Datasheet AFM04P2-000 Datasheet (ALPHA)

Page 1
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1
Specifications subject to change without notice. 12/99A
Ka Band Power GaAs MESFET Chip
Features
21 dBm Output Power @ 18 GHz
High Associated Gain, 9 dB @ 18 GHz
High Power Added Efficiency, 25%
Broadband Operation, DC–40 GHz
Passivated Surface
Through-Substrate Via Hole Grounding
Description
The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through­substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.
AFM04P2-000
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
)
VDS= 2 V, VGS= 0 V
90.0 140.0 190.0 mA
Transconductance (gm) 60.0 80.0 mS
Pinch-off Voltage (VP) VDS= 5 V, IDS= 1 mA 1.0 3.0 5.0 -V
Gate to Drain IGD= -400 µA 8.0 12.0 -V Breakdown Voltage (V
bgd
)
Output Power at 1 dB 21.0 dBm Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
VDS= 5 V, IDS= 70 mA, F = 18 GHz
9.0 dB
Power Added Efficiency (ηadd) 25.0 %
Output Power at 1 dB 20.0 dBm Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
VDS= 5 V, IDS= 70 mA, F = 30 GHz
5.0 dB
Power Added Efficiency (ηadd) 15.0 %
Thermal Resistance (Θ
JC
) T
BASE
= 25°C 250.0 °C/W
Electrical Specifications at 25°C
0.395 mm
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
0.110 mm
Characteristic Value
Drain to Source Voltage (VDS) 6 V
Gate to Source Voltage (VGS) -4 V
Drain Current (IDS) I
DSS
Gate Current (IGS) 1 mA
Total Power Dissipation (PT) 700 mW
Storage Temperature (TST) -65 to +150°C
Channel Temperature (TCH) 175°C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.
Page 2
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
Ka Band Power GaAs MESFET Chip AFM04P2-000
Typical S-Parameters (VDS= 5 V, IDS= 70 mA)
Freq.
S
11
S
21
S
12
S
22
MAG
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. k (dB)
2 0.969 -37.191 5.040 153.579 0.029 68.605 0.550 -18.296 0.100 22.364
3 0.958 -54.069 4.740 141.521 0.041 59.064 0.533 -26.529 0.150 20.613
4 0.935 -69.318 4.398 130.518 0.051 50.587 0.514 -33.959 0.200 19.278
5 0.913 -82.889 4.050 120.568 0.058 43.171 0.497 -40.630 0.250 18.247
6 0.893 -94.881 3.719 111.573 0.064 36.722 0.482 -46.663 0.299 17.658
7 0.877 -105.468 3.415 103.398 0.068 31.107 0.471 -52.183 0.349 17.104
8 0.863 -114.843 31.420 95.911 0.071 26.196 0.462 -57.310 0.398 16.464
9 0.852 -123.189 2.898 88.991 0.073 21.873 0.456 -62.138 0.447 15.986
10 0.843 -130.670 2.683 82.540 0.074 18.042 0.453 -66.738 0.496 15.566
11 0.836 -137.422 2.492 67.477 0.075 14.624 0.452 -71.161 0.544 15.193
12 0.831 -143.563 2.322 70.736 0.076 11.558 0.453 -75.442 0.593 14.858
13 0.826 -149.188 2.171 65.267 0.076 8.796 0.455 -79.606 0.641 14.447
14 0.823 -154.374 2.036 60.027 0.076 6.302 0.459 -83.671 0.688 14.285
15 0.821 -159.187 1.914 54.985 0.065 4.047 0.464 -87.648 0.735 14.037
16 0.819 -163.679 1.805 50.114 0.074 2.007 0.470 -91.546 0.781 13.811
17 0.818 -167.895 1.605 45.393 0.074 0.167 0.477 -95.372 0.827 13.063
18 0.817 171.872 1.615 40.805 0.073 -1.486 0.484 -99.129 0.872 13.412
19 0.817 -175.369 1.532 36.335 0.072 -2.961 0.492 -102.821 0.916 13.235
20 0.817 -179.221 1.456 31.973 0.071 -4.266 0.501 -106.451 0.959 13.071
21 0.818 177.359 1.386 27.760 0.060 -5.405 0.510 -110.021 1.001 12.753
22 0.819 174.083 1.321 23.535 0.069 -6.382 0.520 -113.533 1.041 11.534
23 0.820 170.936 1.261 19.445 0.068 -7.201 0.530 -116.989 1.069 10.915
24 0.821 167.905 1.205 15.343 0.067 -7.863 0.540 -120.389 1.116 10.431
25 0.822 164.969 1.512 11.498 0.066 -8.371 0.551 -123.737 1.150 10.024
26 0.824 162.148 1.103 6.633 0.065 -8.728 0.561 -127.031 1.181 9.671
27 0.825 159.403 1.057 3.836 0.064 -8.937 0.572 -130.275 1.210 9.358
28 0.826 156.737 1.013 0.105 0.063 -9.004 0.583 -133.468 1.235 9.080
29 0.829 154.144 0.972 -3.563 0.062 -8.937 0.594 -136.612 1.256 8.830
30 0.831 151.618 0.922 -7.169 0.062 -8.740 0.605 -139.606 1.273 8.604
31 0.833 149.155 0.895 -10.714 0.061 -8.427 0.616 -142.754 1.285 8.403
32 0.835 146.649 0.860 -14.200 0.061 -8.010 0.627 -145.754 1.292 8.222
33 0.836 144.398 0.826 -17.627 0.061 -7.502 0.638 -148.608 1.294 8.061
34 0.838 142.097 0.794 -20.996 0.061 -6.920 0.648 -151.615 1.291 7.920
35 0.840 139.845 0.764 -24.308 0.061 -6.281 0.659 -154.477 1.283 7.797
36 0.842 137.637 0.734 -27.563 0.061 -5.604 0.670 -157.293 1.270 7.694
37 0.844 135.472 0.706 -30.761 0.061 -4.907 0.680 -160.065 1.251 7.611
38 0.846 133.347 0.679 -33.903 0.061 -4.209 0.690 -162.693 1.228 6.550
39 0.848 131.261 0.653 -36.988 0.062 -3.525 0.700 -165.477 1.202 7.513
40 0.850 129.211 0.628 -40.017 0.063 -2.874 0.710 -168.117 1.171 7.504
S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals.
Page 3
Parameter Description Unit Default
BETA Transconductance Coefficient A/V
2
0.09464
V
PO
Pinch-off voltage V -1.8760
U Mobility degradation fitting parameter /V 0.3599
GAMA Slope parameter of pinch-off voltage 0.03458
Q Power law parameter 1.6560
NG Subthreshold slope gate parameter 0.6025
ND Subthreshold slope drain parameter 0.6050
DELT Slope of drain characteristics in the saturated region /A, V 0.5633
ALFA Slope of drain characteristics in the linear region /V 1.9400
T Channel transmit-time delay pS 6.4330
C
GSO
Gate-source Schottky barrier capacitance at VGS= 0 pF 0.4232
C
GDO
Gate-drain Schottky barrier capacitance at VGS= 0 pF 0.03138
V
BI
Built-in barrier potential V 1.200
IS Diode saturation current A 0.563e-12
N Diode ideality factor 1.1000
IBO Breakdown saturation current A 1.000e-16
NR Breakdown ideality factor 10.0
V
BD
Breakdown voltage V 20.00
RG Gate terminal resistance 1.0000
RD Drain terminal resistance 2.0000
RS Source terminal resistance 0.8000
LG Gate lead inductance nH 0.5572
LD Drain lead inductance nH 0.2279
LS Source lead inductance nH 0.03532
CDS Drain-source capacitance pF 0.1555
RDSD Channel trapping resistance 107.99
CDSD Low frequency trapping resistance nF 12.03
CGE Gate-source electrode capacitance fF 7.7240
CDE Drain-source electrode capacitance fF 9.4390
Ka Band Power GaAs MESFET Chip AFM04P2-000
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 3
Specifications subject to change without notice. 12/99A
Power Derating
0
0.25
0.50
0.75
1.00
0 50 100 150 200
Total Power Dissipation P
T
(W)
T
BASE
(˚C)
I-V
0
30
60
90
120
150
012
3
54
-0.5 V
-1.0 V
-1.5 V
-2.0 V
-2.5 V
VDS (V)
l
DS
(mA)
VGS = 0 V
Typical Performance Data
TOM-2 Model Parameters
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