Datasheet AM1011-500 Datasheet (SGS Thomson Microelectronics)

AM1011-500

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICAT ION S

.P

OUT =

GAIN

500 W MIN. WITH 8.5 dB MIN.

.10:1 LOAD VSWR CAPABILITY @ 10µS.,

1% DUTY

.SIXPAC HERMETIC METAL/CERAMIC

PACKAGE

.EMITTER SITE BALLASTED OVERLAY

GEOMETRY

.REFRACTORY/GOLD METALLIZATION

.LOW THERMAL RESISTANCE

.INTERNAL INPUT/OUTPUT MATCHING

.CHARACTERIZED UNDER 32µS.,2%

DUTY CYCLE PULSE CONDITIONS

DESCRIP T IO N

The AM1011-500 device is a high power Class C
transistor specifically designed for L-Band Av­ionic applications involving high pulse burst duty
cycles.

This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera­tures. Low RF thermal resistance and computer­ized automatic wire bonding techniques ensure
high reliability and product consistency.

The AM1011-500 is supplied in the SIXPAC
Hermetic metal/ceramic package with internal in­put/output matching structures.

.400 x .600 2LFL (M198)

ORDER CODE

AM1011-500

PIN CONNECTI O N

1. Collector 3. Emitter

2. Base 4. Base

hermetically sealed

BRAN DI NG

1011-500

ABSOLUTE MAXIM UM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Appliesonly torated RF amplifieroperation

Power Dissipation* (TC≤ 100°C)
Device Current* 27 A
Collector-Supply Voltage* 55 V

Junction Temperature (Pulsed RF Operation) 250
Storage Temperature

Junction-CaseThermal Resistance* 0.11

case

= 25°C)

1,360 W

− 65 to +200

°
°

°

C/W

C
C

AM1 011-500

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Conditions

BV

CBO

BV

EBO

BV

CES I

I

CES V

h

FE V

IC= 50 mA IE= 0mA
IE= 30 mA IC= 0mA

= 50 mA VBE= 0V

C

= 0V VCE= 50 V

BE

= 5V IC=1.0 A

CE

DYNAMIC

Symbol Test Conditions

P

OUT f = 1090 MHz P

hc

G

Load

Mismatch

Note: Pulse Width

f = 1090 MHz P

P f = 1090 MHz P

= 500 W Peak VSWR = 10:1, 10µS, 1% Duty

P

OUT

F=1090MHz VSWR=5:1, 32µS, 2% Duty

= 50 V

V

CC

32µSec, Duty Cycle

=

70 W V

IN =
OUT =
OUT =

2%

=

500 W V
500 W V

CC =
CC =
CC =

50 V
50 V
50 V

Value

Min. Typ . Max.

Uni t

70 — — V

3.0 — — V
70 — — V
— — 40 mA
10 — 200 —

Value

Min. Typ. Max.

Uni t

500——W

40 — — %

8.5 — — dB

No Degradation in Output

Power

TYPICAL PERFO R MANCE

POWER OUTPUT & COLLECTOR

EFFICIENCY vs POWER INPUT

P

OUT

POWER OUTPUT & COLLECTOR

EFFICIENCY vs POWER INPUT

P

OUT

η

C

η

C

* Pulse Burst conditions:

128 µSec train, 0.5 µSec on,

0.5 µSec off; with a period of 6.4 msec.

IMPEDANCE DATA

AM1 011-500

TEST CIRCUI T

FREQ.

Z

IN

1030 MHz 4.35 + j 6.97
1090 MHz 4.38 + j 2.75
1120 MHz 4.69 + j 2.95

P

= 70W

IN

V

= 50V

CC

(Ω)Z

CL

(Ω)

1.38 − j 4.08
.874 − j 3.55

1.3 − j 4.97

PACKAGE MECHANICAL DATA

Ref.: Dwg. No. 12-0198 rev. A

AM1 011-500

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron­ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

1995 SGS-THOMSON Microelectronics - All Rights Reserved

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