Datasheet AM29F800BT-90SEB, AM29F800BT-90SE, AM29F800BT-90SCB, AM29F800BT-90SC, AM29F800BT-90FIB Datasheet (AMD Advanced Micro Devices)

PRELIMINARY

Am29F800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 5.0 Volt-only operation for read, erase, and

program operations

— Minimizes system level requirements

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F800 device

■ High performance

— Access times as fast as 55 ns

■ Low power consumption (typical values at 5

MHz)

— 1 µA standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked via programming

equipment

T emporary Sector Unprotect feat ure allows code

changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Al gorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any
combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 progr am/erase cycles per

sector guaranteed

■ Package option

— 48-pin TSOP
— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power-supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operati on to read dat a from,

or program data to, a sector that is not being
erased, then resumes the erase operation

■ Hardware reset p in (RESET#)

— Hardware method to reset the de vice t o reading

array data

Publication# 21504 Rev: C Amendment/+1
Issue Date: April 1998

PRELIMINARY

GENERAL DESCRIPTION

The Am29F800B is an 8 Mbit, 5.0 volt-only Flas h
memory organized as 1,048,576 bytes or 524,288
words. The device is offered in 44-pin SO and 48-pin
TSOP packages. The word-wide data (x16) appears on

DQ15–DQ0; the byte-wide (x8) data appears on DQ7–
DQ0. This device is designed to be programmed in­system with the standard system 5.0 volt V
A 12.0 V V

is not required for write or erase opera-

PP

tions. The device can also be programmed in standard
EPROM programmers.

This device is manufactured using AMD’s 0.35 µm
process technology, and off ers all the f eatures and ben­efits of the Am29F800, which was manufactured using

0.5 µm process technology.
The standard device offers access times of 55, 70, 90,

120, and 150 ns, allowing high speed microprocessors
to operate without wai t states . To eliminate b us conten­tion the device has separate chip enable (CE#), wr ite
enable (WE#) and output enable (OE#) controls.

The device requires only a single 5. 0 v o lt po wer sup-
ply for both read and wr ite functions. Internally gener­ated and regulated voltages are provided for the
program and erase operations.

The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com­mands are written to the command register using stan­dard microproc essor write timing s. Register contents
serve as input to an internal sta te-machine that co n­trols the erase and programming circuit ry. Write cycles
also internally latch addresses and data needed f or the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.

Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto­matically times the program pulse widths and verifies
proper cell margin.

Device erasure occurs by executing the erase com­mand sequence. This initiates the Embedded Erase
algorithm—an in ternal algorithm that autom atically

supply.

CC

preprograms the arra y (if it is not already progr ammed)
before e xecuting the er ase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.

The host system can detect whether a program or
erase operation is complete by obser ving the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.

The sector erase archite cture allo ws m emory sect ors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.

Hardware data protection measures include a low

detector that automatically in hibits write opera-

V

CC

tions during power transitions. The hardware sector
protection feature disables both program and erase

operations in any combination of the sectors of mem­ory . This can be achie v ed via prog ramming equipment.

The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any s ector that is not selected for
erasure. True background erase can thus be achie ved.

The hardware RESET# pi n terminates any operation
in progress and resets the internal state machine to
reading array dat a. The RESET# pin ma y be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.

The system can place the device into the standby
mode. Power consum ption is greatly reduced in
this mode.

AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost
effectiveness. The device electrically erases al l
bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is
programmed using hot electron injection.

2 Am29F800B

PRELIMINARY

PRODUCT SELECTOR GUIDE

Family Part Number Am29F800B

Speed Option

Max access time, ns (t
Max CE# access time, ns (tCE) 55 70 90 120 150
Max OE# access time, ns (tOE) 30 30 35 50 55

VCC = 5.0 V ± 5% -55

VCC = 5.0 V ± 10% -70 -90 -120 -150

) 55 70 90 120 150

ACC

Note: See “AC Character ist ics ” for full specifications.

BLOCK DIAGRAM

–

DQ15 (A-1)

STB

DQ0

Input/Output

Buffers

Data

Latch

V

CC

V

SS

RESET#

WE#

BYTE#

CE#

OE#

RY/BY#

State

Control

Command

Register

Sector Switches

Erase Voltage

Generator

PGM Voltage

Generator

Chip Enable

Output Enable

Logic

A0–A18

VCC Detector

Timer

STB

Address Latch

Y-Decoder

X-Decoder

Y-Gating

Cell Matrix

21504C-1

Am29F800B 3

CONNECTION DIAGRAMS

PRELIMINARY

A15
A14
A13
A12
A11
A10

A9

A8
NC
NC

WE#

RESET#

NC
NC

RY/BY#

A18
A17

A7

A6

A5

A4

A3

A2

A1

A16

BYTE#

V

SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V

CC

DQ11

DQ3

DQ10

DQ2
DQ9
DQ1
DQ8
DQ0

OE#

V

SS

CE#

A0

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24

48-Pin TSOP—Standard Pinout

48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25

48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25

A16
BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4

V

CC

DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#

V

SS

CE#
A0

A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1

48-Pin TSOP—Reverse Pinout

4 Am29F800B

21504C-2

CONNECTION DIAGRAMS

PRELIMINARY

SO

RY/BY#

A18
A17

A7
A6
A5
A4
A3
A2
A1
A0

CE#

V

OE#
DQ0
DQ8
DQ1
DQ9
DQ2

DQ10

DQ3

DQ11

SS

10
11
12
13
14
15
16
17
18
19
20
21
22

1
2
3
4
5
6
7
8
9

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V

CC

PIN CONFIGURATION

A0–A18 = 19 addresses
DQ0–DQ14 = 15 data inputs/outputs
DQ15/A-1 = DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)
BYTE# = Selects 8-bit or 16-bit mode
CE# = Chip enable
OE# = Output enable
WE# = Write enable
RESET# = Hardware reset pin, active low
RY/BY# = Ready/Busy# output

= +5.0 V single power supply

V

CC

V

SS

NC = Pin not connected internally

(see Product Selector Guide for

device speed ratings and voltage

supply tolerances)

= Device ground

LOGIC SYMBOL

19

A0–A18

CE#
OE#

WE#
RESET#
BYTE# RY/BY#

21504C-3

16 or 8

DQ0–DQ15

(A-1)

21504C-4

Am29F800B 5

PRELIMINARY

ORDERING INFORMATION
Standard Pr od ucts

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the elements below.

CE-70Am29F800B T

OPTIONAL PROCESSING

Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)

TEMPERATURE RANGE

C=Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)

PACKAGE TYPE

E = 48-Pin Thin Small Outline Package (TSOP)

Standard Pinout (TS 048)

F = 48-Pin Thin Small Outline Package (TSOP)

Reverse Pinout (TSR048)

S = 44-Pin Small Outline Package (SO 044)

Am29F800BT-55,
Am29F800BB-55

Am29F800BT- 70,
Am29F800BB-70

Am29F800BT-90,
Am29F800BB-90

Am29F800BT-120,
Am29F800BB-120

Valid Combinations

EC, EI, FC, FI, SC, SI

EC, EI, EE,

FC, FI, FE,
SC, SI, SE

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top Sector
B = Bottom Sector

DEVICE NUMBER/DESCRIPTION

Am29F800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory

5.0 Volt-only Read, Program, and Erase

Valid Combinations

Valid Combinations list configurations planned to be sup­ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.

Am29F800BT-150,
Am29F800BB-150

6 Am29F800B

PRELIMINARY

DEVICE BUS OPERATIONS

This section describes the requirements and use of the
device bus operations, which are initiated through the
internal c ommand register. The command register it­self does not occupy any addressable memory loca­tion. The register is composed of l atches that store the
commands, along with the address and data informa­tion needed to execute the command. The contents of

Table 1. Am29F800B Device Bus Operations

the register serve as inputs to the internal state ma­chine. The state machine outputs dictate the function of
the device. The appropriate device bus operations
table lists the inputs and control le vels requ ired, and the
resulting output. The following subsections describe
each of these operations in further detail.

DQ8–DQ15

OUT

D

D

BYTE#

= V

IH

High-Z
High-Z

IN

IN

X

BYTE#

Operation CE# OE# WE# RESET# A0–A18 DQ0–DQ7

Read L L H H A
Write L H L H A
CMOS Standby V

TTL Standby H X X H X High-Z High-Z High-Z
Output Disable L H H H X High-Z High-Z High-Z
Hardware Reset X X X L X High-Z High-Z High-Z
Temporary Sector Unprotect

(See Note)

Legend:

L = Logic Low = V

Note: See the sections on Sector Protection and Temporary Sector Unprotect for more information.

, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, D

IL

Word/Byte Configuration

The BYTE# pin controls whether the device data I/O

pins DQ15–DQ0 operate in the by te or word configur a­tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are activ e and c ontrol­led by CE# and OE#.

If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are ac­tive and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.

Requirements for Reading Array Data

To read array data from the outputs, the system must
drive the CE# and OE# pins to V
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should re­main at V

The internal state machin e is set for reading array
data upon device power-up, or after a hardware reset.
This ensures that no spurious alteration of the mem­ory content occurs during the power transition. No
command is necessar y in this mode to obtain array

.

IH

± 0.5 V X X VCC ± 0.5 V X High-Z High-Z High-Z

CC

XXX V

ID

sert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enable d for read access until the
command register contents are altered.

See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica­tions and to the Read Operations Timings diagram for
the timing waveforms. I

table represents the active current specification for
reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which in­cludes programming data to the device and erasing

. CE# is the power

IL

sectors of memory), the system must drive WE# and
CE# to V

, and OE# to VIH.

IL

An erase operation can erase one sect or, multiple sec­tors, or the entire de vice. The Sector Address Tabl es in­dicate the address space that each sector occupies. A
“sector address” consists of the address bits required
to uniquely select a sector. See the “Command Defini­tions” section for details on erasing a sector or the en­tire chip, or suspending/resuming the erase operation.

IN

IN

A

IN

D

OUT

D

IN

D

IN

= Data Out, AIN = Address In

OUT

in the DC Characteristics

CC1

= V

D

data. Standard microprocessor read cycles that as-

IL

Am29F800B 7

PRELIMINARY

After the system writes the autoselect command se­quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter­nal register (which is separate from the memory array)

on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.

in the DC Characteristics table represents the ac-

I

CC2

tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system ma y
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I

CC

read specifications apply. Refer to “Write Operation
Status” for more infor mation, and to each AC Charac­teristics section for timing diagrams.

Standby Mode

When the system is not reading or writing to the device ,
it can place the device in the standby mode. In this
mode, current consumption is great ly reduc ed, and the
outputs are placed in the high impedance state, inde­pendent of the OE# input.

The device enters the CMOS standby mode when CE#
and RESET# pins are both held at V
that this is a more restrict ed voltage range than V
The device enters the TTL standby mode when CE#
and RESET# pins are both held at V
quires standard access time (t

) for read access when

CE

the device is in either of these standb y modes, bef ore it
is ready to read data.

The device also enters the standb y mode when the RE­SET# pin is driven low. Refer to the next section, “RE­SET#: Hardware Reset Pin”.

If the device is deselected during erasure or program ­ming, the device draws active current until the
operation is completed.

± 0.5 V. (Note

CC

. The device re-

IH

IH

In the DC Characteristics tables, I

CC3

standby current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardw are method of reset­ting the device to readin g arr ay data. When the system
drives the RESET# pin low for at least a period of t
the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration o f the RESET#
pulse. The device also resets the inter nal state ma­chine to reading array data. The operation that was in­terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity.

Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V

, the device enters

IL

the TTL standby mode; if RESET# is held at V

0.5 V, the device enters the CMOS standby mode.
The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm­ware from the Flash memory.

If RESET# is asserted during a program or erase oper­ation, the RY/BY# pin remains a “0” (busy) until the in­ternal reset operatio n is complete, which requires a
time of t

(during Embedded Algorithms). The

READY

system can thus monitor RY/BY# to determine whether

.)

the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
rithms). The system can read data t
SET# pin returns to V

(not during Embe dded Algo-

READY

.

IH

RH

Refer to the AC Characteristics tables for RESET# pa­rameters and timing diagram.

Output Disable Mode

When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in t he high imped­ance state.

represents the

RP

SS

after the RE-

,

±

8 Am29F800B

PRELIMINARY

Table 2. Am29F800BT Top Boot Block Sector Address Table

Sector Size

(Kbytes/

Sector A18 A17 A16 A15 A14 A13 A12

SA0 0 0 0 0 X X X 64/32 00000h–07FFFh 00000h–0FFFFh
SA1 0 0 0 1 X X X 64/32 08000h–0FFFFh 10000h–1FFFFh
SA2 0 0 1 0 X X X 64/32 10000h–17FFFh 20000h–2FFFFh
SA3 0 0 1 1 X X X 64/32 18000h–1FFFFh 30000h–3FFFFh
SA4 0 1 0 0 X X X 64/32 20000h–27FFFh 40000h–4FFFFh
SA5 0 1 0 1 X X X 64/32 28000h–2FFFFh 50000h–5FFFFh
SA6 0 1 1 0 X X X 64/32 30000h–37FFFh 60000h–6FFFFh
SA7 0 1 1 1 X X X 64/32 38000h–3FFFFh 70000h–7FFFFh
SA8 1 0 0 0 X X X 64/32 40000h–47FFFh 80000h–8FFFFh

SA9 1 0 0 1 X X X 64/32 48000h–4FFFFh 90000h–9FFFFh
SA10 1 0 1 0 X X X 64/32 50000h–57FFFh A0000h–AFFFFh
SA11 1 0 1 1 X X X 64/32 58000h–5FFFFh B0000h–BFFFFh
SA12 1 1 0 0 X X X 64/32 60000h–67FFFh C0000h–CFFFFh
SA13 1 1 0 1 X X X 64/32 68000h–6FFFFh D0000h–DFFFFh

Kwords)

Address Range (in hexadecim al )

(x16)

Address Range

(x8)

Address Range

SA14 1 1 1 0 X X X 64/32 70000h–77FFFh E0000h–EFFFFh
SA15 1 1 1 1 0 X X 32/16 78000h–7BFFFh F0000h–F7FFFh
SA16 1 1 1 1 1 0 0 8/4 7C000h–7CFFFh F8000h–F9FFFh
SA17 1 1 1 1 1 0 1 8/4 7D000h–7DFFFh FA000h–FBFFFh
SA18 1 1 1 1 1 1 X 16/8 7E000h–7FFFFh FC000h–FFFFFh

Note:

Address range is A18:A-1 in byte mode and A18:A0 in word mode. See “Word/Byte Configuration” section for more information.

Am29F800B 9

PRELIMINARY

Table 3. Am29F800BB Bottom Boot Block Sector Address Table

Sector Size

(Kbytes/

Sector A18 A17 A16 A15 A14 A13 A12

SA0000000X 16/8 00000h–01FFFh 00000h–03FFFh

SA1 0 0 0 0 0 1 0 8/4 02000h–02FFFh 04000h–05FFFh

SA2 0 0 0 0 0 1 1 8/4 03000h–03FFFh 06000h–07FFFh

SA3 0 0 0 0 1 X X 32/16 04000h–07FFFh 08000h–0FFFFh

SA4 0 0 0 1 X X X 64/32 08000h–0FFFFh 10000h–1FFFFh

SA5 0 0 1 0 X X X 64/32 10000h–17FFFh 20000h–2FFFFh

SA6 0 0 1 1 X X X 64/32 18000h–1FFFFh 30000h–3FFFFh

SA7 0 1 0 0 X X X 64/32 20000h–27FFFh 40000h–4FFFFh

SA8 0 1 0 1 X X X 64/32 28000h–2FFFFh 50000h–5FFFFh

SA9 0 1 1 0 X X X 64/32 30000h–37FFFh 60000h–6FFFFh
SA10 0 1 1 1 X X X 64/32 38000h–3FFFFh 70000h–7FFFFh
SA11 1 0 0 0 X X X 64/32 40000h–47FFFh 80000h–8FFFFh
SA12 1 0 0 1 X X X 64/32 48000h–4FFFFh 90000h–9FFFFh
SA13 1 0 1 0 X X X 64/32 50000h–57FFFh A0000h–AFFFFh

Kwords)

Address Range (in hexadecim al )

(x16)

Address Range

(x8)

Address Range

SA14 1 0 1 1 X X X 64/32 58000h–5FFFFh B0000h–BFFFFh
SA15 1 1 0 0 X X X 64/32 60000h–67FFFh C0000h–CFFFFh
SA16 1 1 0 1 X X X 64/32 68000h–6FFFFh D0000h–DFFFFh
SA17 1 1 1 0 X X X 64/32 70000h–77FFFh E0000h–EFFFFh
SA18 1 1 1 1 X X X 64/32 78000h–7FFFFh F0000h–FFFFFh

Note:

Address range is A18:A-1 in byte mode and A18:A0 in word mode. See “Word/Byte Configuration” section for more information.

Autoselect Mode

The autoselect mode provides manufacturer and de­vice identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This
mode is primarily intended for progr amming equipment
to automatically match a device to be progr ammed with
its correspondi ng programming al gorithm. However,
the autoselect codes can also be accessed in-system
through the command register.

When using programming equipment, the autoselect
mode requires V

(11.5 V to 12.5 V) on address pin

ID

A9. Address pins A6, A1, and A0 must be as shown in
Autoselect Codes (High Voltage Method) table. I n addi­tion, when verifying sector protection, the sector ad-

dress must appear on the appropriate highest order
address bits. Refer to the corresponding Sector Ad­dress Tables. The Comm and Definitions table shows
the remaining address bits that are don’t c are. When all
necessary bits have been set as required, the program­ming equipment may then read the corresponding
identifier code on DQ7–DQ0.

To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in the C ommand Defini­tions table. This method does not require V

. See

ID

“Command Definitions” for details on using the autose­lect mode.

10 Am29F800B

PRELIMINARY

Table 4. Am29F800B Autoselect Codes (High Voltage Method)

Description Mode CE# OE# WE#

A18

to

A12

A11

to

A10 A9

A8

to

A7 A6

A5

to

A2 A1 A0

DQ8

to

DQ15

DQ7

to

DQ0

Manufacturer ID: AMD L L H X X V
Device ID:

Am29F800B
(Top Boot Block)

Device ID:
Am29F800B
(Bottom Boot Block)

Sector Protection Verification L L H SA X V

L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.

Word L L H

XXV

Byte L L H X D6h

Word L L H

XXV

Byte L L H X 58h

XLXLL X 01h

ID

XLXLH

ID

XLXLH

ID

XLXHL

ID

Sector Protection/Unprotection

The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables both
program and erase operations in previously pro­tected sectors.

Sector protection/unprotection must be implemented
using programming equipment. The procedure re­quires a high voltage (V
control pins. Details on this method are provided in a
supplement, publication number 20374. Contact an
AMD representative to obtain a cop y of the appropriate
document.

) on address pin A9 and the

ID

22h D6h

22h 58h

X

X

START

RESET# = V

(Note 1)

Perform Erase or

Program Operations

RESET# = V

ID

IH

01h

(protected)

00h

(unprotected)

The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Servic e. Contact an
AMD representative for details.

It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.

Temporary Sector Unprotect

This feature allows temporary unprotection of previ­ously protected sectors to change data in-system.
The Sector Unprotect mode is acti v ated b y setti ng the
RESET# pin to V
tected sectors can be programmed or erased by se­lecting the sector addresses. Once V
from the RESET# pin, all the previously protected
sectors are protec ted again. Figure 1 shows the algo­rithm, and the Temporar y Sector Unprotect diagram
shows the timing wavefor ms, for this feature.

. During this mode, formerly pro-

ID

is removed

ID

Am29F800B 11

Temporary Sector

Unprotect

Completed (Note 2)

21504C-5

Notes:

1. All protected sectors unprotected.

2. All previously protected sectors are protected once
again.

Figure 1. Temporary Sector Unprotect Operation

PRELIMINARY

Hardware Data Protection

The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi­nitions table). In addition, the following hardware data
protection measures pre vent accidental eras ure or pro­gramming, which might otherwise be caus ed by spuri­ous system level signals during V

power-up and

CC

power-down transitions, or from system noise.

Low V

When V
cept any write cycles. This protects data during V

Write Inhibit

CC

is less than V

CC

, the device does not ac-

LKO

CC

power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
is greater than V

. The system must provide the

LKO

CC

COMMAND DEFINITIONS

Writing specific addre ss and data commands or se­quences into the command register initiates device op­erations. The Command Definitions table defines the
valid register command sequences. Writing incorrect

address and data values or writing them in the im-
proper sequence resets the device to reading array

data.
All addresses are latched on the falling edge of WE# or

CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

proper signals to the control pins to prevent uninten­tional writes when V

is greater than V

CC

LKO

.

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =

, CE# = VIH or WE# = VIH. To initiate a write cycle,

V

IL

CE# and WE# must be a logical zero while OE# is a
logical one.

Power-Up Write Inhibit

If WE# = CE# = V

and OE# = VIH during power up , the

IL

device does not accept commands on the rising edge
of WE#. The internal state mac hine is automatically
reset to reading array data on power-up.

ters, and Read Operation T imings diagram shows the
timing diagram.

Reset Command

Writing the reset command to the devi ce resets the de­vice to reading array data. Address bits are don’t care
for this command.

The reset command may be written between the se­quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig­nores reset commands until the operation is complete.

Reading Array Data

The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after comp leting an Embe dded Program or Em­bedded Erase algorithm.

After the device accepts an Er ase Suspend command,
the device enters the Erase Suspend m ode. The sys­tem can read array data using the standard read tim­ings, except that if it reads at an address within erase­suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once agai n read arra y
data with the same exception. See “Erase Sus­pend/Erase Resume Commands” for more information
on this mode.

must

The system
able the dev ice f or reading arra y data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com­mand” section, next.

See also “Requirements for Reading Arr a y Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-

issue the reset command to re-en-

The reset command may be written between the se­quence cycles in a program command sequence be­fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.

The reset command may be written between the se­quence cycles in an autoselect command sequence.
Once in the autoselect mode, t he reset c ommand

must

be written to return to reading array data (also applies
to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read­ing array data (also applies during Erase Suspend).

12 Am29F800B

PRELIMINARY

Autoselect Command Sequence

The autoselect command sequence allows the host
system to access the manufacturer and devices codes ,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM program­mers and requires V

on address bit A9.

ID

The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autos elect
command. The device then en ters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.

A read cycle at address XX00h or retrieves the manu­facturer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code.
A read cycle containing a sector address (SA) and the
address 02h in word mode (or 04h in byte mode) re­turns 01h if that sector is protected, or 00h if it is un­protected. Ref e r t o the Se cto r Ad dre ss tables for valid
sector addresses.

The system must write the reset command to exit the
autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

The system may program the device by byte or word,
on depending on the state of the BYTE# pin. Program­ming is a four-bus-cycle operation. The program com­mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The

not

system is
ings. The device automatically provides internally gen­erated program pulses and verify the programmed cell
margin. The Command Definitions take shows the ad­dress and data requirements f or the byte prog ram com­mand sequence.

When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad­dresses are no longer latched. The system can deter­mine the status of the program operation by using DQ7,

DQ6, or RY/BY#. See “Write Operation Status” for in­formation on these status bits.

Any commands written to the device dur ing the Em­bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program­ming operation. The program command sequenc e
should be reinitiated once the de vi ce has reset t o read­ing array data, to ensure data integrity.

Programming is allowed in any sequence an d across
sector boundaries. A bit cannot be programmed

from a “0” back to a “1”. Attempting to do so may halt

required to provide further controls or tim-

the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indic ate the operation was suc­cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.

START

Write Program

Command Sequence

Data Poll

Embedded

Program

algorithm

in progress

Increment Address

Note: See the appropriate Command Definitions table for
program command sequence.

No

from System

Verify Data?

Yes

Last Address?

Yes

Programming

Completed

No

21504C-6

Figure 2. Program Operation

Chip Erase Command Sequence

Chip erase is a six-bu s-cycle oper ation. The chip er ase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase

not

algorithm. The device does
preprogram prior to erase. The Embedded Erase algo­rithm automatically preprograms and verifies the entire
memory for an all zero data patter n prior to electr ical
erase. The system is not required to provide any con­trols or timings during these operations. The Command
Definitions table show s the address and data require­ments for the chip erase command sequence.

Any commands written to the chip during the Embed­ded Erase algorithm are ignored. Note that a ha rd ware

require the system to

Am29F800B 13

PRELIMINARY

reset during the chip erase operation immediately ter-

minates the operation. The Chip Erase command se­quence should be reinitiated once the device has
returned to reading array data, t o ensure data int eg rity.

The system can deter mine the status of the erase
operation by using DQ7, DQ6, DQ2, or RY/BY#. See

“Write Operation Status” for inform ation on these
status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data
and addresses are no longer latc hed.

Figure 3 illustrates the algorithm for the erase opera­tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters , and to the Chip/Sector
Erase Operation Timings for timing waveforms.

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two un­lock cycles, followed by a set-up command. Two addi­tional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. The Command Definitions table
shows the address and data requirements for the sec­tor erase command sequence.

not

The device does
the memory prior to erase. The Embedded Erase algo­rithm automatically programs and verifies the sector f or
an all zero data pattern prior to electrical erase. The
system is not required to provide a ny controls or tim­ings during these operations.

After the command sequence is written, a sector erase
time-out of 50 µs begins. Du ring the time-out per iod,
additional sector addresses and sector erase com­mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec­tors may be from one sector to all secto rs. The time be­tween these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disab led during this time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other

than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence

and any additional sector addresses and commands.

require the system to preprogram

are ignored. Note that a hardware reset during the
sector erase operation im mediately terminates the op­eration. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.

When the Embedded Erase algorithm is complete, the
device returns to reading arra y data and addr esses are
no longer latched. The system can determine the sta­tus of the erase operation b y using DQ7, DQ6, DQ2, or
RY/BY#. Refer to “Write Operation Status” for informa­tion on these status bits.

Figure 3 illustrates the algorithm for the erase opera­tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagr am for timing
waveforms.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows t he syste m to in­terrupt a sector erase ope ration and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sect or
erase operation, including the 50 µs time-out peri od
during the sector erase c ommand sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo­rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the er ase oper at ion. Ad­dresses are “don’t-cares” when writing the Erase Sus­pend command.

When the Erase Suspend command is written during a
sector erase operation, the de vice requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter­minates the time-out period and suspends the erase
operation.

After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasu re. (The de vice “er ase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec­tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.

The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sec tor Erase
Timer” section.) The time-out be gins from the rising
edge of the final WE# pulse in the command sequence .

Once the sector erase operation has begun, onl y the
Erase Suspend command is valid. All other commands

14 Am29F800B

After an erase-suspended program operation is com­plete, the system c an once again r ead arra y d ata within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper­ation. See “Write Operation Status” for more informa­tion.

PRELIMINARY

The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another

valid operation. See “Autoselect Command Sequence”
for more information.

The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operat ion. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de­vice has resumed erasing.

START

Write Erase

Command Sequence

Data Poll

from System

No

Data = FFh?

Erasure Completed

Embedded
Erase
algorithm
in progress

Yes

21504C-7

1. See the appropriate Command Definitions table for erase
command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 3. Erase Operation

Am29F800B 15

PRELIMINARY

Table 5. Am29F800B Command Definitions

Command

Sequence

(Note 1)

Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0

Manufacturer ID

Device ID,
Top Boot Block

Device ID,
Bottom Boot Block

Autoselect (Note 8)

Sector Protect Verify
(Note 9)

Program

Chip Erase

Sector Erase
Erase Suspend (Note 10) 1 XXX B0

Erase Resume (Note 11) 1 XXX 30

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA

Word

Byte AAA 555 AAA AAA 555 AAA

Word

Byte AAA 555 AAA AAA 555

Legend:

X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.

Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.

First Second Third Fourth Fifth Sixth

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Cycles

555

4

555

4

555

4

555

4

555

4

555

6

555

6

AA

AA

AA

AA

AA

AA

AA

2AA

2AA

2AA

2AA

2AA

2AA

2AA

Bus Cycles (Notes 2–5)

55

55

55

55

55

55

55

555

555

555

555

555

555

555

90 X00 01

X01 22D6

90

X02

X01 2258

90

X02 58

(SA)

X02

90

(SA)

X04

A0 PA PD

555

80

555

80

D6

XX00
XX01

00
01

AA

AA

2AA

2AA

555

55

55 SA 30

PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.

SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A12 uniquely select any sector.

10

Notes:

1. See Table 1 for description of bus operations.

8. The fourth cycle of the autoselect command sequence is a

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles

9. The data is 00h for an unprotected sector and 01h for a

are write operations.

4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.

10. The system may read and program in non-erasing sectors, or

5. Address bits A17–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.

6. No unlock or command cycles required when reading array
data.

11. The Erase Resume command is valid only during the Erase

7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status da ta).

16 Am29F800B

read cycle.

protected sector. See “Autoselect Command Sequence” for
more information.

enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.

Suspend mode.

PRELIMINARY

WRITE OPERATION STATUS

The device provides several bits to determine the sta­tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 6 and the following subsections de­scribe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for deter mining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.

DQ7: Data# Polling

The Data# Polling bit, DQ7, in dicates to the host
system whether an Embedded Algorithm is in
progress or completed, or whether the device is in
Erase Suspend. Data# P olling is v alid after the rising
edge of the final WE# pulse in the program or erase
command sequence.

During the Em bedded Program algor ithm, the device
outputs on DQ7 the complement of the datum pro­grammed to DQ7. This DQ7 status also applies to pro­gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for ap­proximately 2 µs, then the device returns to reading

array data.

No

START

Read DQ7–DQ0

Addr = VA

DQ7 = Data?

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

Yes

During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase al­gorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algor ithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” o r
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status in­formation on DQ7.

After an erase command sequence is written, if all s ec­tors selected for erasing are protected, Data# Polling
on DQ7 is active f or appro ximately 100 µs , the n the de­vice returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se­lected sectors that are protected.

When the system detects DQ7 has changed from the
complement to true data, it can read va lid data at DQ7–
DQ0 on the

following

read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. The Data# Poll­ing Timings (During Embedded Algorithms) figure in
the “AC Characteristics” section illustrates this.

DQ7 = Data?

No

FAIL

Notes:

1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because

DQ7 may change simultaneously with DQ5.

Yes

PASS

21504C-8

Figure 4. Data# Polling Algorithm

Table 6 shows the outputs for Data# Polling on D Q7.
Figure 4 shows the Data# Polling algorithm.

Am29F800B 17

PRELIMINARY

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev­eral RY/BY# pins can be tied together in parallel with a
pull-up resistor to V

If the output is low (Busy ), the de vice is activ ely er asing
or programming. (T his includes programming in the
Erase Suspend mode.) If th e output is high (Ready) ,
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.

Table 6 shows the outputs for RY/BY#. The timing dia­grams for read, reset, program, and erase shows the
relationship of RY/BY# to other signals.

CC

.

DQ6: Toggle Bit I

Toggle Bit I on D Q6 indicates whether a n Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or eras e op­eration), and during the s ector erase time-out.

The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 5 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the
“AC Characteristics” section for the timing diagram.
The DQ2 vs. DQ6 figure show s the differences be­tween DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indi­cates whether a par ticular sect or is actively erasing
(that is, the Embedded Erase algo rithm is in pro gress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of t he final WE# pulse in
the command sequence.

DQ2 toggles w hen the system reads at addresses
within those sector s that have been selected for era­sure. (The system may use either OE# or CE# to con­trol the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus­pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era­sure. Thus, both status bits are required for s ector and
mode information. Refer to Table 6 to compare outputs
for DQ2 and DQ6.

During an Embedded Program or Erase algorithm op­eration, successive read cyc les to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.

After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog­gles for appro xi mately 100 µ s , t hen returns to read ing

array data. If not all selected sectors are pro tected,
the Embedded Erase algorithm erases the unpro­tected sectors, and ignores the selected sectors that
are protected.

The system can use DQ6 and DQ2 together to deter­mine whether a sector is actively erasing or is erase­suspended. When the device is activ ely erasing (that is ,
the Embedded Erase algorithm is in progress), D Q6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on “DQ7: Data# Polling”).

If a program address falls within a pro tected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.

DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro­gram algorithm is complete.

Figure 5 shows the toggle bit algorithm in flowchar t
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the “DQ6: Toggle Bit I” subsection.
Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows t he dif­ferences between DQ2 and DQ6 in graphical f orm.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 5 for the follow ing discussion. When­ever the system initially begins reading toggle bit sta­tus, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, a
system would note a nd store th e val ue of the to ggle bit
after the first read. After the second read, the system
would compare the ne w v alue of the toggle bit with the
first. If the toggle bit is not to ggling, the device has
completed the program or erase operation. The sys­tem can read arra y data on DQ7–DQ0 on the f ollo wing
read cycle.

However, if after the initial two read cycles, the system
determines that the toggle bit is still toggli ng, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped tog­gling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully comp leted the
program or erase operation. If it is still toggling, the
device did not complete the oper ation successfully, and
the system must write the reset command to return to
reading array data.

18 Am29F800B

PRELIMINARY

The remaining scenario is that the system initially de­termines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through success ive read cycle s, de­termining the status as described in the previous para­graph. Alterna tively, it may choose to perform o ther
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation (top of Figure 5).

START

Read DQ7–DQ0

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure
condition that indicates the prog ram or er ase cycle was
not successfully completed.

The DQ5 failure condition may appear if the system
tries to program a “1” to a location that i s previously pro­grammed to “0.” Only an era se operation can change

a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has ex-

ceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, t he system must issue the

reset command to return the device to reading array
data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the
system may read DQ3 to det ermine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi­tional sectors are selec ted for er asure, th e entire time­out also applies after each add itional sector erase
command. When the time-out is complete, DQ3
switches from “0” to “1.” The system may ignore DQ3
if the system can guar antee t hat the time betw een ad­ditional sector erase commands will always be less
than 50 µs. Se e also th e “S ector Er ase Command Se­quence” section.

After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll­ing) or DQ6 (Toggle Bit I) to ensure the device has ac­cepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has be­gun; all further commands (other than Erase Su spend)
are ignored u ntil the erase operation is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should ch eck the s tatus
of DQ3 prior to and following each subsequent s ector
erase command. If DQ3 is high on the second status
check, the last command m ight not have been ac­cepted. Table 6 shows the outputs for DQ3.

Read DQ7–DQ0

Toggle Bit

= Toggle?

Yes

No

Notes:

1. Read toggle bit twice to determine whether or not it is
toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1”. See text.

DQ5 = 1?

Yes

Read DQ7–DQ0

Twice

Toggle Bit

= Toggle?

Yes

Program/Erase

Operation Not
Complete, Write
Reset Command

(Note 1)

No

(Notes
1, 2)

No

Program/Erase

Operation Complete

21504C-9

Figure 5. Toggle Bit Algorithm

Am29F800B 19

PRELIMINARY

Table 6. Write Operation Status

DQ7

Standard
Mode

Erase
Suspend
Mode

Operation

Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0
Reading within Erase

Suspended Sector
Reading within Non-Erase

Suspended Sector
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0

(Note 1) DQ6

1 No toggle 0 N/A Toggle 1

Data Data Data Data Data 1

Notes:

1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.

See “DQ5: Exceeded Timing Limits” for more information.

DQ5

(Note 2) DQ3

DQ2

(Note 1) RY/BY#

20 Am29F800B

PRELIMINARY

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

Ambient Temperature

with Power Applied. . . . . . . . . . . . . . –55°C to +125°C

Voltage with Respect to Ground

(Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V

V

CC

A9, OE#, and

RESET# (Note 2). . . . . . . . . . . .–2.0 V to +12.5 V

All other pins (Note 1) . . . . . . . . .–0.5 V to +7.0 V

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may undershoot V
to –2.0 V for periods of up to 20 ns. See Figure 6.
Maximum DC voltage on input or I/O pin s is V
During voltage transitions, input or I/O pins may overshoot
to V

+2.0 V for periods up to 20 ns. See Figure 7.

CC

2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may undershoot V
to 20 ns. See Figure 6. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to +13.5 V for periods
up to 20 ns.

3. No more than on e output may be shor te d to ground at a
time. Duration of the shor t circuit should not be greater
than one second.

Stresses above those listed under “Abs olute Maximum Rat­ings” may cause perm anent d amage to the de vice. This is a
stress rating only; funct iona l ope rat ion of the de vic e at the se
or any other conditions ab ove those indicated in the ope ra­tional sections o f this dat a sheet is not im plied. Exp osure of
the device to absolute maximum rating conditions for extend­ed periods may affect device reliability.

to –2.0 V for periods of up

SS

CC

SS

+0.5 V.

20 ns

+0.8 V

–0.5 V
–2.0 V

20 ns

20 ns

Figure 6. Maximum Negative Overshoot

Waveform

20 ns

V

CC

+2.0 V

V

CC

+0.5 V

2.0 V
20 ns

20 ns

Figure 7. Maximum Positive Overshoot

Waveform

21504C-10

21504C-11

OPERATING RANGES

Commercial (C) Devices

Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C

Industrial (I) Devices

Ambient Temperature (T

Extended (E) Devices

Ambient Temperature (T

Supply Voltages

V

CC

VCC for ± 5% devices. . . . . . . . . . .+4.75 V to +5.25 V

for± 10% de vices . . . . . . . . . . . .+4.5 V to +5.5 V

V

CC

Operating ranges define those limits between which the func­tionality of the device is guaranteed.

) . . . . . . . . . –40°C to +85°C

A

) . . . . . . . . –55°C to +125°C

A

Am29F800B 21

PRELIMINARY

DC CHARACTERISTICS
TTL/NMOS Compatible

Parameter Description Test Conditions Min Typ Max Unit

I

I

I

V

I

I

LIT

I

CC1

CC2

CC3

V

V

V

V
V

LKO

LI

LO

IH

ID

OL

OH

Input Load Current VIN = VSS to VCC, VCC = VCC

A9 Input Load Current VCC = V
Output Leakage Current V

= VSS to VCC, VCC = V

OUT

CE# = V

f

VCC Active Read Current
(Note 1)

VCC Active Write Current
(Notes 2 and 3)

VCC Standby Current

IL

Input Low Voltage –0.5 0.8 V

= 5 MHz, Byte Mode

CE# = V

f

= 5 MHz, Word Mode

CE# = V

CE#, OE#, and RESET# = V
VCC = V

; A9 = 12.5 V 35 µA

CC max

OE#

IL,

= VIH, VCC

OE#

IL,

= VIH, VCC

OE#

IL,

= VIH, VCC

,

CC max

= V

= V

= V

max

CC max

CC max

CC max

CC max

IH,

,

,

19 40 mA

19 50 mA

36 60 mA

0.4 1 mA

Input High Voltage 2.0

Voltage for Autoselect and
Temporary Sector Unprotect

Output Low Voltage IOL = 5.8 mA, VCC = V
Output High Voltage IOH = –2.5 mA, VCC = V
Low VCC Lock-Out Voltage

(Note 3)

V

= 5.0 V 11.5 12.5 V

CC

0.45 V

CC min

2.4 V

CC min

3.2 4.2 V

±1.0 µA

±1.0 µA

VCC

+ 0.5

V

Notes:

1. The I

2. I

current listed is typically less than 2 mA/MHz, with OE# at VIH.

CC

active while Embedded Erase or Embedded Program is in progress.

CC

3. Not 100% tested.

22 Am29F800B

PRELIMINARY

DC CHARACTERISTICS
CMOS Compatible

Parameter Description Test Conditions Min Typ Max Unit

= VSS to VCC,

V

I

I

LIT

I

I

CC1

LI

LO

Input Load Current

A9 Input Load Current

Output Leakage Current

VCC Active Read Current

IN

V

= VCC

CC

= V

V

CC

CC max

A9 = 12.5 V
V

= VSS to VCC,

OUT

V

= V

CC

CC max

CE# = V
VCC = V

IL,

CC max

Byte Mode
CE# = V

VCC = V

IL,

CC max

Word Mode

max

;

OE#

= VIH,

, f = 5 MHz

OE#

= VIH,

, f = 5 MHz

±1.0 µA

35 µA

±1.0 µA

20 40 mA

28 50 mA

V
V

V

I

CC2

I

CC3

V
V

V

V

OH1

OH2

LKO

OL

VCC Active Write Current
(Notes 1 and 2)

VCC Standby Current

IL

IH

ID

Input Low Voltage –0.5 0.8 V
Input High Voltage 0.7 x V
Voltage for Autoselect and

Temporary Sector Unprotect
Output Low Voltage IOL = 5.8 mA, VCC = V

Output High Voltage

Low VCC Lock-Out Voltage
(Note 2)

CE# = V
V

CC

= V

IL,

CC max

CE# and RESET# = V
OE# = V

, VCC = V

IH

VCC = 5.0 V 11.5 12.5 V

I

= –2.5 mA, VCC = V

OH

IOH = –100 µA, VCC = V

Notes:

1. I

active while Embedded Erase or Embedded Program is in progress.

CC

2. Not 100% tested.

OE#

= VIH

,

CC

CC max

CC min

CC min

CC min

30 50 mA

±0.5 V,

0.3 5 µA

CC

VCC + 0.3 V

0.45 V

0.85 V

CC

VCC–0.4 V

3.2 4.2 V

V

Am29F800B 23

TEST CONDITIONS

Device

Under

Test

C

L

6.2 kΩ

PRELIMINARY

5.0 V

2.7 kΩ
Output Load 1 TTL gate

Output Load Capacitance, C
(including jig capacitance)

Input Rise and Fall Times 5 20 ns
Input Pulse Levels 0.0–3.0 0.45–2.4 V

Table 7. Test Specifications

Test Condition -55

L

30 100 pF

All

others Unit

Note:

Diodes are IN3064 or equivalents.

Figure 8. Test Setup

KEY TO SWITCHING WAVEFORMS

WAVEFORM INPUTS OUTPUTS

Don’t Care, Any Change Permitted Changing, State Unknown

Does Not Apply Center Line is High Impedance State (High Z)

21504C-12

Input timing measurement
reference levels

Output timing measurement
reference levels

Steady

Changing from H to L

Changing from L to H

1.5 0.8, 2.0 V

1.5 0.8, 2.0 V

24 Am29F800B

KS000010-PAL

AC CHARACTERISTICS
Read Operations

PRELIMINARY

Parameter

JEDEC Std Test Setup -55 -70 -90 -120 -150 Unit

t

AVAV

t

AVQVtACC

t

ELQV

t

GLQV

t

EHQZ

t

GHQZ

Description

t

Read Cycle Time (Note 1) Min 55 70 90 120 150 ns

RC

Address to Output Delay

t

Chip Enable to Output Delay OE# = V

CE

t

Output Enable to Output Delay Max 30 30 35 50 55 ns

OE

Chip Enable to Output High Z (Note

t

DF

1)
Output Enable to Output High Z

t

DF

(Note 1)

Read Min 0 n s
Toggle and

Data# Polling

t

OEH

Output Enable
Hold Time
(Note 1)

CE# = V
OE# = V

IL

Max 55 70 90 120 150 ns

IL

Max 55 70 90 120 150 ns

IL

Max 20 20 20 30 35 ns

Max 20 20 20 30 35 ns

Min 10 ns

Speed Option

Output Hold Time From Addresses,

t

AXQX

CE# or OE#, Whichever Occurs

t

OH

Min 0 ns

First (Note 1)

Notes:

1. Not 100% tested.

2. See Figure 8 and Table 7 for test specifications.

Addresses

CE#

OE#

WE#

Outputs

RESET#

RY/BY#

0 V

t

RC

Addresses Stable

t

ACC

t

OE

t

OEH

t

CE

HIGH Z

Output Valid

Figure 9. Read Operations Timings

t

DF

t

OH

HIGH Z

21504C-13

Am29F800B 25

AC CHARACTERISTICS
Hardware Reset (RESET#)

Parameter

Description All Speed OptionsJEDEC Std Test Setup Unit

PRELIMINARY

t

READY

t

READY

t

RP

t

RH

t

RB

Note:

Not 100% tested.

RY/BY#

CE#, OE#

RESET#

RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)

RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)

Max 20 µs

Max 500 ns

RESET# Pulse Width Min 500 ns
RESET# High Time Before Read (See Note) Min 50 ns
RY/BY# Recovery Time Min 0 ns

t

RH

t

RP

t

Ready

RY/BY#

CE#, OE#

RESET#

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t

Ready

t

RP

Figure 10. RESET# Timings

t

RB

21504C-14

26 Am29F800B

AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)

Parameter

PRELIMINARY

-55 -70 -90 -120 -150JEDEC Std. Description Unit

t

ELFL/tELFH

t

FLQZ

t

FHQV

BYTE#

Switching

from word

to byte

mode

CE# to BYTE# Switching Low or High Max 5 ns
BYTE# Switching Low to Output HIGH Z Max 20 20 20 30 35 ns
BYTE# Switching High to Output Active Min 55 70 90 120 150 ns

CE#

OE#

BYTE#

t

DQ0–DQ14

DQ15/A-1

ELFL

t

ELFH

Data Output

(DQ0–DQ14)

DQ15

Output

t

FLQZ

Data Output

(DQ0–DQ7)

Address

Input

BYTE#

BYTE#

Switching

from byte

DQ0–DQ14

to word

mode

DQ15/A-1

Figure 11. BYTE# Timings for Read Operations

CE#

WE#

BYTE#

Note:

Refer to the Erase/Program Operations table for t

Figure 12. BYTE# Timi ngs for Write Operations

Data Output
(DQ0–DQ7)

The falling edge of the last WE# signal

t

SET

(tAS)

and tAH specifications.

AS

Address

Input

t

FHQV

t

HOLD

Data Output

(DQ0–DQ14)

DQ15

Output

21504C-15

(tAH)

21504C-16

Am29F800B 27

AC CHARACTERISTICS
Erase/Program Operations

Parameter

PRELIMINARY

-55 -70 -90 -120 -150JEDEC Std. Description Unit

t

AVAV

t

AVWL

t

WLAX

t

DVWH

t

WHDX

t

GHWL

t

ELWL

t

WHEH

t

WLWH

t

WHWL

t

WHWH1tWHWH1

t

WHWH2tWHWH2

t

WC

t

AS

t

AH

t

DS

t

DH

t

OES

t

GHWL

t

CS

t

CH

t

WP

t

WPH

t

VCS

t

RB

t

BUSY

Write Cycle Time (Note 1) Min 55 70 90 120 150 ns
Address Setup Time Min 0 ns
Address Hold Time Min 45 45 45 50 50 ns
Data Setup Time Min 25 30 45 50 50 ns
Data Hold Time Min 0 ns
Output Enable Setup Time Min 0 ns
Read Recovery Time Before Write

(OE# High to WE# Low)

Min 0 ns

CE# Setup Time Min 0 ns
CE# Hold Time Min 0 ns
Write Pulse Width Min 30 35 45 50 50 ns
Write Pulse Width High Min 20 ns

Byte Typ 7

Programming Operation (Note 2)

µs

Word Typ 12
Sector Erase Operation (Note 2) Typ 1 sec
VCC Setup Time (Note 1) Min 50 µs
Recovery Time from RY/BY# Min 0 ns
Program/Erase Valid to RY/BY# Delay Min 30 30 35 50 55 ns

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

28 Am29F800B

AC CHARACTERISTICS

PRELIMINARY

Program Command Sequence (last two cycles)

t

WC

Addresses

555h

CE#

t

GHWL

OE#

t

WP

WE#

t

CS

t

DS

t

Data

A0h

RY/BY#

t

VCS

V

CC

Notes:

1. PA = program addre ss, PD = program data, D

2. Illustration shows device in word mode.

t

AS

PA PA

t

AH

t

CH

t

WPH

DH

PD

t

BUSY

is the true data at the program address.

OUT

Read Status Data (last two cycles)

PA

t

WHWH1

Status

D

OUT

t

RB

21504C-17

Figure 13. Program Operation Timings

Am29F800B 29

AC CHARACTERISTICS

PRELIMINARY

Erase Command Sequence (last two cycles) Read Status Data

t

AS

555h for chip erase

VA

t

AH

VA

Addresses

t

WC

2AAh SA

CE#

t

GHWL

t

OE#

WE#

Data

t

CS

CH

t

WP

t

WPH

t

DS

t

DH

55h

30h

10 for Chip Erase

t

BUSY

t

WHWH2

In

Progress

Complete

t

RB

RY/BY#

t

VCS

V

CC

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

2. Illustration shows device in word mode.

21504C-13

Figure 14. Chip/Sector Erase Operation Timings

30 Am29F800B

AC CHARACTERISTICS

Addresses

CE#

t

CH

OE#

t

WE#

DQ7

OEH

t

ACC

PRELIMINARY

t

RC

VA

t

CE

t

OE

t

DF

t

OH

Complement

VA VA

Complement

True

Valid Data

High Z

DQ0–DQ6

t

BUSY

Status Data

Status Data

True

Valid Data

High Z

RY/BY#

Note:

V A = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.

21504C-18

Figure 15. Data# Polling Timings (During Embedded Algorithms)

t

RC

Addresses

CE#

OE#

WE#

DQ6/DQ2

RY/BY#

t

CH

t

BUSY

t

OEH

High Z

t

ACC

VA

t

CE

t

OE

t

DF

t

OH

(first read) (second read) (stops toggling)

VA VA

Valid Status

VA

Valid DataValid StatusValid Status

Note:

V A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.

21504C-19

Figure 16. Toggle Bit Timings (During Embedded Algorithms)

Am29F800B 31

PRELIMINARY

AC CHARACTERISTICS

Enter

Embedded

Erasing

WE#

DQ6

DQ2

Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.

Erase

Erase

Suspend

Erase Suspend

Enter Erase

Suspend Program

Read

Figure 17. DQ2 vs. DQ6

Erase
Suspend
Program

Erase Suspend

Read

Erase

Resume

Erase

Erase

Complete

21504C-20

Temporary Sector Unprotect

Parameter

All Speed OptionsJEDEC Std. Description Unit

t

VIDR

t

RSP

Note: Not 100% tested.

12 V

RESET#

0 or 5 V

CE#

WE#

RY/BY#

VID Rise and Fall Time (See Note) Min 500 ns
RESET# Setup Time for Temporary Sector

Unprotect

Min 4 µs

0 or 5 V

t

VIDR

t

VIDR

Program or Erase Command Sequence

t

RSP

21504C-21

Figure 18. Temporary Sector Unprotect Timing Diagram

32 Am29F800B

PRELIMINARY

AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations

Parameter

-55 -70 -90 -120 -150JEDEC Std. Description Unit

t

AVAV

t

AVEL

t

ELAX

t

DVEH

t

EHDX

t

GHEL

t

WLEL

t

EHWH

t

ELEH

t

EHEL

t

WHWH1

t

WHWH2

t

t
t
t
t

t

OES

t

GHEL

t
t

t

t

CPH

t

WHWH1

t

WHWH2

Write Cycle Time (Note 1) Min 55 70 90 120 150 ns

WC

Address Setup Time Min 0 ns

AS

Address Hold Time Min 45 45 45 50 50 ns

AH

Data Setup Time Min 25 30 45 50 50 ns

DS

Data Hold Time Min 0 ns

DH

Output Enable Setup Time Min 0 ns
Read Recovery Time Before Write

(OE# High to WE# Low)
WE# Setup Time Min 0 ns

WS

WE# Hold Time Min 0 ns

WH

CE# Pulse Width Min 30 35 45 50 50 ns

CP

Min 0 ns

CE# Pulse Width High Min 20 ns
Programming Operation

(Note 2)

Byte Typ 7

Word Typ 12

Sector Erase Operation (Note 2) Typ 1 sec

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

µs

Am29F800B 33

AC CHARACTERISTICS

PRELIMINARY

Addresses

WE#

OE#

CE#

Data

RESET#

555 for program
2AA for erase

t

WC

t

WH

t

WS

t

RH

PA for program
SA for sector erase
555 for chip erase

t

AS

t

GHEL

t

CP

t

CPH

t

DS

t

DH

A0 for program
55 for erase

t

AH

t

PD for program
30 for sector erase
10 for chip erase

t

BUSY

Data# Polling

WHWH1 or 2

PA

DQ7# D

OUT

RY/BY#

Notes:

1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, D

2. Figure indicates the last two bus cycles of the command sequence, with the device in word mode.

Figure 19. Alternate CE# Controlled Write Operation Timings

= Array Data.

OUT

21504C-22

34 Am29F800B

PRELIMINARY

ERASE AND PROGRAMMING PERFORMANCE

Parameter Typ (Note 1) Max (Note 3) Unit Comments

Sector Erase Time 1.0 8 s
Chip Erase Time (Note 2) 19 s
Byte Programming Time 7 300 µs

Word Programming Time 12 500 µs
Chip Programming Time

(Note 2)

Byte Mode 7.2 21.6 s

Word Mode 6.3 18.6 s

Excludes 00h programming
prior to erasure (Note 4)

Excludes system level
overhead (Note 5)

Notes:

1. Typical program and erase times assume the following conditions: 25

°

C, 5.0 V VCC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V

= 4.5 V (4.75 V for -55), 1,000,000 cycles.

CC

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Description Min Max

Input voltage with respect to V
(including A9, OE#, and RESE T#)

on all pins except I/O pins

SS

–1.0 V 12.5 V

Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V

Current –100 mA +100 mA

V

CC

Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol Parameter Description Test Setup Typ Max Unit

Input Capacitance VIN = 0 6 7.5 pF

Output Capacitance V

Control Pin Capacitance VIN = 0 7.5 9 pF

= 0 8.5 12 pF

OUT

C

C

C

IN

OUT

IN2

Notes:

1. Sampled, not 100% tested.

2. Test conditions T

= 25°C, f = 1.0 MHz.

A

DATA RETENTION

Parameter Test Conditions Min Unit

Minimum Pattern Data Retention Time

150°C 10 Years
125°C 20 Years

Am29F800B 35

PRELIMINARY

PHYSICAL DIMENSIONS

SO 044—44-Pin Small Outline Package (measured in millimeters)

2.17

2.45

44

23

13.10

13.50

1

1.27 NOM.

TOP VIEW

28.00

28.40

0.35

0.50

SIDE VIEW

22

0.10

0.35

2.80

MAX.

15.70

16.30

SEATING
PLANE

0°
8°

0.10

0.21

0.60

1.00

END VIEW

16-038-SO44-2
SO 044
DF83
8-8-96 lv

36 Am29F800B

PRELIMINARY

PHYSICAL DIMENSIONS (continued)

TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters)

0.95

1.05

Pin 1 I.D.

1

24

18.30

18.50

19.80

20.20

48

11.90

12.10

25

0.50 BSC

0.05

0.15

16-038-TS48-2
TS 048
DT95
8-8-96 lv

1.20

MAX

0.25MM (0.0098") BSC

0.08

0.20

0.10

0°

0.21

5°

0.50

0.70

TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters)

0.95

1.05

Pin 1 I.D.

1

24

18.30

18.50

19.80

20.20

48

11.90

12.10

25

0.05

0.15

SEATING PLANE

0.50 BSC

1.20

MAX

0.25MM (0.0098") BSC

16-038-TS48

0.08

0.20

0.10

0°
5°

0.50

0.70

0.21

TSR048
DT95
8-8-96 lv

Am29F800B 37

PRELIMINARY

REVISION SUMMARY FOR AM29F800B
Revision B

Global

Added -55 speed option. Changed data sheet designa­tion from Advance Information to Preliminary.

Sector Protection/Unprotection

Corrected text to indicate that these functions can only
be implemented using programming equipm ent.

Table 1, Device Bus Operations

Revised to indicate inputs for both CE# and RESET#
are required for standby mode.

Program Command Sequence

Changed to indicate D ata# Polling is active for 2 µs
after a program command sequence if the sector spec­ified is protected.

Sector Erase Command Sequence and DQ3: Sector Erase Timer

Corrected sector erase timeout to 50 µs.

Erase Suspend Command

Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.

DC Characteristics

Changed to indicate V
to 12.5 V, with a V
typical values to TTL table. Revised CMOS ty pical
standby current (I

Figure 14: Chip/Sector Erase Operatio n Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings

Corrected hexadecimal values in address and data
wavef orms. In Figure 19, corrected dat a v alues f or chip
and sector erase.

min and max values are 11.5

ID

test condition of 5.0 V. Added

CC

).

CC3

Erase and Programming Performance

Corrected word and chip programming times.

Revision C

Global

Formatted for consistency with other 5.0 volt-only data
sheets.

Revision C+1

Distinctive Characteristics

Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.

Changed minimum endurance to 1 million write cycles
per sector guaranteed.

AC Characteristics

Erase/Program Operations :

ence for t

WHWH1

and t
100% tested. Changed t
ns device. Changed t
to 12 µs.

Alternate CE# C ontrolled Erase/Program Operations:

Corrected the notes ref erence f or t
These parameters are 100% tested. Changed t

specifications for 55 ns device. Changed t

t

CP

word mode specification to 12 µs.

Temporary Sector Unprotect Table

Added note reference for t
100% tested.

Erase and Programming Performance

In Notes 1 and 6, changed the endur ance s pecification
to 1 million cycles.

Corrected the notes refer-

WHWH2

WHWH1

. These parameters are

and tCP specifications for 55

DS

word mode specification

WHWH1

. This parameter is not

VIDR

and t

WHWH2

and

DS

WHWH1

.

38 Am29F800B

PRELIMINARY

Trademarks

Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29F800B 39