Datasheet AM1011-400 Datasheet (SGS Thomson Microelectronics)

Page 1
RF & MICROWAVE TRANSISTORS L-BAND AVI ONICS APPL ICATIO NS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.15:1 VSWR CAPABILITY
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
400 W MIN. WITH 8.0 dB GAIN
=
.400 x . 500 2LFL (S038)
ORDER CODE
AM1011-400
AM1011-400
hermetically sealed
BRAND I NG
1011-400
DESCRIPTION
The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications.
This device is designed for operation under moder­ate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding tech­niques ensure high reliability and product consist­ency.
The AM1011-400 is supplied in the BIGPACHer­metic Metal/Ceramic package Input/Output match­ing structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 880 W Device Current* 24 A Collector-Supply Voltage* 55 V Junction Temperature (Pulsed RF Operation) 250 Storage Temperature 65 to +200
case
= 25°C)
PIN CONNEC TIO N
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.17 °C/W
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Page 2
AM1011-400
ELEC TRIC AL SPECI F IC A TI ONS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV BV BV
I
CES
h
CBO EBO CER
FE
IC= 50mA IE= 0mA 65 V IE= 15mA IC= 0mA 3.5 V IC = 50mA RBE= 10 65 V VBE= 50V VCE= 0V 30 mA VCE= 5V IC= 5A 10
DYNAMIC
Symb ol Test Condi t i o ns
P
OUT
η
cf=1090MHz P
G
P
Note: Pulse Widt h
f = 1090MHz P
f = 1090MHz P
32µSec
=
Duty Cycl e=2%
63W V
=
IN
63W V
=
IN
63W V
=
IN
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
50V 400 450 W
=
CC
50V 45 50 %
=
CC
50V 8.0 8.5 dB
=
CC
Unit
Uni t
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Page 3
TYPICAL PERFO RM AN CE
AM1011-400
TYPICAL NARROWBAND
TYPICAL NARROWBAND
POWER AMPLIFIER
POWER AMPLIFIER
500
450
400
P O W
350
E R
300
O U T
250
P U T
200
W A
150
T T S
100
50
0
10 20 30 40 50 60 70 80 90
P
OUT
POWER INPUT(WATTS)
POWER INPUT(WATTS)
Freq=1090 MHz V
CC =
PW DC=2% T
A =
50 V
32 µsec
=
25°C
TYPICAL RELATIVE OUTPUT & COLLEC-
TYPICAL RELATIVE OUTPUT
POWER & COLLECTOR EFFICIENCY
TOR EFFICIENCY vs COLLECTOR VOLTAGE
vs COLLECTOR VOLTAGE
80
70
C O L L E
60
C T O R
η
C
E
50
F F
.
%
40
30
100
90
80
P O
W
70
E R
60
O
U T
50
P U T
40
W
A
30
T T S
20
10
0
30 35 40 45 50
P
OUT
Freq=1090 MHz P
IN =
PW DC=2% T
A =
COLLECTOR VOLTAGE(VOLTS)
COLLECTOR VOLTAGE(VOLTS)
60 W
32 µsec
=
25°C
η
C
80
70
C O L L E
60
C T O R
E
50
F F
.
%
40
30
Θ
JC
°C/W
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
DC=4%
DC=10%
DC=2%
T
<45°C
C
PW 100 µsec; V PW > 100 µsec; V
CC =
CC
50V
< 50V
PULSE WIDTH (µsec)
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Page 4
AM1011-400
IMPEDA NCE D ATA
TYPICAL COLLECTOR
LOAD IMPEDANCE
PIN= 63 W VCC= +50 V ZO* = 50
Z
CL
FREQ. ZIN(Ω)Z
CL
(Ω)
L = 1025 MHz 2.4 + j 3.2 1.4 j 2.2 M = 1090 MHz 3.8 + j 2.5 1.6 j 1.6 H = 1150 MHz 2.3 + j 1.3 1.2 j 1.1
TYPICAL I NPUT
IMPEDANCE
Z
IN
PIN= 63 W VCC= +50 V ZO* = 50
*Normalized Impedance
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Page 5
TEST CIRCUIT
.185
AM1011-400
Ref.: Dwg. No.: 101-002568
PACKAGE MECHANICAL DATA
5/6
Page 6
AM1011-400
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license isgrantedby implication or otherwiseunder any patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproductsare notauthorizedforuseascritical componentsinlife supportdevices or systemswithout express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
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