Datasheet AM0912-300 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. 15: 1 VSWR C APABI LIT Y

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.O VERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT

300 W MIN. WITH 7.0 dB GAIN

=

.BANDWIDTH 255 MHz

DESCRIPTIO N

The AM0912-300 avionics power transistor is a
broadband, high peak pulse power device speci­fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.

The AM0912-300 is also designed for specialized
applications where reduced power is provided
under pulse formats utilizing short pulse widths
and high burst or overall duty cycles.

This device is capable of withstanding 15:1 VSWR
mismatch load condition at any phase angle under
full rated conditions.

The AM0912-300 is housed in the unique BIG­PAC Hermetic Metal/Ceramic package with in­ternal Input/Output matching structures.

AM0912-300

AVIONI CS APPLICA TIONS

.400 x . 500 2LFL (S038)

hermetically sealed

ORDER CODE

AM0912-300

PIN CONNEC TIO N

1. Collector 3. Emitter

2. Base 4. Base

BRANDING

0912-300

ABSOLU TE MAXIMUM RAT ING S (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMA L DATA

R

TH(j-c)

*Appliesonly torated RFamplifieroperation

September 1992

Power Dissipation* (TC≤ 100°C) 940 W
Device Current* 24 A
Collector-Supply Voltage* 50 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

Junction-Case Thermal Resistance* 0.16 °C/W

case

25°C)

=

°

C

°

C

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AM0912-300

ELEC TRICAL SPECI F ICA TI ONS (T

case

= 25°C)

STATIC

Symbol Test Condi tion s

BV
BV
BV

I

CES

h

CBO
EBO
CER

FE

IC= 50mA IE= 0mA 65 80 — V
IE= 15mA IC= 0mA 3.0 — — V
IC = 50mA RBE= 10Ω 65 — — V
VCE= 50V — — 30 mA
VCE= 5V IC= 5A 10 — — —

DYNAMIC

Symb ol Test Condi tions

P

OUT

η

cf=960 — 1215MHz P

G

P

Note: Pulse Wi dth

f = 960 — 1215MHz P

f = 960 — 1215MHz P

10µSec

=

Duty Cycl e=10%

60W V

=

IN

60W V

=

IN

60W V

=

IN

Value

Min. Typ. M ax.

Value

Min. Typ. Max.

50V 300 330 — W

=

CC

50V 38 45 — %

=

CC

50V 7.0 7.4 — dB

=

CC

Unit

Uni t

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TYPICAL PERFO RM AN CE

AM0912-300

TYPICAL BRO ADBAND RESPONSE

TYPICAL POWER OUTPUT vs

POWER INPUT

Conditions:
PW = 10 µs, 10%
VCC= 50 V

MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE

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AM0912-300

IMPEDA NCE D ATA

TYPICAL INPUT

IMPEDANCE

Z

IN

PIN= 60 W
VCC= 50 V
ZO= 50 ohms

FREQ. ZIN(Ω)Z

L = 960 MHz 2.0 + j 3.6 1.7 − j 2.2
M = 1090 MHz 3.5 + j 1.7 2.0 − j 1.7
H = 1215 MHz 1.6 + j 0.5 1.8 − j 2.0

TYPICAL COLLECTOR

LOAD IMPEDANCE

Z

CL

PIN= 60 W
VCC= 50 V
ZO= 50 ohms

CL

(Ω)

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TEST CIRCUIT

AM0912-300

.200

.130

.100

.190

Ref. Dwg. No. C125519

.125

PACKAGE MECHANICAL DATA

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AM0912-300

Information furnishedis believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of use of such information norfor any infringement of patents or other rights of third parties which mayresults from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlifesupportdevices or systemswithoutexpress
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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