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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.3:1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
105 W MIN. WITH 6.5 dB GAIN
.400 x . 500 2L SFL (S138)
ORDER CODE
AM2729-110
AM2729-110
hermetically sealed
BRANDING
2729-110
DESCRIPT ION
The AM2729-110 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding
techniques ensure high reliability and product consistency (including phase characteristics).
The AM2729-110 is supplied inthe BIGPAC Hermetic Metal/ Cerami c package wi th i nternal
Input/Output matching circuitry, and is intended
for military and other high reliability applications.
ABSOLU TE MAXI MUM R AT ING S (T
Symbol Parameter Value Unit
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 438 W
Device Current* 12 A
Collector-Supply Voltage* 48 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CONNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly to rated RF amplifieroperation
August 1992
Junction-Case Thermal Resistance* 0.4 °C/W
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AM2729-110
ELEC TRICAL SPE CIF ICA TIONS (Tcase = 25°C)
STATIC
Symbol Test Condition s
BV
CBO
BV
EBO
BV
CER
I
CES
h
FE
DYNAMIC
Symb ol Test Condit i o ns
P
OUT
η
cf=2700 — 2900MHz P
G
P
Note: Pulse Widt h
IC= 40mA IE= 0mA 55 — — V
IE= 8mA IC= 0mA 3.5 — — V
IC = 40mA RBE= 10Ω 55 — — V
VBE= 0V VCE= 40V — — 30 mA
VCE= 5V IC= 4A 30 — — —
f = 2700 — 2900MHz P
f = 2700 — 2900MHz P
50 µSec
=
Duty Cycle=10%
23.5W V
=
IN
23.5W V
=
IN
23.5W V
=
IN
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
40V 105 115 — W
=
CC
40V 33 40 — %
=
CC
40V 6.5 6.9 — dB
=
CC
Unit
Uni t
TYPICAL PERFORMAN CE
TYPI CAL BROADBAND
PERFORMANCE
PIN(W)
28
24
20
VCC- 40 Volts
PW - 50 µsec
DC - 10%
TC-25°C
PIN(W)
20
24
28
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IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
AM2729-110
Z
H
CL
Z
CL
L
Z
H
IN
FREQ. ZIN(Ω)Z
L = 2.7 GHz 8.0 − j 18.5 4.0 − j 9.0
M = 2.8 GHz 15.0 − j 21.0 4.5 − j 9.5
H=2.9 GHz 17.3 − j 12.0 5.0 − j 8.0
PIN= 23.5 W
VCC= 40 V
Normalized to 50 ohms
TEST CIRCUIT
CL
(Ω)
L
All dimensions are in inches.
Substrate material: .025 thick AI2O
C1 : 1500 pF RF Feedthrough
C2 : 1 µF CK06 Capacitor
C3 : 1 µF Tantalum Capacitor
C4 : 100 µF Electrolytic Capacitor, 63V
3
C5 : 22 pF Chip Capacitor
RFC1 : No. 26 Wire, 2 Turn .08 I.D.
RFC2 : No. 26 Wire, 2 Turn .08 I.D.
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AM2729-110
PACKAGE MECHANICAL DATA
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents orother rightsof third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevicesor systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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