Datasheet AM0912-150 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRAN SIST ORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.O VERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 150 W MIN. WITH 7.5 dB GAIN

OUT

.BANDWIDT H = 255MHz

AM0912-150

AVIONI CS APPLICAT IONS

.400 x . 500 2LFL (S038)

hermetically sealed

ORDER CODE

AM0912-150

PIN CONNEC TIO N

BRANDING

0912-150

DESC RIPT ION

The AM0912-150 is des i gned for speciali z ed
avionics applications including Mode-S, TCAS and
JTIDS, where power is provided under pulse for­mats utilizing short pulse widths and high burst
or overall duty cycles.

The AM0912-150 is housed in the unique BIG­PAC Hermetic Metal/Ceramic package with in­ternal Input/Output matching structures.

ABSOLU TE MAXIMUM RAT ING S (T

Symbol Parameter Value Uni t

P

DISS

I

C

V

CC

T

J

T

STG

THERMA L DATA

R

TH(j-c)

Power Dissipation* (TC≤ 100°C) 300 W
Device Current* 16.5 A
Collector-Supply Voltage* 35 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

Junction-Case Thermal Resistance* 0.57 °C/W

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

°

C

°

C

*Appliesonly to rated RFamplifieroperation

September 1992

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AM0912-150

ELEC TRICAL SPECI F ICA TI ONS (T

case

= 25°C)

STATIC

Symbol Test Condi tion s

BV
BV

BV

I

CES

h

CBO
EBO
CES

FE

IC= 60mA IE= 0mA 55 65 — V
IE= 10mA IC= 0mA 3.5 — — V
IC = 100mA 55 — — V
VCE= 35V — — 25 mA
VCE= 5V IC= 5A 20 — — —

DYNAMIC

Symb ol Test Condi tions

P

OUT

η

cf=960 — 1215MHz P

G

P

Note: Pulse Format: 6.4 µSon6.6µS off; repea t for 3.3 ms, then off for 4. 5125 ms

f = 960 — 1215MHz P

f = 960 — 1215MHz P

Duty Cycle: Burst 49.2% overall 20.8%

26.7W V

=

IN

26.7W V

=

IN

26.7W V

=

IN

35V 150 — — W

=

CC

35V 45 — — %

=

CC

35V 7.5 — — dB

=

CC

Value

Min. Typ. M ax.

Value

Min. Typ. Max.

Unit

Uni t

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TYPICAL PERFO RM AN CE

TYPICAL POWER INPUT, POWER

OUTPUT & COLLECTOR EFFICIENCY

vs FREQUENCY

AM0912-150

POWER OUTPUT & COLLECTOR

EFFICIENCY vs POWER INPUT

MAXIMU M THERMA L RESISTAN CE vs P U LSE WIDTH & D UT Y CYCLE

VCC= 28-35V
PIN≅ 26W
TC<45°C

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AM0912-150

IMPEDA NCE D ATA

TYPICAL INPUT

IMPEDANCE

Z

IN

PIN= 26.7 W
VCC= 35 V
ZO* = 10 ohms

FREQ. ZIN(Ω)Z

L = 960 MHz 2.1 + j 3.8 3.8 − j 3.6

• = 1000 MHz 1.5 + j 3.1 3.0 − j 2.4

M = 1050 MHz 1.2 + j 2.5 2.5 − j 2.0

• = 1150 MHz 1.5 + j 2.4 2.0 − j 2.0

H = 1215 MHz 1.7 + j 2.4 2.0 − j 2.5

TYPICAL COLLECTOR

LOAD IMPEDANCE

Z

CL

PIN= 26.7 W
VCC= 35 V
ZO* = 10 ohms

CL

(Ω)

*Normalized Impedance

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TEST CIRCUIT

Ref: Dwg. No. C127513

AM0912-150

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AM0912-150

PACKAGE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgrantedby implication or otherwiseunder any patent orpatentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics- All Rights Reserved

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