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ALD1103SB

Datasheet ALD1103SB, ALD1103PB Datasheet (Advanced Linear Devices Inc)

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Page 1
ADVANCED LINEAR DEVICES, INC.
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103
GENERAL DESCRIPTION
The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package.
The ALD1103 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
FEATURES
• Thermal tracking between N-channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 10
13
Ω typical
• Low input and output leakage currents
• Negative current (I
• Enhancement mode (normally off)
• DC current gain 10
) temperature coefficient
DS
9
• Matched N-channel and matched P-channel in one package
APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Analog switches
• Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog inverter
• Precision matched current sources
PIN CONFIGURATION
DN1
GN1
SN1
V
DP1
GP1
SP1
1
2
3
-
4
5
6
7
DB, PB, SB PACKAGE
14
13
12
11
10
DN2
GN2
SN2
+
V
DP2
GP2
9
8
SP2
BLOCK DIAGRAM
N GATE 1 (2)
N DRAIN 1 (1)
N DRAIN 2 (14)
N SOURCE 1 (3) SUBSTRATE (4)
N SOURCE 2 (12)
N GATE 2 (13)
ORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C0°C to +70°C0°C to +70°C 14-Pin 14-Pin 14-Pin
CERDIP Plastic Dip SOIC Package Package Package
ALD1103 DB ALD1103 PB ALD1103 SB
* Contact factory for industrial temperature range.
© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www .aldinc.com
P DRAIN 1 (5)
P DRAIN 2 (10)
P GATE 1 (6)
P SOURCE 1 (7) SUBSTRATE (11)
P SOURCE 2 (8)
P GATE 2 (9)
Page 2
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V Gate-source voltage, V
DS
GS
Power dissipation 500 mW Operating temperature range PB, SB package 0°C to +70°C
DB package -55°C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C
13.2V
13.2V
OPERATING ELECTRICAL CHARACTERISTICS T
= 25°C unless otherwise specified
A
N - Channel Test P - Channel Test
Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions
Gate Threshold V Voltage
0.4 0.7 1.0 V IDS = 10µA VGS = V
T
-0.4 -0.7 -1.2 V IDS = -10µA VGS = V
DS
DS
Offset Voltage V V
- V
GS1
GS2
OS
10 mV IDS = 100µA VGS = V
Gate Threshold Temperature TC Drift
On Drain I Current
DS (ON)
Trans-. G conductance
Mismatch ∆G Output G
Conductance Drain Source R
ON Resistance
VT
fs
fs
OS
DS(ON)
-1.2 mV/°C -1.3 mV/°C
25 40 mA VGS = V
5 10 mmho VDS = 5V IDS= 10mA 2 4 mmho VDS = -5V IDS= -10mA
0.5 % 0.5 %
200 µmho VDS = 5V I
50 75 Ω VDS = 0.1V V
Drain Source ON Resistance Mismatch
∆R
DS(ON)
0.5 % VDS = 0.1V V
Drain Source Breakdown BV Voltage
Off Drain I Current 4 µAT
Gate Leakage I Current 10 nA T
Input C Capacitance
DS(OFF)
GSS
ISS
12 V IDS = 10µA V
DSS
0.1 4 nA VDS =12V I
150pA VDS = 0V V
610pF 610pF
= 125°C4µAT
A
= 125°C10nAT
A
DS
= 5V -8 -16 mA VGS = V
DS
= 10mA 500 µmho VDS = -5V I
DS
= 5V 180 270 Ω VDS = -0.1V V
GS
= 5V 0.5 % VDS = -0.1V V
GS
=0V -12 V IDS = -10µA V
GS
= 0V 0.1 4 nA VDS = -12V V
GS
=12V 1 50 pA VDS = 0V V
GS
10 mV IDS = -100µA VGS = V
DS
= -5V
DS
= -10mA
DS
= -5V
GS
= -5V
GS
=0V
GS
= 0V
GS
GS
=-12V
= 125°C
A
= 125°C
A
ALD1103 Advanced Linear Devices 2
Page 3
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
-80
VBS = 0V
= 25°C
T
-60
(mA)
-40
-20
DRAIN - SOURCE CURRENT
A
0
0-8-2 -6-4 -10 -12
DRAIN - SOURCE VOLTAGE (V)
FORWARD TRANSCONDUCTANCE
vs. DRAIN - SOURCE VOLTAGE
10000
5000
2000
1000
(µmho)
FORWARD TRANSCONDUCTANCE
VBS = 0V f = 1KHz
TA = +25°C
500
200
100
0-8-2 -6-4 -10
IDS = -1mA
DRAIN - SOURCE VOLTAGE (V)
I
DS
VGS = -12V
= -5mA
TA = +125°C
-10V
-8V
-6V
-4V
-2V
-12
LOW VOLTAGE OUTPUT
4
VBS = 0V
= 25°C
T
A
2
(mA)
DRAIN-SOURCE CURRENT
0
-2
-4
-320
-160 0
DRAIN -SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
-20
VBS = 0V
-15
-10
(µA)
-5
DRAIN-SOURCE CURRENT
0
0 -0.8 -1.6 -2.4 -3.2 -4.0
GATE - SOURCE VOLTAGE (V)
CHARACTERISTICS
VGS = -12V
2V
10V 12V
160
4V 6V 8V
VGS = V TA = 25°C
-6V
-4V
-2V
320
DS
R
DS (ON)
10000
VDS = 0.4V V
1000
(Ω)
100
DRAIN - SOURCE ON RESISTANCE
10
vs. GATE - SOURCE VOLTAGE
= 0V
BS
TA = +125°C
TA = +25°C
-20 -4 -6 -8 -10 -12 GATE - SOURCE VOLTAGE (V)
OFF DRAIN - CURRENT vs.
TEMPERATURE
-10
X
10-6
V
= -12V
DS
= VBS = 0V
V
GS
-10
X
10-9
(A)
-10
X
10
-12
-50 -25
TEMPERATURE (°C)
OFF - DRAIN SOURCE CURRENT
+25 +50 +75 +125+1000
ALD1103 Advanced Linear Devices 3
Page 4
N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
160
V
= 0V
BS
T
= 25°C
A
120
(mA)
80
40
DRAIN -SOURCE CURRENT
0
024 681012
DRAIN-SOURCE VOLTAGE (V)
FORWARD TRANSCONDUCTANCE
vs. DRAIN-SOURCE VOLTAGE
5
1 x10
V
4
5 x10
4
2 x10
4
1 x10
(µmho)
3
5 x10
3
2 x10
1 x10
3
FORWARD TRANSCONDUCTANCE
= 0V
BS
f = 1KHz
T
= +125°C
A
024681012
DRAIN -SOURCE VOLTAGE (V)
TA = +25°C
IDS = 1mA
VGS = 12V
10V
8V
6V
4V 2V
IDS = 10mA
LOW VOLTAGE OUTPUT
8
4
0
(mA)
-4
DRAIN-SOURCE CURRENT
-8
VBS = 0V T
= 25°C
A
-160 -80 0 80 160 DRAIN -SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
20
15
V
= 0V -2V
BS
10
(µA)
5
DRAIN-SOURCE CURRENT
0
0 0.8 1.6 2.4 3.2 4.0
GATE - SOURCE VOLTAGE (V)
CHARACTERISTICS
VGS = 12V
-4V
-6V
-8V
-10V
VGS = V TA = 25°C
-12V
6V 4V
2V
DS
R
DS (ON)
vs. GATE - SOURCE VOLTAGE
OFF DRAIN - CURRENT vs.
TEMPERATURE
10000
VDS = 0.2V V
= 0V
BS
1000
(Ω)
100
TA = +25°C
DRAIN - SOURCE ON RESISTANCE
10
20 4 6 8 10 12
GATE SOURCE VOLTAGE (V)
TA = +125°C
10
X
10-6
V
= +12V
DS
= VBS = 0V
V
GS
10
X
10-9
(A)
OFF - DRAIN SOURCE CURRENT
-12
X
10
10
-50 -25 TEMPERATURE (°C)
+25 +50 +75 +125+1000
ALD1103 Advanced Linear Devices 4
Page 5
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
I
SET
R
SET
Q
1
ALD1103
Q1, Q2: N - Channel MOSFET Q
, Q4: P - Channel MOSFET
3
DIFFERENTIAL AMPLIFIER
V+ = +5V
1/2 ALD1103
I
SET
Q
3
= I
V+ -Vt
~
= 4
SET
R
R
Q
4
SET
SET
Digital Logic Control of Current Source
ON
OFF
Q
3
I
SOURCE
Q
2
I
SOURCE
=
R
SET
Q
1
V+ = +5V
1/4 ALD1103
: N - Channel MOSFET
Q
1
Q
: P - Channel MOSFET
3,Q4
Q
4
I
SOURCE
CURRENT SOURCE MULTIPLICATION
+
V
V+ = +5V
PMOS PAIR
Q
3
Q
+
V
IN
1
NMOS PAIR
ALD1103
Q
2
Current
Q
4
V
OUT
-
V
IN
I
SET
R
SET
Q
Q
SET
Q
1
Q
2
3
I
SOURCE
Q
N
= I
SET
Source
Q1, Q2: N - Channel MOSFET Q
, Q4: P - Channel MOSFET
3
Q
..QN: ALD 1101 or ALD 1103
SET, Q1
N - Channel MOSFET
ALD1103 Advanced Linear Devices 5
x N
Page 6
TYPICAL APPLICATIONS
BASIC CURRENT SOURCES
P- CHANNEL CURRENT SOURCEN- CHANNEL CURRENT SOURCE
I
SOURCE
I
SOURCE
5
8
Q
2
6
7
= I
SET
Q
: N - Channel MOSFET
1, Q2
V+ - Vt
=
R
SET
I
SET
2
V+ = +5V
R
SET
3
Q
1
1
1/2 ALD1103
V+ - 1.0
~
=
R
SET
V+ = +5V
I
SET
4
~
=
R
SET
Q3, Q4: P - Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
1/2 ALD1103
8
Q
3
2
3
R
SET
6
7 Q
4
5
I
SOURCE
V+ = +5V
I
I
SOURCE
Q
4
Q
2
Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103)
SET
R
SET
Q
Q
3
~
=
R
SET
Q
2
Q
4
I
SOURCE
Q
1
3
Q
3
1
= I
R
SET
SET
V+ - 2Vt
=
R
SET
I
SET
I
SOURCE
Q1, Q2, Q3, Q4: P - Channel MOSFET  (ALD1102 or ALD1103)
ALD1103 Advanced Linear Devices 6
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