Page 1
AF4502C
P & N-Channel 30-V (D-S) MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rig hts to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8
Features
-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
Product Summary
VDS (V) r
DS(on)
(mΩ) ID (A)
20@VGS=4.5V
8.4
30
13.5@V
GS
=10V
10.0
30@VGS=-4.5V
-6.8
-30
19@VGS=-10V
-8.5
Pin Assignments
SOP-8
5
6
7
8
4
3
2
1
D1
D1
D2
D2
S1
G1
S2
G2
General Description
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Pin Descriptions
Pin Name Description
S1 Source (NMOS)
G1 Gate (NMOS)
D1 Drain (NMOS)
S2 Source (PMOS)
G2 Gate (PMOS)
D2 Drain (PMOS)
Ordering information
AX 4502C X X X
PN
Package
Feature
F :MOSFET S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
Page 2
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
2/8
Absolute Maximum Ratings (T
A
=25ºC unless otherwise noted)
Symbol Parameter N-Channel P-Channel Units
VDS Drain-Source Voltage 30 -30
VGS Gate-Source Voltage 20 -25
V
TA=25ºC 10 -8.5
ID Continuous Drain Current
(Note 1)
T
A
=70ºC 8.1 -6.8
A
IDM Pulsed Drain Current
(Note 2)
±50 ±50 A
IS Continuous Source Current (Diode Conduction)
(Note 1)
2.3 -2.1 A
TA=25ºC 2.1 2.1
PD Power Dissipation (Note 1)
T
A
=70ºC 1.3 1.3
W
TJ, T
STG
Operating Junction and Storage Temperature Range - -55 to 150 ºC
Thermal Resistance Ratings
Symbol Parameter Maximum Units
R
θJC
Maximum Junction-to-Case
(Note 1)
t < 5 sec 40 ºC/W
R
θJA
Maximum Junction-to-Ambient
(Note 1)
t
<
5 sec 60 ºC/W
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T
A
=25ºC unless otherwise noted)
Limits
Symbol Parameter Test Conditions
Ch Min. Typ. Max.
Unit
Static
VGS=0V, ID=250uA N 30 - -
V
(BR)DSS
Drain-Source breakdown Voltage
V
GS
=0V, ID=-250uA P -30 - -
V
VDS= VGS, ID=250uA N 1 1.95 3
V
GS(th)
Gate-Threshold Voltage
V
DS
= VGS, ID=-250uA P -1.0 -1.6 -3
V
VGS=20V, VDS=0V N - - ±100
I
GSS
Gate-Body Leakage
VGS=-20V, VDS=0V P - - ±100
nA
VDS=24V, VGS=0V N - - 1
I
DSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V P - - -1
uA
VDS=5V, VGS=10V N 20 - -
I
D(on)
On-State Drain Current (Note 3)
VDS=-5V, VGS=-10V P -50 - -
A
VGS=10V, ID=10A - 11 13.5
VGS=4.5V, ID=8.4A
N
- 15 20
VGS=-10V, ID=-8.5A - 16 19
r
DS(on)
Drain-Source On-Resistance
(Note 3)
V
GS
=-4.5V, ID=-6.8A
P
- 26 30
mΩ
VDS=15V, ID=10A N - 40 -
gfs
Forward Tranconductance
(Note 3)
VDS=-15V, ID=-9.5A P - 31 -
S
Page 3
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
3/8
Specifications (T
A
=25ºC unless otherwise noted)
Limits
Symbol Parameter Test Conditions
Ch Min. Typ. Max.
Unit
Dynamic
N - 12 19
Qg Total Gate Charge
P - 13 26
N - 3.3 -
Qgs Gate-Source Charge
P - 5.8 N - 4.5 -
Qgd Gate-Drain Charge
N-Channel
VDS=15V, VGS=4.5V
ID=10A
P-Channel
VDS=-15V, VGS=-4.5V
ID=-10A
P - 12 -
nC
Switching
N - 20 30
t
d(on)
Turn-On Delay Time
P - 15 26
N - 9 20
tr Rise Time
P - 16 21
N - 70 102
t
d(off)
Turn-Off Delay Time
P - 62 108
N - 20 81
tf Fall-Time
N-Channel
V
DD
=15, VGS=10V
I
D
=1A, R
GEN
=25Ω
P-Channel
VDD=-15, VGS=-10V
ID=-1A, R
GEN
=15Ω
P 46 71
nS
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Page 4
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
4/8
Typical Performance Characteristics
Page 5
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
5/8
Typical Performance Characteristics (Continued)
Page 6
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
6/8
Typical Performance Characteristics (Continued)
Page 7
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
7/8
Typical Performance Characteristics (Continued)
Page 8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
8/8
Marking Information
SOP-8L
( Top View )
1
8
4 5 0 2 C
AA Y
W X
Year code:
Part Number
Lot code:
Week code:
Factory code
"A~Z": 01~26;
"A
~Z": 27~52
"4" =2004
~
"A~Z": 01~26;
"A
~Z": 27~52
"X": Non-Lead Free;
"X": Lead Free
Logo
Package Information
Package Type: SOP-8L
VIEW "A"
L
C
VIEW "A"
H
E
A
A2
A1
B
e
D
7
(4X)
0.015x45
7
(4X)
y
Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Nom. Max. Min. Nom. Max.
A 1.40 1.60 1.75 0.055 0.063 0.069
A1 0.10 - 0.25 0.040 - 0.100
A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075 0.008 0.010
D 4.80 5.05 5.30 0.189 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161
e - 1.27 - - 0.050 -
H 5.79 5.99 6.20 0.228 0.236 0.244
L 0.38 0.71 1.27 0.015 0.028 0.050
y - - 0.10 - - 0.004
θ
0
O
- 8O 0
O
- 8O
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