Datasheet AM1214-175 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICA TIONS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. 3: 1 VSWR CAPABILITY

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.O VERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 160 W MIN. WITH 7.3 dB GAIN

OUT

AM1214-175

.400 x . 500 2LFL (S038)

hermetically sealed

ORDER CODE

AM1214-175

DESC RIPT ION

The AM1214-175 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed output and driver applications.

This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera­tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond­ing techniques ensure high reliability and product
consistency.

The AM1214-175 is supplied in the BIGPAC Her­metic M etal/ Cerami c package wi th i nternal
Input/Output matching structures.

ABSOLU TE MAXIMUM RAT ING S (T

Symbol Parameter Value Uni t

P

T

DISS

I

V

CC

T

STG

C

J

Power Dissipation* (TC≤ 100°C) 330 W
Device Current* 14 A
Collector-Supply Voltage* 45 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

case

= 25°C)

PIN CONNEC TIO N

1. Collector 3. Emitter

2. Base 4. Base

BRANDING

1214-175

°

C

°

C

THERMA L DATA

R

TH(j-c)

*Appliesonly torated RFamplifieroperation

September 1992

Junction-Case Thermal Resistance* 0.45 °C/W

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AM1214-175

ELEC TRICAL SPECI F ICA TI ONS (T

case

= 25°C)

STATIC

Symbol Test Condi tion s

BV
BV

BV

I

CES

h

CBO
EBO
CES

FE

IC= 60mA IE= 0mA 65 — — V
IE= 10mA IC= 0mA 3.5 — — V
IC = 100mA 65 — — V
VCE= 40V — — 25 mA
VCE= 5V IC= 5A 15 — 150 —

DYNAMIC

Symb ol Test Condi tions

P

OUT

η

cf=1215 — 1400MHz P

G

P

Note: Pulse Widt h

f = 1215 — 1400MHz P

f = 1215 — 1400MHz P

150µS

=

Duty Cycl e=5%

30W V

=

IN

30W V

=

IN

30W V

=

IN

Value

Min. Typ. Max.

Value

Min. Typ. Max.

40V 160 180 — W

=

CC

40V 45 50 — %

=

CC

40V 7.3 7.8 — dB

=

CC

Unit

Unit

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TYPICAL PERFO RM AN CE

TYPICAL BROADBAND

POWER A M PLIFIER

AM1214-175

RELATIVE POWER OUTPUT AND

COLLECTOR EFFICIENCY vs

COLLECTOR VOLTAGE

MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE

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AM1214-175

IMPEDA NCE D ATA

TYPICAL INPUT

IMPEDANCE

Z

IN

PIN= 30 W
VCC= 40 V
Z0*=50 ohms

FREQ. ZIN(Ω)Z

L = 1215 MHz 4.0 + j 3.5 2.0 − j 2.5

M = 1300 MHz 2.0 + j 3.0 2.0 − j 1.5

H = 1400 MHz 1.5 + j 4.0 1.5 − j 2.5

TYPICAL COLLECTOR

LOAD IMPEDANCE

Z

CL

PIN= 30 W
VCC= 40 V
Z0* = 50 ohms

CL

(Ω)

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*Normalized Impedance

TEST CIRCUIT

AM1214-175

Ref. Dwg. No.: 104-001280

PACKAGE MECHANICAL DATA

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AM1214-175

Information furnishedis believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of use of such information norfor any infringement of patents or other rights of third parties which mayresults from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlifesupportdevices or systemswithoutexpress
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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