Datasheet AM1214-300 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICA TIONS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. 5: 1 VSWR CAPABILITY

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.O VERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 270 W MIN. WITH 6.3 dB GAIN

OUT

AM1214-300

.400 x .500 2L F L (S038)

hermetically sealed

ORDER CODE

AM1214-300

DESCRIPTIO N

The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed out­put and driver applications.

This device is designed for operation under moder­ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech­niques ensure high reliability and product consist­ency.

The AM1214-300 is supplied in the BIGPAC Her­metic M etal/ Cerami c package wi th i nternal
Input/Output matching structures.

ABSOLU TE M AXI MUM RATING S (T

Symbol Parameter Value Uni t

P

T

DISS

I

V

CC

T

STG

C

J

Power Dissipation* (TC≤ 100°C) 730 W
Device Current* 18.75 A
Collector-Supply Voltage* 55 V
Junction Temperature (PulsedRF Operation) 250
Storage Temperature − 65 to +200

case

= 25°C)

PIN CO NNE C TIO N

1. Collector 3. Emitter

2. Base 4. Base

BRANDING

1214-300

°

C

°

C

THERMA L DATA

R

TH(j-c)

*Appliesonly torated RFamplifieroperation

September 1992

Junction-Case Thermal Resistance* 0.24

°

C/W

1/6

AM1214-300

ELEC TRICAL SPEC IFICATI ONS (T

case

= 25°C)

STATIC

Symbol Test Condi tion s

BV
BV

BV

I

CES

h

CBO
EBO
CES

FE

IC= 50mA IE= 0mA 65 — — V
I

15mA IC= 0mA 3.0 — — V

E =

IC = 50mA 65 — — V
VCE= 50V — — 30 mA
VCE= 5V IC= 5A 10 — — —

DYNAMIC

Symb ol Test Co n dit i on s

P

OUT

η

cf=1235 — 1365MHz P

G

P

Note: Pulse Width

f = 1235 — 1365MHz P

f = 1235 — 1365MHz P

50µSec

=

Duty Cycl e=4%

63W V

=

IN

63W V

IN =

63W V

=

IN

Value

Min. Typ. M ax.

Value

Min. Typ. Max.

50V 270 300 — W

=

CC

50V 40 45 — %

CC =

50V 6.3 6.8 — dB

=

CC

Unit

Uni t

2/6

TYPICAL PERFORM AN CE

TYPICAL BROADBAND

POWER AMPLIFIER

AM1214-300

RELATIVE POWER OUTPUT &

COLLECTOR EFFICIENCY vs

COLLECTOR VOLTAGE

MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & PULSE CYCLE

3/6

AM1214-300

IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

PIN= 63 W
VCC= 50 V
Z0* = 50 ohms

L = 1235 MHz 2.5 + j 5.0 2.0 − j 2.5
M = 1300 MHz 1.5 + j 3.5 2.5 − j 2.5
H = 1365 MHz 1.0 + j 3.5 2.0 − j 3.0

TYPICAL COLLECTOR

LOAD IMPEDANCE

Z

CL

PIN= 63 W
VCC= 50 V
Z0* = 50 ohms

FREQ. ZIN(Ω)Z

CL

(Ω)

*Normalized Impedance

4/6

TEST CIRCUIT

Ref.: Dwg. No. C125510

AM1214-300

PACKAGE MECHANICAL DATA

5/6

AM1214-300

Information furnishedis believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of use of such information norfor any infringement of patents or other rights of third parties which mayresults from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlifesupportdevices or systemswithoutexpress
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

Australia - Brazil - France- Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-

Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

SGS-THOMSON Microelectronics GROUP OF COMPANIES

6/6