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RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 100 W MIN. WITH 6.0 dB GAIN
OUT
.400 x .5 00 2LFL ( S 03 8)
ORDER CO DE
AM1214-100
AM1214-100
L-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetically sealed
BRANDI NG
1214-100
DESCRIPTION
The AM1214-100 device is a high power Class
C transisto r specific ally desi gned for L-Ban d Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance an d compu teri zed au tomati c wire bon ding techniques ensure high reliability and product
consistency.
AM1214-100 is su pplied in the grounded IMPAC™
hermetic metal/ceramic package with internal
input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
T
DISS
I
V
T
STG
C
CC
J
Power Dissipation* (TC ≤ 100˚C) 270 W
Device Current* 13.5 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
case
= 25°C)
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
August 1992
Junction-Case Thermal Resistance* 0.55
°
C/W
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AM1214-100
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Valu e
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CES
CES
h
FE
IC = 50mA IE = 0mA 65 — — V
IE = 10mA IC = 0mA 3.5 — — V
IC = 100mA 65 — — V
VBE = 0V VCE = 32V — — 20 mA
VCE = 5V IC = 5A 15 — — —
Min. Typ. Max.
DYNAMIC
Value
Symbol Test Conditi ons
P
OUT
η
cf = 1215 — 1400MHz PIN = 25W VCC = 28V 50 — — %
G
P
Note: Pulse Widt h
f = 1215 — 1400MHz PIN = 25W VCC = 28V 100 — — W
f = 1215 — 1400MHz PIN = 25W VCC = 28V 6.0 — — dB
100µSec
=
Duty Cycle=10%
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
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AM1214-100
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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