other than Erase Su spend)
are ignored until the erase ope ration is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command h as been
accepted, the system software should check the s tatus
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last co mmand might not hav e been ac­cepted. Table 6 shows the outputs for DQ3.

Read DQ7–DQ0

Toggle Bit

= Toggle?

Yes

No

Notes:

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1” . See text.

DQ5 = 1?

Yes

Read DQ7–DQ0

Twice

Toggle Bit

= Toggle?

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

No

(Notes
1, 2)

No

Program/Erase

Operation Complete

20513D-8

Figure 5. Toggle Bit Algorithm

Am29LV200 18

PRELIMINARY

Table 6. Write Operation Status

DQ7

Standard
Mode

Erase
Suspend
Mode

Operation

Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0
Reading within Erase

Suspended Sector
Reading within Non-Erase

Suspended Sector
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0

(Note 2) DQ6

1 No toggle 0 N/A Toggle 1

Data Data Data Data Data 1

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

DQ5

(Note 1) DQ3

DQ2

(Note 2) RY/BY#

19 Am29LV200

PRELIMINARY

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

Ambient Temperature

with Power Applied . . . . . . . . . . . . . –65°C to +125°C

Voltage with Respect to Ground

(Note 1) . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

V

CC

A9, OE#, and

RESET# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V

All other pins (Note 1) . . . . . –0.5 V to V

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V . During
voltage transitions, input or I/O pins may undershoot V
to –2.0 V for periods of up to 20 ns. Maximum DC voltage
on input or I/O pins is V
transitions, input or I/O pins may overshoot to V
for periods up to 20 ns. See Figure 6 and Figure 7.

2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may undershoot V
to 20 ns. See Figure 6. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to 14.0 V for periods
up to 20 ns.

3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.

Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.

+0.5 V. During voltage

CC

to –2.0 V for periods of up

SS

CC

CC

+0.5 V

SS

+2.0 V

20 ns

+0.8 V

–0.5 V
–2.0 V

20 ns

Figure 6. Maximum Negative Overshoot

20 ns

20513D-9

Waveform

20 ns

V

CC

+2.0 V

V

CC

+0.5 V

2.0 V
20 ns

20 ns

20513D-10

Figure 7. Maximum Positive Overshoot

Waveform

OPERATING RANGES

Commercial (C) Devices

Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C

Industrial (I) Devices

Ambient Temperature (T

Extended (E) Devices

Ambient Temperature (T

Supply Voltages

V

CC

VCC for regulated voltage range. . . . .+3.0 V to +3.6 V

for full voltage range. . . . . . . . . .+2.7 V to +3.6 V

V

CC

Operating ranges define those limits between which the func­tionality of the device is guaranteed.

) . . . . . . . . . –40°C to +85°C

A

) . . . . . . . . –55°C to +125°C

A

Am29LV200 20

PRELIMINARY

DC CHARACTERISTICS
CMOS Compatible

Parameter Description Test Conditions Min Typ Max Unit

= VSS to VCC,

V

IN

V

= VCC

CC

CC max

= VSS to VCC,

V

OUT

V

= V

CC

CC max

CE# = V

IL,

Byte Mode

CE# = V

IL,

Word Mode

max

±1.0 µA

; A9 = 12.5 V 35 µA

±1.0 µA

OE#

= VIH,

5 MHz 10 16
1 MHz 2 4

OE#

= VIH,

5 MHz 9 16
1 MHz 2 4

I

I

I

CC1

I

LIT

LO

LI

Input Load Current

A9 Input Load Current VCC = V

Output Leakage Current

VCC Active Read Current
(Note 1)

mA

V
V

V

I

CC2

I

CC3

I

CC4

I

CC5

V
V

V

V

IL

IH

ID

OL

OH1

OH2

LKO

VCC Active Write Current
(Notes 2 and 4)

VCC Standby Current

VCC Standby Current During
Reset

Automatic Sleep Mode (Note 3)

Input Low Voltage –0.5 0.8 V
Input High Voltage 0.7 x V
Voltage for Autoselect and

Temporary Sector Unprotect
Output Low Voltage IOL = 4.0 mA, VCC = V

Output High Voltage

Low VCC Lock-Out Voltage
(Note 4)

CE# = V

V

CC

CE#, RESET# = V
VCC = V

RESET# = V
V

IH

V

IL

= V

= V
= V

IL,

CC max

CC max

CC

± 0.3 V

SS

OE#

= VIH

;

;

± 0.3 V

SS

± 0.3 V;

CC

±0.3 V

VCC = 3.3 V 11.5 12.5 V

0.45 V

CC min

I

= –2.0 mA, VCC = V

OH

IOH = –100 µA, VCC = V

CC min

CC min

0.85 V
VCC–0.4

2.3 2.5 V

Notes:

1. The I

2. I

current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.

CC

active while Embedded Erase or Embedded Program is in progress.

CC

3. Automatic sleep mode enables the low power mode when addresses remain stable for t

4. Not 100% tested.

CC

CC

ACC

20 30 mA

0.2 5 µA

0.2 5 µA

0.2 5 µA

VCC + 0.3 V

V

+ 30 ns.

21 Am29LV200

DC CHARACTERISTICS (continued)
Zero Power Flash

25

20

15

10

Supply Current in mA

5

0

0 500 1000 1500 2000 2500 3000 3500 4000

PRELIMINARY

Time in ns

Note: Addresses are switching at 1 MHz

Figure 8. I

Current vs. Time (Showing Active and Automatic Sleep Currents)

CC1

15

10

5

Supply Current in mA

0

1 2345

3

Frequency in MHz

V

6

.

V

7

2.

20513D-11

Note: T = 25 °C

Figure 9. Typical I

Am29LV200 22

vs. Frequency

CC1

20513D-12

TEST CONDITIONS

Device

Under

Test

C

L

6.2 kΩ

PRELIMINARY

3.3 V

2.7 kΩ

Table 7. Test Specifications

-90R,

Test Condition

Output Load 1 TTL gate
Output Load Capacitance, C

(including jig capacitance)
Input Rise and Fall Times 5 ns
Input Pulse Levels 0.0–3.0 V

-100

L

30 100 pF

-120,

-150 Unit

Note: Diodes are IN3064 or equivalent

Figure 10. Test Setup

KEY TO SWITCHING WAVEFORMS

WAVEFORM INPUTS OUTPUTS

Don’t Care, Any Change Permitted Changing, State Unknown

Does Not Apply Center Line is High Impedance State (High Z)

20513D-13

Input timing measurement
reference levels

Output timing measurement
reference levels

Steady

Changing from H to L

Changing from L to H

1.5 V

1.5 V

KS000010-PAL

3.0 V

0.0 V

1.5 V 1.5 V

Figure 11. Input Waveforms and Measurement Levels

23 Am29LV200

OutputMeasurement LevelInput

20513D-14

AC CHARACTERISTICS
Read Operations

PRELIMINARY

Parameter

JEDEC Std Test Setup

t

AVAV

t

AVQV

t

ELQV

t

GLQV

t

EHQZ

t

GHQZ

Description

t

Read Cycle Time (Note 1) Min 90 100 120 150 ns

RC

t

Address to Output Delay

ACC

t

Chip Enable to Output Delay OE# = V

CE

t

Output Enable to Output Delay Max 40 40 50 55 ns

OE

t

Chip Enable to Output High Z (Note 1) Max 30 30 30 40 ns

DF

t

Output Enable to Output High Z (Note 1) Max 30 30 30 40 ns

DF

CE# = V
OE# = V

IL
IL

IL

Read Min 0 ns

Output Enable

t

OEH

Hold Time (Note 1)

Toggle and
Data# Polling

Output Hold Time From Addresses, CE# or

t

AXQX

t

OH

OE#, Whichever Occurs First (Note 1)

Notes:

1. Not 100% tested.

2. See Figure 10 and Table 7 for test specifications.

t

RC

Speed Option

-90R -100 -120 -150 Unit

Max 90 100 120 150 ns

Max 90 100 120 150 ns

Min 10 ns

Min 0 ns

Addresses

CE#

OE#

WE#

Outputs

RESET#

RY/BY#

0 V

Addresses Stable

t

ACC

t

OE

t

OEH

t

CE

HIGH Z

Output Valid

Figure 12. Read Operations Timings

t

DF

t

OH

HIGH Z

20513D-15

Am29LV200 24

AC CHARACTERISTICS
Hardware Reset (RESET#)

Parameter

Description All Speed OptionsJEDEC Std Test Setup Unit

PRELIMINARY

READY

READY

t

RP

t

RH

t

RPD

t

RB

RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)

RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)

RESET# Pulse Width Min 500 ns
RESET# High Time Before Read (See Note) Min 50 ns
RESET# Low to Standby Mode Min 20 µs
RY/BY# Recovery Time Min 0 ns

t

t

Note: Not 100% tested.

RY/BY#

CE#, OE#

RESET#

t

RP

t

Ready

Max 20 µs

Max 500 ns

t

RH

RY/BY#

CE#, OE#

RESET#

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t

Ready

t

RP

Figure 13. RESET# Timings

t

RB

20513D-16

25 Am29LV200

AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)

Parameter

PRELIMINARY

-90R -100 -120 -150JEDEC Std. Description Unit

t

ELFL/tELFH

t

FLQZ

t

FHQV

BYTE#

Switching

from word

to byte

mode

CE# to BYTE# Switching Low or High Max 5 ns
BYTE# Switching Low to Output HIGH Z Max 30 30 30 40 ns
BYTE# Switching High to Output Active Min 90 100 120 150 ns

CE#

OE#

BYTE#

t

DQ0–DQ14

DQ15/A-1

ELFL

t

ELFH

Data Output

(DQ0–DQ14)

DQ15

Output

t

FLQZ

Data Output

(DQ0–DQ7)

Address

Input

BYTE#

BYTE#

Switching

from byte

to word

DQ0–DQ14

Data Output
(DQ0–DQ7)

mode

DQ15/A-1

Address

Input

t

FHQV

Figure 14. BYTE# Timings for Read Operations

CE#

The falling edge of the last WE# signal

WE#

BYTE#

t

SET

(tAS)

t

HOLD

(tAH)

Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.

Figure 15. BYTE# Timings for Write Operations

Data Output

(DQ0–DQ14)

DQ15

Output

20513D-17

20513D-18

Am29LV200 26

AC CHARACTERISTICS
Erase/Program Operations

Parameter

t

t

AVAV

t

AVWL

t

WLAX

t

DVWH

t

WHDX

t

t

GHWL

t

ELWL

t

WHEH

t

WLWH

t

WHWL

t

WHWH1tWHWH1

t

GHWL

t

Write Cycle Time (Note 1) Min 90 100 120 150 ns

WC

t

Address Setup Time Min 0 ns

AS

t

Address Hold Time Min 50 50 50 65 ns

AH

t

Data Setup Time Min 50 50 50 65 ns

DS

t

Data Hold Time Min 0 ns

DH

Output Enable Setup Time Min 0 ns

OES

Read Recovery Time Before Write
(OE# High to WE# Low)

t

CE# Setup Time Min 0 ns

CS

t

CE# Hold Time Min 0 ns

CH

t

Write Pulse Width Min 50 50 50 65 ns

WP

Write Pulse Width High Min 30 30 30 35 ns

WPH

Programming Operation (Note 2)

PRELIMINARY

-90R -100 -120 -150JEDEC Std. Description Unit

Min 0 ns

Byte Typ 9

µs

Word Typ 11

t

WHWH2tWHWH2

t

t

BUSY

Sector Erase Operation (Note 2) Typ 1 sec
VCC Setup Time (Note 1) Min 50 µs

VCS

Recovery Time from RY/BY# Min 0 ns

t

RB

Program/Erase Valid to RY/BY# Delay Min 90 ns

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

27 Am29LV200

AC CHARACTERISTICS

Program Command Sequence (last two cycles)

PRELIMINARY

Read Status Data (last two cycles)

Addresses

CE#

OE#

WE#

Data

RY/BY#

V

CC

t

VCS

t

WC

555h

t

GHWL

t

CS

t

WP

t

DS

A0h

t

AS

PA PA

t

AH

t

CH

t

WHWH1

t

WPH

t

DH

PD

t

BUSY

PA

Status

D

OUT

t

RB

Notes:

1. PA = program address, PD = program data, D

2. Illustration shows device in word mode.

Figure 16. Program Operation Timings

is the true data at the program address.

OUT

20513D-19

Am29LV200 28

AC CHARACTERISTICS

Erase Command Sequence (last two cycles) Read Status Data

PRELIMINARY

Addresses

CE#

OE#

WE#

Data

RY/BY#

V

CC

t

VCS

t

WC

2AAh SA

555h for chip erase

t

GHWL

t

CH

t

WP

t

t

CS

t

DS

t

WPH

DH

55h

t

AS

t

AH

30h

10 for Chip Erase

t

BUSY

t

WHWH2

VA

In

Progress

VA

Complete

t

RB

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

2. Illustration shows device in word mode.

Figure 17. Chip/Sector Erase Operation Timings

20513D-20

29 Am29LV200

AC CHARACTERISTICS

Z

Z

Addresses

t

CE#

t

CH

OE#

t

OEH

WE#

DQ7

ACC

t

CE

t

RC

VA

t

OE

PRELIMINARY

t

DF

t

OH

Complement

VA VA

Complement

True

Valid Data

High

DQ0–DQ6

t

BUSY

Status Data

Status Data

True

Valid Data

High

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.

20513D-21

Figure 18. Data# Polling Timings (During Embedded Algorithms)

t

RC

Addresses

CE#

OE#

WE#

DQ6/DQ2

RY/BY#

t

CH

t

BUSY

t

OEH

High Z

t

ACC

VA

t

CE

t

OE

t

DF

t

OH

(first read) (second read) (stops toggling)

VA VA

Valid Status

VA

Valid DataValid StatusValid Status

Note: V A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.

20513D-22

Figure 19. Toggle Bit Timings (During Embedded Algorithms)

Am29LV200 30

PRELIMINARY

AC CHARACTERISTICS

Enter

Embedded

Erasing

WE#

DQ6

DQ2

Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.

Erase

Erase

Suspend

Erase Suspend

Enter Erase

Suspend Program

Read

Figure 20. DQ2 vs. DQ6

Erase

Suspend

Program

Erase Suspend

Read

Erase

Resume

Erase

Erase

Complete

20513D-23

Temporary Sector Unprotect

Parameter

All Speed OptionsJEDEC Std. Description Unit

t

VIDR

t

RSP

Note: Not 100% tested.

12 V

RESET#

0 or 3 V

CE#

WE#

RY/BY#

VID Rise and Fall Time (See Note) Min 500 ns
RESET# Setup Time for Temporary Sector

Unprotect

Min 4 µs

0 or 3 V

t

VIDR

t

VIDR

Program or Erase Command Sequence

t

RSP

20513D-24

Figure 21. Temporary Sector Unprotect Timing Diagram

31 Am29LV200

PRELIMINARY

AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations

Parameter

-90R -100 -120 -150JEDEC Std. Description Unit

t

AVAV

t

AVEL

t

ELAX

t

DVEH

t

EHDX

t

GHEL

t

WLEL

t

EHWH

t

ELEH

t

EHEL

t

WHWH1

t

WHWH2

t

WC

t

AS

t

AH

t

DS

t

DH

t

OES

t

GHEL

t

WS

t

WH

t

CP

t

CPH

t

WHWH1

t

WHWH2

Write Cycle Time (Note 1) Min 90 100 120 150 ns
Address Setup Time Min 0 ns
Address Hold Time Min 50 50 50 65 ns
Data Setup Time Min 50 50 50 65 ns
Data Hold Time Min 0 ns
Output Enable Setup Time Min 0 ns
Read Recovery Time Before Write

(OE# High to WE# Low)

Min 0 ns

WE# Setup Time Min 0 ns
WE# Hold Time Min 0 ns
CE# Pulse Width Min 50 50 50 65 ns
CE# Pulse Width High Min 30 30 30 35 ns

Programming Operation
(Note 2)

Byte Typ 9

Word Typ 11

Sector Erase Operation (Note 2) Typ 1 sec

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

µs

Am29LV200 32

AC CHARACTERISTICS

PRELIMINARY

Addresses

WE#

OE#

CE#

Data

RESET#

555 for program
2AA for erase

t

WC

t

WH

t

WS

t

RH

PA for program
SA for sector erase
555 for chip erase

t

AS

t

GHEL

t

CP

t

CPH

t

DS

t

DH

A0 for program
55 for erase

t

AH

t

BUSY

PD for program
30 for sector erase
10 for chip erase

Data# Polling

t

WHWH1 or 2

PA

DQ7# D

OUT

RY/BY#

Notes:

1. P A = program address, PD = program data, DQ7# = complement of the data written to the device, D
device.

2. Figure indicates the last two bus cycles of the command sequence.

3. Word mode address used as an example.

Figure 22. Alternate CE# Controlled Write Operation Timings

= data written to the

OUT

20513D-25

33 Am29LV200

PRELIMINARY

ERASE AND PROGRAMMING PERFORMANCE

Parameter Typ (Note 1) Max (Note 2) Unit Comments

Sector Erase Time 1 15 s
Chip Erase Time 7 s
Byte Programming Time 9 300 µs

Word Programming Time 11 360 µs
Chip Programming Time

(Note 3)

Byte Mode 2.3 6.8 s

Word Mode 1.5 4.3 s

Excludes 00h programming
prior to erasure (Note 4)

Excludes system level
overhead (Note 5)

Notes:

1. Typical program and erase times assume the following conditions: 25

°

C, 3.0 V VCC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V

= 2.7 V, 100,000 cycles.

CC

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.

6. The device has a typical erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Description Min Max

Input voltage with respect to V
(including A9, OE#, and RESE T#)

on all pins except I/O pins

SS

–1.0 V 12.5 V

Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V

Current –100 mA +100 mA

V

CC

Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol Parameter Description Test Setup Typ Max Unit

Input Capacitance VIN = 0 6 7.5 pF

Output Capacitance V

Control Pin Capacitance VIN = 0 7.5 9 pF

= 0 8.5 12 pF

OUT

C

C

C

OUT

IN2

IN

Notes:

1. Sampled, not 100% tested.

2. Test conditions T

= 25°C, f = 1.0 MHz.

A

DATA RETENTION

Parameter Test Conditions Min Unit

Minimum Pattern Data Retention Time

150°C 10 Years
125°C 20 Years

Am29LV200 34

PRELIMINARY

PHYSICAL DIMENSIONS*

TS 048—48-Pin Standard TSOP (measured in millimeters)

Pin 1 I.D.

1

24

18.30

18.50

19.80

20.20

1.20
MAX

0.25MM (0.0098") BSC

* For reference only. BSC is an ANSI standard for Basic Space Centering.

48

25

0˚
5˚

0.50

0.70

11.90

12.10

0.08

0.20

0.10

0.21

0.95

1.05

SEATING PLANE

0.50 BSC

0.05

0.15

16-038-TS48
TSR048
DT95
8-8-96 lv

TSR048—48-Pin Reverse TSOP (measured in millimeters)

Pin 1 I.D.

1

24

18.30

18.50

19.80

20.20

1.20

MAX

0.25MM (0.0098") BSC

48

25

0˚
5˚

11.90

12.10

0.08

0.20

0.10

0.21

0.95

1.05

SEATING PLANE

0.50 BSC

0.05

0.15

16-038-TS48
TSR048
DT95
8-8-96 lv

* For reference only. BSC is an ANSI standard for Basic Space Centering.

35 Am29LV200

0.50

0.70

PRELIMINARY

PHYSICAL DIMENSIONS

SO 044—44-Pin Small Outline Package (measured in millimeters)

2.17

2.45

44

23

13.10

13.50

1

1.27 NOM.

TOP VIEW

28.00

28.40

0.35

0.50

SIDE VIEW

22

0.10

0.35

2.80

MAX.

15.70

16.30

SEATING
PLANE

0˚
8˚

0.10

0.21

0.60

1.00

END VIEW

16-038-SO44-2
SO 044
DF83
8-8-96 lv

Am29LV200 36

PRELIMINARY

REVISION SUMMARY FOR AM29LV200
Revision D

Global

Revised formatting to be consistent with other current

3.0 volt-only data sheets.

Revision D+1

DC Characteristics

Changed Note 1 to indicate that OE# is at V
listed current.

for the

IH

AC Characteristics

Erase/Program Operations; Altern ate CE# Controlled
Erase/Program Operations:

ence for t

WHWH1

and t

100% tested. Corrected the note reference for t

Corrected the notes refer-

WHWH2

. These parameters are

VCS

This parameter is not 100% tested.

Temporary Sector Unprotect Table

Added note reference for t

. This parameter is not

VIDR

100% tested.

.

Trademarks

Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

37 Am29LV200